以橢偏儀量測及模擬寬能隙半導體之光學特性

Abstract

橢偏儀是一種利用當光進入材料內部作用時其極化的改變的一種光學量測方法。在基本模型上回歸極限是到實驗所能得的資料內容。也因為如此，橢偏儀為了可以得到更多的資訊通常會量測多角度和多波長。對橢偏儀來說多做一個波長的量測可以增加一筆資訊。對於材料特性而言光學係數的消散可以得到更多的資訊。橢偏儀的特性已經廣泛地被工業和研究應用。傳統上橢偏儀量測波段為紫外光到近紅外光部分對於任何應用在此波段的元件可以得到表面和堆疊特性。橢偏儀已經被建立成為一種具有高敏感度和高正確性的薄膜表面特性量測方法是一種非常有效率的技術。在很多種工業上，可變角度橢偏儀對於形態學是很重要的，而且對於研究新材料和新製程更是一個強而有力的技術。 在本文中，我們報告了不同的半導體的介電常數。對光通訊及網路連結，以矽為基底的光電整合提供了低成本解決方案一個有希望的機會。對三族氮化物材料而言，擁有其反射率及消光係數的知識是有助於製光電元件設計的製造。用穿透及反射量測以藍寶石為基板的氮化鎵、氮化鋁及氮化鋁鎵的光學性質已經被探討。這些特性可以提供在最佳化設計太陽盲光偵測器或是其他光電元件的關鍵資訊。 在很多光學和光電的應用中氧化鋅是被注目的材料。舉例來說，自從在氧化鋅薄膜上發現室溫雷射現象，氧化鋅磊晶是個發展紫外光雷射有機會的材料。 金氧高介電質最近被聚焦為替代目前努力找到在互補金氧半導體元件閘極中氧化矽材料。氧化鉿、氧化鋯及氧化矽混合物可以達到這樣的目標。在化學氣相沉積有機矽酸鹽玻璃交界層介電質對積體電路工業而言形成度量和特性的新方法是具有挑戰性。 對於分析氮化鎵鋁和氮化鎵異質接面場效電晶體六方堆積碳化矽是極佳的基底。不幸的，由於碳化矽差表面性質使得氮化鎵在碳化矽成長品質無法與在一般常用藍寶石基板相比。不論如何，這些表面的備製都是相當的困難。 在微機構鐵電元件中氧化鉛鋯鈦薄膜系統是受矚目的鈣鈦礦材料。氧化鉛鋯鈦薄膜系統唯一性提供很多令人有興趣的元件應用被廣泛地當主題式探討。例如在微聲波元件、遠紅外影像、光電整合及高效能半導體記憶體。

Spectroscopic ellipsometry (SE) is an optical measurement of the polarization change occurring when light interacts with materials. Model-based regression is limited to the information content available from the experimental data. For this reason, ellipsometry is often performed at multiple angles and wavelengths to increase the available information. SE measurements provide additional information for each new wavelength. The optical constant dispersion carries information about many material properties. SE characterization has been applied to a wide range of industrial and research applications. Traditional SE from UV-VIS to NIR can characterize the films and stacks used with any of these device applications. SE has been established to be a very effective technique for the characterization of thin surface layers with high sensitivity and accuracy. Variable angle spectroscopic ellipsometry (VASE) is important for metrology in several industries, and is a powerful technique for research on new materials and processes. In this thesis, we report the dielectric constants of different semiconductors. Silicon based optoelectronics integration offers promising opportunity for low-cost solutions to optical communications and interconnects. The design of optoelectronic devices fabricated from III-nitride materials is aided by knowledge of the refractive index and absorption coefficient of these materials. The optical properties of GaN, AlN and AlGaN grown on sapphire substrates were investigated by means of transmittance and reflectance measurements. These properties provide information critical to the optimal design of solar blind detectors or other optoelectronic devices. ZnO is an attractive material for many applications in optics and optoelectronics. For instance, since a room temperature lasing has been observed in ZnO thin films, the epitaxial ZnO is a promising candidate material for ultraviolet lasers. High-K metal-oxide dielectrics have recently been the focus of substantial ongoing efforts directed towards finding a replacement for SiO2 as the gate dielectric in complementary metal-oxide-semiconductor devices. HfO2, ZrO2, and their SiO2 mixtures show promise for this purpose. The integration of chemical vapor deposited organo-silicate glass (OSG) interlayer dielectrics (ILD) has challenged the IC industry to formulate new methods of metrology and characterization. 6H–SiC are excellent substrates for the synthesis of AlGaN–GaN heterojunction field effect transistors. Unfortunately, the quality of GaN layers grown on SiC is inferior to that grown on the commonly used sapphire substrate due to the relative poor surface properties of SiC. However, preparing such surfaces is relatively difficult. The lead zirconate titanate thin-film system Pb(ZrxTi1-x)O3 (PZT) is one of the most attractive perovskite materials for microstructured ferroelectric devices. The thin film synthesis of PZT is the subject of widespread current interest as its unique properties offer many interesting device applications. Among these are microwave acoustic devices, infrared imagers, integrated optic circuits, optical display, and high performance semiconductor memories.