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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 劉致為(Chee-Wee Liu) | |
dc.contributor.author | Chih-Yuan Chen | en |
dc.contributor.author | 陳志遠 | zh_TW |
dc.date.accessioned | 2021-06-08T06:56:34Z | - |
dc.date.copyright | 2009-07-24 | |
dc.date.issued | 2009 | |
dc.date.submitted | 2009-07-23 | |
dc.identifier.citation | 1.3 References
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Jenkins, Alberto Valdes-Garcia, Joshua P. Small, Damon B. Farmer, and Phaedon Avouris, “Operation of Graphene Transistors at Gigahertz Frequencies,” Nano Lett. Vol. 9, No.1 p422 (2009). [7] Kyoko Nakada, Mitsutaka Fujita, Gene Dresselhaus and Mildred S. Dresselhaus,” Edge state in graphene ribbons: Nanometer size effect and edge shape dependence,” Phys. Rev. B 54, 17954 - 17961 (1996). 2.6 References [1] Jifeng Liu, Xiaochen Sun, Dong Pan, Xiaoxin Wang, Lionel C. Kimerling, Thomas L. Koch, and Jurgen Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express Vol. 15 Issue 18, pp.11272-11277 (2007). [2] Jifeng Liu, Xiaochen Sun, Piotr Becla, Lionel C. Kimerling, and Jurgen Michel, “Towards a Ge-based laser for CMOS Applications,” 5th IEEE International Conference on Group IV Photonics, 17-19 Sept. 2008. [3] G. A. Thomas, E. I. Blount and M. Capizzi, “Indirect recombination mechanisms in germanium,” Phys. Rev. B 19, 702 (1979). [4] B. K. Ridley, Quantum Processes in Semiconductors/2nd Edition. Oxford (1998). [5] S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley (1995). [6] Manuel Cardona and Fred H. Pollak, “Energy-Band Structure of Germanium and Silicon: The k•p Method,” Phys. Rev. 142, 530 - 543 (1966). [7] N. Bernstein, M. J. Mehl, and D. A. Papaconstantopoulos, “Nonorthogonal tight-binding model for germanium,” Phys. Rev. B 66, 075212 (2002). [8] W. C. Dash and R. Newman, “Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K,” Phys. Rev. 99, 1151 - 1155 (1955). [9] M. J. CHEN, C. S. TSAI1;2 and M. K. WU, “Optical Gain and Co-Stimulated Emissions of Photons and Phononsin Indirect Bandgap Semiconductors,” Jpn. J. Appl. Phys. 45 pp. 6576-6588 (2006). [10] J. M. Luttinger and W. Kohn, “Motion of Electrons and Holes in Perturbed Periodic Fields,” Phys. Rev. 97, 869 - 883 (1955). [11] Physics of Group IV Elements and III–V Compounds, edited by O. Madelung, Landolt-Börnstein:Numerical Data and Functional Relationships in Science and Technology (Springer, Berlin, 1982), vol.17a. [12] Chris G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Phys. Rev. B 39, 1871-1883 (1989). [13] M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” J. Appl. Phys. 80, 2234 (1996). 3.5 References [1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, “Electric Field Effect in AtomicallyThin Carbon Films,” Science 306, 666 (2004). [2] S.V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, and A. K. Geim1, “Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer,” Phys. Rev. Lett. 100, 016602 (2008). [3] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, “Electric Field Effect in AtomicallyThin Carbon Films,” Science 306, 666 (2004). [4] Azad Naeemi and James D. Meindl, “Conductance Modeling for Graphene Nanoribbon (GNR) Interconnects,” IEEE Electron Device Lett., Vol. 28 No. 5, pp. 428-431 (2007). [5] Murali, R., Brenner, K., Yang, Y., Beck, T. and Meindl, J. D., “Resistivity of Graphene Nanoribbon Interconnects,” IEEE Electron Device Lett., Vol. 30 No. 6, pp. 428-431 (2009). [6] Riichiro Saito and G. Dresselhaus, Physical properties of carbon nanotubes. Imperial College Press (1998) [7] S. Reich, J. Maultzsch, and C. Thomsen, “Tight-binding description of graphene,” Phys. Rev. B 66, 035412 (2002). [8] B. K. Ridley, Quantum Processes in Semiconductors/2nd Edition. Oxford (1998). [9] S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley (1995). [10] Thomas