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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19119完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳焜裕(Kuen-Yuh Wu, Ph.D.) | |
| dc.contributor.author | Chuan-Lun Hsu | en |
| dc.contributor.author | 徐川崙 | zh_TW |
| dc.date.accessioned | 2021-06-08T01:45:39Z | - |
| dc.date.copyright | 2016-08-26 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-08-12 | |
| dc.identifier.citation | 參考文獻
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(2012) Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats. Toxicol. Appl. Pharmacol., Def SCI J, Vol . 62, No. 2, March 2012 102 2009, 240(2), 236-44. 61. Mast TJ, Greenspan BJ, Dill JA, et al. (1990). Inhalation developmental toxicology studies: gallium arsenide in mice and rats. Final Report. NTIS Technical Report (NTIS/DE91 005300). Richland, WA: Pacific Northwest Laboratory. 62. Omura, M., Tanaka, A., Zhao, M., Hirata, M., Makita, Y., Inoue, N., Gotoh, K., (1995).Toxic effects of gallium arsenide on sperm in rats by repeated intratracheal instillations. Sangyo Eiseigaku Zasshi (J. Occup. Health) 37, 165–166. 63. Omura, M., Tanaka, A., Hirata, M., Zhao, M., Makita, Y., Inoue, N., Gotoh, K., Ishinishi,N., (1996a). Testicular toxicity of gallium arsenide, indium arsenide, and arsenic oxide in rats by repetitive intratracheal instillation. Fundam. Appl. Toxicol. 32,72–78. 64. Omura, M., Hirata, M., Tanaka, A., Zhao, M., Makita, Y., Inoue, N., Gotoh, K., Ishinishi,N.,( 1996b). Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters. Toxicol. Lett. 16, 123–129. 65. NTP. (2000). Technical report on the toxicology and carcinogenesis of gallium arsenide in F344/N rats and B6C3F1 mice (inhalation studies), NTP TR 492. 66. TOXNTE:CCRIS(GALLIUM ARSENIDE) http://toxnet.nlm.nih.gov/cgi-bin/sis/search2/r?dbs+ccris:@term+@rn+1303-00-0:@odhsdb@/cgi-bin/sis/search2/f?./temp/~HCzdk0:3@ 67. 黃耀輝(2007) ,半導體業員工作業環境金屬暴露— 離子植入機台維修工程師之砷暴露,行政院國家科學委員會專題研究計畫成果報告,計畫編號：NSC 87-2314-B-002-348 68. 台灣精碳有限公司http://www.green-living.com.tw/product_133673.html | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19119 | - |
| dc.description.abstract | 砷化鎵目前廣泛是用於微電子工業上，當員工參與砷化鎵晶體的切割、研磨及製程噴砂、清潔時就有可能暴露於砷化鎵的微粒當中。
本研究針對半導體產業中四元LED晶粒製程作業員工暴露於砷化鎵微粒的健康風險評估，藉由健康風險評估的危害鑑定(Hazard Identification)，劑量反應關係評估(Dose-respones assessment)，暴露評估(Exposure Assessment)與風險特性化(Risk Characterization) 四個主要步驟來執行。在慢性毒性研究中發現母大鼠在暴露砷化鎵微粒0.1mg/m³及1 mg/m³時，有肺泡/支氣管癌的產生。以此濃度換算成劑量後輸入至基準計量模式(BMDL)中進行推估，推估的結果為得到為0.02 mg/kg-bw/day，動物的CSF為5 (mg/kg/day)-1。由於動物呼吸與人類呼吸有差異，以物種間的外插10，人敏感度間的外插10，以100 代入，其人類CSF為0.05(mg/kg/day)-1。 經了解現場晶粒製造的流程及現場作業觀察後，以刻字作業及四元切割作業進行環境定點及個人採樣，作為暴露劑量的模擬，以模擬結果估算致癌風險。推估後結果晶粒製程區(以砷及鎵暴露)癌症風險為6.15*10-7；單以刻字站的致癌風險值為3.91*10-9，四元切割站的致癌風險則為1.23*10-6；單以砷的致癌風險值6.97*10-8，鎵的致癌風險值為1.03*10-7，為皆小於職業風險可接受10-4的範圍。 | zh_TW |
| dc.description.abstract | Gallium arsenide is widely used in the microelectronics industry; workers involved in the cutting, grinding, sandblasting, and cleaning of gallium arsenide wafers may be exposed to gallium arsenide particles, leading to health hazards.
