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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林恭如(Gong-Ru Lin) | |
dc.contributor.author | Yu-Chung Lien | en |
dc.contributor.author | 連佑中 | zh_TW |
dc.date.accessioned | 2021-06-08T04:50:49Z | - |
dc.date.copyright | 2009-07-31 | |
dc.date.issued | 2009 | |
dc.date.submitted | 2009-07-27 | |
dc.identifier.citation | REFERENCE
Chapter 1 [1.1] J. Takahashi, T. Tsuchizawa, T. Watanabe, and S. Itabashi, “Oxidationinduced improvement in the sidewall morphology and cross-sectional profile of silicon wire waveguides,” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 22, pp. 2522–2525 (2004). [1.2] T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonic devices based on silicon microfabrication technology,” IEEE J. Sel. Topics Quantum Electron., vol. 11, pp. 232–240 (2005). [1.3] S. McNab, N. Moll, and Y. Vlasov, “Ultra-low loss photonic integrated circuit with membrane-type photonic crystal waveguides,” Opt. Express, vol. 11, pp. 2927–2939 (2003). [1.4] V. R. Almeida, R. R. Panepucci, and M. Lipson, “Nano-taper for compact mode conversion,” Opt. Lett., vol. 28, pp. 1302–1304 (2003). [1.5] C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro, vol. 26, pp. 58–66 (2006). [1.6] D. Taillaert, W. Bogaerts, P. Bienstman, T. F. Krauss, P. Van Daele, I. Moerman, S. Verstuyft, K. De Mesel, and R. Baets, “An out-of-plane grating coupler for efficient butt-coupling between compact planar waveguides and single-mode fibers,” IEEE J. Quantum Electron., vol. 38, pp. 949–955 (2002). [1.7] D. Wood, Optoelectronic Semiconductor Devices. Trowbridge, U.K.: Prentice-Hall, pp. 250 (1994). [1.8] H. Temkin, J. C. Bean, T. P. Pearsall, N. A. Olsson, and D. V. Lang, “High photoconductive gain in GexSi1−x/Si strained-layer superlattice detectors operating at 1.3 μm,” Appl. Phys. Lett., vol. 49, pp. 155–157 (1986). [1.9] B. Jalali, A. F. J. Levi, F. Ross, and E. A. Fitzgerald, “SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition,” Electron. Lett., vol. 28, pp. 269–271 (1992). [1.10] B. Jalali, A. F. J. Levi, F. Ross, and E. A. Fitzgerald, “SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition,” Electron. Lett., vol. 28, pp. 269–271 (1992). [1.11] F. Y. Huang, K. Sakamoto, K. L.Wang, P. Trinh, and B. Jalali, “Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3–1.55-μm wavelength range,” IEEE Photon. Technol. Lett., vol. 9, pp. 229–231 (1997). [1.12] J. Ruan, P. M. Fauchet, L. Dal Negro, M. Cazzanelli, and L. Pavesi, “Stimulated emission in nanocrystalline silicon superlattices,” Appl. Phys. Lett., vol. 83, pp. 5479–5481 (2003). [1.13] R. J.Walters, G. I. Bourianoff, and A. Atwater, “Field-effect electroluminescence in silicon nanocrystals,” Nat. Mater., vol. 4, pp. 143–146 (2005). [1.14] J. H. Shin, J. Lee, H. S. Han, J. H. Jhe, J. S. Chang, S. Y. Seo, H. Lee, and N. Park, 'Si nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs,' IEEE J. Sel. Top. Quantum Electron, vol. 12, pp. 783-796, (2006). Chapter 2 [2.1.1] J. J. Welser, S. Tiwari, S. Rishton, K. Y. Lee, and Y. Lee, “Room Temperature Operation of a Quantum-Dot Flash Memory,” IEEE Electron. Dev. Lett., vol. 18, pp. 278-280 (1997). [2.1.2] L. Pavesi, L. D. Negro, C. Mazzoleni, G. Franzo, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature, vol. 408, pp. 440-444 (2000). [2.1.3] L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburroa, L. Pavesi, F. Priolo, D. Pacifici, G. Franzò, and F. Iacona, “Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals,” Physica E, vol. 16, pp. 297-308 (2003). [2.1.4] P. Mishra, and K. P. Jain, “Raman, photoluminescence and optical absorption studies on nanocrystalline silicon,” Mater. Sci. Eng. B, vol. 95, pp. 202-213 (2002). [2.1.5] H. I. Hanafi, S. Tiwari, and I. Khan, “Fast and long retention-time nano-crystal memory,” IEEE Trans. Electron Dev., vol. 43, pp. 1553-1558 (1996). [2.1.6] G.-R. Lin, C. J. Lin, and C. K. Lin, “Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids,” Opt. Express, vol. 15, pp. 2555-2563 (2007). [2.1.7] K. S. Zhuravlev and A. Y. Kobitsky, “Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide,” Semiconductors, vol. 34, pp. 1203-1206 (2000). [2.1.8] A. Irrena, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, “Excitation and de-excitation properties of silicon quantum dots under electrical pumping,” Appl. Phys. Lett., vol. 81, pp. 1866-1868 (2002). [2.1.9] C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B, vol. 48, pp.11024-11036 (1993). [2.1.10] G. C. John and V. A. Singh, “Model for the the photoluminescence behavior of porous silicon,” Phys. Rev. B, vol. 54, pp.4416-4419 (1996). [2.1.11] H. Berthlot, Ann. Chem. Phys., vol. 66, pp. 110 (1962). [2.1.12] D. Babic and R. Tsu, “Excitons in silicon nanocrystallites,” Superlattices Microstruct., vol. 22, pp. 581-588 (1997). [2.1.13] D. R. Penn, “Wave-Number-Dependent Dielectric Function of Semiconductors,” Phys. Rev., vol. 128, pp. 2093-2097 (1962). [2.1.14] R. Tsu, D. Babic, and L, Ioriatti, “Simple model for the dielectric constant of nanoscale silicon particle,” J. Appl. Phys., vol. 82, pp. 1327-1329 (1997). [2.1.15] S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, and E. F. Crabbe, “A silicon nanocrystals based memory,” Appl. Phys. Lett., vol. 68, pp. 1377-1379 (1996). [2.1.16] N. M. Park, S. H. Jeon, H. D. Yang, H. Hwang, and S. J. Park, “Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride,” Appl. Phys. Lett., vol. 83, pp. 1014-1016 (2003). [2.1.17] O. Winkler, F. Merget, M. Heuser, B. Hadam, M. Baus, B. Spangenberg, and H. Kurz, “Concept of floating-dot memory transistors on silicon-on-insulator substrate,” Microelectron. Eng., vol. 61, pp. 497-503 (2002). [2.1.18] J. K. Kim, H. J. Cheong, Y. Kim, J. Y. Yi, and H. J. Park, “Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals,” Appl. Phys. Lett., vol. 82, pp. 2527-2529 (2003). [2.1.19] C. Sargentis, K. Giannakopouloa, A. Travlos, and D. Tsamakis, “Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer,” Sur. Sci. vol. 601, pp. 2859-2863 (2007). [2.2.1] L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett., vol. 57, pp. 1046-1048 (1990). [2.2.2] A. Perez-Rodriguez, O. Gonzalez-Varona, B. Garrido, P. Pellegrino, J. R. Morante, C. Bonafos, M. Carrada and A. Claverie, J. Appl. Phys., vol. 94, pp. 254-262 (2003). [2.2.3] D. Pacifici, E. C. Moreira, G. Franzo, V. Martorino and F. Priolo, “Defect production and annealing in ion-irradiated Si nanocrystals,” Phys. Rev. B, vol. 65, pp. 144109 (2002). [2.2.4] J. J. Welser, S. Tiwari, S. Rishton, K. Y. Lee, Y. Lee, “Room Temperature Operation of a Quantum-Dot Flash Memory,” IEEE Electron. Dev. Lett., vol. 18, pp. 278-280 (1997). [2.2.5] H. I. Hanafi, S. Tiwari, and I. Khan, “Fast and Long Retention-Time Nano-Crystal Memory,” IEEE Trans. Electron Dev., vol. 43, pp. 1553-1558 (1996). [2.2.6] B. Delley, E. F. Steigmeier, “Quantum confinement in Si nanocrystals,” Phys. Rev. B, vol. 47, pp. 1397-1400 (1993). [2.2.7] L. N. Dinh, L. L. Chase, M. Balooch, W. J. Siekhaus, F. Wooten, “Optical properties of passivated Si nanocrystals and SiOx nanostructures,” Phys. Rev. B., vol. 54, pp. 5029-5036 (1996). [2.2.8] M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, C. Delerue, “Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen,” Phys. Rev. Lett., vol. 82, pp. 197-200 (1999). [2.2.9] K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki, “Room-Temperature Single-Electron Memory,” IEEE Trans. Electron Devices, vol. 41, pp. 1628-1638 (1994). [2.2.10] L. Guo, E. Leobandung and S. Y. Chou, “A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel,” Appl. Phys. Lett., vol. 70, pp. 850-852 (1997). [2.2.11] A. Chin C. S. Liang, C. Y. Lin, C. C. Wu, and J. Liu, “Strong and Efficient Light Emission in ITO/Al2O3 Superlattice Tunnel Diode,” International Electron Devices Meeting (IEDM) Tech. Dig., pp. 171-174 (2001). [2.2.12] G. Chakraborty, S. Chattopadhyay, and C. K. Sarkar, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys., vol. 101, pp. 024315 (2007). [2.2.13] G.-R. Lin, C. J. Lin, and C. K. Lin, “Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nanopyramids,” Opt. Express, vol. 15, pp. 2555-2563 (2007). [2.2.14] R. Tohmon, Y. Shimogaichi, H. Mizuno and Y. Ohki, “2.7-eV Luminescence in As-Manufactured High-Purity Silica Glass,” Physical Review Letters, vol. 62, pp. 1388-1391 (1989). [2.2.15] H. Nishikawa, R. E. Stahlbush, and J. H. Stathis, “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy” Phys. Rev. B, vol. 60, pp. 15910-15918 (1999). [2.2.16] N. M. Ravindra and J. Zhao, “Fowler-Nordheim tunneling in thin SiO2 films,” Smart Mater. Struct., vol. 1, pp. 197-201 (1992). [2.2.17] Y. Zhenrui, A.-M. Mariano and A. I. C. Marco, “Single electron charging and transport in silicon rich oxide,” Nanotechnology, vol. 17, pp. 3962-3967 (2006). [2.2.18] Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto, “Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes,” Jpn. J. Appl. Phys., vol. 38, pp. 425-428 (1999). [2.2.19] S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe´, and K. Chan, “A silicon nanocrystals based memory,” Appl. Phys. Lett., vol. 68, pp. 1377-1379 (1996). [2.2.20] D. J. Lockwood, Z. H. Lu, and J.-M. Baribeau, “Quantum Confined Luminescence in Si/SiO2 Superlattices,” Phys. Rev. Lett., vol. 76, pp. 539-541 (1996) [2.2.21] C. H. Lai, A. Chin, K. C. Chiang, W. J. Yoo, C. F. Cheng, S. P. McAlister, C. C. Chi and P. Wu, “Novel SiO2/AlN/HfAlO/IrO2 Memory with Fast Erase, Large DVth and Good Retention,” Symp. on VLSI Tech. Dig., pp. 210-211 (2005). [2.2.22] B. Park, S. Choia, H.