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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳肇欣(Chao-Hsin Wu) | |
dc.contributor.author | Yung-Ting Ho | en |
dc.contributor.author | 何咏庭 | zh_TW |
dc.date.accessioned | 2021-06-08T03:34:10Z | - |
dc.date.copyright | 2019-08-20 | |
dc.date.issued | 2019 | |
dc.date.submitted | 2019-08-05 | |
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[2] H. Technologies, '5G Spectrum Public Policy Position ' 2017. http://www-file.huawei.com//media/CORPORATE/PDF/publicpolicy/public_policy_position_5g_spectrum.pdf [3] P. S. Park, 'Advanced Channel Engineering in III-Nitride HEMTs for High Frequency Performance,' The Ohio State University, 2013. [4] U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. J. P. o. t. I. Wu, 'GaN-based RF power devices and amplifiers,' vol. 96, no. 2, pp. 287-305, 2008. [5] C.-F. Huang, 'Overview of GaN Based Power Device,' 2014. http://www.edma.org.tw/doc/Magazine_20-1-3.pdf [6] B. J. J. I. E. D. L. Baliga, 'Power semiconductor device figure of merit for high-frequency applications,' vol. 10, no. 10, pp. 455-457, 1989. [7] R. Mitchell, 'Is GaN Replacing Silicon? The Applications and Limitations of Gallium Nitride in 2019,' 2019. https://www.allaboutcircuits.com/news/GaN-replace-silicon-applications-limitations-gallium-nitride/ [8] K. A. IHS Market Technology, 'SiC and GaN shine at APEC 2018,' 2018. https://technology.ihs.com/600883/sic-and-gan-shine-at-apec-2018 [9] I. Grand View Research, 'Gallium Nitride (GaN) Semiconductor Devices Market Analysis By Product (GaN Radio Frequency Devices, Opto-semiconductors, Power Semiconductors),' 2017. https://www.grandviewresearch.com/industry-analysis/gan-gallium-nitride-semiconductor-devices-market [10] S. Chu, X. Kong, S. Vanka, H. Guo, and Z. Mi, 'Artificial photosynthesis on III-nitride nanowire arrays,' in Semiconductors and Semimetals, vol. 97: Elsevier, 2017, pp. 223-255. [11] O. Ambacher et al., 'Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures,' vol. 85, no. 6, pp. 3222-3233, 1999. [12] T. Lalinský et al., 'T-shaped gates for heterostructure field effect transistors,' vol. 61, no. 2-4, pp. 329-332, 2001. [13] C. Gaquiere, B. Bonte, D. Theron, Y. Crosnier, P. Arsene-Henri, and T. J. I. T. o. E. D. Pacou, 'Breakdown analysis of an asymmetrical double recessed power MESFET's,' vol. 42, no. 2, pp. 209-214, 1995. [14] T. Suemitsu, T. Enoki, H. Yokoyama, Y. Umeda, and Y. J. E. L. Ishii, 'Impact of two-step-recessed gate structure on RF performance of InP-based HEMTs,' vol. 34, no. 2, pp. 220-222, 1998. [15] Y. Awano, M. Kosugi, K. Kosemura, T. Mimura, and M. J. I. T. o. E. D. Abe, 'Short-channel effects in subquarter-micrometer-gate HEMTs: Simulation and experiment,' vol. 36, no. 10, pp. 2260-2266, 1989. [16] D. Guerra, R. Akis, F. A. Marino, D. K. Ferry, S. M. Goodnick, and M. J. I. E. D. L. Saraniti, 'Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs,' vol. 31, no. 11, pp. 1217-1219, 2010. [17] B. Lee