Garm Pedersen, Kjeld Pedersen, and Thomas Brun Kriestensen,” Optical matrix elements in tight-binding calculations,” Phys. Rev. B 63, 201101 (2001). [11] C. P. Chang, B. R. Wu and R. B. Chen,” Deformation effect on electronic and optical properties of nanographite ribbons,” J. Appl. Phys. 101, 063506 (2007). [12] Thomas G. Pedersen,” Analytic calculation of the optical properties of graphite,” Phys. Rev. B 67 113106 (2003) [13] Kyoko Nakada, Mitsutaka Fujita, Gene Dresselhaus and Mildred S. Dresselhaus,” Edge state in graphene ribbons: Nanometer size effect and edge shape dependence,” Phys. Rev. B 54, 17954 - 17961 (1996). [14] L. Brey and H. A. Fertig,” Electronic states of graphene nanoribbons studied with the Dirac equation,” Phys. Rev. B 73, 235411 (2006). 4.5 Reference [1] Kyoko Nakada, Mitsutaka Fujita, Gene Dresselhaus and Mildred S. Dresselhaus,” Edge state in graphene ribbons: Nanometer size effect and edge shape dependence,” Phys. Rev. B 54, 17954 - 17961 (1996). [2] L. Brey and H. A. Fertig,” Electronic states of graphene nanoribbons studied with the Dirac equation,” Phys. Rev. B 73, 235411 (2006). [3] D. Gunlycke, D. A. Areshkin and C. T. White, “Semiconducting graphene nanostrips with edge disorder,” Appl. Phys. Lett. 90, 142104 (2007). [4] LEVENTE TAPASZTO´, GERGELY DOBRIK, PHILIPPE LAMBIN AND LA´ SZLO´ P. BIRO´, “Tailoring the atomic structure of graphene nanoribbons by scanning tunnelling microscope lithography,” Nature Nanotechnology 3, 397 - 401 (2008). [5] Xinran Wang, Yijian Ouyang, Xiaolin Li, Hailiang Wang, Jing Guo, and Hongjie Dai,” Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors,” Phys. Rev. Lett. 100, 206803 (2008). 5.3 Reference [1] Jifeng Liu, Xiaochen Sun, Piotr Becla, Lionel C. Kimerling, and Jurgen Michel, “Towards a Ge-based laser for CMOS Applications,” 5th IEEE International Conference on Group IV Photonics, 17-19 Sept. 2008. [2] Shu-Wei Chang and Shun Lien Chuang, “Theory of Optical Gain of Ge–SixGeySn1-x-y Quantum-Well lasers,” IEEE JOURNAL OF QUANTUM ELECTRONICS, Vol. 43 Issue 3 pp. 249-256 (2007). [3] Young-Woo Son, Marvin L. Cohen and Steven G. Louie1, “Energy Gaps in Graphene Nanoribbons,” Phys. Rev. Lett. 97, 216803 (2006). [4] Hassan Raza and Edwin C. Kan, “An extended Hückel theory based atomistic model for graphene nanoelectronics,” J. Comp. Elec. 7, 372 (2008). [5] Roberto Grassi, Stefano Poli, Elena Gnani, Antonio Gnudi, Susanna Reggiani and Giorgio Baccarani, “Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs,” Solid-State Electronics 53 pp. 462-467 (2009). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25879 | - |
dc.description.abstract | 本論文包含兩個主題。在第一個主題中,我們推導了鍺半導體的光學增益模型並探討鍺半導體在雷射應用上的可能性。透過未伸展形變與伸展形變鍺半導體之光學增益模擬結果,我們發現鍺半導體中之光學增益確實可經由雙軸伸張應力而獲得提升。然而,過大的伸展應力將會使鍺半導體之光學增益頻譜紅移,並造成1550nm區域之光學增益減少。透過本模擬計算,最佳的形變條件是1.25%的伸張形變,其最低之臨界輸入載子密度為4.35x1019 cm-3。
在第二個主題中,我們探討了單層石墨與奈米石墨帶之電子與光學特性。我們利用最鄰近緊束模型(Nearest neighbor tight binding model)計算其能帶結構。並根據此能帶結構,搭配緊束哈密爾敦之梯度函數,得到其吸收光譜。此外,我們也探討了奈米石墨帶之位相效應的問題。隨著位相角度的增加,越來越強大的邊緣電子模態會縮小奈米石墨帶之能隙。我們的計算結果顯示:邊緣電子模態受位相變化的影響是非常敏銳的,即使只有6.6°的位相變化也會造成很強的邊緣電子模態。 | zh_TW |
dc.description.abstract | There are two topics included in this thesis. In the first topic, we develop a theoretical model for optical gain of Germanium (Ge) to investigate the possibility for Ge to be applied into the laser devices. Optical gains of relaxed and tensile strained Ge are all simulated using many reasonable material parameters. Our simulation results show that the optical gain can be much enhanced by biaxial tensile strain, and making the laser application possible for Ge. However, excessively large tensile strain would also cause the red shift of gain spectrum and eliminate the gain at 1550nm. The optimum strain condition for Ge 1550nm laser is 1.25% tensile strain and the minimum threshold injected carrier density is 4.35x1019 cm-3.
