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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張所鋐(Shuo-Hung Chang) | |
dc.contributor.author | Ming-Wei Liao | en |
dc.contributor.author | 廖銘瑋 | zh_TW |
dc.date.accessioned | 2021-06-08T07:10:19Z | - |
dc.date.copyright | 2008-08-04 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-07-30 | |
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Hicks, “Deposition of silicon dioxide films with a non-equilibrium atmospheric pressure plasma jet”, Plasma Source Science and Technology, Vol. 10, pp. 573-578, 2001. [29] Jenq-Shiuh Chou and Si-Chen Lee, “Effect of porosity on infrared-absorption spectra of silicon dioxide”, J. Appl. Phys., Vol. 77, No.4, 1995. [30] Chih-Cheng Kuo, “Mechanical Properties of Silicon Dioxide Film Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition”, National Taiwan University, 2007. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26439 | - |
dc.description.abstract | 本文係利用噴射式大氣電漿鍍膜技術,將二氧化矽薄膜沉積在高分子材料聚碳酸酯(Polycarbonate,PC)表面,並探討不同特性的二氧化矽薄膜對阻燃性質提升的影響。電漿氣體為氦氣並在電源以射頻(Radio Frequency, RF)13.56 MHz來驅動電漿源。使用有機矽源的四乙氧基矽烷(tetraethoxysilane,TEOS)當作沉積二氧化矽薄膜的前驅物。改變不同的前驅物流量、功率大小及氧氣流量等實驗因子,來掌握二氧化矽薄膜的特性,了解薄膜孔洞性的變化。使用霍氏轉換紅外光譜儀(FTIR)、原子力顯微鏡(AFM)及掃描型電子顯微鏡(SEM)來分析二氧化矽薄膜的特性,同時以最低限氧指數(limiting oxygen index, LOI)的量測做為探討阻燃性的依據。
經大氣電漿所沉積的二氧化矽薄膜其孔洞性會受到成膜速率的影響,實驗結果發現二氧化矽薄膜的孔洞性隨著成膜速率的上升而增加,因此欲沉積緻密性較高的薄膜,應選擇成膜速率較低的參數。從最低限氧指數的量測發現,原本未沉積二氧化矽薄膜的最低限氧指數為22,鍍上孔洞性低的薄膜,可提升最低限氧指數至27,而相對地,孔洞性高的薄膜,對於阻燃性質的提升並無改善的現象。 | zh_TW |
dc.description.abstract | Atmospheric pressure (AP) plasma chemical vapor deposition (CVD) process is utilized in this paper. We coated silica films on polycarbonate (PC) to enhance the flame retardant of PC. The AP apparatus is developed by ITRI. The plasma reactor operates by feeding helium gas between two electrodes driven by a Radio frequency (RF) power at 13.56 MHz at atmospheric pressure and near room temperature. The organic silicon source tetraethoxysilane (TEOS) was utilized as the precursor of silica films. With distinct experiment factors, such as the flow rate of precursor, power and flow rate of oxygen, we measure the thickness to calculate deposition rate, surface roughness, and porosity of the film. Moreover, the variation of the film’s properties were analyzed by Fourier-transform infrared spectrometer (FTIR), atomic force microscope (AFM) and scanning electron microscopy (SEM). The promotion of PC’s flame retardant is illustrated by limiting oxygen index.
The result presented the porosity of the silica film deposited by AP-PECVD increased with higher deposition rate. We should choose the lower deposition rate experiment parameter to get the denser film. The denser film coated on PC raised the LOI value from 22 to 27. However, the porous film can’t contribute any promotion to LOI value. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T07:10:19Z (GMT). No. of bitstreams: 1 ntu-97-R95522640-1.pdf: 7059549 bytes, checksum: abdfe4b99c29fca98843fe692d44ee9d (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 誌謝 I
摘要 II Abstract III 目錄 IV 圖目錄 VI 表目錄 IX 第一章 緒論 1 1.1 前言 1 1.1.1 Silicone系阻燃 2 1.1.2 大氣電漿源 3 1.1.3 化學氣相沉積二氧化矽薄膜 7 1.2 研究動機與目標 11 第二章 文獻回顧 13 2.1 大氣電漿之基本特性 13 2.2 大氣電漿技術沉積二氧化矽薄膜 17 2.3 燃燒基礎理論[1,21,22] 24 2.3.1 燃燒的條件 24 2.3.2 高分子燃燒的過程 25 2.3.3 高分子的阻燃機制 28 2.4阻燃研究文獻回顧 30 第三章 實驗架構與設備 38 3.1 實驗架構 38 3.2實驗設備 39 3.2.1大氣電漿設備 39 3.2.2掃描式電子顯微鏡(SEM) 43 3.2.3原子力顯微鏡(AFM) 43 3.2.4霍氏轉換紅外光譜儀(FTIR) 46 3.2.5最低需氧指數試驗儀(LOI) 46 3.2.6著火時間量測裝置 48 3.3實驗材料準備 48 3.3.1 矽基板試片準備 48 3.3.2 PC基板準備 50 3.3.3 反應物單體準備 50 第四章 實驗結果與分析 52 4.1 實驗過程步驟 52 4.2薄膜性質分析 53 4.3薄膜性質量測結果 55 4.3.1 反應物單體流量實驗 55 4.3.2電源功率實驗 59 4.3.3氧氣流量實驗 62 4.3.4薄膜性質分析結果歸納 65 4.4阻燃性量測結果 69 4.4.1最低限氧指數量測結果 69 4.4.2燃燒過程觀察結果 71 4.4.3著火時間量測結果 73 4.4.4薄膜阻燃討論 74 第五章 結論與未來展望 77 5.1 結論 77 5.2 未來展望 78 參考文獻 80 | |
dc.language.iso | zh-TW | |
dc.title | 大氣電漿沉積二氧化矽薄膜阻燃應用 | zh_TW |
dc.title | Flame Retardant of Silicon Dioxide Film Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 張家歐,施文彬 | |
dc.subject.keyword | 大氣電漿,二氧化矽薄膜,阻燃,孔洞性,最低限氧指數, | zh_TW |
dc.subject.keyword | Atmospheric pressure plasma,SiO2,porosity,flame retardant,limiting oxygen index, | en |
dc.relation.page | 83 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2008-08-01 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
顯示於系所單位: | 機械工程學系 |
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