et al., 'High RF performance improvement using surface passivation technique of AlGaN/GaN HEMTs at K-band application,' vol. 49, no. 16, pp. 1013-1015, 2013. [18] H. Wang, J. W. Chung, X. Gao, S. Guo, and T. J. p. s. s. c. Palacios, 'Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance,' vol. 7, no. 10, pp. 2440-2444, 2010. [19] Z. Sheng et al., 'AlGaN/GaN high electron mobility transistor with Al2O3+ BCB passivation,' vol. 24, no. 11, p. 117307, 2015. [20] P. Someswaran, 'Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction,' The Ohio State University, 2015. [21] G. Dambrine, A. Cappy, F. Heliodore, E. J. I. T. o. m. t. Playez, and techniques, 'A new method for determining the FET small-signal equivalent circuit,' vol. 36, no. 7, pp. 1151-1159, 1988. [22] G. Crupi et al., 'Accurate multibias equivalent-circuit extraction for GaN HEMTs,' vol. 54, no. 10, pp. 3616-3622, 2006. [23] F. Diamand and M. Laviron, 'Measurement of the extrinsic series elements of a microwave MESFET under zero current conditions,' in 1982 12th European Microwave Conference, 1982, pp. 451-456: IEEE. [24] Q. Fan, J. H. Leach, and H. J. P. o. t. I. Morkoc, 'Small signal equivalent circuit modeling for AlGaN/GaN HFET: Hybrid extraction method for determining circuit elements of AlGaN/GaN HFET,' vol. 98, no. 7, pp. 1140-1150, 2010. [25] C.-W. Tsou, C.-Y. Lin, Y.-W. Lian, and S. S. J. I. T. o. E. D. Hsu, '101-GHz InAlN/GaN HEMTs on silicon with high Johnson’s figure-of-merit,' vol. 62, no. 8, pp. 2675-2678, 2015. [26] E. Arslan, S. Bütün, Y. Şafak, and E. J. J. o. e. m. Ozbay, 'Investigation of trap states in AlInN/AlN/GaN heterostructures by frequency-dependent admittance analysis,' vol. 39, no. 12, pp. 2681-2686, 2010. [27] D. Marti et al., '94-GHz large-signal operation of AlInN/GaN high-electron-mobility transistors on silicon with regrown ohmic contacts,' vol. 36, no. 1, pp. 17-19, 2014. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/21441 | - |
dc.description.abstract | 在本篇論文中,我們採用高阻值矽基板氮化鋁鎵/氮化鎵異質接面結構來製作元件,利用氮化鎵優異的特性如寬能隙、高崩潰電壓、高電子遷移率來製作HEMT高頻元件,接著利用T型閘極製程所具有的優異特性取代傳統Normal閘極製程,藉此提高元件在高頻特性的表現。
本論文的第一部分為T型閘極製程開發,我們利用Four-Layer Resist的放式進行製作,目的為降低閘極電阻值,使最大震盪頻率(fmax)與電流增益截止頻率(fT)能持續提升。 第二部分為元件的直流特性分析,我們成功利用電子束曝光顯影技術製作出T型閘極高電子遷移率電晶體,其閘極線寬最小為60-80奈米,使得元件之最高轉導值提升至367 mS/mm。為了解決元件在閘極線寬縮小後所面臨之短通道效應,我們降低氮化鋁鎵障壁層的厚度,使元件之開關比達到3-4個數量級,並針對不同障壁層厚度與元件尺寸進行探討。 最後為了分析元件的高頻特性,我們利用模擬軟件建立元件的小訊號模型,幫助我們分析元件內部小訊號參數的影響,同時也對不同偏壓點與元件尺寸進行探討,並模擬出元件的最大震盪頻率(fmax)與電流增益截止頻率(fT)。在閘極偏壓為-3.5 V與汲極偏壓為6 V的情況下,最佳元件之fT與fmax分別為51.2/97.7 GHz。 | zh_TW |
dc.description.abstract | In this thesis, we take advantages of the superior properties of Gallium Nitride, such as wide bandgap, high breakdown voltage, high electron mobility to fabricate the RF devices with AlGaN/GaN heterostructures on 4-inch HR-substrate. We replace normal gate structure with T-shaped gate fabrication process due to some advantages of T-shaped gate structure, which improves the device performance at high frequency condition.
