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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 林敏聰(Minn-Tsong Lin) | |
dc.contributor.author | Wei-An Hsieh | en |
dc.contributor.author | 謝偉安 | zh_TW |
dc.date.accessioned | 2021-06-08T02:14:17Z | - |
dc.date.copyright | 2016-02-15 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-12-17 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19702 | - |
dc.description.abstract | Rashba 半導體-碘碲化鉍(BiTeI)其能帶結構-不論是塊材能帶還是表面能帶皆具有極大的Rashba 自旋分裂。不同自旋方向的電子擁有獨立能帶的性質對於未來自旋電子儀器設計有相當幫助,一個極具應用潛力的新興材料。為了將來科技應用,我們選用廣泛使用的磁性材料-鐵,探索鐵在碘碲化鉍的成長機制。
在本篇論文中,首先探討純的碘碲化鉍表面性質,我們將塊材-碘碲化鉍樣品切割,利用掃描穿隧式電子顯微鏡(Scanning Tunneling Microscopy)觀察切面,探索其表面特性與缺陷,並且使用掃描穿隧式電子能譜(Scanning Tunneling Spectroscopy)研究其電子能帶結構,確認其與文獻相合之碲和碘的獨特表面。接著我們將鐵原子蒸鍍於表面,掃描穿隧式電子顯微鏡顯示鐵在碲和碘表面有不同的成長機制,以及用掃描穿隧式電子光譜發現兩種表面都有能帶位移的現象,我們認為其由來為與鐵混成後之電性結構改變。 | zh_TW |
dc.description.abstract | BiTeI, a Rashba semiconductor, contains signi cantly strong Rashba spin-splitting not only in the bulk energy band but also in the surface one. The fact that electrons with opposite spin direction have independent band structure is promising and helpful for spintronic device design in the future. For practical concern in device fabrication, we choose a widely-used magnetic material, iron, to explore its growth on the surface of BiTel.
In this thesis, we investigate the surface properties of pristine BiTeI rst. We cleaved bulk BiTeI, and then used scanning tunneling microscopy (STM) to observe the cross section for studying its surface properties and defects. We also used scanning tunneling spectroscopy (STS) to probe its electronic band structure. The results con rmed that BiTeI exhibits two distinct surface terminations, Te-termination and I-termination, and were in agreement with the published literatures. Then we present iron adatoms grown on BiTeI by thermal evaporation. STM topographies showed that growth modes of two terminations were di erent, and STS data showed band shifts on both terminations. We think that the band shift from electronic properties changed after hybridization with iron atoms. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T02:14:17Z (GMT). No. of bitstreams: 1 ntu-104-R02222008-1.pdf: 3460465 bytes, checksum: 564afd80272008daaf0a72208b93ef11 (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | chapter 1 Introduction p1
chapter 2 Basic Concepts p3 2.1 Rashba Effect p3 2.1.1 Datta-Das Spin Transistor p5 2.2 Giant Rashba Material: BiTeI p8 2.3 Thin Film Growth Mode p10 2.3.1 Classical Theory of Growth p11 2.3.2 Quantum Theory of Growth p14 chapter 3 Apparatus and Sample p16 3.1 Ultra-High Vacuum (UHV) System p16 3.2 Scanning Tunneling Microscopy and Spectroscopy p18 3.3 Sample Preparation p22 3.3.1 In-situ Cleavage p22 3.3.2 Molecular Beam Epitaxy p23 chapter 4 Results and Discussions p25 4.1 STM Topography and STS dI/dV Maps of Pristine BiTeI p25 4.2 STM Topography and STS dI/dV Maps of Iron Deposited BiTeI p28 4.2.1 Iron Growth Mode on Te- and I- terminations p29 4.2.2 Iron Doping Eect on Electronic Structure of BiTeI p32 4.2.3 Distance Dependent Band Shift by Iron Cluster p35 chapter 5 Conclusion p37 Bibliography p39 | |
dc.language.iso | en | |
dc.title | 利用掃描穿隧式電子顯微鏡解析鐵顆粒成長於碘碲化鉍 | zh_TW |
dc.title | Fe Grain Grown on BiTeI Resolved by Scanning Tunneling Microscopy | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 江文中,李愷信 | |
dc.subject.keyword | Rashba 效應,碘碲化鉍,能帶位移,鐵,成長機制,掃描穿隧式電子顯微鏡, | zh_TW |
dc.subject.keyword | Rashba effect,BiTeI,band shift,iron,growth mode,scanning tunneling microscopy, | en |
dc.relation.page | 42 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2015-12-18 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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