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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳俊顯(Chun-hsien Chen) | |
| dc.contributor.author | Ting-Yun Chen | en |
| dc.contributor.author | 陳廷芸 | zh_TW |
| dc.date.accessioned | 2021-06-08T01:11:10Z | - |
| dc.date.copyright | 2014-08-26 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-08-16 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18549 | - |
| dc.description.abstract | 分子接合點(molecular junctions)是由「電極-分子-電極」所構成，此為分子電性量測的基本架構。量測分子接合點所獲取的I-V曲線，其d2I/dV2-V曲線稱為非彈性電子穿隧能譜(inelastic electron tunneling spectra，IETS)，此能譜源自於分子接合點中的分子振動，可與分子振動光譜相互對應，因此IETS技術可檢驗分子是否存在於分子橋接系統中，用以研究分子導電性與非彈性電子穿隧現象。本論文以黃光及電子束微影技術製作具有奈米金線的元件，搭配電遷徙(electromigration)技術形成奈米等級的裂縫，作為可供分子架接之分子電性量測平台。本論文嘗試建構IETS電路系統，以鎖相放大器(lock-in amplifier)直接擷取dI/dV、d2I/dV2資訊，相較於數學微分所得的dI/dV、d2I/dV2，由鎖相放大器擷取的資訊具有較高的訊雜比，可提供解析度較好的IETS能譜。本實驗室先前的IETS電路系統之軟體無法整合系統所需之數部儀器，導致無法準確控制數據之取點速率，且鎖相放大器參數設定不佳，導致IETS能譜的解析度不足。目前的IETS電路系統改以整合性軟體控制所有儀器，得以準確控制數據之取點速率，提升d2I/dV2的訊雜比，取得具有明顯譜峰的IETS能譜。藉由目前的系統取得之單壁奈米碳管的IETS能譜具有明顯譜峰，且可與振動光譜指認，並藉由IETS譜峰變寬的現象證實能譜的確由IETS訊號所貢獻。然而，1,4-丁二硫醇的IETS能譜僅部分譜峰得以與文獻指認，仍有部分譜峰無法指認，推測是受雜訊或是分子接合點構型不同之影響，使得譜峰能量位置與分子振動光譜的振動模式比對仍有差異。 | zh_TW |
| dc.description.abstract | The study on charge transport through an MMM junction (metal-molecule-metal) is a fundamental method for investigation into molecular electronics. The second derivatives of the current-voltage curves yield inelastic electron tunneling spectroscopy (IETS). IETS originates from the excitation of the vibrational modes when electrons tunnel through a molecular junction. With vibrational modes consistent with Raman and infrared spectra, IETS provides spectroscopic evidence for the presence of molecules at the junctions. The devices are fabricated by photolithography and e-beam lithography, followed by electromigration technique. To obtain IETS of molecular junctions, the IETS circuit system is established with two lock-in amplifiers to acquire dI/dV and d2I/dV2 data directly from first and second harmonic signals. The signals obtained with lock-in amplifiers have better signal-to-noise ratios than those obtained numerically. The IETS circuit system is amended to improve the signal-to-noise ratio by integrating all required techniques in a customized program. The prominent peaks in the IETS of single-walled carbon nanotubes (SWNTs) obtained with the system can be assigned with the Raman spectra. However, not all of the peaks in the IETS of 1,4-butandithiol are consistent with reported IETS. It is presumed that the discrepancy comes from the noise and the geometry of the molecular junctions. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T01:11:10Z (GMT). No. of bitstreams: 1 ntu-103-R01223181-1.pdf: 7669081 bytes, checksum: f3d28b4cc62c9fcf576b1f3404f6a2f3 (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 中文摘要 .................................................................................................................... i
ABSTRACT .................................................................................................................. ii 目錄 .................................................................................................................. iii 圖目錄 ................................................................................................................... v 表目錄 ................................................................................................................. vii 第一章 緒論 ........................................................................................................... 1 1.1 前言 ........................................................................................................... 1 1.2 分子電性的量測 ....................................................................................... 1 1.2.1 機械式破裂接合法 ....................................................................... 1 1.2.2 掃描式穿隧顯微術 ....................................................................... 3 1.2.3 掃描式穿隧顯微破裂接合法 ....................................................... 5 1.2.4 I(s)及I(t)技術量測法 ................................................................... 7 1.2.5 導電原子力顯微術 ....................................................................... 9 1.2.6 觸覺感應回饋式導電原子力顯微術 ......................................... 12 1.2.7 電遷徙誘發破裂接合量測法 ..................................................... 13 1.3 非彈性電子穿隧能譜 ............................................................................. 16 1.4 研究動機 ................................................................................................. 26 第二章 實驗部分 ................................................................................................. 28 2.1 藥品、耗材及儀器 ................................................................................. 28 2.1.1 藥品與耗材 ................................................................................. 28 2.1.2 儀器 ............................................................................................. 29 2.2 量測元件的製備 ..................................................................................... 29 2.2.1 對準圖案的設計與製程 ............................................................. 32 2.2.2 金奈米線的設計與製程 ............................................................. 33 2.2.3 接觸電極的設計與製程 ............................................................. 34 2.2.4 量測元件載台的製作 ................................................................. 35 2.2.5 超音波焊線(ultrasonic wire bonding) ........................................ 38 iv 2.3 測量過程及測量系統的架設 ................................................................. 39 2.3.1 電遷徙效應及分子接合點的產生 ............................................. 39 2.3.2 量測系統的架設 ......................................................................... 40 2.3.3 非彈性穿隧能譜的量測方法 ..................................................... 44 2.3.4 影響非彈性穿隧能譜解析度的因素 ......................................... 47 第三章 結果與討論 ............................................................................................. 50 3.1 分子元件製作結果 ................................................................................. 50 3.2 IETS系統架設的測試 ............................................................................ 51 3.2.1 SWNTs樣品製備 ........................................................................ 53 3.2.2 SWNTs的IETS量測結果 ......................................................... 56 3.2.3 IETS量測系統之訊號確認 ........................................................ 59 3.3 1,4-丁二硫醇的IETS量測結果 ............................................................ 61 第四章 結論 ......................................................................................................... 67 參考文獻 ................................................................................................................. 68 附錄 ................................................................................................................. 74 | |
| dc.language.iso | zh-TW | |
| dc.title | 分子電性量測平台：微影製程與電遷徙之製作及其非彈性電子穿隧能譜 | zh_TW |
| dc.title | Electromigration-Fabricated Molecular Junctions and the Instrumentation for Inelastic Electron Tunneling Spectroscopy | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 彭旭明(Shie-Ming Peng),金必耀(Bih-Yaw Jin),陳益佳(I-Chia Chen) | |
| dc.subject.keyword | 分子電性,電遷徙,非彈性電子穿隧能譜,硫醇, | zh_TW |
| dc.subject.keyword | molecular electronics,electromigration,inelastic electron tunneling spectroscopy, | en |
| dc.relation.page | 76 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2014-08-17 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 化學研究所 | zh_TW |
| 顯示於系所單位： | 化學系 | |
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| ntu-103-1.pdf 未授權公開取用 | 7.49 MB | Adobe PDF |
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