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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 管傑雄 | |
| dc.contributor.author | Yu-Ying Wu | en |
| dc.contributor.author | 吳俞潁 | zh_TW |
| dc.date.accessioned | 2021-06-08T07:12:05Z | - |
| dc.date.copyright | 2011-08-16 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-08-11 | |
| dc.identifier.citation | [1] Min Seung LEE, “Characteristics of Nano-Floating-Gate Memory with Au
Nanoparticles in SiO2 Dielectrics,” Japanese Journal of Applied Physics Vol. 46, No. 9B, 2007, pp. 6202–6204. [2] Zengtao Liu, “Metal Nanocrystal Memories—Part I: Device Design and Fabrication,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, p.1606 - 1613, NO. 9, SEPTEMBER, 2002. [3] Chien-Chung Chen, “Using Carbon-Fluorine polymer as wet etching mask to fabricate Si sawtooth grating and measuring with FTIR and Raman Spectrum , ” National Taiwan University Master thesis(2010). [4] QinWang1, Rui Jia1, “Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory, ” J. Phys. D: Appl. Phys, vol.41, (2008) 035109 (5pp). [5] Yun-Shan Lo, “Field enhancement effect of nanocrystals in bandgap engineering of tunnel oxide for nonvolatile memory application, ” APPLIED PHYSICS LETTERS, vol. 94, 082901 ,2009. [6] Kuan-Yuan Shen, “Metal-Oxide-Semiconductor Structure with Au Nanocrystals for Charge Storage,” National Taiwan University Master thesis (2006). [7] Weihua Guan, “Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide, ” J. Phys. D: Appl. Phys, vol.40, (2007) 2754–2758. [8] V. Mikhelashvili, “A nonvolatile memory capacitor based on Au nanocrystals with HfO2 tunneling and blocking layers,” APPLIED PHYSICS LETTERS, vol. 95 , 2009. [9] A. Chandraa, “Gold nanoparticles via alloy decomposition and their application to nonvolatile memory,” APPLIED PHYSICS LETTERS, vol. 87, p. 253113 - 253113-3, 2005. [10] Chen-ChanWang, “Memory characteristics of Au nanocrystals embedded in metal–oxide–semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide,” J. Phys. D: Appl. Phys ,vol. 40, (2007) 1673–1677. [11] Lin, Jhao-Hong, “Agglomerate Germanium quantum dot from different evaporated Germanium thin film thickness by laser annealing, ” National Taiwan University Master thesis(2010). [12] HUANG HONG-CHANG, “Study of Oxide Traps among Gold Nano-Particles in Metal-Oxide-Semiconductor Device, ” National Taiwan University Master thesis (2010). [13] Sungho Heo, “The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices,” I APPLIED PHYSICS LETTERS,vol. 93, 172115 ,2008. [14] Sang-Myeon Han , “High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealing , ” Journal of Non-Crystalline Solids , vol.352, (2006) , p.1434–1437. [15] Kiyohito YAMADA1, “Floating Gate Metal–Oxide–Semiconductor Capacitor Employing Array of High-Density Nanodots Produced by Protein Supramolecule, ” Japanese Journal of Applied Physics ,vol. 45, No. 11, 2006, pp. 8946–8951. [16] 黃俊銘，” Control and detection of APTES polarization with XPS,” National University of Tainan Master thesis(2008). [17] Weihua Guan, “Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide,” J. Phys. D: Appl. Phys, vol. 40, (2007) 2754–2758. [18] Yingtao Li, Su Liu, “Using different work function nanocrystal materials to improve the retention characteristics of nonvolatile memory devices, ” Microelectronics Journal, vol.40, 2009 , p.92–94, Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People’s Republic of China. [19] H. Stafast, “Generation and annealing of defects in virgin fused silica (type III) upon ArF laser irradiation: Transmission measurements and kinetic