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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳志毅(Chih-I Wu) | |
dc.contributor.author | Yu-Ting Huang | en |
dc.contributor.author | 黃郁庭 | zh_TW |
dc.date.accessioned | 2021-06-08T02:38:17Z | - |
dc.date.copyright | 2018-10-03 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2018-07-19 | |
dc.identifier.citation | 參考文獻
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Zhu, Y., et al., Carbon-Based Supercapacitors Produced by Activation of Graphene. Science, 2011. 332(6037): p. 1537-1541. 9. Liu, C., et al., Graphene-Based Supercapacitor with an Ultrahigh Energy Density. Nano Letters, 2010. 10(12): p. 4863-4868. 10. Geim, A.K. and K.S. Novoselov, The rise of graphene. Nat Mater, 2007. 6(3): p. 183-191. 11. Castro Neto, A.H., et al., The electronic properties of graphene. Reviews of Modern Physics, 2009. 81(1): p. 109-162. 12. Miro, P., M. Audiffred, and T. Heine, An atlas of two-dimensional materials. Chemical Society Reviews, 2014. 43(18): p. 6537-6554. 13. Loh, K.P., et al., The chemistry of graphene. Journal of Materials Chemistry, 2010. 20(12): p. 2277-2289. 14. Eda, G. and M. Chhowalla, Chemically Derived Graphene Oxide: Towards Large-Area Thin-Film Electronics and Optoelectronics. Advanced Materials, 2010. 22(22): p. 2392-2415. 15. Mattevi, C., H. Kim, and M. Chhowalla, A review of chemical vapour deposition of graphene on copper. Journal of Materials Chemistry, 2011. 21(10): p. 3324-3334. 16. Chang, C.-H., K.-C. Leou, and C. Lin, Real-time feedback control of electron density in inductively coupled plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001. 19(3): p. 750-756. 17. Wei, H.W., et al., Effect of high-voltage sheath electric field and ion-enhanced etching on growth of carbon nanofibers in high-density plasma chemical-vapor deposition. Journal of Applied Physics, 2005. 98(4): p. 044313. 18. Wu, T.J. and C.S. Kou, A large-area plasma source excited by a tunable surface wave cavity. Review of Scientific Instruments, 1999. 70(5): p. 2331-2337. 19. Wu, T.J., et al., Experimental study of the plasma resonance in a planar surface wave plasma. Physics of Plasmas, 2001. 8(7): p. 3195-3198. 20. M., B. Inductively-Coupled Plasma (ICP) Excitation Source. 1996. 21. Thomas, R. and G.M. Rao, Synthesis of free standing carbon nanosheet using electron cyclotron resonance plasma enhanced chemical vapor deposition. Applied Surface Science, 2012. 258(11): p. 4877-4880. 22. Jafari, A., et al., Effect of plasma power on growth of multilayer graphene on copper using plasma enhanced chemical vapour deposition. Journal of Chemical Research, 2016. 40(1): p. 40-43. 23. Wan, Y., K.R. McIntosh, and A.F. Thomson, Characterisation and optimisation of PECVD SiNx as an antireflection coating and passivation layer for silicon solar cells. AIP Advances, 2013. 3(3): p. 032113. 24. Lloyd, J.R. and J.J. Clement, Electromigration in copper conductors. Thin Solid Films, 1995. 262(1): p. 135-141. 25. Shao, W., et al., Electromigration in copper damascene interconnects: reservoir effects and failure analysis. Surface and Coatings Technology, 2005. 198(1): p.257-261. 26. Lienig, J., Electromigration and its impact on physical design in future technologies, in Proceedings of the 2013 ACM international symposium on International symposium on physical design. 2013, ACM: Stateline, Nevada, USA. p. 33-40. 27. Stangl, M., et al., Influence of incorporated non-metallic impurities on electromigration in copper damascene interconnect lines. Thin Solid Films, 2009. 517(8): p. 2687-2690. 28. Ferrari, A.C. and J. Robertson, Interpretation of Raman spectra of disordered and amorphous carbon. Physical Review B, 2000. 61(20): p. 14095-14107. 29. Shin, M. Scanning Electron Microscope. Principle of SEM 2017. 30. E. R. (Ross) Crain, P.E. X-RAY DIFFRACTION METHODS. X-RAY DIFFRACTION BASICS 2015. 31. Ogawa, Y., et al., Domain Structure and Boundary in Single-Layer Graphene Grown on Cu(111) and Cu(100) Films. The Journal of Physical Chemistry Letters, 2012. 3(2): p. 219-226. 32. Tang, B., H. Guoxin, and H. Gao, Raman Spectroscopic Characterization of Graphene. Applied Spectroscopy Reviews, 2010. 45(5): p. 369-407. 33. Pimenta, M.A., et al., Studying disorder in graphite-based systems by Raman spectroscopy. Physical Chemistry Chemical Physics, 2007. 9(11): p. 1276-1290. 34. Ferrari, A.C., et al., Raman Spectrum of Graphene and Graphene Layers. Physical Review Letters, 2006. 97(18): p. 187401. 35. Ito, J., J. Nakamura, and A. Natori, Semiconducting nature of the oxygen-adsorbed graphene sheet. Journal of Applied Physics, 2008. 103(11): p. 113712. 36. He, H., et al., A new structural model for graphite oxide. Chemical Physics Letters, 1998. 287(1): p. 53-56. 37. Bagri, A., et al., Structural evolution during the reduction of chemically derived graphene oxide. Nat Chem, 2010. 2(7): p. 581-587. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19976 | - |
dc.description.abstract | 本論文探討利用電漿輔佐化學氣相沉積法(PECVD)[1, 2]來優化石墨烯之製程,並於不同之晶格與結構設計來進行生長。PECVD 為一種新式製程,其特點為可在低溫環境下快速生長出石墨烯,相較於傳統之 CVD[3]製程有更進一步之突破。 起先對生長之基板做處理,並以XRD 檢視其晶格結構,本篇使用之銅片晶向為(100),而銅基板為(111),再以SEM 及 XPS[4]分析其表面之殘留物質。第一部分為用 PECVD 生長石墨烯於銅片上,並與 CVD 製程之石墨烯做拉曼分析比較,再以XPS、UPS 及 SEM 去對石墨烯進行進一步之分析,判斷其生長之品質與結晶形狀,並比較兩者之優缺。第二部分為進階生長,利用 PECVD 生長石墨烯於銅線及銅基板上,予以應用在不同用途。由於銅基板之晶向與銅片相異,因此製程參數亦有所不同,所以我們分別設計幾種不同結構去調整其變因,並討論分析其生長之結果,而最後用氧化石墨烯塗佈法,成功生長出石墨烯於銅(111)基板上。由於銅(111)晶向和石墨烯之晶格較為匹配,會使得應變(strain)較小,所以石墨烯之品質會更有效提升,因此我們利用 PECVD 生長石墨烯於銅基板,能同時兼顧低溫、快速與品質優良之特點,可更加廣泛應用於業界之中。 | zh_TW |
dc.description.abstract | In this master thesis, we discuss the way to optimize the growth of graphene by Plasma-Enhanced Chemical Vapor Deposition(PECVD); besides, using different substrates and structure designs. PECVD is a brand new process which carrys out at reduced temperature and within few minutes. Therefore, it could be applied to more academic fields than Chemical Vapor Deposition. Above all, we purity the substrates and examine their lattice by X-Ray Diffraction.
