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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張顏暉(Yuan-Huei Chang) | |
dc.contributor.author | Chien-Liang Chen | en |
dc.contributor.author | 陳建良 | zh_TW |
dc.date.accessioned | 2021-06-08T07:22:26Z | - |
dc.date.copyright | 2008-07-30 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-07-22 | |
dc.identifier.citation | [1]莊嘉琛, 太陽能工程-太陽電池篇, 全華出版社
[2] D.L. King and M.E. Buck, Proc. of the 22nd IEEE PVSPC, 303 (1991) [3]L. Escoubas, J .J. Simon, M. Loli, G. Berginc, F. Flory, and H. Giovannini, Optics Communications, 226, 81 (2003) [4]J. M. Kim, and Y. K. Kim, Solar Energy Materials & Solar Cells, 81, 239 (2004) [5] J. M. Lee, and S. J. Park, Proc. SPIE 5931, 593119 (2005) [6] Y. F. Huang, S. Chattopadhyay Y. J. Jen, C. Y. Peng, T. A. Liu, Y. K. Hsu, C. L. Pan, H. C. Lo, C. H. Hsu, Y. H. Chang, C. S. Lee, K. H. Chen, and L. C. Chen, Nature Nanotech. 2, 770 (2007). [7] C. H. Hsu, H. C. Lo, C. F. Chen, C. T. Wu, J. S. Hwang, D. Das, J. Tsai, L. C. Chen, and K. H. Chen, Nano Lett. 4, 471 (2004) [8]J. Zhao, A. Wang, M. A. Green, IEEE, 333, (1990) [9]蔡進譯, 物理雙月刊, P701~P719, 27, 10月(2005) [10]施敏, 半導體元件物理與製作技術, 國立交通大學, 第二版, pp.384. [11] Y. Kanamori, K. Kobayash, H. Yugami, and K. Hane, Jpn. J. Appl. Phys. 42, 4020 (2003) [12] Y. Ono, Y. Kimura, Y. Ohta, and N. Nishida, Appl. Opt. 26, 1142 (1987) [13] M. E. Motamedi, W. H. Southwell, and W. J. Gunning, Appl. Opt. 31, 4371 (1992) [14] D. H. Raguin, and G. M. Morris, Appl. Opt. 32, 1154 (1993) [15] H. Sai, H. Fujii, K. Arafune, Y. Ohshita, Y. Kanamori, H. Yugami, and M. Yamaguchi, Jpn. J. Appl. Phys. 46, 3333 (2007) [16] D. S. Ruby, S. H. Zaidi, and S. Narayanan, Twenty-Eighth IEEE PVSC, pp.75–78. (2000) [17] D. S. Ruby, S. H. Zaidi, S. Narayanan, B. M. Damiani and, A. Rohatgi, PVSEC-12, Jeju, Korea, pp.273–274. (2001) [18] A. Elamrani, R. Tadjine, and F. Y.Moussa, International Journal of Plasma Science and Engineering, 2008, 1(2008) [19] S. Wang, X. Z. Yu, and H. T. Fan, Appl. Phys. Lett. 91, 061105 (2007) [20] K. Kim, S. K. Dhungel, and J. Yi, J. Korean Phys. Soc. 47, 1035 (2005). [21] S. Peters, C. Ballif1, D. Borchert, R. Schindler, W. Warta, and G. Willeke, Semicond. Sci. Technol. 17, 677 (2002) [22] I. Hamammu, and K. Ibrahim, Proc of 2002 IEEE Int.Conf. on Semcon. Elec, Pinang, Malaysia | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26720 | - |
dc.description.abstract | 本篇論文主要研究單晶矽太陽能電池表面上奈米結構的抗反射層的製程及其對其太陽能電池轉換效率的影響。
本論文中我們使用三種不同的蝕刻方式來製作奈米結構。第一種方法是目前業界常用的濕蝕刻方式,利用KOH溶液在表面上形成許多微小的金字塔結構。第二種方法是在矽晶圓上濺鍍一層薄薄的銀層,經過高溫爐退火後,形成一顆顆銀顆粒,這些銀顆粒可當作蝕刻遮罩,最後對附有銀顆粒的矽晶圓進行反應式離子蝕刻,便可在晶圓表面形成奈米柱。第三種方法是利用電子迴旋共振電漿反應器來製作奈米尖錐結構,首先在矽晶圓上形成SiC作為蝕刻遮罩,緊接著以Ar及H2對附有SiC的矽基板進行乾蝕刻,如此便可得到奈米尖錐。 樣品完成後,我們以傅利業紅外線光譜分析儀量測奈米結構在可見光與近紅外光波段的反射率,我們發現奈米柱及奈米尖錐結構具有較為寬廣的低反射率波段。最後我們利用高溫擴散法在長有奈米結構上的p-type矽基板上形成PN接面,製成太陽能電池,我們發現奈米柱結構具有最佳的轉換效率,效率可較前業界常用的濕蝕刻方式提升82%,而奈米尖錐結構具有極佳的抗反射效果,但由於結構容易受到破壞且表面缺陷多,造成轉換效率反而變低。 | zh_TW |
dc.description.abstract | In this thesis, different methods of fabricating nanostructures on the surface of single crystal silicon for antireflection were investigated and the influences of these nanostructures on the conversion efficiency of the solar cell were studied.
