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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張慶瑞(Ching-Ray Chang) | |
dc.contributor.author | Wei-Ying Cheng | en |
dc.contributor.author | 程暐瀅 | zh_TW |
dc.date.accessioned | 2021-06-08T02:23:14Z | - |
dc.date.copyright | 2020-08-24 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-08-19 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19854 | - |
dc.description.abstract | 二硒化錫是一種非均向性的多層材料,具有豐富的物理性質,具有各種不同應用的可能性。本論文使用第一原理計算來研究二硒化錫的氣體偵測特性。理論模擬結果顯示電子從二硒化錫轉移到二氧化氮氣體分子上,其電子轉移的方向與氨氣相反。值得注意的是,二硒化錫吸附二氧化氮分子之後,在費米能量附近出現一條平坦的能帶,該能帶主要為二氧化氮分子所佔據。與氨氣相比,吸附在二硒化錫上的二氧化氮分子具有較低的吸附能和較高的電荷轉移量。與原始單層的二硒化錫相比,含有Se空缺的單層二硒化錫明顯增強了對二氧化氮吸附的敏感性。當吸附二氧化氮分子時,摻雜氧原子的單層二硒化錫與原始單層二硒化錫顯示出相似的靈敏度。但是,只有摻雜氮原子的單層二硒化錫顯示出對二氧化氮和氨氣吸附敏感度的明顯增強。雖然我們之前用聚苯乙烯微米顆粒裝飾石墨烯表面的相關研究,結果呈現前述系統可增強二氧化氮分子感測度。然而,前述系統會包含太多原子,我們無法確定是否可以直接用VASP來做計算。在未來的工作中,我們會再嘗試找尋適當的方式來計算前述複雜系統的氣體偵測性質。 | zh_TW |
dc.description.abstract | SnSe2 is an anisotropic binary-layered material with rich physics, which is used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe2 with first-principles calculations. Theoretical simulations indicate that electrons transfer from SnSe2 to NO2, whereas the direction of charge transfer is the opposite for NH3. Notably, a flat molecular band appears around the Fermi energy after NO2 adsorption and the induced molecular band is close to the conduction band minimum. Moreover, compared with NH3, NO2 molecules adsorbed on SnSe2 have lower adsorption energy and a higher charge transfer value. Compared with the gas molecular adsorbed on pristine SnSe2 monolayer, the Se-vacancy SnSe2 monolayer obviously enhances sensitivity to NO2 adsorption. The O-doped SnSe2 monolayer shows similar sensitivity to the pristine SnSe2 monolayer when adsorbing NO2 molecule. However, only the N-doped SnSe2 monolayer represents a visible enhancement for NO2 and NH3 adsorption. Our previous work shows NO2 sensing enhancement of graphene decorated with polystyrene beads, which include many atoms that we cannot be sure if it could be calculated by VASP. In future work, we will try to simulate this complex system. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T02:23:14Z (GMT). No. of bitstreams: 1 U0001-1408202015284700.pdf: 4245949 bytes, checksum: 5d28901e43a2e6d89e221af242e296fe (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | CONTENTS 口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii LIST OF TABLES xii Chapter 1 Introduction 1 1.1 Background 1 1.2 Gas sensing of 2D materials 2 1.3 Promising candidate for gas sensing - SnSe2 5 1.4 Enhancement of gas sensing of defective SnSe2 6 1.5 Summary of Chapters 7 Chapter 2 Theoretical framework 9 2.1 Density functional theory (DFT) 9 2.1.1 Hohenberg-Kohn theorem 10 2.1.2 Kohn–Sham equations 11 2.1.3 Exchange correlation potential solving Kohn–Sham equations 14 2.2 Self-consistent field (SCF) calculation for solving Kohn–Sham equations in VASP 15 2.3 Projector augmented wave (PAW) method in VASP 17 2.4 van der Waals correction: DFT-D2 method 19 2.5 Bader analysis for charge transfer 20 Chapter 3 High Selectivity Gas Sensing and Charge Transfer of pristine SnSe2 22 3.1 Introduction 23 3.2 Methodology 23 3.3 Benchmark of NO2 and NH3 adsorption on graphene 24 3.4 Results of molecules adsorbed on pristine SnSe2 monolayer 25 3.4.1 Optimized structures 27 3.4.2 Band structures 28 3.4.3 Adsorption energy 30 3.4.4 Charge density difference and charge transfer 31 3.4.5 Electron localization function (ELF) 33 3.5 Verified by dynamic experiments 34 3.5.1 The SnSe2 gas sensor device 34 3.5.2 The dynamic sensing responses 35 3.6 Conclusion 38 Chapter 4 Gas Sensing of Defective SnSe2 Monolayers 39 4.1 Introduction 40 4.2 Computational details and parameters 41 4.3 Results of molecules adsorbed on pristine and defective SnSe2 monolayers 45 4.3.1 SnSe2 monolayers 45 4.3.2 molecules adsorbed on SnSe2 monolayers 47 .4.3.2.1 NO2 49 .4.3.2.2 NH3 53 4.4 Comparison of molecules adsorbed on defective SnSe2 monolayers 58 4.4.1 On the Se-vacancy SnSe2 monolayer 58 4.4.2 On the O-doped SnSe2 monolayer 59 4.4.3 On the N-doped SnSe2 monolayer 59 4.5 Conclusions 60 Chapter 5 Summary and Perspectives 62 5.1 Summary 62 5.2 Perspectives and suggestions for future work 63 Appendix: Benchmark of NO2 and NH3 adsorption on graphene 65 Reference 66 | |
dc.language.iso | en | |
dc.title | 二硒化錫的單層結構對於二氧化氮與氨氣的吸附性質的第一原理研究 | zh_TW |
dc.title | First-Principles Study for NO2 and NH3 sensing properties of pristine and defective SnSe2 monolayers | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 林倫年(Michitoshi Hayashi),朱士維(Shi-Wei Chu),蔡政達(Jeng-Da Chai),關肇正(Chao-Cheng Kaun),傅薈如(Huei-Ru Fuh) | |
dc.subject.keyword | 二硒化錫,氣體偵測器,第一原理計算, | zh_TW |
dc.subject.keyword | SnSe2,gas sensors,first-principle study, | en |
dc.relation.page | 71 | |
dc.identifier.doi | 10.6342/NTU202003430 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2020-08-19 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 應用物理研究所 | zh_TW |
顯示於系所單位: | 應用物理研究所 |
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