This study targeted the health risk assessment of semiconductor industry workers’ exposure to gallium arsenide particles from the manufacture of AlGaInP Light Emitting Diode (LEDs) chips. The health risk assessment process was conducted in four main parts: hazard identification, dose-response assessment, exposure assessment, and risk characterization. Chronic toxicity study found female rats developing alveolar and bronchial cancer when exposed to 0.1 mg/m3 and 1 mg/m3. The concentrations from chronic inhalation studies by NTP (2000) were converted to dosages and entered in the Benchmark Dose software for asssessment; the resulting estimation was 0.02 mg/kg-bw/day with a cancer slope factor (CSF) of 5(mg/kg/day)-1. To account for animal and human inhalation differences, a total uncertainty factor of 100 from inter-species extrapolation factor of 10 and human sensitivity factor of 10 was assigned. The resulting reference concentration and cancer slope factor (CSF) of gallium arsenide in human was 0.05(mg/kg/day)-1. After a walkthrough survey, lithography stations and AlGaInP trimming sations were selected to collect short-term environmental samples to assess workers’ chronic exposure. The calculated cancer risk of exposure to gallium arsenide from working at the manufacturing process was 6.15*10-7; the cancer risk of working at lithography station was 3.91*10-9; AlGaInP trimming station was 1.23*10-6. The cancer risks of exposure to arsenic and gallium were 6.97*10-8 and 1.03*10-7, respectively. The risks were all within the acceptable threshold for occupational risk of10-4. | en |
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| dc.description.tableofcontents | 目錄
致謝………………………………………………………………………I 中文摘要…………………………………………………………………II 英文摘要………………………………………………………………III 圖目錄 ………………………………………………………………VIII 表目錄…………………………………………………………………IX 縮寫目錄………………………………………………………………X 第一章 導論 1 1.1實習單位簡介與實習狀況 1 1.1.1實習單位簡介 1 1.1.2 實習狀況 1 1.2 研究背景及架構 2 1.2.1 研究背景 2 1.2.2 研究架構 3 1.3文獻回顧 4 1.3.1 砷化鎵於LED製程 4 1.3.2 砷化鎵職業暴露 6 1.3.3 砷化鎵物理化學特性 8 1.3.4 砷化鎵的生物代謝 8 1.3.5基因毒性 12 1.3.6雄性生殖毒性 14 1.3.7突變性研究 15 1.3.8 急性毒性研究 15 1.3.9亞慢性毒性研究 16 1.3.10慢性毒性研究 18 1.3.11流行病學 19 1.3.12 研究目的與研究問題 19 第二章 研究方法 20 2.1危害鑑定(Hazard Identification) 20 2.2劑量反應關係評估(Dose-response assessment) 20 2.2.1預定假設 20 2.2.2外插 20 2.2.3優先資料選擇 21 2.2.4傳統的劑量反應關係方法 21 2.2.5 致癌性的劑量反應關係評估 22 2.3暴露評估(Exposure Assessment) 