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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19806完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 廖運炫(Yunn-Shiuan Liao) | |
| dc.contributor.author | Ta-Wei Lin | en |
| dc.contributor.author | 林大維 | zh_TW |
| dc.date.accessioned | 2021-06-08T02:20:17Z | - |
| dc.date.copyright | 2015-08-28 | |
| dc.date.issued | 2015 | |
| dc.date.submitted | 2015-08-20 | |
| dc.identifier.citation | [1]“Intel to Cut A Deal with Apple for Fab 42?,” Research Bulletin, IC Insights, INC., pp.1-4, February 2014. [2]J.C. Sung, H. Ishizuka, M. Y. Tsai and M. Sung, “PCD Pad Conditioners for Electrolytic Chemical mechanical Planarization of Integrated Circuit with Nodes of 45nm and Smaller,” Second International Industrial Diamond Conference, pp.161-175, 2007. [3]L. G. Chen, H. H. Lu,W. C. Chiou, Y. H. Chen, S. M. Jeng, C. H. Yu and M. S. Liang, “Shear Force Study of Low-k/CU CMP for 65nm Generation and Beyond, ” Twenty First International VMIC Conference , Hawaii, pp.431-435, 2005. [4]Hooper, B.J., Byrne, G. and Galligan, S., “Pad Conditioning in Chemical Mechanical Polishing, ” Journal of Materials Process Technology, Vol.123, pp. 107-113, 2002. [5]Park, B., Lee, H., Park, K., Kim, H., Jeong, H., “Pad roughness variation and itseffect on material removal profile in ceria-based CMP slurry,” Journal of Materials Processing Technology, Vol. 203, pp.287-292, 2008. 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[12]Jihng Kuo Ho, Che Hsiung Tsai, Ming Yi Tsai, Tung Sheng Yeh, “Novel method to remove tall diamond grits and improve diamond disk performance,” Int. J. Adv. Manuf. Technol., Vol. 75 pp.1-14, 2014. [13]Ying-Tung Chen, Chen-Chin Yu, Cheng-Shiang Chou, Chih-Chung Chou, Yang-Liang Pai, Zongqing Yang, Mu-Han Cheng, Tien-Chen Hu, hael sung, and James C., “Mosaic Diamond Disks with Brazed Pallets for CMP,” Advanced Materials Research, Vol.126-128, pp. 332-337, 2010. [14]M.Y. Tsai, S. M. Wang, C. C. Tsai and T. S. Yeh, “Investigation of increased removal rate during polishing of single-crystal silicon carbide,” Int. J. Adv. Manuf. Technol., 2015. [15]M.Y. Tsai, C. H. Chen, J. H. Chiang, and T. S. Yeh, “Development and Analysis of Double-Faced Radial and Cluster-Arranged CMP Diamond Disk,” Mathematical Problems in Engineering, 2014. [16]Ching-Jui Shih, Shih-Fu Ou, Chia-Hung Yeh, Chao-Sung Lin and Yung-Ning Pan, “Applications of lithographic mask technology in fabrication of diamond dresser, ” Int. J. Adv. Manuf. Technol., Vol. 68, pp.2329-2334, 2013. [17]Wang, T. C., Hsieh, T. E., Wang, Y. L., Liu, C. W., Lo, K. Y., Wang, J. K. and Lee, W., “A Novel Pad Conditioning Disk Design of Tungsten Chemical Mechanical