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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 呂宗昕 | |
dc.contributor.author | Guo-Ruei Chiu | en |
dc.contributor.author | 邱國瑞 | zh_TW |
dc.date.accessioned | 2021-06-08T05:10:50Z | - |
dc.date.copyright | 2011-07-25 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-07-08 | |
dc.identifier.citation | [1] E. Bacquerel, Comptes Rendues, 9, (1839), 561-567.
[2] W. Shockley, Bell System Technical Journal, 27, (1949), 435-489. [3] D. M. Chapin, C. S. Fuller, and G. L. Pearson, Journal of Applied Physics, 25, (1954), 676-677. [4] L. Kazmerski, D. Gwinner, and A. Hicks, National Renewable Energy Laboratory, (2009). [5] I. Repinsl, M. A. Contreras, B. Egaas, C. DeHart, J. Scharf, C. L. Perkins, B. To, and R. Noufi, Progress in Photovoltaics: Research and Applications, 16, (2008), 235-239. [6] Y. Hagiwara, T. Nakada, and A. Kunioka, Solar Energy Materials and Solar Cells, 67, (2001), 267-271. [7] K. Kushiya, Solar Energy, 77, (2004), 717-724. [8] R. N. Bhattacharya, J. F. Hiltner, W. Batchelor, M. A. Contreras, R. N. Noufi, and J. R. Sites, Thin Solid Films, 361, (2000), 396-399. [9] G. Norsworthy, C. R. Leidholm, A. Halani, V. K. Kapur, R. Roe, B. M. Basol, and R. Matson, Solar Energy Materials and Solar Cells, 60, (2000), 127-134 [10] V. K. Kupar, A. Bansal, P. Le, and O. I. Asensio, Thin Solid Films, 431, (2003), 53-57. [11] R. Herberholtz, V. Nadnau, U. Ruhle, C. Koble, H. W. Schock, and B. Dimmler, Solar Energy Materials and Solar Cells, 49, (1997), 227-237. [12] Y. S. Murthy, B.S. Naidu, and P. J. Reddy, Journal of Materials Science Letters, 9, (1990), 288-290. [13] H. Matsuo, K. Yoshino, T. Ikari, Thin Solid Films, 515, (2006), 505-508. [14] M. R. A. Bhuiyan, M. A. A. Azad, and S. M. F. Hasan, Indian Journal of Pure and Applied Physics, 49, (2011), 180-185. [15] R. L. Byer, M. M. Choy, R. L. Herbst, D. S. Chemla, and R. S. Feigelson, Applied Physics Letters, 24, (1974), 65-68. [16] R. C. Eckardt, Y. X. Fan, R. L. Byer, C. L. Marquardt, M. E. Storm, and L. Esterowitz, Applied Physics Letters, 49, (1986), 608-611. [17] M. T. Whittaker, T. E. Stenger, D. G. Krause, and D. H. Matthiesen, Journal of Crystal Growth, 310, (2008), 1904-1909. [18] Y. S. Murthy, O. M. Hussain, B.S. Naidu, and P. J. Reddy, Material Letters, 10, (1991), 504-508. [19] G. H. Chandra, O. M. Hussain, S. Uthanna, and B. S. Naidu, Materials Science and Engineering, B86, (2001), 60-63. [20] K. Yamada, N. Hoshino, and T. Nakada, Science and Technology of Advanced Materials, 7, (2006), 42-45. [21] M. R. A. Bhuiyan, S. M. F. Hasan, Journal of Physics D: Applied Physics, 39, (2006), 4935-4939. [22] S. M. Patel, V. G. Kapale, Physica Status Solidi, 101, (1987), 87-92. [23] H. Karaagac, M. Parlak, Applied Surface Science, 257, (2011), 5731-5738. [24] M. R. A. Bhuiyan, S. M. F. Hasan, Solar Energy Materials and Solar Cells, 91, (2007), 148-152. [25] H. Karaagac, M. Parlak, Applied Surface Science, 255, (2009), 5999-6006. [26] J. Muller, J. Nowoczin, and H. Schmitt, Thin Solid Films, 496, (2006), 364-370. [27] Y. C. Lin, J. H. Ke, W. T. Yen, S. C. Liang, C. H. Wu, and C. T. Chiang, Applied Surface Science, 257, (2011), 4278-4284. [29] F. A. Chowdhury, J. Begum, L. Quadir, and