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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 薛文証 | |
dc.contributor.author | Yi-Cheng Lin | en |
dc.contributor.author | 林奕呈 | zh_TW |
dc.date.accessioned | 2021-06-08T00:25:25Z | - |
dc.date.copyright | 2013-07-25 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-07-15 | |
dc.identifier.citation | [1] S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak and A. K. Geim, “Giant intrinsic carrier mobilities in graphene and its bilayer,” Phys. Rev. Lett. 100, 016602 (2008).
[2] G. C. Liang and D. E. Nikonov, “Performance projections for ballistic graphene nanoribbon field-effect transistors,” IEEE Trans. Electr. Dev. 54, 677–682 (2007). [3] G. Fiori and G. Iannaccone, “Simulation of graphene nanoribbon field-effect transistors,” IEEE Electron Dev. Lett. 28, 760–762 (2007). [4] Y. Ouyang, Y. Yoon and J. Guo, “Scaling behaviors of graphene nanoribbon FETs: a three-dimensional quantum simulation study,” IEEE Trans. Electr. Dev. 54, 2223–2231 (2007). [5] F. Schwierz, “Graphene transistors,” Nature Nanotechnol. 5, 487–496 (2010). [6] Y. W. Son, M. L. Cohen and S. G. Louie, “Half-metallic graphene nanoribbons,” Nature 444, 347–342 (2007). [7] N. Tombros, C. Jozsa, M. Popinciuc, H. T. Jonkman and B. J. van Wees, “Electronic spin transport and spin precession in single graphene layers at room temperature,” Nature 448, 571–574 (2007). [8] W. Y. Kim and K. S. Kim, “Prediction of very large values of magnetoresistance in a graphene nanoribbon device,” Nature Nanotechnol. 3, 408–412 (2008). [9] O. Yazyev, “Emergence of magnetism in graphene materials and nanostructures,” Rep. Prog. Phys. 73, 056501 (2010). [10] K. Nakada, M. Fujita, G. Dresselhaus and M. S. Dresselhaus, “Edge state in graphene ribbons: nanometer size effect and edge shape dependence,” Phys. Rev. B 54, 17954–17961 (1996). [11] Z. F. Wang, Q. Li, H. Zheng, H. Ren, H. Su, Q. W. Shi, J. Chen, “Tuning the electronic structure of graphene nanoribbons through chemical edge modification: A theoretical study,” Phys. Rev. B 75, 113406 (2007). [12] Y. W. Son, M. L. Cohen and S. G. Louie, “Energy gaps in graphene nanoribbons,” Phys. Rev. Lett. 97, 216803 (2006). [13] P. Wanger, C. P. Ewels, V. V. Ivanovskaya, P. R. Briddon, A. Pateau, B. Humbert, “Ripple edge engineering of graphene nanoribbons,” Phys. Rev. B 84, 134110 (2011). [14] R. Sako, H. Hosokawa, H. Tsuchiya, “Computational Study of Edge Configuration and Quantum Confinement Effects on Graphene Nanoribbon Transport,” IEEE Electron Dev. Lett. 32, 6–8 (2011). [15] H. Zheng, Z. F. Wang, T. Luo, Q. W. Shi, J. Chen, “Analytical study of electronic structure in armchair graphene nanoribbons,” Phys. Rev. B 75, 165414 (2007). [16] B. J. van Wees, H. van houten, C. W. J. Beenakker, J. G. Williamson, L. P. Kouwenhoven, D. van der Marel, C. T. Foxon, “Quantized Conductance of Point Contacts in a Two-Dimensional Electron Gas,” Phys. Rev. Lett. 60, 848–850 (1988). [17] D. A. Wharam, T. J. Thornton, R. Newbury, M. Pepper, H. Ahmed, J. E. F. Frost, D. G. Hasko, D. C. Peacock, D. A. Ritchie, G. A. C. Jones, “One-dimensional transport and the quantisation of the ballistic resistance,” J. Phys. C 21, L209–L214 (1988). [18] J. I. Pascual, J. Mendez, J. Gomez-Herrero, A. M. Baro, N. Garcia, U. Landman, W. D. Luedtke, E. N. Bogachek, H.