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標題: | 銅銦鎵硒太陽電池之硫化鎘緩衝層材料製備與特性分析 Preparation and Characterization of Cadmium Sulfide Buffer layers Used in Cu(In,Ga)Se2 Solar Cells |
作者: | Ming-Ching Chen 陳明慶 |
指導教授: | 呂宗昕(Chung-Hsin Lu) |
關鍵字: | 太陽電池,銅銦鎵硒,熱退火,微波,化學水浴沉積, solar cells,u(In,Ga)Se2,post-annealing,microwave,chemical bath deposition, |
出版年 : | 2014 |
學位: | 碩士 |
摘要: | 本研究第一部分為應用在銅銦鎵硒(Cu(In,Ga)Se2)太陽電池的硫化鎘(CdS)薄膜進行熱退火處理。CdS薄膜經過退火之後由於結晶性增加及薄膜緻密化,薄膜的電性獲得改善。熱退火處理使得CdS薄膜呈現緻密的結構,因此導致穿透度下降。此外,當熱退火處理進行時,Cu(In,Ga)Se2太陽電池的光電性質獲得改善。這是因為由於額外的短路所造成的電子電洞對再結合被抑制。
本研究第二部分經由微波輔助化學水浴沉積法,成功地在縮短的反應時間內製備CdS薄膜。在低的硫脲對硫酸鎘莫耳比例([TU]/[CdSO4])時,緻密的CdS薄膜在Cu(In,Ga)Se2吸收層上形成。隨著[TU]/[CdSO4]莫耳比例增加,孔洞在CdS薄膜上形成而且薄膜厚度減少。Cu(In,Ga)Se2太陽電池的光電性質因為[TU]/[CdSO4]莫耳比例的變化而受到影響。當[TU]/[CdSO4]莫耳比例較少時由於電子電洞再結合被抑制,因此可以獲得相對高的Cu(In,Ga)Se2太陽電池轉換效率。 The annealing process was applied as the post-annealing treatment for cadmium sulfide (CdS) films used in Cu(In,Ga)Se2 solar cells in Chapter 2. As the thermal annealing was carried out for CdS films, the resistivity and carrier concentration were improved due to the increase in the crystallinity and the densification of films. CdS films exhibited dense structures after the thermal annealing, leading to the variation in the optical transmittance. In addition, the performance of Cu(In,Ga)Se2 solar cells was influenced after the annealing process for CdS buffer layers. The improvement in the performance of Cu(In,Ga)Se2 solar cells was due to the suppression of electron-hole recombination resulting from the additional shunt paths. In Chapter 3, CdS films were successfully synthesized via the microwave-assisted chemical bath deposition process in a short reaction period. As the molar ratio of thiourea to cadmium sulfide ([TU]/[CdSO4] molar ratios) were low, compact CdS films were formed on Cu(In,Ga)Se2 absorbers. Upon elevating the [TU]/[CdSO4] molar ratios, holes were formed on CdS films. The photovoltaic properties of Cu(In,Ga)Se2 solar cells were influenced by the different [TU]/[CdSO4] molar ratios. When the [TU]/[CdSO4] molar ratio was low, a relatively high efficiency was achieved due to the suppression of electron-hole recombination. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18652 |
全文授權: | 未授權 |
顯示於系所單位: | 化學工程學系 |
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