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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林新智 | |
| dc.contributor.author | Kai-Fu Chang | en |
| dc.contributor.author | 張凱富 | zh_TW |
| dc.date.accessioned | 2021-06-08T00:11:34Z | - |
| dc.date.copyright | 2013-08-14 | |
| dc.date.issued | 2013 | |
| dc.date.submitted | 2013-08-06 | |
| dc.identifier.citation | [1] CRC Handbook of Thermoelectrics, Edited by D.M. Rowe, CRT Press LLC, USA, 1955.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17413 | - |
| dc.description.abstract | Bi2Te3系列化合物為室溫下最佳的熱電性質之材料，依參雜不同的元素可分為P-type Bi0.5Sb1.5Te3 和N-type Bi2Te2.7Se0.3。本實驗利用射頻磁控濺鍍方式製備P-type Bi0.5Sb1.5Te3 和N-type Bi2Te2.7Se0.3熱電薄膜在PI基材上，並改變射頻功率、工作壓力、基材溫度為實驗參數，以得到最佳的熱電特性。並進行XRD、XPS、霍爾效應以及Seebeck效應的量測分析。
P-type Bi0.5Sb1.5Te3方面發現在室溫下，工作壓力為5 mTorr且射頻功率18 W得到之熱電薄膜並於270度下通電流退火5分鐘後可以得到最佳的熱電特性，其Seebeck係數為220.5 μV/K，電阻率則會大幅降低至5 mΩ•cm，熱電功率因子可達到9.59 μW/K2cm。 N-type Bi2Te2.7Se0.3方面發現在基材溫度250度下，工作壓力5 mTorr且射頻功率15W，得到之熱電薄膜並於270度下通電流退火5分鐘後可以得到最佳的熱電特性，其Seebeck係數為177.65 μV/K，電阻率則會大幅降低至3.264x10-2 Ω•cm，熱電功率因子可達到4.158 μW/K2cm。 | zh_TW |
| dc.description.abstract | Bismuth telluride-based compound is currently widely used in thermoelectric material due to its excellent thermoelectric performance around room temperature. By doping different elements, P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 can be made. The thermoelectric thin films of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 on polyimide substrates are prepared by radio-frequency (RF) magnetron sputtering. The Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 thin films are deposited with different substrate temperature, work pressure and RF power by radio-frequency (RF) magnetron sputtering. Finally, this research analyses the themoeleletric performance, crystal structure and composition by XRD, XPS, Hall effect and the Seebeck effect.
This research discovers that the P-type Bi0.5Sb1.5Te3 thermoelectric thin films show the best thermoelectric properties at room temperature with 18 Watts of RF working pressure under 5 mTorrs after electrical annealing treatment at 270 degrees Celsius for 5 minutes；The Seebeck coefficient is 220.5 μV/K, the lowest electrical resistivity is 5 mΩ∙cm, and the highest power factor is 9.59 μW/K2cm. N-type Bi2Te2.7Se0.3 thermoelectric thin films show the best thermoelectric properties at room temperature with 15 Watts of RF, working pressure under 5 mTorrs after electrical annealing treatment at 270 degrees Celsius for 5 minutes and the Seebeck coefficient is 177.65 μV/K,the lowest electrical resistivity is 3.264x10-2 Ω∙cm and the highest power factor is 4.158 μW/K2cm. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T00:11:34Z (GMT). No. of bitstreams: 1 ntu-102-R00527056-1.pdf: 11323273 bytes, checksum: e6016da0cf145fc9780cde13c3befcfe (MD5) Previous issue date: 2013 | en |
| dc.description.tableofcontents | 誌謝 I
摘要 II Abstract III 圖目錄 VI 表目錄 XI 第一章 緒論 1 1-1 前言 1 1-2 研究動機 2 第二章 理論與文獻回顧 4 2-1 濺鍍理論 4 2-1-1 濺鍍 4 2-1-2 電漿 7 2-1-3 薄膜沉積 8 2-1-4 薄膜微觀結構 11 2-2 熱電效應理論 13 2-2-1 熱電傳輸理論 21 2-3 碲化鉍(Bi2Te3)熱電材料 29 2-4 熱電材料製備方法 31 2-5熱退火處理 37 第三章 實驗步驟與方法 38 3-1實驗流程 38 3-2 試片清潔製備 39 3-2-1 基材選取 39 3-2-2 試片清潔 39 3-3 靶材選取 40 3-4 薄膜沉積 40 3-4-1 鍍膜設備 40 3-5 快速退火爐 45 3-6 分析儀器介紹 46 3-6-1 膜厚測試(α-step) 46 3-6-2 X-ray 繞射分析儀(X-ray diffraction XRD) 47 3-6-3 光電子化學分析儀(XPS) 49 3-6-4 發射掃描式電子顯微鏡(FE-SEM) 51 3-6-5 Seebeck係數量測 53 3-6-6 HALL量測: 55 3-6-7 均勻度測試 59 3-6-8 百格試驗 60 第四章 濺鍍製程參數對Bi0.5Sb1.5Te3熱電薄膜影響 63 4-1製程參數對熱電薄膜之電性分析 63 4-2製程參數對熱電薄膜之晶體結構分析 81 4-3製程參數對熱電薄膜之微觀結構分析 86 4-4製程參數對熱電薄膜之成份分析 95 4-5薄膜沉積速率之討論 103 4-6固定參數下熱電薄膜膜厚關係之綜合分析討論 109 第五章 濺鍍製程參數對Bi2Te2.7Se0.3熱電薄膜影響 110 5-1製程參數對熱電薄膜之電性分析 110 5-2製程參數對熱電薄膜之晶體結構分析 120 5-3製程參數對熱電薄膜之微觀結構分析 122 5-4製程參數對熱電薄膜之成份分析 126 5-5薄膜沉積速率之討論 134 5-6固定參數下熱電薄膜膜厚關係之綜合分析討論 138 第六章 結論 139 參考文獻 141 | |
| dc.language.iso | zh-TW | |
| dc.title | 利用射頻磁控濺鍍法製備P-type Bi0.5Sb1.5Te3 和N-type Bi2Te2.7Se0.3熱電薄膜於PI軟性基板之熱電性質研究 | zh_TW |
| dc.title | The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 101-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 林明志 | |
| dc.contributor.oralexamcommittee | 高振宏,林招松 | |
| dc.subject.keyword | 磁控濺鍍,熱電材料,電功率因子,Seebeck係數, | zh_TW |
| dc.subject.keyword | Thermoelectric materials,Thin film,Power factor,Seebeck, | en |
| dc.relation.page | 146 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2013-08-06 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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