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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 顏溪成 | |
| dc.contributor.author | Po-Wei Chen | en |
| dc.contributor.author | 陳伯瑋 | zh_TW |
| dc.date.accessioned | 2021-06-08T01:54:21Z | - |
| dc.date.copyright | 2016-09-13 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-07-14 | |
| dc.identifier.citation | 1. Chen, W.Y., From a global analysis of competing to see Taiwan's IC manufacturing industry trends. 2015.
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P.,Teugels, L. G.,Babu, S. V., Investigation of Guanidine Carbonate-Based Slurries for Chemical Mechanical Polishing of Ru/TiN Barrier Films with Minimal Corrosion. Ecs Journal of Solid State Science and Technology, 2014. 3(7): p. P227-P234. 29. Jiang, L., He, Y. Y.,Niu, X. Y.,Li, Y. Z.,Luo, J. B., Synergetic effect of benzotriazole and non-ionic surfactant on copper chemical mechanical polishing in KIO4-based slurries. Thin Solid Films, 2014. 558: p. 272-278. 30. Cheng, J., Wang, T. Q.,Mei, H. G.,Zhou, W. B.,Lu, X. C., Synergetic effect of potassium molybdate and benzotriazole on the CMP of ruthenium and copper in KIO4-based slurry. Applied Surface Science, 2014. 320: p. 531-537. 31. Kim, I.K., Prasad, Y. N.,Kwon, T. Y.,Kim, H. M.,Busnaina, A. A.,Park, J. G., Citric Acid and NaIO4 Based Alkaline Cleaning Solution for Particle Removal during Post-Ru CMP Cleaning. Journal of the Electrochemical Society, 2011. 158(10): p. H1052-H1056. 32. Amanapu, H.P., Sagi, K. V., Teugels, L. 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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19337 | - |
| dc.description.abstract | 本研究分三部份進行。首先探討由氫氧化鉀所調整的pH9之鹼性雙氧水系統之下之銅/釕之腐蝕電化學，接著模擬銅與釕同時在化學機械研磨情形搭配不同比例之過硫酸銨以及未添加/添加2wt%之15nm-20nm之奈米級二氧化矽在雙氧水系統之下對於表面性質之交互影響；最後觀察其表面性質；實驗中除了利用直流極化技術了解基本腐蝕電化學性質，也使用五位數的數位電子秤量測銅與釕同時經由化學機械研磨處理前後之重量差了解其研磨移除率(Material Removal Rate, MRR)進而比較銅/釕之移除選擇率，並藉由原子力學顯微鏡(Atomic Force Microscope, AFM)了解其表面粗糙度(Rq)以及使用掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)觀察其表面型態。
實驗結果顯示，藉由氫氧化鉀所調整的pH 9之鹼性雙氧水系統之下，透過電化學測量得知 7wt%的雙氧水比例可以有最大的腐蝕速率；以此為基礎進行不同比例之過硫酸銨測試，發現在7wt%的雙氧水與3wt%過硫酸銨可以有最接近1的移除選擇率，約為0.926，銅移除率約為2.305nm/sec，而釕移除率則約為2.488nm/sec；表面粗糙度的部份，銅由原先約55.8nm下降至9.12nm，釕則由約42.5nm下降到7.78nm。接續探討加入2wt%之15-20nm之奈米級二氧化矽觀察其對於移除率與表面型態之影響，發現7wt%的雙氧水與1wt%過硫酸銨搭配2wt%的15-20nm之奈米級二氧化矽可以擁有較接近1的的移除選擇率，約為0.811，銅移除率為3.457nm/sec，釕移除率為4.265nm/sec，表面粗糙度分別降為則下降至1.01nm與6.97nm；然而，若權衡所有的需求，則7wt%的雙氧水與2wt%過硫酸銨搭配2wt%的15-20nm之奈米級二氧化矽，擁有較好之成果，其選擇比為0.709，銅移除率為4.115 nm/sec，釕移除率為5.805nm/sec，其銅與釕之表面粗糙度分別能下降至6.54nm與2.06nm。 | zh_TW |
| dc.description.abstract | The study can be separated to three parts. The first part focus on probing the electrochemical factors when copper and ruthenium film reacting in different concentration of hydrogen peroxide slurries, adjusting to pH9 by sodium hydroxide. For the second part, we mimiced the real situation when copper and ruthenium film are processed during the CMP by using different concentration of ammonium persulfate in hydrogen peroxide slurries, which is adjusting to pH9 by sodium hydroxide, and then we probe the variation of their surface patterns. For the last part, we add fixed amount of 15-20nm nanoscale silica to investigate its surface patterns. In the experiment, not only we use DC polarization technique to find out its electrochemical factors, but we also use Atomic Force Microscope and Scanning Electron Microscopy to probe its root mean square surface roughness and the surface patterns.
