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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 莊東漢 | |
dc.contributor.author | Chi-Shen Lai | en |
dc.contributor.author | 賴其伸 | zh_TW |
dc.date.accessioned | 2021-06-08T02:40:18Z | - |
dc.date.copyright | 2018-05-17 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-05-01 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/20112 | - |
dc.description.abstract | Thermoelectric materials play an important role in the issue of green energy. Since many industrial waste heat is present at a temperature between 200-600°C, the development of medium-high-temperature thermoelectric materials becomes more and more important. At present, Zn4Sb3 is quite representative in medium-high-temperature thermoelectric materials, but due to its high activity, Zn can easily penetrate the conventional diffusion barrier layer into the Cu electrode, resulting in the failure of the thermoelectric material, so there is no yet sufficiently durable Zn4Sb3 commercial thermoelectric module. In this study, in order to investigate whether the amorphous structure can effectively enhance the performance of the barrier layer, diffusion couples were prepared by thermocompression bonding using metallic glass Ni-Pd bands and Zn4Sb3 and aging tests were performed. Meanwhile, some amorphours Ni-Pd bands were annealed to crystalline structure and was made into diffusion couples by following the same steps as above, and aging was performed under the same conditions, thereby comparing the difference in the diffusion barrier performance between the amorphous and the crystalline structure.
In most of the sample comparisons, it was found that the thickness of the interface in amorphous diffusion couple was thinner, so it can be inferred that the amorphous structure has a better diffusion barrier performance. Besides, the layered structures that are often found in amorphous diffusion couples are also discussed. It is deduced that the Zn content in the interfacial intermetallic compounds is much larger than that of Ni and Pd, resulting in Ni and Pd atoms being rejected to the original metallic glass matrix. Because the growth rate of the intermetallic compound is much greater than the diffusion rate of Ni and Pd atoms in the metallic glass, the two atoms gradually accumulate at the interface between the intermetallic compound and the metallic glass. Finally, when the cumulative amount reaching an upper limit value, and because the metal glass is too dense at this place, Zn atoms can no longer be arranged in crystalline state therein. Thus, the dense metal glass will remain in the place permanently. After that, Zn atoms will go over the place and go to the next looser metallic glass zone and produce the second layer of intermetallic compound, which in turn generates the observed layered structure. In this study, it was also found that the formation rate of the intermetallic compound was affected by the hot-pressing pressure, and it was inferred that the formation of the intermetallic compound would be accompanied by a violent volume expansion. Therefore, the pressurization can suppress the growth of the intermetallic compound, and simultaneously reduce the difference between the growth rate of the intermetallic compound and the diffusion rate of Ni and Pd atoms, which in turn makes it more difficult to produce a layered structure. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T02:40:18Z (GMT). No. of bitstreams: 1 ntu-107-R05527066-1.pdf: 5570779 bytes, checksum: e013e48a07b4f980782276b27ed9fb63 (MD5) Previous issue date: 2018 | en |
dc.description.tableofcontents | 致謝 I
摘要 II Abstract III 目錄 V 圖目錄 VII 表目錄 XII 第一章 前言 1 1-1 研究背景 1 1-2 研究動機 3 第二章 理論及文獻回顧 4 2-1熱電材料之發展 4 2-1-1 Seebeck Effect 5 2-1-2 Peltier Effect 5 2-1-3 Thomson Effect 5 2-1-4 Figure of Merit 5 2-1-5熱電模組 7 2-2擴散阻障層 12 2-3界面成長動力學 14 2-3-1界面控制反應 15 2-3-2擴散控制反應 16 2-4 Ni-Zn界面反應 17 2-5 金屬玻璃 21 2-5-1金屬玻璃之發展 21 2-5-2金屬玻璃之特性 21 2-5-3金屬玻璃作為擴散阻障層之可行性 23 第三章 實驗方法 28 3-1金屬玻璃與熱電材料之擴散偶 28 3-2熱電偶時效試驗 29 3-3熱電模組界面反應及分析 29 第四章 結果與討論 35 4-1結晶態與非晶態的界面成長比較 35 4-2金屬玻璃擴散中之層狀結構 65 4-3界面層中的特定形狀凹孔 75 4-4界面層與ZN4SB3交界處之碎粒層 78 4-5壓力對界面層厚度生長之影響 80 第五章 結論 85 參考文獻 86 | |
dc.language.iso | zh-TW | |
dc.title | 金屬玻璃作為Zn4Sb3熱電模組擴散阻障層之可行性 | zh_TW |
dc.title | The Feasibility of Metallic Glass as Diffusion Barrier of Zn4Sb3 Thermoelectric Module | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 施漢章,林招松,陳勝吉,黃菁儀 | |
dc.subject.keyword | 熱電材料,擴散阻障層,金屬玻璃,介金屬化合物,層狀結構, | zh_TW |
dc.subject.keyword | Thermoelectric material,Diffusion barrier,Metallic glass,Intermetallic compound,Layered structure, | en |
dc.relation.page | 93 | |
dc.identifier.doi | 10.6342/NTU201800771 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2018-05-01 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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