-P. Cheng, “Properties of Metallic Nanowires: From Conductance Quantization to Localization,” Science 267, 1793–1795 (1995). [19] J. I. Pascual, J. Mendez, J. Gomez-Herrero, A. M. Baro, N. Garcia, “Quantum Contact in Gold Nanostructures by Scanning Tunneling Microscopy,” Phys. Rev. Lett. 71, 1852–1855 (1993). [20] S. Frank, P. Poncharal, Z. L. Wang, W. A. de Heer, “Carbon Nanotube Quantum Resistors,” Science 280, 1744–1746 (1998). [21] Y. M. Lin, V. Perebeinos, Z. Chen, P. Avouris, “Electrical observation of subband formation in graphene nanoribbons,” Phys. Rev. B 78, 161409 (2008). [22] S. Ihnatsenka, I. V. Zozoulenko, G. Kirczenow, “Band-gap engineering and ballistic transport in edge-corrugated graphene nanoribbons,” Phys. Rev. B 80, 155415 (2009). [23] H. W. Kroto, J. R. Heath, S. C. O’Brien, R. F. Curl, R. E. Smalley, “C60: Buckminsterfullerene,” Nature 318, 162–163 (1985). [24] S. Iijima, “Helical microtubles of graphitic carbon,” Nature 354, 56–58 (1991). [25] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, “Electric Field Effect in Atomically Thin Carbon Films,” Science 306, 666–669 (2004). [26] K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov and A. K. Geim, “Two- dimensional atomic crystals,” Proc. Natl. Acad. Science USA 102, 10451–10453 (2010). [27] P. R. Wallace, “The band theory of graphite,” Phys. Rev. 71, 622–634 (1947). [28] M. Fujita, K. Wakabayashi, K. Nakada and K. Kusakabe, “Peculiar localized state at zigzag graphite edge,” J. Phys. Soc. Jpn. 65, 1920–1923 (1996). [29] M. Fujita, M. Igami and K. Nakada, “Lattice distortion in nanographite ribbons,” J. Phys. Soc. Jpn. 66, 1864–1867 (1997). [30] S. M. M. Dubois, Z. Zanolli, X. Declerck and J.-C. Charlier, “Electronic properties and quantum transport in graphene-based nanostructures,” Eur. Phys. J. B 72, 1–24 (2009). [31] M. I. Katsnelson, K. S. Novoselov and A. K. Geim, “Chiral tunnelling and the Klein paradox in graphene,” Nature Phys. 2, 620–625 (2006). [32] M. I. Katsnelson, K.S. Novoselov, “Graphene: New bridge between condensed matter physics and quantum electrodynamics,” Solid State Commun. 143 , 3–13 (2007). [33] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005). [34] Y. Zhang, Y. W. Tan, H. L. Stormer, P. Kim, “Experimental observation of the quantum Hall effect and Berry’s phase in graphene,” Nature 438, 201–204 (2005). [35] K. S. Novoselov, Z. Jiang, Y. Zhang, S. V. Morozov, H. L. Stormer, U. Zeitler, J. C. Maan, G. S. Boebinger, P. Kim and A. K. Geim, “Room-temperature quantum Hall effect in graphene,” Science 315, 1379 (2007). [36] J. H. Chen, C. Jang, S. Xiao, M. Ishigami,M. S. Fuhrer, “Intrinsic and extrinsic performance limits of graphene devices on SiO2,” Nature 3, 206–209 (2008). [37] A. A. Balandin, S. Ghosh, W. Z. Bao, I. Calizo, D. Teweldebrhan, F. Miao and C. N. Lau, “Superior thermal conductivity of single-layer graphene,” Nano Lett. 5, 902–907 (2008). [38] R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres and A. K. Geim, “Fine structure constant defines visual transparency of graphene,” Science 320, 1308 (2008). [39] A. H. Castro Neto, F.Guinea, N. M. R. Peres, K. S. Novoselov and A. K. Geim, “The electronic properties of graphene,” Rev. Mod. Phys. 81, 109–162 (2009). [40] N. W. Ashcroft and N. D. Mermin, Solid State Physics, Saunders College, Philadelphia (1976). [41] R. Landauer, “Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction,” IBM J. Res. Dev. 1, 223 (1957). [42] N. M. R. Peres, A. H. C. Neto, F. Guinea, “Conductance quantization in mesoscopic graphene,” Phys. Rev. B 73, 195411 (2006). [43] S. Ihnatsenka, G. Kirczenow, “Dirac point resonances due to atoms and molecules adsorbed on graphene and transport gaps and conductance quantization in graphene nanoribbons with covalently bonded adsorbates,” Phys. Rev. B 83, 245442 (2011). [44] M. Evaldsson, I. V. Zozoulenko, “Edge-disorder-induced Anderson localization and conduction gap in graphene nanoribbons,” Phys. Rev. B 78, 161407 (2008). [45] E. R. Mucciolo, A. H. C. Neto, C. H. Lewenkopf, “Conductance quantization and transport gaps in disordered graphene nanoribbons,” Phys. Rev. B 79, 075407 (2009). [46] D. Gunlycke, D. A. Areshkin, C. T. White, “Semiconducting graphene nanostrips with edge disorder,” Appl. Phys. Lett. 90, 142104 (2007). [47] H. S. P. Wong and D. Akinwande, Carbon Nanotube and Graphene Device Physics, Cambridge University Press, Cambridge (2011). [48] R. Saito, G. Dresselhaus and M. S. Dresselhaus, Physical Properties of Carbon Nanotubes, Imperial College Press, London (1998). [49] X. J. Wu and X. C. Zeng, “Sawtooth-like graphene nanoribbon,” Nano Res. 1, 40–45 (2008). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17614 | - |
dc.description.abstract | 本論文的主要目的是在探討準一維無缺陷奈米石墨帶的電子狀態密度和電導。本論文之理論研究是運用緊束縛法來求得各種奈米石墨帶的能帶結構,進而得知該結構下是否具有半導體性質,例如所有的鋸齒狀奈米石墨帶皆是金屬性質,而手椅狀奈米石墨帶則只有在寬度Narm=3p+2為金屬性質,其餘寬度結構皆是具有能隙的半導體,且此能隙會隨著寬度的增加而呈現震盪性減少。此外,特別討論手椅狀奈米石墨帶邊緣鍵結氫及氫氧根之情況,發現邊緣原子的鍵結會使手椅狀奈米石墨帶之能帶結構改變,甚至會觀察到金屬性轉半導體性的現象。然而,為了進一步了解奈米石墨帶的電子特性,我們可運用所得到的能帶結構來求得各能量下的電子狀態密度及其電導。根據分析結果顯示,越平坦的能帶則會貢獻越大的電子狀態密度,而且在絕對零度下所求得的電導會具有量子化的現象,隨著溫度的增加會使量子化電導逐漸消失。然而,目前實驗上對於製造高對稱奈米石墨帶仍是粗糙,因此考慮到鋸齒狀及手椅狀混合的手性狀奈米石墨帶來貼近真實情況的奈米石墨帶。此外,我們特別考慮一大鋸齒狀奈米石墨帶的結構,在此結構下會具有更豐富的能隙結構,因而具有相對多樣的電子狀態密度及其電導特性。 | zh_TW |
dc.description.abstract | The main purpose of this thesis is to investigate density of states and conductance of quasi-one-dimensional graphene nanoribbon without defects. By using the tight-binding method, one can obtain the band structure of graphene nanoribbons to know whether it exhibits a semiconducting behavior. For instance, all of the zigzag graphene nanoribbons are metallic. In contrast, armchair graphene nanoribbons are metallic only for Narm=3p+2, and other case are semiconducting. With increasing the widths of semiconducting armchair