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Title: | 使用原子層沉積技術成長氮化鋁與氮化鎵薄膜之研究 Study of the AlN and GaN Thin Films Grown by Atomic Layer Deposition |
Authors: | Yung-Chuan Chuang 莊詠荃 |
Advisor: | 林新智(Hisn-Chih Lin),陳敏璋(Miin-Jang Chen) |
Keyword: | 原子層沉積技術,退火,氮化鋁,III-族氮化物緩衝層,有機金屬化學氣相沉積, atomic layer deposition (ALD),annealing,aluminum nitride (AlN),III-nitrides,buffer layer,Metal Organic Chemical Vapor Deposition (MOCVD), |
Publication Year : | 2015 |
Degree: | 碩士 |
Abstract: | 本論文乃利用原子層沉積(Atomic Layer Deposition, ALD)技術成長氮化鋁薄膜和氮化鋁與氮化鎵多層結構作為氮化鎵磊晶層之緩衝層,並分析其各項性質和相關應用。論文主要分為兩個部分:本論文第一部分使用ALD技術成長氮化鋁薄膜於(002)藍寶石基板及(111)矽基板上,調整各項製程參數,並利用多種分析技術量測氮化鋁薄膜的各項性質,發現氮化鋁薄膜為六方晶纖鋅礦(hexagonal wurtzite)結構,利用退火的方式使薄膜結晶,其基面的繞射峰,和搖擺曲線顯示出晶體具有高擇優取向性,從拉曼的訊號得知氮化鋁薄膜具有殘留拉應力,而AFM影像顯示氮化鋁薄膜具有良好的表面平整度,平均粗糙度都小於1nm。第二部分,本論文使用ALD技術於藍寶石基板上成長氮化鋁薄膜作為緩衝層,並觀察其對氮化鎵磊晶層結晶品質的影響。發現氮化鎵磊晶層有好的結晶度與擇優取向性,表示ALD薄膜能夠促進磊晶層的結晶品質。 In this thesis the properties and applications of AlN thin films prepared by atomic layer deposition (ALD) were investigated. It can be divided into two main sections:In the first part, we investigated the influence of the ALD parameters on the crystallinity of AlN thin films grown on different substrates. According to XRD pattern, improved crystallinity of AlN (wurtzite structure) was achieved at high deposition temperature. The Raman spectrum indicates a shift towards lower wavenumber caused by residual tensile stress The AFM scanning images shows a flat surface of AlN with a roughness smaller than 1 nm. In the next section, AlN thin films prepared by ALD were grown on sapphire substrate to serve as the buffer layers between substrates for GaN epitaxy by MOCVD. With the AlN buffer layer, a MOCVD GaN epitaxy layer with high crystallinity and (002) c-axis preferred orientation was achieved. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18001 |
Fulltext Rights: | 未授權 |
Appears in Collections: | 材料科學與工程學系 |
Files in This Item:
File | Size | Format | |
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ntu-104-1.pdf Restricted Access | 5.5 MB | Adobe PDF |
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