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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 劉致為 | |
dc.contributor.author | Hung-Chang Sun | en |
dc.contributor.author | 孫宏彰 | zh_TW |
dc.date.accessioned | 2021-06-08T00:09:49Z | - |
dc.date.copyright | 2013-08-28 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-08-08 | |
dc.identifier.citation | Chapter 1: [1] H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sane, H. Iwata, S. Tsuda, and S. Nakano, “High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics,” IEDM Tech. Dig., pp. 563-566, 1991. [2] C.-S. Lin, Y.-C. Chen, T.-C. Chang, F.-Y. Jian, W.-C. Hsu, Y.-J. Kuo, C.-H. Dai, T.-C. Chen, W.-H. Lo, T.-Y. Hsieh, and J.-M. Shih, “NBTI Degradation in LTPS TFTs Under Mechanical Tensile Strain,” IEEE Electron Device Lett., vol. 32, no. 7, pp. 907-909, 2011. [3] A. Mimura, N. Konishi, K. Ono, J.-I. Ohwada, Y. Hosokawa, Y. A. Ono, T. Suzuki, K. Miyata and H. Kawakami, “High performance low-temperature poly-Si n-channel TFTs for LCD,” IEEE Trans. Electron Devices, vol. 36, no. 2, pp. 351-359, 1989. [4] S. Uchikoga, “Low-Temperature Polycrystalline Silicon Thin-Film Transistor Technologies for System-on-Glass Displays,” MRS Bulletin, pp. 881-556, Nov. 2002. [5] C.-H. Ho, G. Panagopoulos and K. Roy, “A Self-Consistent Electrothermal Model for Analyzing NBTI Effect in p-Type Poly-Si Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 60, no. 1, pp. 288-294, 2013. [6] C. Schlunder, R.-P. Vollertsen, W. Gustin and H. Reisinger, “A reliable and accurate approach to assess NBTI behavior of state-of-the-art pMOSFETs with fast-WLR,” in 37th European Solid State Device Research Conference, pp. 131-134, 2007. [7] A. Shah, J. Meier, A. Buechel, U. Kroll, J. Steinhauser, F. Meillaud, H. Schade, D. Domine, “Towards very low-cost mass production of thin-film silicon photovoltaic (PV) solar modules on glass,” Thin Solid Films, vol. 502, pp. 292-299, 2006. [8] K. Yamamoto, A. Nakajima, M. Yoshimi, T. Sawada, S. Fukuda, T. Suezaki, M. Ichikawa, Y. Koi, M. Goto, T. Meguro, T. Matsuda, M. Kondo, T. Sasaki, Y. Tawada, “A high efficiency thin film silicon solar cell and module,” Solar Energy, vol. 77, pp. 939-949, 2004. [9] M. Gostein and L. Dunn, “Light soaking effects on photovoltaic modules: Overview and literature review,” in 37th IEEE Photovoltaic Specialists Conference (PVSC), pp. 003126-003131, 2011. [10] S. Tyagi, “Moore's Law: A CMOS Scaling Perspective,” in 14th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), pp.10-15, 2007. Chapter 2: [1] C.-F. Huang, C.-Y. Peng, Y.-J. Yang, H.-C. Sun, H.-C. Chang, P.-S. Kuo, H.-L. Chang, C.-Z. Liu, and C. W. Liu, “Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors,” IEEE Electron Device Lett., vol. 29, no. 12, pp. 1332-1335, 2008 [2] G. Chen, M. F. Li, C. H. Ang, J. Z. Zheng, and D. L. Kwong, “Dynamic NBTI of p-MOS Transistors and Its Impact on MOSFET Scaling,” IEEE Electron Device Lett., vol. 23, no. 12, pp. 734-736, 2002. [3] D. K. Schroder and J. A. Babcock, “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing,” J. Appl. Phys., vol. 94, no. 1, pp. 1-18, 2003. [4] C.-F. Huang, H.-C. Sun, Y.-J. Yang, C.