請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26430
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 黃建璋(Jiang-Jang Huang) | |
dc.contributor.author | Hsin-Ying Lin | en |
dc.contributor.author | 林欣穎 | zh_TW |
dc.date.accessioned | 2021-06-08T07:09:59Z | - |
dc.date.copyright | 2011-08-22 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-08-11 | |
dc.identifier.citation | [1] P. K. Weimer. “The TFT – A new thin film transistor”, Proceeding of the IEEE, 1962.
[2] P. K. Weimer. “The history of liquid-crystal displays”, Proceeding of the IEEE, 2002. [3] D. Hsieh, 'Flat-panel display market outlook,' DisplaySearch, Nov. 2005. [4] J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, 'Performance of thin hydrogenated amorphous silicon thin-film transistors' J. Appl. Phys., vol. 69, pp. 2339-45, 1991. [5] S. S. Kim, B. H. You, H. Choi, B. H. Berkeley, D. G. Kim, and N. D. Kim, “World’s First 240Hz TFT-LCD Technology for Full-HD LCD-TV and Its Application to 3D Display.” SID Digest 2009 [6] http:// techon.nikkeibp.co.jp [7] T. Kamiya, K. Nomura and H. Hosono,” Present status of amorphous In–Ga–Zn–O thin-film transistors” Sci. Technol. Adv. Mat., vol. 11, no. 4 ,2010 [8] Jeong J K et al 2007 7th Int. Meeting on Information Display (27–31 August 2007, Daegue, Korea) 9-3 9-4 [9] R. E. Presley et al., “Transparent ring oscillator based on indium gallium oxide thin-film transistors” Sol. Stat. Electron. 50, 500 (2006). [10] Donald A. Neamen, “Semiconductor Physics and Devices 3rd”, McGraw Hill, p.486–495. [11] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors” Nature 432 488, 2004 [12] Arun Suresh “Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics” 2009 [13] Rick E. Presley “Transparent Electronics: Thin-Film Transistors and Integrated Circuits” 2006 [1] Jiin-Jou Lih, Chih-Feng Sung, Chun-Huai Li, Tiao-Hung Hsiao and Hsin-Hung Lee, “Comparison of a-Si and Poly-Si for AMOLED displays ”, J. Soc. Inf. Disp., 12, 4, pp. 367-371, 2004. [2] M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira, “Gate-bias stress in amorphous oxide semiconductors thin-film transistors”, Appl. Phys. Lett. 95, 063502, 2009. [3] J.M. Lee, I.T. Cho, J.H. Lee, and H.I. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in IGZO TFTs”, Appl. Phys. Lett. 93, 093504, 2008. [4] E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, R. Marins, and L. Pereira ,“Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature”, Appl. Phys. Lett. 85, 2541, 2004. [5] E. M. C. Fortunato , P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, “Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature”, Adv. Mater. 17,No.5, 590 – 594,2005. [6] Takashi Hirao, Mamoru Furuta, Member, IEEE, Takahiro Hiramatsu, Tokiyoshi Matsuda, Chaoyang Li,Hiroshi Furuta, Hitoshi Hokari, Motohiko Yoshida, Hiromitsu Ishii, and Masayuki Kakegawa, “Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs” , IEEE Trans. Electron Devices , vol. 55, NO. 11, 2008. [7] Sang-Hee K. Park, Chi-Sun Hwang, Minki Ryu, Shinhyuk Yang, Chunwon Byun, Jaeheon Shin, Jeong-Ik Lee, Kimoon Lee, Min Suk Oh, andSeongil Im, “Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel” Adv. Mater. 21, 678–682, 2009. [8] F. R. Libsch, and J. Kanicki, “Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors”, Appl. Phys. Lett. 62, 1286, 1993. [9] A. R. Merticaru, and A. J. Mouthaan, “Dynamics of metastable defects in a-Si:H/SiN TFTs”, Thin Solid Films 383, Issues 1-2, Pages 122-124, 2001. [10] M. J. Powell, “Charge Trapping Instabilities in Amorphous Silicon-silicon Nitride Thin-film Transistors”, Appl. Phys. Lett., 43 (6), 597, 1983. [11] R. A. Street, C. C. Tsai, J. Kakalios and W. B. Jackson, “Hydrogen Diffusion in Amorphous Silicon”, Phil. Mag. B, 56(3), 305, 1987. [12] R. B. M. Cross, M. M. De Souza, S. C. Deane, and N. D. Young “A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators” , IEEE Trans. Electron Devices 55, no. 5, 1109 – 1115,2008. [13] R. Navamathavan, E.J. Yang, J.H. Lim, D.K. Hwang, J.Y. Oh, J.H. Yang, J.H. Jang, and S.J. Park. “Effects of Electrical Bias Stress on the Performance of ZnO-Based TFTs Fabricated by RF Magnetron Sputtering”, J. Electrochem. Soc. 153, Issue 5, pp. G385-G388, 2006. [14] M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hosono, “Trap densities in amorphous-InGaZnO4 thin-film transistors”, Appl. Phys. Lett. 92, 133512, 2008. [15] K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors“, Jpn. J. Appl. Phys. 45, pp. 4303-4308, 2006. [16] M. J. Powell, C. van Berkel, and J. R. Hughes, “Time and temperature dependence of instability mechanisms in amorphous silicon thin‐film transistors”Appl. Phys. Lett. 54, 1323, 1989. [17] I.T. Cho, J.M. Lee, J.H. Lee, and H.I. Kwon. “Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses” ,Semicond. Sci. Technol. 