graphene nanoribbons, the size of the band gaps decreases. Moreover, one considers the case of armchair graphene nanoribbons with –H and –OH terminations. It is finded that addends can change the band structure of armchair graphene nanoribbons and even result in observable metal-to-semiconductor transition. However, in order to understand more electronic properties of graphene nanoribbon, one can use the band structures to obtain density of states and conductance spectrum. The numerical analysis shows that the flat dispersion gives rise to a sharp peak in the density of states. In addition, the conductance spectra of graphene nanoribbons exhibit quantized phenomenon at zero temperature and the quantized conductance disappear gradually as temperature increases. However, it is immature for fabricating high-symmetry graphene nanoribbons to date. Therefore, we consider chiral graphene nanoribbons which can be represented as a mixture of zigzag and armchair sites. In addition, sawtooth-like graphene nanoribbons, which are consisted of a bent angle of 120 degrees between the two zigzag edge segments, provide rich band gap structure. Thus, it can exhibit prolific density of states and transport properties. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T00:25:25Z (GMT). No. of bitstreams: 1 ntu-102-R00525074-1.pdf: 3091664 bytes, checksum: 25d8c6f2c8686d6bea1e1a58e19d9383 (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 第一章 導論 1
1.1 背景與研究動機 1 1.2 文獻回顧 2 1.3 論文架構 3 第二章 石墨烯 4 2.1 石墨烯的基本特性 4 2.2 石墨烯的晶格結構 4 2.2.1 蜂巢狀晶格 4 2.2.2 晶格向量 5 2.2.3 倒晶格向量 5 2.3 石墨烯的能帶結構 6 2.3.1 布洛赫定理 6 2.3.2 緊束縛法 7 第三章 高對稱奈米石墨帶 15 3.1 高對稱奈米石墨帶的晶格結構 15 3.1.1 手椅狀奈米石墨帶的晶格結構 15 3.1.2 鋸齒狀奈米石墨帶的晶格結構 15 3.2 高對稱奈米石墨帶的能帶結構 16 3.2.1 手椅狀奈米石墨帶的能帶結構 16 3.2.2 鋸齒狀奈米石墨帶的能帶結構 18 3.3 高對稱奈米石墨帶的電子狀態密度 20 3.3.1 手椅狀奈米石墨帶的電子狀態密度 20 3.3.2 鋸齒狀奈米石墨帶的電子狀態密度 22 3.4 高對稱奈米石墨帶的電導 22 3.4.1 手椅狀奈米石墨帶的電導 22 3.4.2 鋸齒狀奈米石墨帶的電導 25 3.5 邊緣鍵結氫及氫氧根之手性狀奈米石墨帶 26 3.5.1 鍵結氫及氫氧根手性狀奈米石墨帶的晶格結構 26 3.5.2 鍵結氫及氫氧根手性狀奈米石墨帶的能帶結構 26 3.5.3 鍵結氫及氫氧根手性狀奈米石墨帶的電子狀態密度 28 3.5.4 鍵結氫及氫氧根手性狀奈米石墨帶的電導 28 第四章 低對稱奈米石墨帶 52 4.1 低對稱奈米石墨帶的晶格結構 52 4.1.1 手性狀奈米石墨帶的晶格結構 52 4.1.2 大鋸齒狀奈米石墨帶的晶格結構 54 4.2 低對稱奈米石墨帶的能帶結構 55 4.2.1 手性狀奈米石墨帶的能帶結構 55 4.2.2 大鋸齒狀奈米石墨帶的能帶結構 55 4.3 低對稱奈米石墨帶的電子狀態密度 56 4.3.1 手性狀奈米石墨帶的電子狀態密度 56 4.3.2 大鋸齒狀奈米石墨帶的電子狀態密度 56 4.4 低對稱奈米石墨帶的電導 57 4.4.1 手性狀奈米石墨帶的電導 57 4.4.2 大鋸齒狀奈米石墨帶的電導 57 第五章 結論與未來展望 78 5.1 結論 78 5.2 未來展望 80 參考文獻 81 | |
dc.language.iso | zh-TW | |
dc.title | 奈米石墨帶的電子狀態密度與電導 | zh_TW |
dc.title | Density of States and Conductances in Graphene Nanoribbons | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 溫新助,余宗興,洪姮娥,鄭勝文 | |
dc.subject.keyword | 石墨烯,奈米石墨帶,鋸齒狀,手椅狀,緊束縛法,手性狀,大鋸齒狀,能帶結構,電子狀態密度,電導, | zh_TW |
dc.subject.keyword | graphene,graphene nanoribbons,zigzag,armchair,tight-binding method,chiral,sawtooth-like,band structure,density of states,conductance, | en |
dc.relation.page | 85 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2013-07-15 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
顯示於系所單位: | 工程科學及海洋工程學系 |
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