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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳敏璋 | |
dc.contributor.author | Che-Wei Lin | en |
dc.contributor.author | 林哲維 | zh_TW |
dc.date.accessioned | 2021-06-08T00:24:23Z | - |
dc.date.copyright | 2013-07-25 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-07-16 | |
dc.identifier.citation | [1] 黃惠良, 曾百亨, 太陽電池:太陽能轉換成電能的最佳裝置 五南圖書, 八月2008.
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17599 | - |
dc.description.abstract | 本論文研究利用原子層沉積技術(Atomic Layer Deposition, ALD)提升矽晶太陽能電池的效率。在矽晶片表面製作奈米級粗紋化結構可以有效降低反射率,可以大幅提升太陽能電池的吸光量。由於ALD技術具有(1)精密的厚度控制,精密度可達一個原子層;(2)精準的材料成份控制;(3)大面積、大產量的生產能力;(4)優異的均勻度與表面覆蓋能力;(5)材料缺陷密度低、無孔洞結構;(6)較低的材料成長溫度等優點。為了降低矽晶片的表面缺陷,我們進一步利用ALD成長氧化鋁及二氧化鈦表面鈍化層,以提升矽晶片少數載子生命期並提高太陽能電池元件的效率。本論文利用原子層沉積技術提高具有矽奈米柱與氧化鋅奈米柱陣列之矽晶太陽能電池的發電效率,分別可達到18.74%與16.42%。 | zh_TW |
dc.description.abstract | In this thesis, we report significant enhancement in efficiency of nanotextured silicon solar cells by atomic layer deposition (ALD). Nanotextured structures based on silicon nanowire and ZnO nanorod arrays, respectively, were fabricated on the surface of silicon substrates to reduce the reflection and increase the light absorption of solar cells. ALD technique offers many advantages, including accurate thickness and composition control, excellent conformality, low defect density, high uniformity over a large area, good reproducibility, and low growth temperatures. Accordingly, surface passivation layers prepared by ALD were used to suppress the surface recombination of the nanotextured silicon solar cells. High Efficiencies up to 18.74% and 16.42% were realized in nanotextured silicon solar cells based on silicon nanowire and ZnO nanorod arrays, respectively, assisted by the ALD techniques. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T00:24:23Z (GMT). No. of bitstreams: 1 ntu-102-R00527060-1.pdf: 6452653 bytes, checksum: 3c215f9537b7c4097d103f4185ba2b2e (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 口試委員審定書 I
致謝.. III 摘要.. …V Abstract VII 目錄.. IX 圖目錄 XII 表目錄 XV 第一章 簡介…. 1 1.1 研究動機 1 1.2 原子層沉積技術 2 1.2.1 原子層沉積技術 2 1.2.2 遠程電漿輔助原子層沉積技術 5 1.3 參考文獻 7 第二章 利用原子層沉積技術成長氧化鋁作為表面鈍化層應用在黑晶片太陽能電池….. 11 2.1 簡介 11 2.2 黑晶片之製作過程與性質分析 12 2.2.1 黑晶片製程介紹 12 2.2.2 黑晶片性質分析 14 2.3 實驗結果與討論 17 2.3.1 利用原子層沉積技術成長氧化鋁薄膜 17 2.3.2 光激發螢光技術及量測系統 18 2.3.3 準穩態光導系統測量少數載子生命期 19 2.3.4 太陽能電池之外部量子效率 21 2.3.5 黑晶片太陽能電池元件製備與量測流程 21 2.4 結果與討論 24 2.4.1 氧化鋁成長在黑晶片之光學性質分析 24 2.4.2 氧化鋁成長在黑晶片上之少數載子生命期量測 26 2.4.3 氧化鋁成長在黑晶片太陽能電池之外部量子效率量測 29 2.4.4 含有氧化鋁鈍化層之黑晶片太陽能電池效率量測 31 2.5 結論 34 2.6 參考文獻 35 第三章 利用遠程電漿輔助原子層沉積技術成長二氧化鈦作為表面鈍化層應用在黑晶片太陽能電池 39 3.1 簡介 39 3.2 實驗 40 3.2.1 利用遠程電漿輔助原子層沉積技術成長二氧化鈦薄膜 40 3.2.2 黑晶片太陽能電池元件製備與量測流程 41 3.3 結果與討論 42 3.3.1 表面鈍化層材料選擇 42 3.3.2 二氧化鈦之RPALD製程窗口 44 3.3.3 二氧化鈦成長在黑晶片之光學性質分析 44 3.3.4 二氧化鈦成長在黑晶片上之少數載子生命期量測 46 3.3.5 二氧化鈦成長在黑晶片太陽能電池之外部量子效率量測 48 3.3.6 含有二氧化鈦鈍化層之黑晶片太陽能電池效率量測 49 3.3.7 含有複合薄膜表面鈍化層之黑晶片太陽能電池效率量測 51 3.4 結論 55 3.5 參考文獻 56 第四章 利用氧化鋅奈米柱陣列作為抗反射層應用在矽晶太陽能電池.................59 4.1 簡介 59 4.2 實驗 60 4.2.1 利用水熱法成長氧化鋅奈米柱陣列 60 4.2.2 氧化鋅奈米柱作為抗反射層之太陽能電池元件製作 61 4.3 結果與討論 62 4.3.1 氧化鋅奈米柱陣列性質分析 62 4.3.2 成長氧化鋅奈米柱陣列作為抗反射層之太陽能電池效率量測.... 66 4.3.3 低溫下成長氧化鋁薄膜在含有氧化鋅奈米柱陣列之矽晶太陽能電池.........................................................................................................69 4.4 結論 74 4.5 參考文獻 75 第五章 總結 79 | |
dc.language.iso | zh-TW | |
dc.title | 利用原子層沉積技術成長氧化鋁及二氧化鈦薄膜應用在高效率矽晶太陽能電池之研究 | zh_TW |
dc.title | Application of Aluminum Oxide and Titanium Oxide Thin Film Grown by Atomic Layer Deposition on High-Efficiency Silicon Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 徐文慶,楊明瑞,李敏鴻 | |
dc.subject.keyword | 原子層沉積技術,表面鈍化層,奈米級粗紋化結構,黑晶片太陽能電池,氧化鋅奈米柱陣列, | zh_TW |
dc.subject.keyword | atomic layer deposition (ALD),surface passivation layer,nanotextured structure,black silicon solar cells,ZnO(Zinc Oxide) nanorod arrays, | en |
dc.relation.page | 80 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2013-07-16 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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ntu-102-1.pdf 目前未授權公開取用 | 6.3 MB | Adobe PDF |
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