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標題: | 氣態源分子束磊晶成長銻砷化鎵/砷化鎵量子井之模型 Growth Model of GaAsSb/GaAs Quantum Well by Using Gas Source Molecular Beam Epitaxy |
作者: | Jian-Ming Lin 林健銘 |
指導教授: | 王維新 |
關鍵字: | 分子束磊晶,銻砷化鎵,熱動態學模型,動力學模型,嵌入行為, Molecular beam epitaxy,GaAsSb,thermodynamic model,kinetic model,incorporation behavior, |
出版年 : | 2011 |
學位: | 博士 |
摘要: | 本論文使用氣態源分子束磊晶系統於砷化鎵基板上成長各種不同基板溫度及成分的銻砷化鎵/砷化鎵多層量子井結構。由X-ray的量測結果中,發現銻原子在量子井中的成分會受到砷原子的影響,顯示了銻與砷不同的嵌入行為。成長的量子井皆具有良好的光激螢光強度,且放光波長可達到1.327μm(0.934eV),證實了其應用在1.3μm 波段的可行性,並於光激螢光譜的分析中,看到銻砷化鎵/砷化鎵異質結構其第二型量子井之藍位移現象。
為幫助實驗者預測磊晶成長的成分結果,應用熱動態學理論,提出一個成長模型,並探討其與實驗值的適用性。而後為了更準確的描述成長過程,並加入五族元素的逸出效應,首先將動力學理論與熱動態學理論作結合,以得到一個合理的磊晶成長模型。 對利用兩個理論所結合的磊晶成長模型,探討其模擬曲線,可發現五族元素因彼此間的競爭力不同而會有相異的鍵結行為,使得五族元素的成分變化不同。而模型中唯一的未知參數,也可發現其與基板溫度間的線性關係,此性質有助於未知參數數值的訂定。 In this study, gas source molecular beam Epitaxy(GSMBE)was used to grow GaAsSb/GaAs multiple quantum wells with different compositions at various substrate temperatures. In the X-ray measurements, it was found that the Sb content in quantum well is varied with the As atom and reveals different incorporation behaviors. Strong photoluminescence intensity was observed in the grown quantum wells. The maximum wavelength for the sample is about 1.327μm(0.934eV), which gives an evidence of application for 1.3μm band range. Moreover, blue shift in the type-II GaAsSb/GaAs quantum well was found. To predict the results of epitaxy, a growth model is proposed by using the thermodynamic model. For a more accurate growth model for epitaxy, it is necessary to consider the desorption of two Group V elements, a combination of kinetic model and thermodynamic model is then proposed. For the calculation of the combined theoretical model, it is found the competition between two Group V atoms resulting in different incorporation behaviors and composition curves. The only fitting parameter is also found linearly proportional to the substrate temperature. And the relation is useful for the prediction of the unknown variable. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23650 |
全文授權: | 未授權 |
顯示於系所單位: | 電子工程學研究所 |
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