請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24779
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 劉深淵(Shen-Iuan Liu) | |
dc.contributor.author | Chain-Shin Huang | en |
dc.contributor.author | 黃謙勳 | zh_TW |
dc.date.accessioned | 2021-06-08T05:56:21Z | - |
dc.date.copyright | 2008-02-18 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-01-31 | |
dc.identifier.citation | [1] J. P. Krusius, D. P. Seraphim, R. G. Greene, D. S. Skinner, and B. Yost, “Approaches toward ultra-large FPDs,” Proc. of the IEEE, vol. 90, no. 4, pp. 559-580, April 2002.
[2] D. E. Mentley, “State of flat-panel display technology and future trends,” Proc. of the IEEE, vol. 90, no. 4, pp. 453-459, April 2002. [3] A. Lewis, “Active matrix LCDs: a clear, bright future,” Symp. on VLSI circuits, pp. 5-8, June 1995. [4] Willem den Boer, “Active Matrix Liquid Crystal Displays Fundamentals and Applications ” Elsevier (Singapore)Ptd Ltd . [5] M. Shur, M. Hack, and G. Shaw, “ A new analytic model for amorphous silicon thin-film transistors” J. Appl. Phys., vol.66, pp.3371-3380, August 1989. [6] K. Khakzar and E. H. Lueder, “Modeling of amorphous-silicon thin-film transistor for circuit simulations with SPICE,” IEEE trans. Electron Devices, vol.39, no. 6, pp.3371-3380, June. 1989. [7] R.A. Street, “Hydrogenated amorphous silicon,” Cambridge University Press, 1991. [8] T. Tsukada, “TFT/LCD Liquid-Crystal Displays addressed by Thin-Film Transistors,” Gordon and Breach Publishers. [9] Y. Kuo, “ Thin Film Transistors: Materials and Processes, Volume 1, Amorphous Silicon Thin Film Transistors” Kluwer Academic Publishers, pp. 98-198, 2003. [10] A. Nathan, P. Servati, and K.S. Karim, “TFT Circuit Integration in a-Si:H Technology,” Proc. 23rd International Conference on Microelectronics, vol. 1, 12-15 May 2002. [11] P. Servati and A. Nathan, “Modeling of the Reverse Characteristics of a-Si:H TFTs,” IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 812-819, May 2002. [12] P. L. Staebler and C.R. Wronski, J.Appl. Phys. 51, pp.3262, July 1980. [13] C. Y. Huang, J. Tsai, T. H. Teng and H. Chery, “The Instablity Mechanisms of Hydrogenated Amorphous Silicon Thin Film Transistor under AC Bias Stress” J. Appl. Phys. Vol. 39, pp. 3867-3871, July 2000. [14] Y. Hsiang, Y. H. Tsai, J. W. Tsai, H. C. Cheng and F. C. Su, ”Instability mechanisms for the hydrogenated amorphous silicon thin-film transistor with negative and positive bias stresses on the gate electrodes ”, Appl. Phys. Letter. Vol. 67, No. 1,3, July 1995. [15] M.J. Powell, C. Van Berkel, “Bias dependence of instability mechanisms in amorphous silicon thin film transistor,” Appl. Physic Letter, 51(16), Dec. 1987. [16] M. Powell, “The Physics of Amorphous-Silicon Thin-Film