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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan) | |
dc.contributor.author | Cheng-Wei Yen | en |
dc.contributor.author | 閻政瑋 | zh_TW |
dc.date.accessioned | 2021-06-08T00:10:08Z | - |
dc.date.copyright | 2020-08-07 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-08-06 | |
dc.identifier.citation | [1] A. V. Kildishev, A. Boltasseva, and V. M. Shalaev, 'Planar photonics with metasurfaces,' Science, vol. 339, no. 6125, p. 1232009, 2013. [2] M. Khorasaninejad, W. T. Chen, R. C. Devlin, J. Oh, A. Y. Zhu, and F. Capasso, 'Metalenses at visible wavelengths: Diffraction-limited focusing and subwavelength resolution imaging,' Science, vol. 352, no. 6290, pp. 1190-1194, 2016. [3] B. H. Chen et al., 'GaN metalens for pixel-level full-color routing at visible light,' Nano letters, vol. 17, no. 10, pp. 6345-6352, 2017. [4] M. Khorasaninejad et al., 'Polarization-insensitive metalenses at visible wavelengths,' Nano Letters, vol. 16, no. 11, pp. 7229-7234, 2016. [5] F. Aieta et al., 'Aberration-free ultrathin flat lenses and axicons at telecom wavelengths based on plasmonic metasurfaces,' Nano letters, vol. 12, no. 9, pp. 4932-4936, 2012. [6] A. Arbabi, Y. Horie, M. Bagheri, and A. Faraon, 'Dielectric metasurfaces for complete control of phase and polarization with subwavelength spatial resolution and high transmission,' Nature nanotechnology, vol. 10, no. 11, pp. 937-943, 2015. [7] J. D. Caldwell et al., 'Sub-diffractional volume-confined polaritons in the natural hyperbolic material hexagonal boron nitride,' Nature communications, vol. 5, no. 1, pp. 1-9, 2014. [8] X. Chen et al., 'Dual-polarity plasmonic metalens for visible light,' Nature communications, vol. 3, no. 1, pp. 1-6, 2012. [9] S. M. Kamali, A. Arbabi, E. Arbabi, Y. Horie, and A. Faraon, 'Decoupling optical function and geometrical form using conformal flexible dielectric metasurfaces,' Nature communications, vol. 7, no. 1, pp. 1-7, 2016. [10] X. Ni, S. Ishii, A. V. Kildishev, and V. M. Shalaev, 'Ultra-thin, planar, Babinet-inverted plasmonic metalenses,' Light: Science Applications, vol. 2, no. 4, pp. e72-e72, 2013. [11] S. Sun et al., 'High-efficiency broadband anomalous reflection by gradient meta-surfaces,' Nano letters, vol. 12, no. 12, pp. 6223-6229, 2012. [12] D. K. Gramotnev and S. I. Bozhevolnyi, 'Plasmonics beyond the diffraction limit,' Nature photonics, vol. 4, no. 2, pp. 83-91, 2010. [13] N. Yu and F. Capasso, 'Flat optics with designer metasurfaces,' Nature materials, vol. 13, no. 2, pp. 139-150, 2014. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17387 | - |
dc.description.abstract | 單頻超穎透鏡能針對特定波段,透過次波長結構對通過的光相位進行修正,將入射光聚焦,在利用物理繞射極限所推出的光強度半高寬値FWHM也比傳統的光學元件來得優秀。 本篇論文使用光學模擬軟體設計,選擇六角柱單元結構,並依照六角最密堆積模擬出完全對稱的單頻超穎透鏡,能應用在各種偏振態的入射光,依照此方式製作了針對405nm、450nm、532nm與633nm四種波段的超穎透鏡,其基本參數為直徑100μm、聚焦在150μm,NA値為0.3。在製程上選擇氮化鎵材料製作,完成樣品後,可在電子顯微鏡下觀察到直徑60nm、高850nm並垂直於基板的氮化鎵奈米天線。接著利用我們所架設的量測光路,觀測到其聚焦後的聚焦光點半高寬値非常接近理論繞射極限,在解析度方面,現今發表過的文章利用1951 USAF量測到的最小線寬値為2.19(μm),而製作出來的樣品在405nm與450nm波段量測到0.87(μm),在532nm與633nm等波段也量測到1.1(μm),在解析度上提升許多。在效率方面也將利用偏振片與二分之一波片來驗證對偏振角度不敏感的特性,與高效率表現。 | zh_TW |