S. M. F. Hasan, Journal of Bangladesh Academy of Sciences, 33, (2009), 151-157. [30] W. T. Kim, S. R. Hahn, H. M. Jeong, and C. S. Yun, Journal of Applied Physics, 58, (1985), 4594-4597. [31] G. H. Chandra, O. M. Hussain, S. Uthanna, and B. S. Naidu, Materials Letters, 53, (2002), 216–220. [32] G. H. Chandra, O. M. Hussain, S. Uthanna, and B. S. Naidu, Vacuum, 62, (2001), 39-45. [33] J. C. Mikkelsen, Materials Research Bulletin, 12, (1977), 497-502. [34] E. Calderon, B. Fernandez, L. Duran, P. Grima, M. Morocoima, E. Quintero, C. Rincon, and M. Quintero, Physica B, (2009), 4095-4099. [35] Y. Cui, U. N. Roy, A. Burger, and J. T. Goldstein, Journal of Applied Physics, 103, (2008) 123514-123519. [36] U. N. Roy, Y. Cui, R. Hawrami, A. Burger, L. Orona, and J. T. Goldstein, Solid State Communications, 139, (2006), 527–530. [37] G. W. Iseler, Journal of Crystal Growth, 41, (1977), 146-150. [38] B. J. Zhao, S. F. Zhu, S. S. Fu, Q. F. Li, Y. R. Jin, and Z. H. Li, Materials Research Bulletin, 35, (2000), 1525–1532. [39] A. Kinoshita, H. Matsuo, K. Yoshino, T. Ikari, and K. Kakimoto, Physica Status Solidi, 3, (2006), 2903-2906. [40] Y. Cui, U. N. Roy, P. Bhattacharya, A. Parker, A. Burger, and J. T. Goldstein, Solid State Communications, 150, (2010), 1686-1689. [41] P. G. Schunemann, S. D. Setzler, and T. M. Pollak, Journal of Crystal Growth, 211, (2000), 257-264. [42] K. Yoshino, H. Komaki, K. Itani, S. F. Chichibu, Y. Akaki, and T. Ikari, Journal of Crystal Growth, 236, (2002), 257–260. [43] S. Wan, S. Zhu, B. Zhao, B. Chen, Z. He, and J. Xu, Journal of Crystal Growth, 318, (2011), 713–716. [44] G. D. Zhao, S. F. Zhu, B. J. Zhao., B. Chen, Z. He, and S. Wan, Journal of Crystal Growth, 311, (2009), 368-372. [45] C. H. Lee, C. H. Wu, C. H. Lu, Journal of the American Ceramic Society, 93, (2010), 1879-1883. [46] C. H. Lu, C. H. Lee, C. H. Wu, Solar Energy Materials and Solar Cells, 94, (2010), 1622-1626. [47] C. H. Wu, F. S. Chen, S. H. Lin, C.H. Lu, Journal of Alloys and Compounds, 509, (2011), 5783-5788. [48] S. H. Liu, F. S. Chen, C. H. Lu, Chemistry Letters, 39, (2010), 1333-1335. [49] V. K. Kapur, A. Bansal, P. Le, O. Asensio, and N. Shigeoka, Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, (2003), 465-468. [50] M. Kaelin, D. Rudmann, and A. N. Tiwari, Solar Energy, 77, (2004), 749–756. [51] D. P. Butt, Y. Park, and T. N. Taylor, Journal of Nuclear Materials, 264, (1999), 71-77. [52] A.Safir, M. M. Yazdanpanah, S. Pabba, S. D. Cambron, F. P. Zamborini, R. S. Keynton, and R. W. Cohn, 6th IEEE Conference on Nanotechnology, 2, (2006), 898-900. [53] I. D. Olekseyuk, G.P. Gorgut, and O. V. Parasyuk, Journal of Alloys and Compounds, 260, (1997), 111-120. [54] J. C. Mikkelsen, Materials Research Bulletin, 12, (1977), 497-502. [55] B. Zhao, S. Zhu, Y. Li, F. Yu, Q. Li, Z. Li, X. Zhu, S. Shao, and J. Lin, Opt. Eng., 38, (1999), 2129-2133. [56] J. J. M. Binsma, L. J. Giling, and J. Bloem, Physica Status Solidi (a), 63, (1981), 595-603. [57] P. Kistaiah, Y. C. Venudhar, K. S. Murthy, L. Iyengar, and K. V. K. Rao, Journal of the Less-Common Metals, 77, (1981), 17–19. [58] M. R. A. Bhuiyan, M. K. Rahman, and S. M. F. Hasan, Journal of Physics D: Applied Physics, 41, (2008), 235108-235113. [59] Y. S. Murthy, B.S. Naidu, and