Transistor, ” IEEE Trans. Electron Devices, vol. 36, no. 12, December 1989. [17] Karim, A. Nathan, M. Hack, and W. Milne, “Drain-Bias Dependence of Threshold Voltage Stability of Amorphous Silicon TFTs,” IEEE Trans. Electron Devices, vol. 25, no. 4, April 2004. [18] M. Takabatake, M. Tsumura, and Y. Nagae, “Consideration of Feed-Through Voltage in Amorphous Silicon TFTs,” IEEE Trans. Electron Devices, vol. 40, no. 10, October 1993. [19] R.G. Stewart, “Circuit Design for a-Si AMLCDs with Integrayed Drivers,” SID’95, pp. 89-92, 1995. [20] H. Lebrum, T. Kretz, J. Magarino and N. Szyulo, “Design of integrated Drivers with Amorphous Silicon TFTs for Small Displays. Basic Concepts.”, SID’05 Digest, pp. 950-953, 2005. [21] J. Jeon, W. K. Lee, J. song and H. Kim, “ASG(Armorphous Silicon TFT Gate Driver circuit) Technology for Mobile TFT-LCD Panel.”, IMID’04,2004. [22] R. A. Street, Technology and Applications of Amorphous Silicon, Springer, Heidelberg, Germany, 2000. [23] C. S. Chiang, “Electrical Instability of Hydrogenated Amorphous Silicon TFT for AMLCD,” J. Appl. Phys., Vol.37, pp. 4704-4710, October 1998. [24] C. Chiang, J. Kanicki, and K. Takechi, “Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays,” Jpn. J. Appl. Phys., vol.37, no. 9A, pp. 4704-4710, September 1998. [25] Y. Kaneko, A. Sasano, and T. Tsukada, “Characterization of instability in amorphous silicon thin-film transistors,” J. Appl. Phys., vol. 69, no. 10, pp. 7301-7305, May 1991. [26] C. Y. Huang, T.H. Teng, J. Tsai and H. Cheng, “The Instablity Mechanisms of Hydrogenated Amorphous Silicon Thin Film Transistor under AC Bias Stress” Jpn. J. Appl. Phys. Vol. 39, pp. 3867-3871, June 2000. [27] Y. He, R. Hattori, and J. Kanicki, “ Improved a-Si:H TFT circuits for active-matrix organic light emitting displays” , IEEE Trans. Electron Devices, vol.26 , pp.737-739, August 2005 [28] T. Tsukada “Liquid-Crystal Displays Addressed by Thin-Film Transistors” ,Gordon and Breach Publishers [29] J. Jeon, K. Choo, W. K. Lee, J. Song and H.Kim, “ Integrated a-Si Gate Driver Circuit for TFT-LCD Panel”, SID’ 04 Digest, 2004 [30] D. Plus, “shift register useful as a select line scanner for liquid crystal display”, U.S. Patent 5,222,082,1993 [31] S. H. Moon, Y. S. Lee, M. C. Lee, B. H. Berkeley and N. D. Kim“Integrated a-Si:H TFT Gate Driver circuits on Large Area TFT-LCDs”, SID’07 [32] Y. H. Jang, S.Y. Yoon and B. Kim, “Integrated Gate Driver Circuit Using a-Si TFT with Dual Pull-down Structure”, IDW”04, pp. 333 -336 [33] 紀國鍾、鄭晃忠主編,「液晶顯示器技術手冊」經濟部技術處發行, 2004 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24779 | - |
dc.description.abstract | 液晶顯示器具有許多的優點,已經成為顯示器的主流,在現今的資訊社會裡扮演著不可或缺的角色。本論文主要的目的:以電路的觀點,如何將週邊的驅動電路整合於面板上,使液晶顯示器做的更加緊密,符合短小、輕薄的目標。
