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標題: | 絕緣層上鍺材料之成長與分析 Growth and Characterization of Germanium Material on Insulator |
作者: | John Han Yu 余宗翰 |
指導教授: | 郭宇軒(Kuo, Yu-Hsuan) |
關鍵字: | 鍺,絕緣層上覆鍺之材料,磊晶,液相磊晶法,穿透式電子顯微鏡,原子力顯微鏡, Germanium,Germanium-on-Insulator,Epitaxy,Liquid-Phase-Epitaxy,TEM,AFM, |
出版年 : | 2008 |
學位: | 碩士 |
摘要: | 摘要
為克服因矽基電子元件尺寸持續微縮所生之非理想效應,利用絕緣層上覆矽做為元件製作基材為一理想解決方案。鍺與矽皆為四族之材料,又鍺之電子、電洞遷移率以及光電效率都較矽良好。為了綜合絕緣層上覆矽之結構與鍺材料之優點,絕緣層上覆鍺之結構為最佳選擇之一。 傳統絕緣層上覆鍺之材料製作方法,如晶圓鍵結黏合法、Smart Cut、氧佈植隔絕法、鍺濃縮法等,皆需長時間之製作流程或昂貴之製程設備以製作絕緣層上覆鍺之材料。而以液相磊晶法所製作絕緣層上覆鍺之材料,在結構中使用氮化矽及作為覆蓋層之二氧化矽當作屏蔽,且利用缺陷夾止之機制阻擋差排之成長,並以快速熱退火之方式獲得良好品質之單晶鍺薄膜。但其缺點為無法製作大面積之絕緣層上覆鍺之材料,且鍺薄膜之晶相會因過高之退火溫度而扭曲。 本論文利用液相磊晶法製做絕緣層上覆鍺之材料,且設計特殊之鍺薄膜結構,如單端退火結構、雙端退火結構、多層寬度退火結構、缺陷截止結構、可觀察單晶鍺成長形貌之結構、多邊對稱退火之結構、以及波導形狀退火之結構,並以穿透式電子顯微鏡與原子力顯微鏡觀察試片所得到之材料性質與表面平坦度做深入之探討。 Abstract In order to overcome the nonideal effects in electronics devices caused by the device scaling down, silicon-on-insulator (SOI) material is an ideal substrate for devices fabrication. Silicon (Si) and germanium (Ge) are both group-IV material, and Ge possesses higher electron and hole mobilities as well as better optical properties as compared to Si. To combine the advantages of SOI and Ge materials, the germanium -on-insulator (GOI) approach is one of the best solutions for substrate engineering. Traditional fabrication methods for GOI material, such as wafer bonding, Smart Cut, SIMOX, and Ge condensation, require either long process time or high cost. The liquid phase epitaxy (LPE) technique can solve these issues by utilizing the defect necking mechanism to obtain high-quality GOI. Patterned insulators are used to block the threading dislocation propagation originating from the re-crystallized Ge during the rapid thermal anneal (RTA) process. However, large-area GOI is difficult to be obtained by the LPE process, and the Ge crystal orientation might be twisted during the high temperature annealing process. The LPE method for Ge material fabrication on insulators is investigated in this thesis. Special Ge pattern structures, including the rib structure, growth from two-end seeding window, multi-width structure, defect-block structure, Ge growth-range- survey structure, coplanar symmetric structure and waveguide structure, are designed. The material characterization by the transmission electron microscopy (TEM) and surface morphology analysis by the atomic force microscopy (AFM) will also be discussed. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26782 |
全文授權: | 未授權 |
顯示於系所單位: | 電子工程學研究所 |
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