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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳中平(Chung-Ping Chen) | |
dc.contributor.author | Yueh-Hsun Lin | en |
dc.contributor.author | 林岳勳 | zh_TW |
dc.date.accessioned | 2021-06-08T05:04:44Z | - |
dc.date.copyright | 2011-02-09 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-01-25 | |
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IEEE ISCAS’06, Island of Kos, Greece, May 21–24, vol. 1, pp. 4 [35] Z. Li, R. Quintal, K. K. O, “A dual-band CMOS front-end with two gain modes for wireless LAN applications,” IEEE J. Solid-State Circuits, vol. 39, no. 11, pp. 2069-2073, Nov. 2004. [36] T. K. K. Tsang and M. N. El-Gamal, “Dual-band sub-1 V CMOS LNA for 802.11a/b WLAN applications,” IEEE International Symp. on Circuits and Systems, 2003, vol. 1, pp. 217-220. [37] Dao, V. K., Choi, B. G., and Park, C. S., “A Dual-band CMOS RF Front-end for 2.4/5.2GHz applications”, IEEE Radio and Wireless Symposium, 2007. [38] V. Vidojkovic, J. van der Tang, E. Hanssen, A. Leeuwenburgh. and A. van Roermund, “Fully-integrated DECT/Bluetooth multi-band LNA in 0.18μm CMOS,” IEEE International Symp. on Circuits and Systems, 2004, vol. 1, pp. I-565-I-568. [39] L.-H. Lu, H.-H. Hsieh, and Y.-S. Wang, “A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier,” IEEE Microwave and Wireless Components Letters, vol. 15, no. 10, pp. 685-687, October 2005. [40] J. Borremans, P. Wambacq, G. Van der Plas, Y. Rolain1, M. Kuijk, “A Switchable Low-Area 2.4-and-5 GHz Dual-Band LNA in Digital CMOS,” IEEE ESSCIRC, 2007. [41] D. K. Shaeffer and T. H. Lee, “A 1.5-V, 1.5-GHz CMOS low noise amplifier,” IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 745–759, May 1997. [42] Aaron V. Do, Chirn Chye Boon, Manh Anh Do, Kiat Seng Yeo, and Alper Cabuk, “A Subthreshold Low-Noise Amplifier Optimized for Ultra-Low-Power Applications in the ISM Band,” IEEE Transactions on Microwave Theory and Techniques, vol. 56, no. 10, pp. 2173-2179, October 2008. [43] T.-K. Nguyen et al., “CMOS low-noise amplifier design optimization techniques,” IEEE Trans. Microw. Theory Tech., vol. 52, no. 5, pp. 1433–1442, May 2004. [44] J. Lu and F. Huang, “Comments on ‘CMOS low-noise amplifier design optimization techniques’,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 7, pp. 3155–3155, Jul. 2006. [45] Chyuen-Wei Ang, Yuanjin Zheng, Chun-Huat Heng, “A Multi-band CMOS Low Noise Amplifier for Multi-standard Wireless Receivers,” Proc. IEEE Int. Circuits Syst. Symp. , May 2007, pp. 2802–2805. [46] V. K. Dao, Q. D. Bui, and C. S. Park, “A multi-band 900 MHz/1.8 GHz/5.2 GHz LNA for reconfigurable radio,” in IEEE RFIC Symp.Dig., 2007, pp. 69–72. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23614 | - |
dc.description.abstract | 近年來,隨著人們依賴通訊系統的程度提高,使得通訊速度以及製作成本成為很重要的課題。所以,我們期待多頻操作來增進通訊效率,以及多頻整合的硬體來降低製作成本。然而,目前金氧半場效電晶體的特性,依然受制於許多製程上先天的缺陷,像是寄生效應。因此,金氧半導體電路設計,仍是一深具挑戰的研究課題。
本篇論文,為達到多頻操作,及節省面積的目的,提出了一系列創新的電路架構。在第三章中,利用共用電感的概念,提出一個節省面積的雙頻傳送/接收開關。在第四章中,藉由切換匹配方法的技巧,可使雙頻低雜訊放大器在節省面積的情況下,雜訊指數獲得改善。 | zh_TW |
dc.description.abstract | Recently, with raises of communication system demand, communication speed and production cost turn out to be vital issues. As a result, multi-band operation to enhance the communication efficiency and multi-band combination to lower the production costs are expected. Unfortunately, the development of CMOS circuits has been long impeded by inherent shortcomings such as parasitic components. It is still a challenging task for designers to realize CMOS circuits near the transistor cutoff frequency.
In this thesis, to operate in multi-band in an effective chip area, novel circuit topologies are developed for dual-band operations. In Chapter 3, an inductor-reconfiguration technique is introduced to the dual-band T/R switch, thus the single inductor can be reused in the transmitting and receiving modes. In Chapter 4, by switching the matching circuit, the noise figure of the dual-band LNA can be improved in a small chip area. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T05:04:44Z (GMT). No. of bitstreams: 1 ntu-100-R95943104-1.pdf: 951049 bytes, checksum: 982027968ba3db98f92fce128265a979 (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | Acknowledgement i
Abstract iii Table of Contents vii List of Figures xi List of Tables xv Chapter 1 Introduction 1 1.1 Multi-Band Communication Systems 1 1.2 Motivation 5 1.3 Organization of this Thesis 6 Chapter 2 Background 9 2.1 Scattering Parameters 9 2.2 Noise 12 2.2.1 Classical Two-Port Noise Theory 12 2.2.2 Intrinsic MOSFET Two-Port Noise Parameters 14 2.2.3 Noise Temperature 16 2.2.4 Y-factor 17 2.2.5 Noise Figure Measurement 18 Chapter 3 A Compact 2.4/5.2-GHz CMOS Dual-Band T/R Switch 23 3.1 Introduction 23 3.2 Background 25 3.3 The Conventional Series-Shunt T/R Switch Topology 29 3.4 The Proposed Topology of The Dual-Band T/R Switch 36 3.5 Circuit Implementation 43 3.6 Experimental Results 44 3.7 Summary 48 Chapter 4 A Compact Matching Technique For Dual-Band CMOS Low-Noise Amplifier 51 4.1 Introduction 51 4.2 Background 53 4.2.1 The Conventional Cascode LNA 53 4.2.2 The Existing Dual-Band LNAs 57 4.3 Input Matching With The Shunt-Inductor 58 4.4 The Inductor-Reconfiguration Technique 60 4.5 The Proposed Topology of The Dual-Band LNA 65 4.6 Circuit Implementation 70 4.7 Experimental Results 71 4.8 Summary 73 Chapter 5 Conclusion 77 Bibliography 81 | |
dc.language.iso | en | |
dc.title | 緊密之雙頻傳送/接收開關與低雜訊放大器設計與實作 | zh_TW |
dc.title | Design and Implementation of the Compact Dual-Band T/R Switch and Low-Noise Amplifier | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 曹恆偉(Hen-Wai Tsao),盧信嘉(Hsin-Chia Lu) | |
dc.subject.keyword | 接收器,無線,前端電路,傳送/接收開關,低雜訊放大器,緊密,雙頻, | zh_TW |
dc.subject.keyword | receiver,wireless,front-end,T/R switch,LNA,compact,dual-band, | en |
dc.relation.page | 86 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2011-01-25 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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