24, 015013, 2009. [18] Jun Hyuk Choi, Un Bin Han, Ki Chang Lee, Joon-Hyung Lee, and Jeong-Joo Kim. “Transfer characteristics and bias-stress stability of amorphous indium zinc oxide thin-film transistors” J. Vac. Sci. Technol. B , 27, Issue 2, pp. 622-625, 2009 [1] H. Hosono “Recent progress in transparent oxide semiconductors: Materials and device application”, Thin Solid Films, 2007. [2] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano and H. Hosono, 'Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor', Science, vol.300, no.5623, pp. 1269-1272, May 2003. [3] J. F. Wager, D. A. Keszler and R. E. Presley, “Transparent Electronics”, Springer, 2007. [4] R. Hayashi et al., “Circuits using uniform TFTs based on amorphous In–Ga–Zn–O” J. Soc. Inf. Display 15, 915 (2007). [5] J. B. Kim et al., “Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition”, Applied Physics Letters 94, 142107 (2009). [6] J. B. Kim et al., “High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator”, Applied Physics Letters 93, 242111 (2008). [7] Sang Yeol Lee et al., “Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor”, Applied Physics Letters 98, 122105 (2011) [8] G. K. Reeves and H. B. Harrison, “Obtaining the specific contact resistance from transmission line model measurements” Electron Device Letters 3, 111 (1982). [9] N.W Ashcroft and D. Stroud, “Theory of the Thermodynamics of Simple Liquid Metals” Solid State Physics, vol.33 (1978). [10] Jin-Seong Park et al., “Control of threshold voltage in ZnO-based oxide thin film transistors”, Applied Physics Letters 93, 033513 (2008) [1] R. E. Presley et al., “Transparent ring oscillator based on indium gallium oxide thin-film transistors” Sol. Stat. Electron. 50, 500 (2006). [2] M. Ofuji et al., “Fast thin-film transistor circuits based on amorphous oxide semiconductor,” IEEE Electron Device Lett., vol. 28, no. 4, pp. 273–275, 2007. [3] “Analysis and Design of Digital Integrated Circuits -in Deep Submicron Technology”, David A. Hodges [4] Donald A. Neamen, “Microelectronics Circuit Analysis and Design”. [5] Jie Sun et al., “ZnO Thin Film Transistor Ring Oscillators with sub 75 nsec Propagation Delay”, IEEE, (2007). [6] Jie Sun et al., “ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay”, IEEE Electron Device Lett., vol. 29, no. 7, (2008). [7] Dalong Zhao et al., “Fast Flexible Plastic Substrate ZnO Circuits”, IEEE Electron Device Lett., vol. 31, no. 4, (2010). [8] Huaxiang Yin et al., “High Performance Low Voltage Amorphous Oxide TFT Enhancement/Depletion Inverter through Uni-/Bi-Layer Channel Hybrid Integration”, IEDM, (2009). [9] “The Designer's Guide to Jitter in Ring Oscillators”, John A. McNeill and David S. Ricketts [10] “Fundamentals of Semiconductor Devices”, Richard Anderson [11] “CMOS Active Inductors and Transformers”, Yuan, Fei | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26430 | - |
dc.description.abstract | 薄膜電晶體已在平面顯示器的應用上發展了十數年。然而,非晶矽薄膜電晶體的低載子遷移率與不穩定性及多晶矽薄膜電晶體的不一致性限制了大面積面板和電流驅動之電路的發展。高載子遷移率、大面積製作、低成本…等益處使得非晶態氧化物半導體成為量產薄膜電晶體的新興材料。
在本論文中,高溫成膜的氧化鋅薄膜電晶體有超過9次方的電流開關比,並且製作和比較不同退火時間下元件在閘極偏壓之下的穩定性,也導入定量萃取出元件的生命期的Stertched-Exponential Time Dependence,更進一步的將生命期最長(1.26x106s)的元件在變溫下作穩定性測驗,成功的萃取出0.57eV的元件活化能。 此外我們製作了氧化銦鎵鋅薄膜電晶體以克服氧化鋅的缺陷問題,並進一步將飽和載子遷移率推進至16.5 cm2/Vs以利電路的應用。以此材料製作的增強型反向器的直流增益達到2.5,且環形震盪器可在20伏特之下操作在8.7MHz的頻率以及0.37伏的峰對峰值。與其他研究團隊的增強型電路相比,這是目前最快的操作頻率。我們也引入頻率和一些製程參數的關係式,以便於進一步調整其操作頻率,其中元件通道層的長度對頻率有最大的影響。總體而言,如要更加推進電路的品質,電路的匹配設計以及電路參數的最佳化都是不可或缺的。 | zh_TW |
dc.description.abstract | Thin-film transistor (TFT) has been developed to be applied on the flat panel display (FPD) in decades. However, the low mobility and instability of a-Si:H TFTs and the poor uniformity of poly-Si TFTs are insufficient to applied on large size substrate and current driving circuits. The amorphous nature of amorphous oxide semiconductor (AOS) is attractive for manufacturing because of their high mobility (> 10 cm2/Vs), large-area, low-cost, transparent, and possibly flexible electronics applications.