-R. Lee, K. Choa, S. Kima, “Memory characteristics of MOS capacitors with Ge nanocrystal-embedded Al2O3 gate layers,” Solid State Commun., vol. 143, pp. 550-552 (2007). [2.2.23] J. K. Kim, H. J. Cheong, Y. Kim, J. Y. Yi, H. J. Park, “Rapid-thermal-annealing effect on lateral charge loss in metal-oxide-semiconductor capacitors with Ge nanocrystals,”Appl. Phys. Lett., vol. 82, pp. 2527-2529 (2003). [2.2.24] M. Porti, M. Avidano, M. Nafría, and X. Aymerich, “Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices,” J. Appl. Phys., vol. 101, pp.064509 (2007). [2.2.25] O. Winkler, F. Merget, M. Heuser, B. Hadam, M. Baus, B. Spangenberg, and H. Kurz, “Concept of floating-dot memory transistors on silicon-on-insulator substrate,” Microelectron. Eng., vol. 61, pp. 497-503 (2002). Chapter 3 [3.1] F. Koch, V. Petrova-Koch, T. Muschik, “The luminescence of porous Si: the case for the surface state mechanism,” J. Lumin., vol. 57, pp. 271-281 (1993). [3.2] S. M. Prokes, “Light emission in thermally oxidized porous silicon: Evidence for oxide-related luminescence,” Appl. Phys. Lett.,vol. 62, pp. 3244-3246 (1993). [3.3] B. Delley, E. F. Steigmeier, “Quantum confinement in Si nanocrystals,” Phys. Rev. B, vol. 47, pp. 1397-1400 (1993). [3.4] L. N. Dinh, L. L. Chase, M. Balooch, W. J. Siekhaus, F. Wooten, “Optical properties of passivated Si nanocrystals and SiOx nanostructures,” Phys. Rev. B, vol. 54, pp. 5029-5037 (1996). [3.5] M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, C. Delerue, “Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen,” Phys. Rev. Lett., vol. 82, pp. 197-200 (1999). [3.6] J. Linnros and N. Lalic, “High quantum efficiency for a porous silicon light emitting diode under pulsed operation,” Appl. Phys. Lett., vol. 66, pp. 3048-3050 (1995). [3.7] J. S. de Sousa, J.-P. Leburton, V. N. Freire and E. F. da Silva, “Intraband absorption and Stark effect in silicon nanocrystals,” Phys. Rev. B, vol. 72, pp. 155438 (2005). [3.8] T. Gebel, L. Rebohle, J. Sun, W. Skorupa, A. N. Nazarov and I. Osiyuk, “Correlation of charge trapping and electroluminescence inhighly e%cient Si-based light emitters,” Physica E, vol. 16, pp. 499-504 (2003). [3.9] E. H. Snow, “Fowler-Nordheim Tunneling in SiO2 Films,” Solid state Commun., vol. 5, pp. 813-815 (1967). [3.10] M. Lenzlinger, and E. H. Snow, “Fowler-Nordheim Tunneling into Thermally Grown SiO2,” J. Appl. Phys., vol. 40, pp. 278-283 (1969). [3.11] Z. A. Weinberg, “On tunneling in metal-oxide-silicon structures,” J. Appl. Phys., vol. 53, pp. 5052-5056 (1982). [3.12] G. Chakraborty, S. Chattopadhyay, and C. K. Sarkar, “Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures,” J. Appl. Phys., vol. 101, pp. 024315 (2007). [3.13] D. Comedi, O. H. Y. Zalloum, J. Wojcik, and P. Mascher, “Light Emission From Hydrogenated and Unhydrogenated Si-Nanocrystal/Si Dioxide Composites Based on PECVD-Grown Si-Rich Si Oxide Films,” IEEE J. Sel. Top. Quantum Electron., vol. 12, pp. 1561-1569 (2006) [3.14] D. Comedi, O. H. Y. Zalloum, E. A. Irving, J. Wojcik, T. Roschuk, M. J. Flynn, and P. Mascher, “X-ray-diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides,” J. Appl. Phys., vol. 99, pp. 023518 (2006). [3.15] N. Lalic and J. Linnros, “Characterization of a porous silicon diode with efficient and tunable electroluminescence,” J. Appl. Phys., vol. 80, pp. 5971-5977 (1996). [3.16] A. Loni, A. J. Simons, T. I. Cox, P. D. J. Calcott, and L. T. Canham, “16% external quantum efficiency from planar microcavity LEDs at 940 nm by precise matching of cavity wavelength,” Electron. Lett., vol., 31, pp. 1286-1288 (1995) [3.17] K. Nishimura, Y. Nagao, and N. Ikeda, “High External Quantum Efficiency of Electroluminescence from Photoanodized Porous Silicon,” Jpn. J. Appl. Phys., Part 