Three methods were used to make nanostructures. The first method was wet etching method which has been wildly used in the solar cell industry. KOH solution was used to wet etch Si surface and many small pyramidal structures were formed after the wet etching. The second method was using reactive ion etching with Ag nanoclusters as etch mask. In this method, a thin Ag film was deposited on the silicon surface first, then the sample was thermally annealed to let Ag film dewet into Ag clusters and serves us etch mask. After reactive ion etching, Si-nanopillars were formed on the Si surface. The third method was using the electron cyclotron resonance (ECR) to make the nanotips structure. The SiC clusters which were formed on the Si substrate in the beginning of ECR process could be used for etch-mask. After the unmasked region is etched by Ar and H2, Si-nanotips were formed on the surface. Fourier transform spectrometer was used to measure the reflection of the surface with nanostructures in the VIS and NIR regions. The samples with nanopillar and nanotip structures were both found to have lower reflection in these spectral regions than the sample made by using wet etching. Solar cells were then made by using thermal diffusion of n-type dopants into the samples, and we found that the solar cells with the nanopillar structures had the best conversion efficiency. The efficiency is enhanced by 82% over the solar cell made with conventional method. On the other hand, although the sample with nanotip structure has excellent antireflection property, after making into solar cell it has very poor efficiency. This is because the nanotip structures were destroyed in the high temperature process in making the solar cell. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T07:22:26Z (GMT). No. of bitstreams: 1 ntu-97-R91222007-1.pdf: 12130315 bytes, checksum: 514e397ae1d4c0fb60bd7b3d2838e995 (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 口試委員會審定書 Ⅰ
誌謝 Ⅱ 中文摘要 Ⅲ 英文摘要 Ⅳ 圖索引 Ⅷ 表索引 XI 第1章. 緒論 1.1. 前言 1 1.2. 研究動機 2 第2章. 基本理論 2.1. 太陽能電池的發展 4 2.2. 太陽能電池的基本原理 6 2.3. 太陽能電池的等效電路 11 2.4. 轉換效率的計算與量測 14 2.5. 串、並聯電阻的測定與影響 16 2.6. 量測光源 22 2.7. 表面結構的抗反射原理 24 第3章. 實驗儀器簡介 3.1. 蒸鍍機 26 3.2. 濺鍍機 28 3.3. 高溫爐擴散系統 30 3.4. 濕蝕刻系統 31 3.5. 反應式離子蝕刻機 32 3.6. 掃瞄式電子顯微鏡 34 3.7. 傅立葉轉換紅外光譜儀 39 3.8. 電流-電壓曲線量測儀器 41 第4章. 實驗進行 4.1. 基板的清潔處理 43 4.2. 表面結構的製作 44 4.3. 高溫爐擴散製作PN接面 50 4.4. 邊緣隔離 54 4.5. 快速熱氧化 55 4.6. 電極的製作 57 4.7. 太陽能電池元件的製作 61 4.8. 轉換效率的測量 62 第5章. 結果與討論 5.1. 表面結構的SEM圖 63 5.2. 表面結構的反射率 72 5.3. 轉換效率的測量 76 5.4. 效率不佳的可能原因 88 第6章. 結論 90 | |
dc.language.iso | zh-TW | |
dc.title | 奈米結構單晶矽太陽能電池之製程及研究 | zh_TW |
dc.title | Fabrication and Investigation of Nanostructured Single Crystal Silicon Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳永芳,梁啟德,孫允武,羅奕凱 | |
dc.subject.keyword | 太陽能電池,抗反射,反應式蝕刻, | zh_TW |
dc.subject.keyword | solar cell,antireflection,RIE, | en |
dc.relation.page | 92 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2008-07-24 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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