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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 郭博成 | |
dc.contributor.author | Min-Hui Cheng | en |
dc.contributor.author | 鄭敏慧 | zh_TW |
dc.date.accessioned | 2021-06-08T05:29:18Z | - |
dc.date.copyright | 2011-08-04 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-07-27 | |
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Conference series 191,012024(2009) | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24520 | - |
dc.description.abstract | 本研究以磁控濺鍍的方式製備具有垂直磁異向性之PrFeB薄膜,並探討在各種濺鍍參數(如溫度、瓦數、氬壓、厚度、時間等)下其顯微結構與磁性質的改變,以利於未來應用於垂直磁紀錄媒體。研究結果發現,金屬保護層較Si3N4陶瓷保護層更能幫助PrFeB薄膜磁性質的提升,因為Ta金屬在晶界具有較佳的移動力而促進薄膜矯頑磁力的增加。而熱處理方式的不同也會影響薄膜的磁特性。研究結果顯示基板加熱鍍膜的方式較常溫鍍製再退火的製程更有助於Pr原子的移動而得到硬磁相。同時在基板加熱的過程中,我們也嘗試改變PrFeB的濺鍍環境來控制薄膜中Pr原子的含量,結果發現當Pr成分落在17-20 at.%範圍時可得到良好的磁性質,而PrFeB磁性層的厚度為125nm、Ta緩衝層的厚度為50nm時,薄膜的垂直磁異向性及矯頑磁力可再進一步改善。然而,濺鍍PrFeB時若基板溫度較高,再施予後退火卻只會增加晶粒尺寸及表面粗糙度而弱化原本的磁性質,所以高溫基板鍍製的PrFeB薄膜不需要再施予後退火的熱處理。
本研究中所製備最佳磁性質之PrFeB薄膜的濺鍍之參數為基板溫度600℃、RF150W、氬壓40mtorr、厚度125nm,再搭配Ta緩衝層50nm,此薄膜不需再後退火即可得到良好的垂直磁異向性,其Hc⊥=10.5kOe、Hc//=10.9kOe、S⊥=0.91、S//=0.29,相當有潛力發展成垂直磁記錄媒體材料。 | zh_TW |
dc.description.abstract | In this study, PrFeB thin films with perpendicular magnetic anisotropy were deposited by magnetron sputtering. The effects of sputtering parameters (temperature, sputtering power, Ar working pressure, thickness of the film, annealing time etc.) on microstructure and magnetic properties were investigated. From the results, Ta metal capping layer improved the magnetic properties of PrFeB thin films, due to higher atomic mobility of Ta atoms in grain boundary. Besides, the hard magnetic phase can be obtained by in-situ annealing process (substrate heating) indicating hard phase formed easily on hot substrate. From the composition characterization, a film with good magnetic property usually contents Pr of 17-20 at.%. The perpendicular magnetic anisotropy and coercivity of the thin films could be further improved when the thickness of PrFeB magnetic layer as well as Ta buffer layer were 125nm and 50nm, respectively. Further post-annealing the PrFeB thin films only increased the grain size and the surface roughness, that degraded the magnetic performance. Thus post-annealing process was not necessary for formation of hard phase.