-Y. Peng, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Dynamic bias instability on p-channel polycrystalline silicon thin-film transistors induced by impact ionization,” IEEE Elec. Dev. Lett., vol. 30, no. 4, pp. 368-370, 2009. [5] J. C. Liao, Y. K. Fang, C. H. Kao, and C. Y. Cheng, “Dynamic Negative Bias Temperature Instability (NBTI) of Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors,” IEEE Electron Device Lett., vol. 29, no. 5, pp. 477-479, 2008. [6] R. Choi, D. Heh, C. Y. Kang, C. Young, G. Bersuker and B. H. Lee, “Comparison of novel BTI measurements for high-k dielectric MOSFETs,” in 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), pp. 1117-1118, 2006. [7] S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saha and M. A. Alam, “On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole trapping controversy?” in 45th International Reliability Physics Symposium, pp. 1-9, 2007. [8] M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, N. Revil, “On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET’s ,” IEDM Tech. Dig., pp. 109-112, 2004. [9] V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix and E. Vincent, “A thorough investigation of MOSFETs NBTI degradation,” Microelectronics Reliability, vol. 45, no. 1, pp.83-98, 2005. [10] V. Maheta, C. Olsen, K. Ahmed and S. Mahapatra, “The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly technique,” IEEE Trans. Electron Devices, vol. 55, no. 7, pp.1630-1638, 2008. [11] S. Tsujikawa, T. Mine, K. Watanabe, Y. Shimamoto, R. Tsuchiya, K. Ohnishi, T. Onai, J. Yugami and S. Kimura, “Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics,” in Proceedings of 41st International Reliability Physics Symposium, pp.183-188, 2003. [12] H. Reisinger, O. Blank, W. Heinrigs, A. Muhlhoff, W. Gustin and C. Schlunder, “Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT-measurements,” in Proceedings of 44th International Reliability Physics Symposium, pp.448-453, 2006. [13] S. Rangan, N. Mielke and E. C. C. Yeh, “Universal recovery behavior of negative bias temperature instability,” IEDM Tech. Dig., pp.14.3.1-14.3.4, 2003. [14] K. O. Jeppson and C. M. Svensson, “Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices,” J. Appl. Phys., vol. 48, no. 5, pp. 2004-2014, 1977. [15] S. Mahapatra, N. Goel, S. Desai, S. Gupta, B. Jose, S. Mukhopadhyay, K. Joshi, A. Jain, A. E. Islam and M. A. Alam, “A Comparative Study of Different Physics-Based NBTI Models,” IEEE Trans. on Electron Devices, vol. 30, no. 3, pp. 901-916, 2013. [16] J. H. Stathis and S. Zafar, “The negative bias temperature instability in MOS devices: A review,” Microelectronics Reliability, vol. 46, pp. 270-286, 2003. [17] D. K. Schroder, “Negative bias temperature instability: What do we understand?” Microelectronics Reliability, vol. 47, pp. 841-852, 2007. [18] M. A. Alam, “Negative Bias Temperature Instability Basics/Modeling,” tutorial program, in Proceedings of International Reliability Physics Symposium (IRPS), 2005. [19] J. B. Yang, T. P. Chen, S. S. Tan and L. Chan, “A Simple Negative Bias Temperature Instability Characterization Methodology to Minimize the Immediate Recovery Effect during Measurement,” Jpn. J. Appl. Phys., vol. 45, pp. 6137-6140, 2006. [20] S. Takagi, A. Toriumi, M. Iwase and H. Tango, “On the Universality of Inversion Layer Mobility in Si MOSFET's: Part 11-Effects of Surface Orientation,” IEEE Trans. on Electron Devices, vol. 41, no. 12, pp. 2363-2368, 1994. [21] E. N. Kumar, V. D. Maheta, S. Purawat, A. E. Islam, C. Olsen, K. Ahmed, M. A. Alam and S. Mahapatra, “Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique,” IEDM Tech. Dig., pp. 809-812, 2007. [22] Z. Ji, J. F. Zhang, M. H. Chang, B. Kaczer, and G. Groeseneken, “An Analysis of the NBTI-Induced Threshold Voltage Shift Evaluated by Different Techniques,” IEEE Trans. on Electron Devices, vol. 56, no. 5, pp. 1086-1093, 2007. Chapter 3: [1] M. A. Green, “Crystalline and thin-film silicon solar cells: state of the art and future