2, vol. 37, pp. L303-L305 (1998). [3.18] B. Gelloz and N. Koshida, “Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode,” J. Appl. Phys., vol. 88, pp. 4319-4324 (2000). [3.19] M. Kondo, M. Fukawa, L. Guo, and A. Matsuda, “High rate growth of microcrystalline silicon at low temperatures,” J. Non-Cryst. Solids, vol. 266–269, pp. 84-89 (2000). [3.20] B. Kalache, A. I. Kosarev, R. Vanderhaghen, and P. Roca i Cabarrocas, “Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties,” J. Appl. Phys., vol. 93, pp. 1262-1273 (2003). [3.21] J. U. Schmidt, B. Schmidt, “Investigation of Si nanocluster formation in sputter-deposited silicon sub-oxides for nanocluster memory structures,” Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., vol. 101, pp. 28-33 (2003). [3.22] C. J. Lin, C. K. Lee, E. W. G. Diau, and G. R. Lin, “Time-Resolved Photoluminescence Analysis of Multidose Si-Ion-Implanted SiO2,” J. Electrochem. Soc., vol. 153, pp. E25-E32 (2006). [3.23] J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B, vol. 175, pp. 490-494 (2001). [3.24] H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys., vol. 91, pp. 4078-4081 (2002). [3.25] H. Nishikawa, R. E. Stahlbush, and J. H. Stathis, “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy,” Phys. Rev. B, vol. 60, pp. 15910-15918 (1999). [3.26] T. A. Cleland, and D. W. Hess, “Diagnostics and Modeling of N2O RF Glow Discharges,” J. Electrochem. Soc., vol. 136, pp. 3103-3111 (1989). [3.27] S. H. Bauer and John A. Haberman, “A Laser Augmented Reaction: SF6+SiH4+S2*+SiF4+HF+H2 Retention of Isotopic Selectivity During Detonation,” IEEE J. Quantum Electron., vol. 14, pp. 233-237 (1978). [3.28] P.G. Pai, S.S. Chao, Y. Takagi, G. Lucovsky, “Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition,” J. Vac. Sci. Technol. A, vol. 4, pp. 689-694 (1986). [3.29] J. L. Yeh and S. C. Lee, “Structural and optical properties of amorphous silicon oxynitride,” J. Appl. Phys., vol. 79, pp. 656-663 (1996). [3.30] K. Haga and H. Watanabe, “Optical Properties of Plasma-Deposited Silicon-Oxygen Alloy Films,” Jpn. J. Appl. Phys., vol. 29, pp. 636-639 (1990). [3.31] C. A. Mead, “Electron Transport Mechanisms in Thin Insulating Films,” Phys. Rev., vol. 128, pp. 2088-2093 (1962). [3.32] S. Sze, “Current Transport and Maximum Dielectric Strength of Silicon Nitride Films,” J. Appl. Phy., vol. 38, pp. 2951-2956 (1967). [3.33] J. Chen, T. Lee, J. Su, W. Wang, and M. A. Reed, Encyclopedia of Nanoscience and Nanotechnology (American Scientific Publishers, Valencia, California, 2004), 5, 633 (2004). [3.34] C. Chang, PH.D.Thesis, Berkeley, (1984). [3.35] R. H. Fowler and L. Nordheim, Proc.Roy. Soc. London., 119, 173, (1928). [3.36] C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B, vol. 48, pp. 11024-11036 (1993). [3.37] A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, P.G. Fallica, “Electroluminescence properties oflight emitting devices based on silicon nanocrystals,” Phys. E, vol. 16, pp. 395-399 (2003). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23269 | - |
dc.description.abstract | 在本論文中,我們主要是利用電漿輔助化學氣相沉積技術法,藉由改變電漿的射頻功率等製程參數,調控富矽氧化矽薄膜層中之奈米矽晶顆粒大小,研究奈米矽晶尺寸與電荷儲存及發光效應的影響。
