使用主動式電感之振盪器動態系統分析及製程、電壓與溫度補償設計

Abstract

在討論主動式電感振盪器的文獻中，本篇論文首次採用電晶體大信號模型以及動態系統分析。相較以往常用的電晶體小信號模型與阻抗分析，能得到更接近主動式電感振盪器實際運作之波形與軌跡特徵。論文內採用SMIC 0.11-μm製程模型來模擬主動式電感振盪器，配合低壓差穩壓器（LDO）以及帶隙（bandgap）參考電壓實現電壓及溫度補償設計，使原本在−20~100°C的溫度範圍中，振盪頻率隨溫度的變化率從6.48%降低至1.60%。在3.0~3.6 V的供應電壓範圍內，振盪頻率的變化率也減低至±0.57%。在製程偏移的部分，使用電容修整陣列，讓振盪頻率在不同製程角（process corner）的情況下皆能夠修整回540 MHz，修整誤差（trim error）在±0.21%以內。

In the research on the oscillators using active inductor, it is first time to propose dynamical systems analysis with large-signal model for the oscillators in this thesis. Comparing to impedance analysis with small-signal model, we can approach more practical waveform and characteristics of the trajectories of the oscillator by dynamical systems analysis with large-signal model. The oscillator presented in this thesis is simulated with SMIC 0.11-μm process model. For the voltage and temperature compensated design, we adopt an LDO and a bandgap reference circuit. Therefore, the oscillation frequency variation is reduced from 6.48% to 1.60% across temperature −20°C to 100°C, and the frequency variation in the supply voltage range from 3.0 V to 3.6 V is ±0.57%. For the process variation, the oscillator using capacitor trimming array could achieve the desired frequency 540 MHz within trim error ±0.21% in any process corner.