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標題: | 無毒性溶膠凝膠之P及N型氧化鋅透明導電薄膜製程研究 Non-toxic sol-gel processes of P- and N-type ZnO transparent conductive thin films |
作者: | Wen-Jie Wang 王文杰 |
指導教授: | 吳志毅(Chih-I Wu) |
關鍵字: | 無毒性,溶膠凝膠,P型氧化鋅,N型氧化鋅,透明導電氧化物, nontoxic,sol-gel,P-type ZnO,N-type ZnO,transparent conductive oxide, |
出版年 : | 2011 |
學位: | 碩士 |
摘要: | 本篇論文以溶膠凝膠法研究以一無毒性製程製備P及N型氧化鋅透明導電薄膜,探討不同退火氛圍:氧氣、氮氣與真空下,對P及N型氧化鋅薄膜的特性影響。
第一部分為P型氧化鋅透明導電薄膜的製備,前驅物溶液以醋酸鋅為溶質溶解於2-丙醇溶劑中,並添加乙醇胺作為穩定劑,藉由醋酸胺、硝酸銦共摻雜的方式製備P型氧化鋅薄膜,於不同退火氛圍:氧氣、氮氣與真空中,僅在氧氣退火後的氧化鋅薄膜呈現P型的導電性,其電洞濃度、電阻率與載子遷移率分別為+1.58×10^17cm^-3、55.11Ω•cm與0.72cm^2V^-1s^-1。 第二部份為N型氧化鋅透明導電薄膜的製備,前驅物溶液同樣以醋酸鋅為溶質,2-丙醇為溶劑,搭配乙醇胺作為穩定劑,摻雜物則以硝酸銦為主。藉由探討不同的摻雜濃度 (0.75%、1.00%、2.00%、3.00%、5.00%)以及不同的退火氛圍:氧氣、氮氣與真空,對N型氧化鋅特性的影響以得出最佳的結果。實驗結果顯示,於摻雜濃度2.00%,氮氣退火後的N型氧化鋅薄膜有最佳的電性,其電子濃度、電阻率與載子遷移率分別為-1.35×10^18cm^-3、2.62Ω•cm與1.77cm^2V^-1s^-1。另一方面,當摻雜濃度2.00%的N型氧化鋅薄膜,經由第一次的氮氣退火以及第二次的真空退火後可使電性再次提升,其電子濃度、電阻率與載子遷移率分別為-2.34×10^19cm^-3、2.16×10^-2Ω•cm與12.33 cm^2V^-1s^-1。 We investigate nontoxic fabrication processes to derive P and N-type ZnO transparent conductive thin films by sol-gel method and discuss how anneal condition effect the characteristics of P and N-type ZnO thin films. In the first part of the thesis, in order to fabricate P-type ZnO transparent conductive thin films, zinc acetate dehydrate was firstly dissolved in 2-propanol with ethanolamine as the stabilizer and ammonium acetate and indium(Ш) nitrate pentahydrate were used as co-doping materials. In three kinds of different anneal ambients(O2、N2 and vacuum), ZnO thin films exhibit p-type electrical properties only when they were annealed in oxygen ambient, with hole concentration of +1.58×10^17cm^-3、resistivity of 55.11Ω•cm and carrier mobility of 0.72cm^2V^-1s^-1. The second part of the thesis describes the fabrication processes for N-type ZnO transparent conductive thin films. The preparation of precursor solution is similar to P-type ZnO, except that the doping material is only indium(Ш) nitrate pentahydrate. We discuss how different doping concentration(0.75%、1.00%、2.00%、3.00%、5.00%) and anneal ambients(O2、N2 and vacuum) effect the characteristics of N-type ZnO to get the better result. The result show that the N-type ZnO thin films with electron concentration of -1.35×10^18cm^-3、resistivity of 2.62Ω•cm and carrier mobility of 1.77cm^2V^-1s^-1 at doping concentration of 2.00% in nitrogen ambient were achieved. On the other hand, the electrical properties of N-type ZnO thin films at doping concentration of 2.00% can be enhanced again with electron concentration of -2.34×10^19 cm^-3、resistivity of 2.16×10^-2Ω•cm and carrier mobility of 12.33 cm^2V^-1s^-1 after first anneal in nitrogen ambient and second anneal in vacuum ambient. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24720 |
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顯示於系所單位: | 光電工程學研究所 |
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