由變溫光激發光的圖譜,我們可以由峰值強度對溫度的關係圖的低溫區斜率萃取出自我補獲激子的能量,此激子為奈米矽晶所特有的現象,我們發現了自我捕獲激子能量與尺寸相依的介電係數呈倒數平方反比的關係。此外,我們亦推導出公式,證明了平能帶電壓位移與奈米矽體積呈正比。最後,電荷儲存在奈米矽晶的保留時間與奈米矽晶的體積呈反比,較大顆的奈米矽晶具有較好的儲存效應。 除了奈米矽晶尺寸對電荷儲存之影響,介面奈米錐有助於減少起使電壓,並且增加電致發光的功率;藉由延長每個梯度的停留秒數,我們觀察到奈米矽晶電流阻隔的現象,意謂儲存在奈米矽晶的電荷形成屏蔽電場,抑制其他電荷的儲存。由改變電容電壓磁滯曲線的電壓掃描範圍,我們觀察到奈米矽晶對於電子或電洞的儲存能力具有非對稱的現象。奈米矽晶對電洞具有較好的儲存現象也可以由電容保持時間得到驗證。 另外,我們藉由調變電漿輔助化學氣相沉積系統的射頻功率沉積不同組成氧矽比例的薄膜,經過高溫熱退火後集結成不同尺寸的奈米矽,由於量子侷限效應而形成多色彩奈米矽基發光二極體。由光激發光我們可以知道隨著射頻功率的提升,每奈米單位厚度的光激發光強度增加,譜型藍移的現象,可以知道鑲嵌在富矽氧化層中的奈米矽尺寸縮小,但是濃度提升。藉由傅立葉轉換吸收譜型,我們可以由非對稱的矽氧矽拉伸模態估計出退火前的氧矽比例,氧矽比低的薄膜在高溫退火的情形下,晶核成長/熟化現象為主要的機制,在較高的氧矽比的情況下,成核為主要的機制。此外,我們在射頻40及50瓦參數下成長的富矽奈米矽薄膜的光激發光頻譜與藉由矽離子佈值方式形成的富矽奈米矽薄膜的光激發光頻譜類似,它的發光機制由弱氧鍵結缺陷,中性氧空缺所貢獻。由傅立葉轉換吸收譜我們也可以觀察到這些缺陷在經過長時間退火後減少的現象。藉由F-N圖,我們可以知道載子在氧化層中的運輸是由F-N穿隧機制,計算出其位障高度由1.02增加到3.62 電子伏特。在長時間火退火之後,量測到最大的光輸出功率約為0.5毫微瓦。40及50瓦參數成長的元件其P-I斜率,能量轉換效率,內外部量子效率在經過長時間退火後都有劣化的現象,可能與長時間退火後發光缺陷的減少有關。最後,我們觀察到電激發光的頻譜與光激發光的頻譜及拍出來的照片波長相近。 | zh_TW |
dc.description.abstract | Temperature-dependent μ-PL of self-trapped exciton (STE) based radiation in Si nanocrystals (Si-ncs) with size enlarging from 2.3 to 4.5 nm is demonstrated, while the monotonically decreasing trend of the STE activation energy (from 1.75 to 1.2 meV) with Si-nc size dependent dielectric permittivity is elucidated by Bohr hydrogen-like atom model. Charge accumulation induced capacitance hysteresis accompanied with lengthened retention is observed when Si-nc size exceeds 2.3 nm. A modified flat-band voltage shift model corroborates the proportionality of the charge density with third power of Si-nc size, supporting that the Si-nc volume is more pronounced than Si-nc density for charge retention. The current blocking and charge accumulation effects of an ITO/Si-rich SiOx/p-Si MOS diode with buried Si nano-dots (Si-nds) and SiOx/Si interfacial Si nano-pyramids (Si-nps) are characterized. At the SiOx/p-Si interface, the area density of Si-nps is increasing from 1.3×109 to 1.6×1011 cm-2, which greatly decreases turn-on voltage of the MOS diode from 182 to 52 V, thus enhancing the electro-luminescent power from 17.5 to 50.4 nW. The current blocking phenomenon of such a MOS diode become serious with lengthening step-voltage delay, indicating that a significant charge accumulation associated with a strong screening field is generated within Si-rich SiOx layer. It was observed that the turn-on voltage with Si-nps evidently decreases to 31.6 V under reverse biased conditions for tunneling holes. Counter-clockwise C-V hysteresis analysis reveals a flat-band voltage shift of 8.5 V for electron and -12.9 V for hole, showing nonlinear function with either Si-nd size or Si-nd density. The C–t retention shows higher charge loss rate for electrons (7.6%) than for holes (1.5%) within 0.5 hr due to low SiOx/Si-nd barrier. The multicolor photo-emission of an ITO/Si-rich SiOx/p-Si MOS diode with buried Si-ncs were demonstrated. From PL analysis, the normalized PL intensity monotonically increases and the peak wavelength blue shifts, indicating the increment of Si-nc density and shrinkage of Si-nc size, respectively. This is attributed to cluster growth/ripening at lower composition ratio and nucleation at higher composition ratio by FTIR absorption analysis of Si-O-Si stretching mode. The PL spectra of 40 and 50 W grown sample also shows similar PL spectrum to Si implanted SiO2 (SiO2:Si+), which are mainly contributed by weak oxygen bonding defect, NOV defect. The FTIR also implies the reduction of radiative defect after long-term