For the results of the experiments, the first part showed that when the slurries adjusting to pH9 with sodium hydroxide, could have the best corrosion rate with 7wt% hydrogen peroxide for either copper or ruthenium film. Based on the results of the first part, we could find out that slurries with 7wt% hydrogen peroxide and 3wt% ammonium persulfate, adjusting to pH9 with sodium hydroxide, could demonstrate a better removal rate ratio, 0.926 ,of the copper/ruthenium removal rate, with the copper one was about 4.115 nm/sec and the ruthenium one was 5.805nm/sec. For the surface roughness, the copper one was declined from about 55.8nmto 9.12nm while the ruthenium one was declined from 42.5nm to 7.78nm. After adding 2wt% 15-20nm nanoscale silica, we found out that pH9 slurries with 7wt% hydrogen peroxide, 1wt% ammonium persulfate and 2wt% 15-20nm nanoscale silica, with removal rate ratio was 0.811. The copper removal rate was 3.457nm/sec and the ruthenium removal rate was 4.265nm/sec. The surface roughness was declined to 1.01nm and 6.97nm respectively. For requesting a proper result for the use of industries, the pH9 slurries with 7wt% hydrogen peroxide, 1wt% ammonium persulfate and 2wt% 15-20nm nanoscale silica would be the best choice, which removal rate ratio is 0.709, of the copper/ruthenium removal rate, with the copper one was about 4.1153nm/sec and the ruthenium one was 5.80493nm/sec. For the surface roughness, the copper one 6.54nm while the ruthenium one was 2.06nm. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T01:54:21Z (GMT). No. of bitstreams: 1 ntu-105-R03524071-1.pdf: 4866204 bytes, checksum: c042b85a5e02fb464602aba10d8fbf91 (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 口試委員會審定書……………………………………………………………………… I
摘要……………………………………………………………………………………... II Abstract………………………………………………………………………………… III 目錄…………………………………………………………………………………….. V 圖目錄………………………………………………………………………………... VII 表目錄………………………………………………………………………………….. X 第一章 緒論………………………………………………………………………… ….1 1-1簡介 1 1-2 研究動機及內容 2 第二章 文獻回顧 3 2-1化學機械研磨介紹 3 2-2銅化學機械研磨 11 2-3銅導線製程的挑戰 15 2-4應用金屬釕作為銅導線之阻障層的發展潛力 18 2-5應用研磨粒子與雙氧水搭配過硫酸銨作為研磨釕/銅導線之研磨液 19 2-6 電化學方法之基本原理介紹 21 三電極系統 21 金屬腐蝕與電化學 22 極化曲線測試法 23 第三章、研究方法 24 3-1設備、儀器、藥品及耗材 25 設備與儀器 25 藥品與耗材 25 3-2實驗方法與材料製作 27 銅片的前處理方法 27 銅基材旋轉電極之製備 28 電鍍釕沉積 29 CMP研磨實驗之溶液配置部分 30 CMP之腐蝕電化學實驗裝置與方法 31 研磨環境下之極化曲線之腐蝕電化學量測 32 CMP之移除速率實驗裝置與估算 32 AFM分析表面粗糙度 32 SEM表面型態觀察 34 第四章、結果與討論 35 4-1鹼性雙氧水系統對銅/釕化學機械研磨之實驗結果討論 35 不同比例之雙氧水研磨液對極化曲線之分析 35 4-2鹼性雙氧水-過硫酸銨系統對銅/釕化學機械研磨之實驗結果討論 40 鹼性雙氧水-過硫酸銨系統研磨液之極化曲線分析 40 鹼性雙氧水-過硫酸銨系統研磨液之機械研磨移除率分析 41 鹼性雙氧水-過硫酸銨系統研磨液之表面型態分析 41 4-3鹼性雙氧水-過硫酸銨-二氧化矽系統研磨液對銅/釕CMP實驗討論 55 鹼性雙氧水-過硫酸銨系統研磨液加二氧化矽之極化曲線之分析 55 鹼性雙氧水-過硫酸銨系統研磨液加二氧化矽之研磨移除率分析 56 鹼性雙氧水-過硫酸銨系統研磨液加二氧化矽之表面粗糙度分析 57 第五章、結論 70 參考文獻 72 | |
| dc.language.iso | zh-TW | |
| dc.title | 在鹼性雙氧水系統中過硫酸銨與奈米級二氧化矽對銅/釕之化學機械研磨研究 | zh_TW |
| dc.title | Study of Copper / Ruthenium Chemical Mechanical Polishing in alkaline hydrogen peroxide system with ammonium persulfate and nanoscale silica | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 周偉龍,蔡子萱,吳永富 | |
| dc.subject.keyword | 銅,釕,電沉積,化學機械研磨,表面粗糙度,移除選擇率, | zh_TW |
| dc.subject.keyword | copper,ruthenium,electrochemical deposition,CMP,removal rate ratio, | en |
| dc.relation.page | 76 | |
| dc.identifier.doi | 10.6342/NTU201600453 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2016-07-15 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
| 顯示於系所單位： | 化學工程學系 | |
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