Polishing Process for Deep Sub-Micron Device Yield Improvement,” IEEE, pp. 363-366, 2001. [18]Ming-Yi Tsai, Shun-Tong Chen , Yunn-ShiuanLiao and James Sung, “Novel diamond conditioner dressing characteristics of CMP polishing pad,” International Journal of Machine Tools Manufacture, Vol. 49, pp.722-729 2009. [19]James C. Sung and Michael Sung, “The brazing of diamond,” Int. Journal of Refractory Metals Hard Materials, Vol. 27, pp.382-393, 2009. [20]Youn-Chul Kim and Suk-Joong L. Kang, “Novel CVD diamond-coated conditioner for improved performance in CMP processes,” International Journal of Machine Tools Manufacture, Vol. 515, pp.565-568 , 2011. [21]Rakes k. Singh, Andrew Galpin and Christopher Vroman, “Development and data of a new CVD diamond CMP pad conditioner ,” Application Note, ENTEGRIS, INC. pp.382-393, 2013. [22]“Acceptable outer edge sweep limits for 3M™ Trizact™ Pad Conditioners,” Technical Bullet, June 2015. [23]John Zabasajja, Jennifer Sokol, Vince Laraia, Matthew Fritz, Junqing Xie and Charles Gould, “3M Microreplicated TrizactTM Pad Conditioners for Feol Tungsten Plug and Metal Gate Applications,” International Conference on Planarization/CMP Technology, pp.311-314, November 2014. [24]Park, K. H., Kimb, H. J., Chang ,O. M.,and Jeong, H.D., “Effects of pad properties on material removal in chemical mechanical polishing,” Journal of Materials Processing Technology, pp.73-76, 2007. [25]宋健民，“多晶鑽石刨平器:拋光墊的精密修整及硬脆材料的延性切削”，機械工業雜誌，第278期，第122-130頁，2006。 [26]Sung, J. and Pai, Y. L., “CMP Pad Dresser：A Diamond Grid Solution,” Proceedings of the Society of Grinding Engineers, pp.189-196, 2000. [27]洪佩文，“化學機械研磨中鑽石修整器修整特性之研究”，碩士論文，國立臺灣大學工學院機械工程研究所，台北，2002。王廷飛，表面組織解說，前程出版社，1984年。 [28]左培倫、何碩洋，“CMP中修整參數對拋光墊特性影響之研究”，機械月刊，第二十八卷第九期，第38-53頁，2002。 [29]Ta-Wei Lin, Ying-Tung Chen, Yunn-Shiuan Liao, Jung-Sheng Chen, Chao-Yu Lin and James C. Sung, “Diamond Pad Conditioners with Oriented Polycrystalline Diamond Cubes,” Advanced Materials Research, Vol. 126-128, pp. 326-331, 2010. [30]Lee, H. S., Sugiyama, M., Philipossian, A., Seike, Y., Takaoka, M., and Miyachi, K., “Evaluation of High Pressure Micro Jet Technology as an Alternative Pad Conditioning Method for Silicon Dioxide Chemical Mechanical Planarization, ” Proceedings of 2004 AICHE Annual Meeting, pp. 1359-1364, 2004. [31]宋健民，“CMP的超越技術-台灣主導全球半導體製造的契機 (上) ”，工業材料雜誌，第254期，第159-169頁，2008。 [32]蘇傳富，“多晶鑽石修整器應用於化學機械拋光精密修整之研究”， 碩士論文， 國防大學理工學院兵器系統工程研究所，桃園，2008。 [33]Chen, Y. T., Liu, Y. C., Wang, L. Y., Chen, T. T. and Sung, J. C., “The Fabrication of CVD Diamond Disk by LIGA Like Process,” International Conference on Planarization/CMP Technology 2008, Hsinchu, Taiwan, pp. 434-442, 2008. [34]宋健民，“CMP的超越技術—台灣主導全球半導體製造的契機 (下)”，工業材料雜誌，第二五四期，第156-163頁，2008。 [35]陳鏞升，“多晶鑽石修整器在化學機械拋光中切削特性之研究”， 碩士論文，國防大學理工學院機械工程研究所，桃園，2009。 [36]Bhushan, B., Principles and Applications of Tribology, John Wiley Sons, pp. 495-497, 1999. [37]蔡明義，“CMP 鑽石修整器修整聚胺酯拋光墊表面特性之研究”，博士論文，國立臺灣大學工學院機械工程研究所，台北，2007。 [38]Chen, Y. T., Lin, C. Y., Sung, J. C., Chou, C. S., Tsai, M. Y. and Sung, M., “The Clear Cutting of CMP Pads By Polycrystalline Diamond Blades,” International Conference on Planarization/CMP Technology, pp. 112-118, 2008. [39]M. Y. Tsai and Y. S. Liao, “Dressing Characteristics of oriented single diamond on cmp polyurethane pad,” Machining Science and Technology, Vol. 13, pp.92-105, 2009. [40]宋健民，“超硬材料”， 全華科技圖書股份有限公司，台北，第七章，2000。 [41]http://www.olympus-ims.com/it/knowledge/metrology/roughness/3d_parameter/ | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19806 | - |
| dc.description.abstract | 化學機械拋光是目前所有平坦化方法應用在半導體製程中最有效的技術，也是製程中不可或缺的重要步驟。為了維持化學機械拋光製程穩定、產量連續及晶圓品質，必須使用鑽石碟適時修整拋光墊，恢復其表面形貌與特性，因此鑽石碟的切削特性直接影響拋光墊的表面形貌與特性。本研究利用CVD鑽石表面呈現微小多晶體突出多樣性形貌特徵，期以獲得切削及犁削(切)之縮小化精密複合切削機制，另為改善鑽石高度差及避免熱分解導致掉鑽產生並降低製作成本，提出以基準板控制CVD鑽石膜突出高度，並於室溫下以環氧樹脂結合固定於金屬圓板上新製程，成功製成新型CVD鑽石碟。透過實驗的方式，探討CVD鑽石碟對拋光墊進行修整之切削機制、切削速率、表面粗糙度及表面形貌等，進一步分析CVD鑽石使用數量之影響，並同時與傳統鑽石碟進行比較。結果顯示，新型MPCVD鑽石碟高度差小於15μm，除有助更平均分擔鑽石承受壓力，可提高鑽石參與修整拋光墊之工作粒數，修整拋光墊速率約高於為傳統硬銲鑽石碟6倍。修整後再生拋光墊之孔洞數形貌接近原始新的拋光墊形貌，修整後之表面粗糙度(Sa、Rpk及Rvk)均優於傳統硬銲鑽石碟並經SEM觀察可產生細密切削溝紋，有助拋光墊更能涵養拋光液及磨粒。另就成本效益考量HFCVD鑽石碟雖於修整時部分鑽石產生破裂脫落現象，若能精進HFCVD產製品質，HFCVD鑽石碟也是一個可以考慮選用方向。 | zh_TW |
| dc.description.abstract | Chemical Mechanical Polishing (CMP) is the most effective method of all kinds of semiconductor global planarization processes nowadays, and also is indispensable procedure in manufacturing process. In order to maintain CMP dressing process stable, production continuous and wafer quality, the surface morphology and characteristics of pad needs to be recovered by means of dressing the pad with diamond conditioner timely. Therefore the surface morphology and characteristics of pad are affected by cutting characteristics of diamond conditioner directly. In the study, a new CVD diamond disk is developed by utilizing the CVD diamonds with tiny polycrystal protrusion on surface in order to obtain minified complex Cutting and Plowing. In addition to diamond leveling control, thermal degradation (weak bonding of diamond) prevention and cost reduction, a brand new process can be done in room temperature as follow: CVD diamonds to be leveled by adhering to a base disk in advance. After the other side of CVD diamonds has been adhered to substrate metal disk by epoxy, remove the base disk at the end. The study discussed cutting phenomenon, dressing rate, surface roughness and surface morphology of CVD diamonds to pad, and also