主動式a-Si:H TFT液晶顯示器為液晶顯示器的主流,所以本論文先介紹a-Si:H TFT 的物理特性及非理想特性,作為設計整合式電路的基礎。A-Si:H TFT皆引用CMOS的理論來解釋各種物理現象,但是CMOS的理論無法繼續解釋非理想特性。在非理想特性中:寄生電容Cgs、漏電流會影響畫面的品質、臨限電壓偏移現象會造成電路操作失效。唯有避開或補償非理想特性是確保電路有效運作的關鍵。 藉著測試鍵的設計來探討a-Si:H TFT在不同結構時,所存在的寄生電容與漏電流。以S型結構及U型結構為代表,希望降低前兩者的值,而獲得較佳的畫面品質。實驗的結果,U型結構的TFT在減少寄生電容Cgs有較佳的的表現。 介紹面板的週邊驅動系統,重組驅動系統的功能區塊,整理出較適合的整合型閘極驅動電路功能區塊。以領悟的設計準則及偏壓(stress)的量測,解決臨限電壓偏移現象,設計出高可靠性的整合型的閘極驅動電路。 | zh_TW |
dc.description.provenance | Made available in DSpace on 2021-06-08T05:56:21Z (GMT). No. of bitstreams: 1 ntu-97-P94943002-1.pdf: 2669416 bytes, checksum: 1ebf7b1d05d2d711831643a1574b39ab (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 口試委員會審定書 .............. I
誌謝 …………………………………... III 中文摘要 ………………………………... V 目錄 …………………………………... VII 圖目錄 …………………………………... XI 表目錄 …………………………………... XV 第一章 緒論 ………………………... 1 1.1 前言 …………… 1 1.2 動機 ……………… 7 1.3 論文架構 ………… 7 第二章 非晶矽薄膜電晶體物理特性及液晶顯示器驅動機制. 9 2.1 非晶矽半導體 …………………………… 9 2.2 氫化非晶矽薄膜電晶體 ………………… 11 2.3 薄膜電晶體的結構及操作原理 ………… 12 2.4 薄膜電晶體的電流–電壓特性 ………… 14 2.5 光電特性 ………………………………… 18 2.6 臨限電壓偏移效應 ……………………… 19 2.7 寄生效應 ………………………………… 22 2.8 液晶顯示器結構 ………………………… 24 2.8.1 液晶的特性……………………….. 24 2.8.2 內部結構 ……………………….. 25 2.8.3 顯示原理 ……………………….. 28 2.8.4 畫素陣列電路 ………………….. 29 2.9 驅動方法............................ 30 2.10 驅動系統............................ 31 2.10.1時序控制電路 ................ 32 2.10.2 共電極參考電壓源 …………… 33 2.10.3 電壓源轉換器 …………………… 33 2.10.4 Gamma校正參考電壓器 ………… 33 2.10.5 閘極驅動電路 …………………… 33 2.10.5.1移位暫存器 ………………….. 35 2.10.5.2雜散邏輯區塊 ……………….. 35 2.10.5.3電位移轉器 ………………….. 35 2.10.6.1 數位/類比轉換器及類比緩衝放大器 ……… 37 第三章 測試鍵的製作與參數量測…………………………... 39 3.1 測試鍵設計和佈局 ……………………… 39 3.2 測試鍵的量測........................ 42 3.2.1 I-V量測 ...................... 43 3.2.2 C-V量測 ...................... 49 3.3 SPICE MODEL的建立 .................. 51 第四章 使用非晶矽薄膜電晶體實現驅動電路 …………... 55 4.1 元件特性的限制 ………………………… 56 4.2 探討臨限電壓交流模式下偏移效應 …… 57 4.3 溫度效應 ………………………………… 59 4.4 新提出的LCD顯示器驅動系統架構圖 …….60 4.5 GOP系統架構圖 …………………………… 61 4.6 傳統的閘極驅動單元電路 …………………64 4.7 修正的閘極驅動單元電路 ……………… 66 4.7.1第一種型式 …………………… 66 4.7.2第二種型式 …………… .........67 4.8 新提出的閘極驅動單元電路 ………………68 4.8.1 電路解析 ……………………….. 70 4.8.2模擬結果和布局圖 .…………….. 71 4.8.3 量測結果 ……………………….. 73 第五章 結論 ………………………………………………... 77 參考文獻 ……………………………………………........... 79 | |
dc.language.iso | zh-TW | |
dc.title | 運用於主動矩陣液晶顯示器之非晶矽薄膜電晶體驅動電路 | zh_TW |
dc.title | Integrated a-Si:H TFT Driver Circuits on AMLCD Displays | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 李泰成,林宗賢 | |
dc.subject.keyword | 主動矩陣,液晶顯示器,非晶矽薄膜電晶體,驅動電路, | zh_TW |
dc.subject.keyword | TFT,AMLCD,driver,display, | en |
dc.relation.page | 82 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2008-01-31 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-97-1.pdf 目前未授權公開取用 | 2.61 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。