In this study, the optimal sputtering parameters of PrFeB thin film are substrate temperature 600℃, RF power 150W, Ar gas pressure 40mtorr, thickness of PrFeB and Ta buffer layer are 125nm and 50nm, respectively. Good perpendicular magnetic properties of Hc⊥=10.5kOe, Hc//=10.9kOe, S⊥=0.91, and S//=0.29 were obtained with the film structure of Ta(50nm)/PrFeB(125nm)/Ta(20nm). | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T05:29:18Z (GMT). No. of bitstreams: 1 ntu-100-R98527066-1.pdf: 31037941 bytes, checksum: b0b56ff8a6c9190e43bcee7bca07ada1 (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 目錄
誌謝 I 摘要 III Abstract IV 目錄 V 圖目錄 IX 表目錄 XVI 第一章 前言 1 第二章 理論基礎與文獻回顧 4 2-1理論基礎 4 2-1-1 磁記錄原理 4 2-1-2 磁異向性 5 2-1-3 水平磁記錄 6 2-1-4 垂直磁記錄 7 2-1-5 磁記錄材料 8 2-1-6 R2Fe14B晶體結構與特性 8 2-1-7 自旋再取向 10 2-2文獻回顧 11 2-2-1 NdFeB thin film 11 2-2-2 PrFeB thin film 14 2-3 研究動機 16 第三章 實驗方法 23 3-1 實驗流程 23 3-2 靶材選取 24 3-2-1 金屬靶材 24 3-2-2 陶瓷靶材 24 3- 3基板選取與基板清洗 24 3-3-1基板選取 24 3-3-2 基板清洗 24 3-4實驗裝置及薄膜製備 25 3-4-1 實驗裝置 25 3-4-2 薄膜濺鍍步驟 26 3-4-3 熱處理步驟 27 3-5 AFM厚度及表面形貌分析 28 3-6 磁性質分析 28 3-7 薄膜之化學組成分析 29 3-7-1 EPMA之成分分析 29 3-8 微結構分析 29 3-8-1 X光繞射分析 29 3-8-2 TEM微結構分析 29 第四章 實驗結果與討論 42 4-1 常溫鍍製SiNx/PrFeB/SiNx多層膜 42 4-1-1 改變PrFeB的濺鍍瓦數對SiNx/PrFeB/SiNx多層膜之微結構與磁性質的影響 42 4-1-2 SiNx/PrFeB/SiNx多層膜之後退火對微結構與磁性質的影響 43 4-1-3 SiNx/PrFeB/SiNx多層膜之後退火時間對微結構與磁性質的影響 44 4-2 常溫鍍製Ta/PrFeB/Ta多層膜 45 4-2-1 Ta/PrFeB/Ta多層膜之瓦數對微結構與磁性質的影響 46 4-2-2 Ta/PrFeB/Ta多層膜之後退火對微結構與磁性質的影響 46 4-2-3 Ta/PrFeB/Ta多層膜之後退火時間對微結構與磁性質的影響 47 4-3 基板加熱鍍製Ta/PrFeB/Ta多層膜 49 4-3-1 基板溫度對Ta/PrFeB/Ta多層膜微結構與磁性質之研究 49 4-3-1-a DC濺鍍PrFeB之基板溫度對Ta/PrFeB/Ta多層膜微結構與磁性質的影響 49 4-3-1-b RF濺鍍PrFeB之基板溫度對Ta/PrFeB/Ta多層膜微結構與磁性質的影響 50 4-3-2 PrFeB濺鍍瓦數對Ta/PrFeB/Ta多層膜之微結構與磁性質的影響 52 4-3-3 改變PrFeB濺鍍氬壓對Ta/PrFeB/Ta多層膜之研究 54 4-3-3-a PrFeB濺鍍氬壓對Ta/PrFeB/Ta多層膜之微結構影響 54 4-3-3-b PrFeB濺鍍氬壓對Ta/PrFeB/Ta多層膜之磁性質影響 55 4-3-4 PrFeB厚度對Ta/PrFeB/Ta多層膜之研究 56 4-3-4-a 改變PrFeB厚度對Ta/PrFeB/Ta多層膜之微結構影響 57 4-3-4-b 改變PrFeB厚度對Ta/PrFeB/Ta多層膜之磁性質影響 57 4-3-5 Ta緩衝層厚度對Ta/PrFeB/Ta多層膜之研究 59 4-3-5-a Ta緩衝層厚度對Ta/PrFeB/Ta多層膜之微結構影響 59 4-3-5-b Ta緩衝層厚度對Ta/PrFeB/Ta多層膜之磁性質影響 60 4-3-6 後退火溫度對Ta/PrFeB/Ta多層膜之磁性質影響 61 4-4 最佳垂直磁性質之PrFeB薄膜製備 62 第五章 結論 111 參考文獻 113 | |
dc.language.iso | zh-TW | |
dc.title | 垂直磁異向性PrFeB薄膜的製備
垂直磁異向性PrFeB薄膜的製備及其顯微結構與磁性質之研究 | zh_TW |
dc.title | Study of the preparation of
PrFeB thin film with perpendicular magnetic anisotropy Study of the preparation of PrFeB thin film with perpendicular magnetic anisotropy and its microstructures and magnetic properties | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃暉理,孫安正 | |
dc.subject.keyword | 垂直磁異向性,磁紀錄材料,稀土元素,薄膜, | zh_TW |
dc.subject.keyword | perpandicular,magnetic recording material,rare element,thin film, | en |
dc.relation.page | 116 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2011-07-27 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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