In the second topic, we discuss the electronic and optical properties of graphene and graphene nano ribbon (GNR). The nearest-neighbor tight binding approximation is used to calculate the band structures for the systems. Based on these band structures, the absorption spectra can be obtained with the k-space gradient of the tight-binding Hamiltonian. The issue of the orientation effect in GNR is also discussed. Due to the stronger and stronger edge state, the band gap of GNR shrinks at higher orientation angles. Our calculation result shows the subtle reaction of edge state to the changing of the orientation. Even an orientation as small as 6.6° can induce a very strong edge state. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T06:56:34Z (GMT). No. of bitstreams: 1 ntu-98-R96943045-1.pdf: 2719243 bytes, checksum: 4f1c541e0ae76d8044d4c6fd94b43701 (MD5) Previous issue date: 2009 | en |
dc.description.tableofcontents | 摘要 III
Abstract IV List of Figures VII Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Organization 3 1.3 References 4 Chapter 2 Theoretical Calculation for Optical Gain of Relaxed and Strained Germanium 6 2.1 Introduction 6 2.2 Optical Gain Model 7 2.2.1 Indirect Optical Gain 7 2.2.2 Direct Optical Gain 12 2.3 The Simulation Result of Optical Gain for Ge 13 2.4 Strain Induced Optical Gain Enhancement 17 2.4.1 Biaxial Strain Effect on Germanium Band Structure 17 2.4.2 The Simulation Result of Optical Gain for Strained Ge 18 2.5 Summary 22 2.6 References 23 Chapter 3 Electronic and Optical Probability of Graphene and Graphene Nano-Ribons 25 3.1 Introduction 25 3.2 Electronic and Optical Properties of Graphene 26 3.2.1 Band Structure of Graphene 27 3.2.2 Optical Properties of Graphene 30 3.3 Electronic and Optical Property of Graphene Nano-Ribbons 33 3.3.1 Band Structure of Graphene Nano-Ribbons 33 3.3.2 Optical Probabilities of Graphene Nano-Ribon (GNR) 38 3.4 Summary 42 3.5 References 42 Chapter 4 Edge State and Orientation Effect of Graphene Nano-Ribbons 44 4.1 Introduction 44 4.2 Armchair and Zigzag Graphene Nano-Ribbons 44 4.3 Orientation Effect of Graphene Nano-Ribbons 47 4.3.1 Orientation Effect on Band Structures and Edge States 49 4.3.2 The Orientation Effect on Band Gap 52 4.4 Summary 56 4.5 Reference 56 Chapter5 Conclusion 58 5.1 Summary 58 5.2 Future Work 59 5.3 Reference 60 | |
dc.language.iso | en | |
dc.title | 鍺半導體之光學增益模型與單層石墨之光電特性 | zh_TW |
dc.title | Theoretical Model for Optical Gain of Germanium & Electronic and Optical Properties of Graphene & Electronic and Optical Properties of Graphene | en |
dc.type | Thesis | |
dc.date.schoolyear | 97-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 李勝偉(Sheng-Wei Lee),林中一(Chung-Yi Lin),許晉瑋(Jin-Wei Shi),陳敏璋(Miin-Jang Chen) | |
dc.subject.keyword | 光學增益,鍺半導體雷射,非直接能,伸張應力,奈米石墨帶,緊束模型,邊緣電子模態, | zh_TW |
dc.subject.keyword | Optical gain,Germanium lasers,indirect band gap,tensile strain,graphene nano ribbon,tight binding,edge state, | en |
dc.relation.page | 60 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2009-07-24 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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