22 2.3.1暴露情境 23 2.3.2 採樣流程 25 2.3.3採樣點評估 25 2.3.4設備與材料 28 2.3.5 濾紙的調理與稱重 28 2.3.6皂泡計(bubble meter) 29 2.3.7個人採樣 29 2.3.8 區域定點採樣 30 2.3.9 ICP-MS感應耦合電漿質譜分析儀 30 2.3.10 蒙地卡羅算法 31 第三章 結果 32 3.1劑量反應關係 32 3.1.1目的 32 3.1.2 資料來源 32 3.1.3 動物實驗內容 32 3.1.4 動物實驗結果 32 3.1.5砷化鎵基準劑量模式評估 32 3.1.6致癌性劑量反應關係 34 3.2暴露評估 34 3.2.1癌症風險之估算 35 3.2.2 OpenBUGS機率風險概估 36 3.3 不確定性分析 40 3.4 風險特性化 40 第四章 討論 43 4.1 採樣物質的致癌風險 43 4.2站點的致癌風險 43 第五章 結論及建議 44 參考文獻 45 附錄 53 圖目錄 圖1 研究架構 4 圖2 LED廠現場作業流程 6 圖3 毒性的症狀總結 11 圖4 砷化鎵毒性機轉 12 圖5 採樣流程圖 25 圖6 個人採樣設置 30 圖7 區域定點採樣設置 30 圖8 Multistage模式推估NPT(2000)砷化鎵BMDL結果圖 34 圖9 以砷及鎵濃度看砷化鎵的濃度密度 37 圖10 以砷及鎵濃度MCMC幾何平均數的收斂 37 圖11 以鎵濃度來看砷化鎵的濃度密度 38 圖12 以鎵濃度MCMC幾何平均數的收斂 38 圖13 以砷濃度來看砷化鎵的濃度密度 38 圖14 以砷濃度MCMC幾何平均數的收斂 39 表目錄 表1 各國職業暴露限值(REL) 2 表2 砷化鎵發育毒性研究 13 表3 砷化鎵雄性生殖毒性研究 14 表4 砷化鎵突變性研究 15 表5 砷化鎵急性毒性研究 15 表6 砷化鎵亞慢性毒性研究 17 表7 砷化鎵慢性毒性研究 18 表8 各站作業員工作業說明 26 表9 NTP 2000兩年實驗各濃度轉換結果 33 表10 基準劑量二分法行個模式對NTP(2000)砷化鎵動物吸入實驗參數推估肺泡/支氣管癌結果比較 33 表11 採樣結果 35 表12 各站Cancer risk結果 36 表13 以砷及鎵採樣數據進行晶粒製程砷化鎵暴露的估計 36 表14 以鎵採樣數據進行晶粒製程區砷化鎵暴露的估計 37 表15 以砷採樣數據進行晶粒製程區砷化鎵暴露的估計 38 表16 國際砷物質相關的風險規範 39 表17 以EPA每單位風險計算致癌風險結果 40 表18 砷及鎵物質莫耳數計算 43 | |
| dc.language.iso | zh-TW | |
| dc.subject | 貝氏定理軟體 | zh_TW |
| dc.subject | 砷化鎵 | zh_TW |
| dc.subject | 健康風險評估 | zh_TW |
| dc.subject | 晶粒製程 | zh_TW |
| dc.subject | 致癌風險 | zh_TW |
| dc.subject | chip manufacturing process | en |
| dc.subject | Gallium arsenide | en |
| dc.subject | OpenBUGS | en |
| dc.subject | cancer risk | en |
| dc.subject | health risk assessment | en |
| dc.title | 光電半導體產業晶粒製程區砷化鎵健康風險評估 | zh_TW |
| dc.title | Health risk assessment of Gallium Arsenide (GaAs)
in Taiwanese Optoelectronic Semiconductor Industry | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 黃耀輝(Yaw-Huei Hwang, Ph.D.) | |
| dc.contributor.oralexamcommittee | 李文亮,余清其 | |
| dc.subject.keyword | 砷化鎵,健康風險評估,晶粒製程,致癌風險,貝氏定理軟體, | zh_TW |
| dc.subject.keyword | Gallium arsenide,health risk assessment,chip manufacturing process,cancer risk,OpenBUGS, | en |
| dc.relation.page | 60 | |
| dc.identifier.doi | 10.6342/NTU201602263 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2016-08-12 | |
| dc.contributor.author-college | 公共衛生學院 | zh_TW |
| dc.contributor.author-dept | 公共衛生碩士學位學程 | zh_TW |
| 顯示於系所單位： | 公共衛生碩士學位學程 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-105-1.pdf 未授權公開取用 | 1.72 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。