analyzed the influence by utilizing quantity of CVD diamonds compare to traditional diamond disk. The experimental result reveals that new MPCVD diamond disk is leveled to less than 15μm which helps to separate pressure on diamonds. Consequently, the leveled CVD diamond disk improves density of working diamond grits, and PDR is 6 times faster than traditional diamond disk. The dressed pad is unchanged from the initial morphology and pores, and has outstanding Sa, Rpk and Rvk compare to traditional diamond disk; in addition, under observation of SEM, many tiny grooves on the surface are also produced through the process that helps slurry filling torn pores. In addition to cost consideration, even though the film of HFCVD diamond disk might collapse partially during dressing process, this still could be the good selection if HFCVD diamond can be improved. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T02:20:17Z (GMT). No. of bitstreams: 1 ntu-104-D96522008-1.pdf: 4283097 bytes, checksum: 7da1e9fd913b6a3d36909a7af121aef4 (MD5) Previous issue date: 2015 | en |
| dc.description.tableofcontents | 誌謝 i 摘要 ii Abstract iii 目錄 v 圖目錄 viii 表目錄 xii 符號說明 xiii 第一章 緒論 1 1.1 研究動機 1 1.2 文獻回顧 4 1.3 研究目的 14 1.4 本文結構 15 第二章 相關理論 16 2.1 化學機械拋光 16 2.1.1 化學機械拋光基本原理 16 2.1.2 修整器種類 18 2.1.2.1 毛刷 18 2.1.2.2 高壓水霧 19 2.1.2.3 超音波震動 19 2.1.2.4 鑽石碟修整器 20 2.2 影響鑽石碟切削拋光墊的因素 27 2.3 鑽石切削原理 29 2.4 CVD原理 32 第三章 實驗設備與實驗規劃 35 3.1 實驗設備 35 3.2 實驗材料 42 3.3 實驗規劃 49 3.3.1 第一階段 49 3.3.2 第二階段 50 3.3.3 實驗方法說明 52 3.3.3.1 實驗參數說明 52 3.3.3.2 鑽石突出量量測說明 52 3.3.3.3 拋光墊厚度量測說明 54 3.3.3.4 表面粗糙度量測說明 55 第四章 新型鑽石碟製程開發及其切削特性 56 4.1 CVD鑽石碟製程開發說明 56 4.2 等高度量測及分析 63 4.3 新型CVD鑽石碟之切削特性 67 4.4 小結 71 第五章 CVD鑽石碟修整拋光墊之特性 73 5.1 HFCVD鑽石碟之修整速率探討 73 5.1.1 修整拋光墊之速率探討 73 5.1.2 HFCVDD鑽石碟之修整速率與磨耗關係 75 5.2 MPCVD鑽石碟之修整速率探討 77 5.2.1 修整拋光墊之速率探討 77 5.2.2 鑽石條數對切削速率之影響 80 5.3 修整拋光墊後之表面形貌探討 82 5.3.1 拋光墊表面Sa粗糙度之比較 84 5.3.2 拋光墊表面Rpk粗糙度之比較 85 5.3.3 拋光墊Rvk表面粗糙度之比較 85 5.3.4 拋光墊表面形貌之比較 87 5.4 小結 88 第六章 結論與未來展望 89 6.1 結論 89 6.2 未來展望 91 參考文獻 92 作者簡歷 98 | |
| dc.language.iso | zh-TW | |
| dc.title | 新型CVD鑽石碟開發及修整CMP拋光墊特性之研究 | zh_TW |
| dc.title | Development of a New CVD Diamond Disk for CMP Pad Conditioning | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 103-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 左培倫(Pei-Lum Tso),陳炤彰(Chao-Chang A. Chen),蔡明義(Ming-Yi Tsai),陳盈同(Ying-Tung Chen) | |
| dc.subject.keyword | 化學機械拋光,CVD鑽石,鑽石碟, | zh_TW |
| dc.subject.keyword | Chemical mechanical polishing,CVD diamond,Diamond disk, | en |
| dc.relation.page | 99 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2015-08-20 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
| 顯示於系所單位： | 機械工程學系 | |
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