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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18834完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳俊維(Chun-Wei Chen) | |
| dc.contributor.author | Yi-Ting Liou | en |
| dc.contributor.author | 劉宜婷 | zh_TW |
| dc.date.accessioned | 2021-06-08T01:29:36Z | - |
| dc.date.copyright | 2014-09-04 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-07-28 | |
| dc.identifier.citation | [1] Peierls, R. In Quelques proprietes typiques des corps solides, Annales de l'institut Henri Poincare, Presses universitaires de France: 1935; pp 177-222.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18834 | - |
| dc.description.abstract | 石墨烯為一獨立的二維材料，擁有許多特別的性質。得益於此單原子層結構的石墨烯非常敏感，容易被化學摻雜物修飾。除了可調控的功函數之外，其高穿透度及高導電性，在蕭基接面太陽能電池領域成為極具潛力可取代金屬電極的材料。
在此論文的第一部分，我們應用一雙面修飾的方法試圖調控石墨烯的兩個表面。以金奈米粒子修飾石墨烯底面可改善石墨烯與矽基板的接觸，兼之上表面以TFSA分子進行化學摻雜。最後經雙面修飾的石墨烯製成的石墨烯與矽蕭基接面太陽能電池達到了11.8%的高光電轉換效率。在第二部分，我們開發了一種奠基於簡單氧化還原反應及溶劑製程的方法，能夠以金粒子填補石墨烯裂縫及破洞。金填補過後的石墨烯用於蕭基接面太陽能電池，加上TFSA分子化學摻雜後，達到了目前此結構無抗反射技術的最高效率12.2%，且其高填充因子（78.8%）甚至近於傳統p-n接面太陽能電池的表現。 | zh_TW |
| dc.description.abstract | Graphene, a free-standing 2D material, has a lot of special properties. Benefitting by this single-atom-layer structure, the graphene film is very sensitive, possessing the potential to be modified with chemical dopants. Besides the tunable work function, its high transparency and conductivity make it a promising material to replace metal electrode in Schottky junction solar cell.
In the first part of this thesis, a method of bifacial modification is applied to play with the two surface of graphene. With modifying the bottom side of graphene with gold nanoparticles, the contact between graphene and silicon can be improved. Then along with top doping by bis(trifluoromethanesulfonyl)amide (TFSA), the two surfaces of graphene can both be treated. The final bifacially modified device reaches a high power conversion efficiency (PCE) of 11.8%. In the second part, a solution method based on simple oxidation-reduction reaction is derived to fill the cracks of graphene with gold particles. The PCE of Au-filled graphene-Si Schottky junction photovoltaic with TFSA doping reaches the highest value (12.2%) of this junction without antireflection technique to date, and its high fill factor (78.8%) is even close to the performance of conventional silicon p-n junction solar cell. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T01:29:36Z (GMT). No. of bitstreams: 1 ntu-103-R01527038-1.pdf: 7430300 bytes, checksum: bcbf06afa3e9d5bf164bed7a72f5ad8f (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 口試委員會審定書 I
ACKNOWLEDGEMENT i 中文摘要 iii ABSTRACT iv CONTENTS v LIST OF FIGURES viii LIST OF TABLES xii LIST OF PUBLICATIONS xiii Chapter 1 Introduction 1 1.1 Graphene 1 1.1.1 Brief history of graphene 1 1.1.2 Band structure of graphene 2 1.2 Schottky Junction 5 1.2.1 Metal-silicon Schottky junction 6 1.2.2 Graphene-silicon Schottky junction 7 1.3 Research Motivation 9 Chapter 2 Literatures Review 10 2.1 Chemical Doping of Graphene 10 2.1.1 Substitutional doping 10 2.1.2 Surface transfer doping 11 2.2 Graphene-Silicon Schottky Junction 13 2.2.1 Doping graphene to enhance the barrier height 14 2.2.2 Band engineering between graphene and silicon 15 2.2.3 Anti-reflection technique 17 2.3 Summary 18 Chapter 3 Methods 20 3.1 Chemical Vapor Deposition (CVD)-Grown Graphene 20 3.1.1 Synthesis of CVD graphene 20 3.1.2 Transfer process of CVD graphene 22 3.1.3 Characterization of Graphene 23 3.1.3.1 Optical microscopy images and transparency 23 3.1.3.2 Electronic properties of graphene 25 3.1.3.3 Raman spectrum of graphene 29 3.1.3.4 Scanning electron microscope and Auger mapping 30 3.2 Graphene-Silicon Schottky Solar Cell 32 3.2.1 Fabrication of Graphene-Silicon Schottky Solar Cell 32 3.2.2 Characterization of solar cells 34 3.2.2.1 Air mass 1.5 solar spectrum 34 3.2.2.2 Current-voltage characteristic of solar cell 36 Chapter 4 Graphene-Silicon Schottky Solar Cell with Bifacially-modified Graphene 38 4.1 Introduction 38 4.2 Fabrication of bifacially-modified graphene-Si Schottky Solar Cell 40 4.3 Results and Discussion 42 4.3.1 Characteristics of bifacially modified graphene 42 4.3.1.1 Bottom modification: Au nanoparticles 42 4.3.1.2 Top doping: bis(trifluoromethanesulfonyl)amide (TFSA) 43 4.3.2 Device performances 44 4.4 Summary 47 Chapter 5 Graphene-Silicon Schottky Solar Cell with a Gold-Filled Graphene Film 48 5.1 Introduction 48 5.2 Fabrication of Au-Filled Graphene-Si Schottky Solar Cell 50 5.3 Results and Discussion 54 5.3.1 Characterization of Au-Filled Graphene 54 5.3.1.1 Optical microscopy and Raman spectroscopy 54 5.3.1.2 Scanning electron microscopy and Auger mapping 56 5.3.1.3 Sheet resistance and optical transmittance 58 5.3.2 Device performances 61 5.4 Summary 65 Chapter 6 Conclusions 66 Chapter 7 Recommendations 67 REFERENCE 68 | |
| dc.language.iso | en | |
| dc.title | 化學修飾石墨烯與矽之蕭基接面高效率光伏元件 | zh_TW |
| dc.title | Chemically Modified Graphene-Silicon Schottky Junction Photovoltaics with High Performances | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 莊東漢(Tung-Han Chuang),溫政彥(Cheng-Yen Weng),邱雅萍(Ya-Ping Chiu) | |
| dc.subject.keyword | 石墨烯,蕭基接面,光伏元件, | zh_TW |
| dc.subject.keyword | graphene,Schottky,photovoltaic, | en |
| dc.relation.page | 75 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2014-07-28 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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