model, ” Journal of Non-Crystalline Solids ,vol. 354, (2008) , p.25–31. [20] Mitsutoshi Miyasakaa , “Excimer laser annealing of amorphous and solid-phase-crystallized silicon films, ” JOURNAL OF APPLIED PHYSICS, vol.86, NUMBER 10, Received 13 April 1999; accepted for publication 16 August 1999. [21] E.G. Parada, “Improvement of silicon oxide film properties by ultraviolet excimer lamp annealing,” Applied Surface Science, vol. 86, (1995) , p.294-298. [22] Yasuo Hiroshige, “Formation of High-Quality SiO2 and SiO2/Si Interface By Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing, ” Japanese Journal of Applied Physics 49 (2010) 08JJ01. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26485 | - |
| dc.description.abstract | 本研究論文中，我製作金氧半(MOS)結構含有化學還原法製成之金奈米晶粒的記憶體元件，目的是為了儲存電荷。金奈米晶粒的密度及均勻度是藉由掃描式電子顯微鏡觀察，因為使用不同介面活性劑在沈積金奈米晶粒會有均勻度上的不同，而均勻度會造成不同的差異在高頻電容電壓曲線上，因為均勻度是聚積出現的關鍵。大家都知道使用電漿輔助化學氣相沈積成長控制氧化層的品質較差，所以我想利用KrF準分子雷射熱退火提升氧化層的品質。透過此種方式，KrF準分子雷射可以改善金奈米晶粒非揮發性記憶體在電性上的表現。接著我使用不同能量密度及不同發數，並且發現在特定雷射條件，即低能量密度且多發數可以擁有較佳的元件電性。另外根據電荷流失百分比，討論儲存電荷在不同KrF準分子雷射參數下在金奈米晶粒及氧化層缺陷的relaxation time及儲存比例。最後探討經過KrF準分子雷射熱退火後的二氧化矽膜會因為化學鍵結變化造成光學特性上的不同。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-08T07:12:05Z (GMT). No. of bitstreams: 1 ntu-100-R98943065-1.pdf: 1989982 bytes, checksum: b60f1747fb1389368a4fb71f1dabaf29 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 目 錄
口試委員會審定書……………………………………………………………… ….. I 誌謝 III 中文摘要 IV ABSTRACT V 第一章 簡介 1 1.1 簡介 1 1.2 論文組織 2 第二章 基本原理介紹 3 2.1 量測儀器及量測方法介紹 3 2.2傅氏轉換紅外線光譜儀及量測方法的介紹 3 2.3掃描式電子顯微鏡 4 2.4 記憶體簡介 7 2.5 記憶體性能考量因素 8 2.6 非揮發性金奈米晶粒記憶體 9 2.7 化學還原法製作金奈米晶粒浮動閘極 9 2.8 實驗中元件電性測量的儀器 10 2.9 導納(ADMITTANCE)電性測量分析 10 2.10 電荷儲存能力 (CHARGE RETENTION)電性測量 13 2.11 中性平帶電壓電性測量 17 2.12 準分子雷射作用原理 21 第三章 元件製備流程 25 3.1 熱氧化成長穿隧氧化層 (TUNNELING OXIDE) 27 3.2 利用APTES(3-氨丙基三乙氧基矽烷)當作沈積金奈米晶粒的介面活性劑(SURFACTANT) 27 3.3 利用反應式離子蝕刻系統清除金奈米晶粒周圍的有機物 28 3.4 沈積控制氧化層(CONTROL OXIDE) 28 3.5 利用準分子雷射對控制氧化層達到熱退火(ANNEAL)的效果 30 3.6 正電鋁電極 30 3.7 塗佈(COATING)光阻 31 3.8 軟烤 (SOFT BAKE) 31 3.9 曝光與顯影 32 3.10 硬烤 (HARD BAKE) 32 3.11 濕蝕刻 (WET ETCHING) 32 3.12 去光阻 33 3.13 背面鋁電極 33 第四章 實驗結果和討論 35 4.1 選擇使用金奈米晶粒當作我研究中的金屬晶粒 35 4.2 短分子APTES介面活性劑沈積金奈米晶粒有較佳均勻度 36 4.3 金奈米晶粒在不同介面活性劑(SURFACTANT)均勻度的比較 38 4.4 3-氨丙基三乙氧基矽烷與POLY-LYSINE在高頻電容電壓曲線上的不同 40 4.5 利用電荷流失百分比、介面缺陷密度、中性平帶電壓探討準分子雷射在不同能量密度對氧化層缺陷熱退火後的影響 41 4.6利用電荷流失百分比、介面缺陷密度、中性平帶電壓探討準分子雷射在不同發數對氧化層缺陷熱退火後的影響 47 4.7 利用電荷流失百分比分析電子在金奈米晶粒及缺陷的RELAXATION TIME及儲存的比例 49 4.8 分析經過準分子雷射在不同能量密度下電子在金奈米晶粒及缺陷的RELAXATION TIME及儲存的比例 50 4.9 分析經過準分子雷射在不同發數(PULSE NUMBER)下電子在金奈米晶粒及缺陷的RELAXATION TIME及儲存的比例 54 4.10 KRF準分子雷射熱退火造成氧化層內鍵結的變化 56 第五章 結論 59 參考文獻 60 | |
| dc.language.iso | zh-TW | |
| dc.subject | 金奈米晶粒 | zh_TW |
| dc.subject | 高頻電容電壓曲線 | zh_TW |
| dc.subject | 聚積 | zh_TW |
| dc.subject | 介面活性劑 | zh_TW |
| dc.subject | KrF準分子雷射 | zh_TW |
| dc.subject | high frequency capacitance voltage curve | en |
| dc.subject | gold nanoparticle | en |
| dc.subject | KrF excimer laser | en |
| dc.subject | surfactant | en |
| dc.subject | accumulation | en |
| dc.title | 利用低能量密度準分子雷射熱退火改善金奈米晶粒非
揮發性記憶體 | zh_TW |
| dc.title | Apply Low Energy Density Excimer Laser Annealing to
Improve Gold Nanoparticle Nonvolatile Memory | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 孫允武,孫建文,田維誠,林致廷 | |
| dc.subject.keyword | 高頻電容電壓曲線,聚積,介面活性劑,KrF準分子雷射,金奈米晶粒, | zh_TW |
| dc.subject.keyword | high frequency capacitance voltage curve,accumulation,surfactant,KrF excimer laser,gold nanoparticle, | en |
| dc.relation.page | 62 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2011-08-11 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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