In this thesis, a high temperature deposited ZnO film is deposited to fabricate the high performance TFT, including an on-off ratio over 109. The effects of gate bias and thermal stress induced threshold voltage shift for ZnO TFTs are discussed. We compared three samples with various post ZnO growth annealing durations. The best result shows that the threshold voltage shift (ΔVth) is only 2.2V after a 1.3×104s stress at the gate bias 20V. And the ΔVth can be correlated to the stress time following the charge trapping mechanism. The characteristic trapping time τ was calculated to be 1.26×106 s. Finally, the characteristic trapping time was extracted at different temperatures and obtaining an average effective energy barrier Eτ of 0.57eV. The a-IGZO TFTs are employed to overcome the drawback of ZnO film forming defects and grain boundaries. The a-IGZO TFT reaches a higher saturation mobility of 16.5 cm2/Vs than ZnO TFT and has a better and more suitable performance than ZnO-based TFTs to develop the TFT circuits. The transconductance and extraction of resistivity in a-IGZO film by TLM method are also discussed. The design and implementation of the enhancement-mode inverter and the corresponding ring oscillator using a-IGZO TFTs are presented in the last part of this thesis. The DC gain and transient response are both extracted to examine the potential on realizing ring oscillators. An inverter DC gain of 2.5 biased at a supply voltage of 15V and a slew rate of 0.41V/μs are achieved separately. And an a-IGZO TFT ring oscillator with a channel length of 2μm and a beta ratio of 5 possesses an oscillator frequency 8.7 MHz and Vp-to-p = 0.37V biased at 20V. The operational frequency is expressed in a simple equation to further develop the frequency tuning method. It is mainly influenced by the channel length of the a-IGZO TFTs. Other design rules of thumb to improve the frequency are discussed. At last, the matching work by adding extra passive elements is required between circuit networks to minimize signal reflection at their interfaces. In summary, the device parameters can be sophisticated designed and optimized to improve the circuit performance. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T07:09:59Z (GMT). No. of bitstreams: 1 ntu-100-R98941038-1.pdf: 3849824 bytes, checksum: cdfc45006405888b50a4116c7a339aae (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | Chapter 1 Introduction 1
1.1 Overview 1 1.1.1 Present status and limitation of amorphous silicon based TFT technology 1 1.2 Literature review and theory 7 1.2.1 TFT device structure and operation 7 1.2.2 Enhancement mode inverters 11 1.1.3 Ring oscillators 14 References 16 Chapter 2 ZnO TFTs and Study of Stability 18 2.1 Introduction 18 2.1.1 ZnO TFT stability 19 2.1.2 The stretched exponential model of a-Si TFT 20 2.2 Device Fabrication 23 2.3 Device Characterizations 25 2.3.1 Electrical properties of TFTs 25 2.3.3 Gate bias stress on ZnO TFTs 30 2.3.4 Effective energy barrier and the thermal factors 38 References 41 Chapter 3 High Performance a-IGZO TFTs 45 3.1 Introduction 45 3.2 Device fabrication 48 3.3 Device Characterizations 50 3.3.1 Characteristics of IDS-VGS and IDS-VDS relationship 50 3.3.2 Resistivity measurement using the TLM method 54 References 58 Chapter 4 Circuit Application Based on a-IGZO TFTs 60 4.1 Introduction 60 4.2 Fabrication of ring oscillator circuits 61 4.3 Circuit performance 63 4.3.1 Performance of the inverter 63 4.3.2 Performance of the ring oscillator 69 4.3.3 Methods for frequency tuning 75 4.4 Impedance matching 79 References 81 Chapter 5 Conclusions and Future Work 82 5.1 Conclusions 83 5.2 Future work 86 | |
dc.language.iso | en | |
dc.title | 金屬氧化物薄膜電晶體電路設計與分析 | zh_TW |
dc.title | Design and Analysis of Metal Oxide Thin-Film Transistor Circuits | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 胡振國(Jenn-Gwo Hwu),陳奕君(I-Chun Cheng),黃俊郎(Jiun-Lang Huang) | |
dc.subject.keyword | 薄膜電晶體,電路,環形震盪器, | zh_TW |
dc.subject.keyword | Thin-film-transistor,a-IGZO,circuit,ring-oscillator, | en |
dc.relation.page | 86 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2011-08-12 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-100-1.pdf 目前未授權公開取用 | 3.76 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。