Then, we found the lattice of copper foil is (100) and (111) for the copper wafer. Next, SEM and XPS are also used to detect the surface of the substrates. The first part of this thesis is about the growth of graphene on copper foil by PECVD, and compare the graphene quality from Raman spectrum with the process by CVD. In addition, XPS, UPS and SEM are utilized to do deeper analysis. Therefore, we are able to analyze and compare the quality and domain structure of two different process. The second part is advanced growth process. We attempt to grow graphene on copper wire and copper wafer by PECVD process for more application. Due to the different domain structure, the experimental parameters will change significantly. So, we design up-to-date structures and analyze the growth variables. In the end, we create a new process which could successfully grow graphene on copper wafer. Owing to the lattice match of (111)copper and graphene, the strain will shrink and the quality of graphene will become better. As a result, the PECVD process we use hold the advantage of low-temperature, fewer time and higher quality. Thus, we expect that this process could be applied to more fields. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T02:38:17Z (GMT). No. of bitstreams: 1 ntu-106-R04941056-1.pdf: 5803865 bytes, checksum: 3b9847edeeeca42f43c8e20cf99e1a47 (MD5) Previous issue date: 2017 | en |
dc.description.tableofcontents | 誌謝 1
摘要 2 ABSTRACT 3 CONTENTS 4 LIST OF FIGURES 7 LIST OF TABLES 10 Chapter 1 基本原理 11 1.1 石墨烯簡介 11 1.2 石墨烯之電子結構 12 1.3 石墨烯之製備方法 15 1.3.1 液相剝離法 16 1.3.2 還原氧化石墨烯法 17 1.3.3 化學氣相沉積法 18 1.4 電漿原理 19 1.4.1 電漿簡介 19 1.4.2 電漿輔佐化學氣相沉積法 22 1.5 電致遷移效應 23 1.6 研究動機 25 Chapter 2 實驗儀器 26 2.1 實驗儀器 26 2.1.1 微波電漿機及高頻電漿引燃器 26 2.1.2 拉曼光譜儀 (Raman spectrometer) 27 2.1.3 掃描電子顯微鏡 (Scanning Electron Microscope, SEM) 28 2.1.4 X 射線光電子頻譜分析儀及紫外光電子頻譜分析儀 31 2.1.5 X 光繞射儀 (X-ray diffractometer, XRD) 33 Chapter 3 基板處理 35 3.1 SEM 分析 35 3.2 XPS 分析 38 3.3 XRD 分析 40 Chapter 4 石墨烯生長 43 4.1 CVD & PECVD 製程 43 4.1.1 CVD 流程 43 4.1.2 PECVD 流程 43 4.2 拉曼光譜原理 44 4.2.1 石墨烯之判定 44 4.2.2 拉曼光譜分析 47 4.3 XPS 分析 49 4.4 UPS 分析 51 4.5 SEM 分析 53 4.6 結果討論 54 Chapter 5 進階成長 56 5.1 製程設計 56 5.2 拉曼分析 57 5.3 失敗分析 60 5.3.1 生長過程 60 5.3.2 氣體成分 61 5.3.3 結構勘誤 62 5.4 製程優化 63 5.5 結果討論 65 Chapter 6 結論 68 6.1 總結 68 6.2 未來展望 68 參考文獻 69 | |
dc.language.iso | zh-TW | |
dc.title | 利用電漿輔佐化學氣相沉積法低溫成長石墨烯於銅薄膜 | zh_TW |
dc.title | Graphene Growth on Copper Films by Plasma-Enhanced Chemical Vapor Deposition at Reduced Temperature | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林恭如(Gong-Ru Lin),陳美杏(Mei-Hsin Chen),陳奕君(I-Chun Cheng) | |
dc.subject.keyword | 石墨烯,化學氣相沉積法,電漿輔佐化學氣相沉積法,低溫製程,拉曼分析, | zh_TW |
dc.subject.keyword | graphene,CVD,PECVD,low temperature process,Raman analysis, | en |
dc.relation.page | 70 | |
dc.identifier.doi | 10.6342/NTU201801610 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2018-07-20 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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