dc.description.abstract | Single wavelength meta-lens are designed for specific spectrum. Using sub-wavelength structure to modulate phases of incident light. The FWHM depends on diffraction limit is close to theory. Better than traditional optical device. In this thesis, using optical simulation software. Choosing hexagonal unit cell arrange by hexagonal closest packed simulating a full symmetric meta-lens. It can be used in any polarization light. Using this method, four different meta-lens correspond to four different wavelengths(405nm,450nm,532nm and 633nm).Gallium nitride material is choosing to complete our meta-lenses. After sample processing it can be observed high aspect ratio Nano gallium nitride antennas which are vertical to sapphire substrate by Scanning Electron Microscope. The diameter and NA ratio of meta-lens is 100μm and 0.3.After testing these meta-lens samples in our light path. The intensity of FWHM on focal spot is close to theoretical diffraction limit. So far the smallest line width by 1951 USAF resolution chart in other paper works is 2.19(μm).Therefore our smallest line width in 405nm and 450nm is 0.87(μm),meanwhile 1.1(μm) in 532nm and 633nm,which leading other teams. Polarizer and half wave plate are used in efficiency measurement testing the polarization insensitive performance. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T00:10:08Z (GMT). No. of bitstreams: 1 U0001-0508202022364100.pdf: 4399929 bytes, checksum: 962eb9c58bd2ad074b130ab406a1a15c (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | 目錄 口試委員審定書 I 致謝 II 中文摘要 III Abstract IV 目錄 V 第一章 超穎透鏡的原理及發展 1 1-1 廣義司乃耳定理(Generlized Snell’s law) 1 1-2 繞射極限(Diffraction limit) 2 1-3 超穎表面對於光相位影響 4 1-4 超穎表面結合PB-Phase製作超穎透鏡 5 1-5 氮化鎵超穎透鏡 7 1-6 無偏振選擇超穎透鏡之實現 9 第二章 儀器介紹 11 2-1 電漿輔助化學氣相沉積(Plasma-Enhanced Chemical Vapor Deposition ,PEVCD) 11 2-2 旋轉塗佈機(Spin Coater) 12 2-3 電子束微影系統(E-Beam Lithography) 12 2-4 電子束蒸鍍(E-Gun Evaporation) 15 2-5 反應離子蝕刻(Reactive-Ion Etching) 16 2-6 感應式耦合電漿蝕刻(ICP-RIE) 17 2-7 掃描式電子顯微鏡(Scanning Electron Microscope) 18 第三章 元件設計 19 3-1 無偏振選擇單頻超穎透鏡 19 3-2 設計超穎透鏡參數 19 3-3 超穎透鏡的相位分佈 21 3-4 單元結構的CST模擬 22 3-5 CST模擬聚焦情況 23 第四章 製程步驟與樣品檢測 26 4-1 選用材料 26 4-2 清潔樣品 26 4-3 PECVD沉積二氧化矽薄膜 27 4-4 光阻塗佈 27 4-5 電子束微影製程 28 4-6 顯影製程 29 4-7 E-gun濺鍍鉻金屬薄膜層 29 4-8 Lift off製程 30 4-9 反應離子蝕刻二氧化矽 31 4-10 去除鉻金屬遮罩 31 4-11 ICP-RIE蝕刻氮化鎵 32 4-12 去除二氧化矽遮罩 33 第五章 量測與分析 34 5-1 量測儀器簡介 34 5-2 無偏振超穎透鏡樣品檢測 38 5-3 光路架構 41 5-4 量測方法與結果 42 5-5 結果比較 48 結論及未來展望 49 參考文獻 50 | |
dc.language.iso | zh-TW | |
dc.title | 可見光氮化鎵超穎透鏡應用於繞射極限成像 | zh_TW |
dc.title | GaN Metalenses for diffraction-limited imaging at visible wavelengths | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 蘇文生(Vin-Cent Su) | |
dc.contributor.oralexamcommittee | 蘇炎坤(Yan-Kuin Su),孫允武(Yuen-Wuu Suen),孫建文(Kien-Wen Sun) | |
dc.subject.keyword | 超穎透鏡,氮化鎵, | zh_TW |
dc.subject.keyword | GaN,Metalenses, | en |
dc.relation.page | 50 | |
dc.identifier.doi | 10.6342/NTU202002498 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2020-08-06 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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