P. J. Reddy, Materials Science and Engineering, B8, (1991), 175-179. [60] M. R. A. Bhuiyan, S. M. F. Hasan, Journal of Physics D: Applied Physics, 39, (2006), 4935-4939. [61] H. Matsushita, S. Endo, and T. Irie, Japanese Journal of Applied Physics, 31, (1992), 18-22. [62] F. Kirchhoff, J. M. Holender, and M. J. Gillan, Phys. Rev. B., 54, (1996), 190-202. [63] G. S. C. Abrahams, J. L. Bernstein, Journal of Chemical Physics, 59, (1973), 5415–5422. [64] I. V. Bodnar, I. A. Victorov, and S. L. Sergeev-Nekrasov, Crystal Research and Technology, 33, (1998), 885–890. [65] I. V. Bodnar, Inorganic Materials, 40, (2004), 1049-1053. [66] Y. Jin, K. Tang, C. An, L. Huang, Journal of Crystal Growth, 253, (2003), 429-434. [67] Y. Cui, U. N. Roy, P. Bhattacharya, A. Parker, A. Burger, J. T. Goldstein, Solid State Communications, 150, (2010), 1686-1689. [68] B. Grzeta-Plenkovic, S. Popovic, B. Celustka and B. Santic, Journal of Applied Crystallography, 13, (1980), 311-315. [69] B. D. Cullity, S. R. Stock, Elements of X-ray diffraction, third edition, Printice Hall, New Jersey, (2001), 630-631. [70] C. H. Lu, W. H. Wu, R. B. Kale, Journal of Hazardous Materials, 147, (2007), 213-218. [71] C. H. Lu, H. C. Wang, Journal of The Electrochemical Society, 152, (2005), 341-347. [72] D. K. Suri, K. C. Nagpal, and G. K. Chadha, Journal of Applied Crystallography, 22, (1989), 578-583. [73] D. Abou-Ras, R. Caballero, C. A. Kaufmann, M. Nichterwitz, K. Sakurai, S. Schorr, T. Unold, and H. W. Schock, Phys Stat Solidi, 2, (2008), 135-137. [74] D. Pathak, R. K. Bedi, and D. Kaur, Journal of Applied Physics, A95, (2009), 843-847. [75] H. Karaagac, M. Kaleli, and M. Parlak, Journal of Physics D: Applied Physics, 42, (2009), 165413-165419. [76] I. V. Bodnar, Semiconductors, 42, (2008), 156-158. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23837 | - |
dc.description.abstract | 本研究第一部分透過溶膠-凝膠法製備前驅物後,利用硒化程序成功製備出硒化銀鎵(AgGaSe2)化合物粉體。當改變前驅物中鎵離子與銀離子的濃度比例時,可以製備出單相AgGaSe2粉體。為了探討硒化製程對於粉體晶相的影響,研究中採用兩種硒化方式進行硒化。當前驅物混合硒粉時,硒化後可得到單相AgGaSe2。然而僅以硒蒸氣作為硒源進行合成時,所製備的粉體為AgGaSe2與Ag9GaSe6共存相。並依據拉曼光譜與Rietveld分析的結果,可確定製備的AgGaSe2粉體為屬於黃銅礦結構。根據快速退火實驗結果推論出AgGaSe2粉體反應機制為三步反應。而液態硒可以促進前驅物中銀與硒進行反應,幫助合成單相AgGaSe2。
第二部分以溶膠-凝膠法製備前驅物粉體,並進行硒化以製備銀銦鎵硒(AgIn1-xGaxSe2)化合物粉體。透過改變前驅物中鎵離子含量,可以成功調控材料的晶體結構。當前驅物中鎵離子含量增加時,粉體的晶格常數與粒徑會隨之降低。而將前驅物與硒粉、分散劑混合,製備出水系漿料。並利用塗佈後硒化製程,在還原氣氛下成功製備單相銀銦鎵硒薄膜。在調整前驅物薄膜中鎵離子含量下,可成功製備不同能隙值之銀銦鎵硒薄膜。 | zh_TW |
dc.description.abstract | In this study, the sol-gel method followed by the selenization process was developed to synthesize AgGaSe2 powders. The molar ratios of gallium ions to silver ions were controlled to prepare pure AgGaSe2 powders. Two kinds of selenization processes were employed in this study for investigating the formed phases of the obtained powders. As the sol-gel derived precursors were mixed with the Se powders, pure phase AgGaSe2 powders were successfully prepared. When the precursors without mixing Se powders were selenized using selenium vapor, AgGaSe2 coexisted with the impurity-Ag9GaSe6. The reaction mechanism was proposed as a three-step reaction. Based on the results, the selenium liquid in the selenization process promotes the reaction of Ag and Se when the precursors were mixed with selenium powders.