The first part is the development of T-shaped Gate structure. In order to improve the maximum oscillation frequency (fmax) and current gain cutoff frequency (fT), we use Four-Layer Resist method to fabricate the T-Shaped Gate structure. The second part we analyze the DC characteristics of device. We successfully use E-beam lithography technology to fabricate T-Shaped Gate high electron mobility transistors, and the minimum gate length of the device is about 60-80 nm. The small gate length leads high transconductance(gm) about 367 mS/mm. The devices with gate length smaller than 100 nm will suffer from serve short channel effect., we use gate recessed technology to narrow the thickness of AlGaN barrier to avoid problem, and improve the On/off ratio about 3-4 orders of the devices. Finally, we discuss the DC characteristics of device with different AlGaN barrier thickness and geometric size. The last part is the analysis of RF characteristics, we build a Small-signal model and simulate each component in the circuit to help us understand the influence of each elements. We discuss the RF characteristics at different bias conditions and geometric size. At gate bias of -3.5 V and drain bias of 6 V, the fT and fmax of the golden device are 51.2/97.7 GHz, respectively. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T03:34:10Z (GMT). No. of bitstreams: 1 ntu-108-R06941082-1.pdf: 6188425 bytes, checksum: 96aa3942b38681fa166a25f4b9eb6062 (MD5) Previous issue date: 2019 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 iii ABSTRACT iv CONTENTS v LIST OF FIGURES vii LIST OF TABLES xi Chapter 1 緒論 1 1.1 背景介紹 1 1.2 氮化鎵材料特性介紹 5 1.3 研究動機與論文概述 8 Chapter 2 T型閘極之開發 9 2.1 T-Shaped Gate應用介紹 9 2.2 T-Shaped Gate製程方法介紹 11 2.2.1 Bi-Layer Resist System T型閘極製程 11 2.2.2 Tri-Layer Resist System T型閘極製程 13 2.3 T-Shaped Gate製程開發 16 2.3.1 T-Shaped Gate相關參數測試 16 2.3.2 T-Shaped Gate製作與成果 18 Chapter 3 T型閘極-高電子遷移率電晶體之製程開發與不同障壁層厚度之直流特性分析 24 3.1 實驗介紹與光罩設計 24 3.2 T型閘極-高頻氮化鋁鎵/氮化鎵高電子遷移率電晶體之製作流程 26 3.2.1 光罩佈局與結構設計 26 3.2.2 磊晶結構 28 3.2.3 T型閘極-電晶體之製作流程 31 3.3 不同障壁層厚度之直流特性分析與尺寸變化比較 38 3.3.1 不同障壁層厚度之直流特性分析 38 3.3.2 不同幾何尺寸變化之直流特性分析 42 Chapter 4 T型閘極-電晶體高頻特性與小訊號分析 51 4.1 電晶體小訊號模型 51 4.1.1 小訊號等效電路模型 51 4.1.2 高頻量測架設介紹及原理 56 4.1.3 元件參數萃取 59 4.1.4 高頻參數結果與分析 64 4.2 氮化鎵/氮化鋁鎵高電子遷移率電晶體之高頻特性分析 66 4.2.1 偏壓點對小訊號參數之影響 66 4.2.2 元件尺寸對小訊號參數之影響 70 Chapter 5 結論與未來展望 76 參考文獻 78 | |
dc.language.iso | zh-TW | |
dc.title | T型閘極-高頻氮化鋁鎵/氮化鎵高電子遷移率電晶體之製作與分析 | zh_TW |
dc.title | Fabrication and Analysis of High Frequency AlGaN/GaN HEMTs with T-shaped Gate | en |
dc.type | Thesis | |
dc.date.schoolyear | 107-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 黃定洧(Ding-Wei Huang) | |
dc.contributor.oralexamcommittee | 吳育任(Yuh-Renn Wu),張子璿(Tzu-Hsuan Chang),張書維(Shu-Wei Chang) | |
dc.subject.keyword | 氮化鋁鎵/氮化鎵異質接面結構,高電子遷移率電晶體,閘極絕入,障壁層厚度,高頻元件,小訊號模型,T型閘極, | zh_TW |
dc.subject.keyword | AlGaN/GaN heterostructure,HEMTs,gate recess,barrier thickness,RF device,Small-signal model,T-shaped gate, | en |
dc.relation.page | 79 | |
dc.identifier.doi | 10.6342/NTU201902514 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2019-08-05 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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