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標題: | 應用於5G毫米波發射機之20.8-41.6-GHz功率放大器與可調式鏡像抑制升頻器設計 Design of A 20.8-41.6-GHz Power Amplifier and A Tunable Image-Rejection Up-Converter for 5G MMW Transmitter Development |
作者: | Chieh-Wei Wang 王捷葦 |
指導教授: | 黃天偉(Tian-Wei Huang) |
關鍵字: | 互補式金屬氧化物半導體,功率放大器,寬頻,Ka頻帶,升頻器,第五代行動通訊, CMOS,Power amplifier,wideband,Ka-band,up-converter,5G mobile communication, |
出版年 : | 2020 |
學位: | 碩士 |
摘要: | 本論文包含三個部分,三者皆由互補式金氧半場效電晶體製成實現。第一部份是應用於毫米波第五代無線通訊系統的寬頻功率放大器,使用28奈米製程設計。第二部份是Ka波段的可調式鏡像抑制升頻器,利用180奈米製程製作。最後一部份是應用於28 GHz的功率放大器,以28奈米製程實現此設計,討論量測時發生非預期之振盪現象。 論文的第一部份,提出了一個應用於毫米波第五代行動通訊之寬頻且以變壓器為根基之差動功率放大器,以28奈米HPC-plus CMOS製作。功率輸出級與驅動級放大器皆偏壓在靠近class AB,以降低線性功率區之直流功率消耗,並提供更線性的操作以更接近此功率放大器之輸出飽和功率。在輸出匹配網路中,使用了帶有兩個耦合共振電容之變壓器以達到寬頻功率匹配。此電路在23 GHz達到小訊號增益最大值20.4-dB,3-dB小訊號頻寬為20.8到41.6 GHz,涵蓋多個5G頻段;此電路在30 GHz的頻率下提供了16.1-dBm的輸出飽和功率,且輸出飽和功率的1dB增益頻寬為23到38.5 GHz。此外,本功率放大器於25 GHz呈現35 %的峰值功率附加效率;於41 GHz提供13-dBm的輸出功率的增益1dB壓縮點。在調變量測使用64-QAM OFDM的信號下,此功率放大器分別在23與41 GHz處達到7.2/6.9-dBm的平均輸出功率和8.5%/8.8%的平均功率附加效率,且方均根的EVM小於-25dB。 在第二部份呈現了一顆使用0.18-μm CMOS製程Ka波段的升頻器。在電路中所加入的調節機制在特定頻率可改善鏡像抑制比例。使用固定的100 MHz基頻頻率的狀況下,此升頻器在28 GHz達到-11.5 dB之轉換增益且1-dB轉換增益頻寬為26 GHz到32 GHz。此外,在LO功率為10-dBm的條件下,LO到RF的隔離度高於59 dB且輸出功率增益1dB壓縮點為 -4.9-dBm。在25到28 GHz的RF頻率中,鏡像抑制比例高於20-dB,其中峰值在26 GHz為28.5-dB。 在最後一部份探討共模穩定度,利用偏壓線與時域模擬來預測不穩定與振盪現象。串聯電阻加在偏壓線上可使差動對在共模狀態中穩定,同時又不使差動狀態表現劣化。在此提出的兩個功率放大器皆由帶有中性電容的一級共源級架構組成,此中性電容可提升差模狀態時的穩定度,但卻造成共模狀態之不穩定現象。穩定度分析用於兩個28 GHz的功率放大器並透過量測結果來驗證。在沒有閘極旁路電容且確認沒有震盪的功率放大器中,在28 GHz的頻率達到14.2-dB的最高小訊號增益,16.1-dBm的大訊號飽和輸出功率,且此時之峰值功率附加效率為38%,並達到12.6-dBm之輸出功率1dB增益壓縮點。在64-QAM OFDM調變訊號測試底下,本功率放大器在EVM為-25 dB的條件下達到5.3-dBm的平均輸出功率與8.6%的平均功率附加效率。 This thesis consists of three parts. These three parts are all realized in CMOS process. The first part is a broadband power amplifier designed in 28-nm CMOS process applied for the fifth generation wireless communication system. The second part is a tunable image-rejection up-converter in Ka-band implemented in 180-nm CMOS process. The last part is two 28-GHz power amplifiers realized in 28-nm CMOS process. An unexpected oscillation occurs during measurement would be discussed. In the first part of the thesis proposes a wideband transformer-based power amplifier applicable for the millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power amplifier is manufactured in 28-nm HPC-plus CMOS process. The power stage and driver stage amplifiers are biased in deep class-AB to reduce the dc power dissipation in the linear power region and provide a linear operation close to the saturated output power (PSAT) of the PA. In the output matching network, a transformer with two coupled resonant capacitors is designed for broadband power matching. The proposed PA achieves the peak small-signal power gain (Gp) of 20.4-dB at 23 GHz and a measured 3dB small-signal gain bandwidth (BW3dB) from 20.8 to 41.6 GHz covering the multiple 5G bands. The measured PSAT is 16.1-dBm at 30 GHz with over 50% PSAT output power 1dB bandwidth (BW1dB) from 23 to 38.5-GHz. Also, this PA reports a 35% peak power added efficiency (PAEMAX) at 25 GHz and a 13-dBm peak OP1dB at 41 GHz. In the 64-QAM OFDM modulated signal measurement, this power amplifier obtains an output power of 7.2/6.9-dBm and a modulated PAE of 8.5%/8.8% at 23 and 41-GHz respectively when keeping the EVM below -25 dBc. In the second part presents a Ka-band tunable image-rejection up-converter implemented in 0.18-μm CMOS process. The tunable mechanism added in the circuits improves the performances of image-rejection-ratio at a specific frequency. The proposed up-converter achieves a measured peak conversion gain of -11.5-dB at 28 GHz while the 1-dB conversion gain bandwidth is 26 GHz to 32 GHz at a fixed IF frequency of 100-MHz. Besides, it attains the LO-to-RF isolation better than 59-dB and OP1dB of -4.9-dBm with LO power of 10-dBm. The image-rejection ratio is better than 20 dB for RF frequency from 25 to 28 GHz with a peak value of 28.5 dB at 26 GHz. In the last part, the analysis of common mode stability behavior is demonstrated. The bias-line and the time-domain simulation are used to predict the instability and oscillations. A series resistor is added in the bias line to stabilize the differential pair in common mode without degradation in differential mode performance. The proposed two PAs consist of one common-source stage with neutralized capacitors to improve better performance of stability in differential mode. However, the mechanism causes instability in common mode. The stability analysis is applied to two 28-GHz PAs and verified through the measurement result. The proposed PA without gate bypass confirming no oscillation achieves a peak small-signal gain of 14.2 dB, Psat of 16.1-dBm with peak PAE of 38% and OP1dB of 12.6-dBm. The average Pout/PAE at 28 GHz are achieved 5.3 dBm/8.6% when a 64-QAM OFDM modulated signal with 400 MHz RF bandwidth is applied under an EVM of -25 dBc. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19021 |
DOI: | 10.6342/NTU202003870 |
全文授權: | 未授權 |
顯示於系所單位: | 電信工程學研究所 |
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