In the second part of the study, pure phase of AgIn1-xGaxSe2 powders were successfully prepared by selenizing the mixture of sol-gel derived precursors and Se powders. Lattice parameters and grain sizes were decreased with increasing the gallium-ion contents of the prepared powders. The pastes containing the sol-gel derived precursors and Se powders were used to prepare the precursor films, followed by the selenization process. Single phase of AgIn1-xGaxSe2 films were prepared without using selenium vapor. As the molar ratios of gallium ions to IIIA ions were elevated, the band gap energy of the obtained films were nonlinearly increased. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T05:10:50Z (GMT). No. of bitstreams: 1 ntu-100-R98524006-1.pdf: 2358293 bytes, checksum: 546a9d683de690860a215b68d549b6ab (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 論文摘要 I
Abstract II 目錄 III 圖目錄 V 表目錄 VIII 第一章 緒論 1 1.1 前言 1 1.2 太陽電池的發展 2 1.3 太陽電池相關原理 3 1.3.1 太陽光譜與照度 3 1.3.2 太陽電池操作原理 4 1.3.3 太陽電池之電路模型 5 1.3.4 太陽電池的效率 7 1.4 太陽電池的材料與種類 7 1.5 薄膜太陽電池 8 1.6 銅銦鎵硒太陽電池 8 1.6.1 銅銦鎵硒太陽電池發展 8 1.6.2 銅銦鎵硒太陽電池結構 9 1.6.3 銅銦鎵硒太陽電池之真空製程 10 1.6.4 銅銦鎵硒太陽電池之非真空製程 11 1.6.5 疊層銅銦鎵硒太陽電池 12 1.7 銀鎵硒與銀銦鎵硒太陽電池 13 1.7.1 銀鎵硒與銀銦鎵硒材料特性 13 1.7.2 銀鎵硒與銀銦鎵硒太陽電池之研究 14 1.7.3 銀鎵硒與銀銦鎵硒薄膜製備方法 15 1.7.4 銀鎵硒與銀銦鎵硒粉體製備方法 16 1.8 研究動機 18 第二章 溶膠-凝膠法製備銀鎵硒粉體與特性分析 25 2.1 實驗方法 25 2.1.1 溶膠-凝膠法製備銀鎵硒粉體 25 2.1.2 銀鎵硒粉體之特性分析 26 2.2 結果與討論 27 2.2.1 前驅物組成變化對AgGaSe2結晶結構與型態之效應 27 2.2.2 AgGaSe2之形成機制 31 2.2.3 AgGaSe2之粉體型態 33 第三章 溶膠-凝膠法製備銀銦鎵硒粉體及薄膜 46 3.1 實驗方法 46 3.1.1 溶膠-凝膠法製備銀銦鎵硒粉體 46 3.1.2 溶膠-凝膠法製備銀銦鎵硒薄膜 47 3.1.3 銀銦鎵硒粉體與薄膜之特性分析 47 3.2 結果與討論 49 3.2.1 前驅物組成變化對AgIn1-xGaxSe2粉體結晶結構之影響 49 3.2.2 AgIn1-xGaxSe2粉體之特性測定 50 3.2.3 前驅物組成變化對AgIn1-xGaxSe2薄膜結晶結構之影響 51 3.2.4 AgIn1-xGaxSe2薄膜之特性測定 53 第四章 結論 67 第五章 參考文獻 69 | |
dc.language.iso | zh-TW | |
dc.title | 銀銦鎵硒太陽電池吸收層材料之製備與特性分析 | zh_TW |
dc.title | Preparation and Characterization of Silver Indium Gallium Diselenide as the Absorber in Thin-film Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 彭治偉,溫政彥 | |
dc.subject.keyword | 銀鎵硒,銀銦鎵硒,薄膜太陽電池,溶膠凝膠, | zh_TW |
dc.subject.keyword | AgGaSe2,Ag(In,Ga)Se2,thin-film solar cell,sol-gel, | en |
dc.relation.page | 74 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2011-07-08 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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