annealing. With F-N plot, the turn-on electric field from 2.6 to 9.2 MV/cm, and extract the barrier height from 1.02 to 3.62 eV were determined. The band diagram shows the energy band intrinsically bending more serious for larger Si-nc, indicating smaller external electric field to trigger F-N tunneling mechanism. The maximum optical power of 557.2 nW were observed during long-term annealing device. The EL spectra show similar spectra as PL, and the color of EL patterns are in agreement with their EL spectra. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T04:50:49Z (GMT). No. of bitstreams: 1 ntu-98-R96941078-1.pdf: 1016729 bytes, checksum: 8647c51c953f5fa11e14141737784863 (MD5) Previous issue date: 2009 | en |
dc.description.tableofcontents | CONTENTS
口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iv CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xii Chapter 1 Introduction 1 1.1 Versatile application of silicon photonics 1 1.2 Motivation 2 1.3 Organization of the Thesis 3 Chapter 2 Si Nanocrystal Based Metal-Oxide Semiconductor Memory Device 4 2.1 Self-trapped Exciton Energy Manipulation and Charge Retention of Si nanocrystals in SiOx Film 4 2.1.1 Introduction 4 2.1.2 Sample preparation and experimental setup 5 2.1.3 Results and Discussions 6 2.1.3.1 TEM Results 6 2.1.3.2 Temperature Dependent PL Analysis 6 2.1.3.3 Capacitance-Voltage Analysis 8 2.1.3.4 Retention Time Analysis 10 2.1.4 Summary 12 2.2 Si Nano-Dots and Interfacial Nano-Pyramids Dependent Electro-Luminescence and Charge Accumulation in ITO/SiOx/p-Si MOS Diode 13 2.2.1 Introduction 13 2.2.2 Sample preparation and experimental setup 14 2.2.3 Results and Discussions 15 2.2.3.1 TEM Results 15 2.2.3.2 PL and EL of PECVD-grown Si-np based SiOx 17 2.2.3.3 Turn-on Voltage and P-I of PECVD-grown Si-np based SiOx 18 2.2.3.4 I-V of PECVD-grown Si-np based SiOx 20 2.2.3.5 C-V of PECVD-grown Si-np based SiOx 22 2.2.3.6 Retention Time of PECVD-grown Si-np based SiOx 23 2.2.4 Summary 27 Chapter 3 Multicolor Electroluminescence of Si-rich SiOx based MOSLEDs 39 3.1 Introduction 39 3.2 Sample preparation and experimental setup 40 3.3 Results and Discussions 41 3.3.1 PL of PECVD-grown Si-nc based SiOx 41 3.3.2 FTIR of PECVD-grown Si-nc based SiOx 43 3.3.3 Reflectivity Spectrum of PECVD-grown Si-nc based SiOx 44 3.3.4 I-V of PECVD-grown Si-nc based SiOx 45 3.3.5 F-N plot of PECVD-grown Si-nc based SiOx 46 3.3.6 Band diagram of PECVD-grown Si-nc based SiOx 47 3.3.7 P-I curves of PECVD-grown Si-nc based SiOx 48 3.3.8 EL spectrum of PECVD-grown Si-nc based SiOx 50 3.4 Summary 52 Chapter 4 Conclusion 61 REFERENCE 64 作者簡介 76 Publication List 77 | |
dc.language.iso | en | |
dc.title | 奈米矽基金氧半記憶體元件與發光二極體 | zh_TW |
dc.title | Si Nanocrystal Based Metal-Oxide Semiconductor Memory Devices and Light Emitting Diodes | en |
dc.type | Thesis | |
dc.date.schoolyear | 97-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳啟昌(Chii-Chang Chen),黃建璋(JianJang Huang),高至誠(Chih-Cheng Kao) | |
dc.subject.keyword | 奈米矽晶,富矽氧化矽,導通電壓,電荷儲存效應,保持時間, | zh_TW |
dc.subject.keyword | Si-ncs,silicon rich silicon oxide,turn-on voltage,charge storage effect,retention time, | en |
dc.relation.page | 77 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2009-07-27 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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