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標題: | 聰明切與電漿浸沒離子佈植之應用 Applications of Smart-Cut and Plasma Immersion Ion Implantation |
作者: | Yu Deng 鄧鈺 |
指導教授: | 劉致為 |
關鍵字: | 玻璃上覆,光偵測器,電漿浸沒離子佈植, SOG,photodetector,PIII, |
出版年 : | 2008 |
學位: | 碩士 |
摘要: | 聰明切製程是結合直接晶圓鍵結和氫引起轉換層兩項技術而成。此方法是一種能建構高品質絕緣層上矽的先進技術,並且已成功應用在許多元件上。
在本論文中,因為玻璃基板可以達到降低成本的目標且可使用於背面入射的應用上,所以玻璃基板是一個很好的代替品來取代覆蓋二氧化矽的矽晶圓。我們成功的將矽薄膜轉移至玻璃上,製造出玻璃上覆矽結構。 矽層因為具有吸收紫外光及可見光的能力,在本論文中有探討玻璃上矽-金氧半-光偵測器的特性。由1.4 mm厚的矽層所做成的光偵器在照532、635和850的光時有產生響應。為了減少矽層的表面粗糙度,第二階段的氣氛退火(10%氫氣與90%的氮氣)為可行的方法之一。 最後我們應用電漿浸沒離子佈植技術來做氫離子佈值,雖然我們的電漿浸沒離子佈植系統無法在矽裡佈值足夠的氫離子濃度,使得無法應用在聰明切製程上。電漿浸沒離子佈植仍可應用在佈值氫離子來鈍化斷鍵和缺陷。可以提升矽的光激發光的強度和矽金氧半光偵測器的響應。 Smart-cut is a recently established advanced technology for fabricating high-quality silicon-on-insulator (SOI) systems and has been applied to many applications. Smart-cut process consists of direct wafer bonding and hydrogen-induced layer transfer technology. In this thesis, the thin film silicon layer is transferred successfully to the glass by smart-cut process and formed the Silicon-on-Glass (SOG) structure. Because the glass substrate can reach the goal of low cost and can be used for back incident application, the glass substrate is a good substitute for silicon wafer capped with SiO2. Since silicon absorbs light in the UV and visible light region, the SOG MOS photodetectors are studied in the thesis. 1.4-mm-thick Si detectors have responsivity at 532 nm, 635 nm and 850 nm exposure. To reduce the surface roughness of silicon layer, the second annealing in forming gas (i.e. H2 10%) is one of the workable methods. Finally, we applied the plasma immersion ion implantation (PIII) technique for hydrogen implantation. Although the concentration of the implanted hydrogen in silicon by our PIII system is not enough for smart-cut process, PIII can be used for hydrogen passivation by implant hydrogen to passivate dangling bonds or defects in silicon. The PL intensity and responsivity of Si MOS detector are enhanced after the hydrogen implantation by PIII. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26703 |
全文授權: | 未授權 |
顯示於系所單位: | 電子工程學研究所 |
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