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標題: | 電阻式記憶體之物理機制與 SPICE 模型建立 Physical Mechanisms and SPICE Modeling of Resistive Random Access Memory |
作者: | Huan-Lin Chang 張環麟 |
指導教授: | 劉致為(Chee-Wee Liu) |
關鍵字: | 電阻式記憶體,相變化記憶體,物理機制,SPICE 模型, Resistive Random Access Memory,Phase Change Random Access Memory,Physical Mechanisms,SPICE Modeling, |
出版年 : | 2011 |
學位: | 博士 |
摘要: | 本論文建立了相變化記憶體和電阻式記憶體的 SPICE 電路模型,並在第四章中探討了電阻式記憶體的切換物理機制。附錄包含使用雷射切割降低雙功率放大器間的干擾及極紫外光照射矽鍺異質接面雙極電晶體之效應另外兩個主題。
第二章提出了改進之相變化記憶體 SPICE 巨觀模型,解決相變化電路的關鍵問題使得 I-V 圖可以更精確地顯示電阻切換行為,R-I 圖也與量測結果相符合。第三章我們使用 Verilog-A 程式語言撰寫相變化記憶體之精簡模型,精確地描述 I-V 圖並提供兩種精確等級的 R-I 圖,基礎版之 R-I 圖適用於大型記憶體電路模擬之快速收斂,而進階版之 R-I 圖適用於需要精確描述電阻轉換過程的情形。 第四章提出電阻式記憶體的物理模型,其中 Ti 層的厚度必須仔細設計,因為此厚度決定了電阻式記憶體中氧空缺的最大量。第五章使用子電路方式建立參數化之 SPICE 模型,未來若能將物理機制嵌入 SPICE 參數中,會對電阻式記憶體的微縮有所幫助,可提供預測物理行為的效果。第六章使用 Verilog-A 程式語言撰寫電阻式記憶體的精簡模型,我們提出了簡易版二階切換的SPICE模型,並提供九個 SPICE 參數供電路設計者使用。由 2x2 電路驗證與 1k bit 電路驗證顯示 SPICE 模型的確可用於 HSPICE 電路設計環境,幫助電路設計團隊加速產品實現。 附錄一說明了如何使用經濟的雷射切割技術降低雙功率放大器間的不當干擾,此技術成功降低了雙功率放大器間的小訊號干擾,同時提升了雙功率放大器操作模式下的單一放大器線性度。 附錄二探討次世代光學顯影技術之極紫外光對矽鍺異質接面雙極電晶體的損害效應,照極紫外光後的基極電流增加是由於空乏區受到極紫外光影響產生的產生-復合陷阱所致,基極電流的增加造成電晶體直流增益下降。 In this dissertation, SPICE models of phase change random access memory (PCM) and resistive random access memory (RRAM) are developed. The physical mechanism of RRAM is studied in particular in Chapter 4. Two appendixes are included for crosstalk reduction of dual PAs using laser treatment and EUV degradation study of SiGe heterojunction bipolar transistors. In Chapter 2, the improved SPICE macromodel of the PCM solves critical prob-lems in the phase change circuit to produce accurate I-V curve with clearly modeled snapback behavior. The R-I curve is also in good agreement with the measured data. In Chapter 3, the compact SPICE model of PCM using Verilog-A accurately describes the I-V curve and provides a fundamental model R-I curve for quick verification of a large memory array with peripheral circuits. The advanced model R-I curve shows improved accuracy as it addresses the gradual resistance transition. In Chapter 4, the thickness of Ti layer should be carefully designed because it de-termines the maximum amount of the oxygen vacancies to be generated in RRAM. In Chapter 5, SPICE model plays a bridging role between device fabrication and circuit implementation in any mature technology. In this chapter, we have demonstrated the making of a parameterized SPICE model for RRAM using subcircuit method. For future scaling of the RRAM, it is critical to understand the physics behind the switching phenomenon and put it into the SPICE model. In Chapter 6, we use the programming language of Verilog-A to develop a compact SPICE model of RRAM for memory circuit design. A two-level switching RRAM model is achieved with nine SPICE parameters. Verification of the proposed model are first done in 2x2 array and then by 1 kbit array with memory peripheral circuits. Appendix A: A cost-effective isolation technique using laser treatment is proposed to suppress the undesired crosstalk between dual power amplifiers (PAs). Laser treat-ment not only reduces the small signal coupling between dual PAs but also enhances the linearity of the PA under dual-PA operation mode. Appendix B: The effects of extreme ultraviolet (EUV) radiation on SiGe hetero-junction bipolar transistors (HBTs) are studied for the first time. The post-EUV base current increase is due to enhanced hole recombination by EUV-induced genera-tion-recombination traps in the depletion region. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25585 |
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