potential,” Solar Energy, vol. 74, pp. 181-192, 2003. [2] S. Hegedus, “Thin Film Solar Modules: The Low Cost, High Throughput and Versatile Alternative to Si Wafers,” Prog. Photovolt: Res. Appl., vol. 14, pp. 393-411, 2006. [3] A. V. Shah, H. Schade, M. Vanecek, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz and J. Bailat, “Thin-film Silicon Solar Cell Technology,” Prog. Photovolt: Res. Appl., pp. 113-142, 2004. [4] K. L. Chopra, P. D. Paulson and V. Dutta, “Thin-Film Solar Cells: An Overview,” Prog. Photovolt: Res. Appl., vol. 12, pp. 69-92, 2004. [5] J. CARABE and J.J. GANDIA, “Thin-film-silicon solar cells,” Opto-Electron. Rev., vol. 12, no. 1, pp. 1-6, 2004. [6] B. Parida, S. Iniyan, R. Goic, “A review of solar photovoltaic technologies,” Renewable and Sustainable Energy Reviews, vol. 15, pp. 1625-1636, 2011. [7] D. H. Rose, F. S. Hasoon, R. G. Dhere, D. S. Albin, R. M. Ribelin, X. S. Li, Y. Mahathongdy, T. A. Gessert and P. Sheldon, “Fabrication Procedures and Process Sensitivities for CdS/CdTe Solar Cells,” Prog. Photovolt: Res. Appl., vol. 7, pp. 331-340, 1999. [8] Y. Hishikawa, N. Nakamura, S. Tsuda, S. Nakano, Y. Kishi and Y. Kuwano, “Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films,” Jpn. J. Appl. Phys., vol. 30, pp. 1008-1014, 1991. [9] M. I. Kabir, Z. Ibarahim, M. Alghoul, K. Sopian, MD. R. Karim and N. Amin, “Bandgap Optimization of Absorber Layers in Amorphous Silicon Single and Multijunction Junction Solar Cells,” Chalcogenide Letters, vol. 9, pp. 51-59, 2012. [10] A. Kumbhar, S. B. Patil, S. Kumar, R. Lal and R. O. Dusane, “Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene,” Thin Solid Films, vol. 395, pp. 244-248, 2001. [11] G. Lucovsky, b, G. N. Parsons, C. Wang, B. N. Davidson, D. V. Tsu, “Low-temperature deposition of hydrogenated amorphous silicon (a-Si:H): Control of polyhydride incorporation and its effects on thin film properties,” Solar Cells, vol. 27, pp. 121-136, 1989. [12] J. Meier, U. Kroll, E. Vallat-Sauvain, J. Spitznagel, U. Graf and A. Shah, “Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique,” Solar Energy, vol. 77, pp. 983–993, 2004. [13] D. L. Staebler and C. R. Wronski, “Reversible conductivity changes in discharge‐produced amorphous Si,” Appl. Phys. Lett., vol. 31, pp. 292–294, 1977. [14] M. Stutzmann, W. B. Jackson, and C. C. Tsai, “Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study,” Phys. Rev. B, vol. 32, pp. 23-47, 1985. [15] D. L. Staebler, R. S. Crandall, and R. Williams, “Stability of n‐i‐p amorphous silicon solar cells,” Appl. Phys. Lett., vol. 39, pp. 733-735, 1981. [16] H. Dersch, J. Stuke, and J. Beichler, “Light‐induced dangling bonds in hydrogenated amorphous silicon,” Appl. Phys. Lett., vol. 38, pp. 456-458, 1981. [17] B. Yan, G. Yue, J. Yang, A. Banerjee and S. Guha, “Hydrogenated Microcrystalline Silicon Single-Junction and Multi-Junction Solar Cells,” Mat. Res. Soc. Symp. Proc., vol. 762, pp. A4.1.1-A4.1.12, 2003. [18] D. E. Carlson and K. Rajan, “The reversal of light-induced degradation in amorphous silicon solar cells by an electric field,” Appl. Phys. Lett., vol. 70, pp. 2168-2170, 1997. [19] D. E. Carlson and K. Rajan, “Evidence for proton motion in the recovery of light-induced degradation in amorphous silicon solar cells,” J. Appl. Phys., vol. 83, pp. 1726-1729, 1998. [20] M. Despeisse, G. Bugnon, A. Feltrin, M. Stueckelberger, P. Cuony, F. Meillaud, A. Billet, and C. Ballif, “Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate,” Appl. Phys. Lett., vol. 96, pp. 073507-1-073507-3, 2010. [21] X. Deng, X. Liao, S. Han, H. Povolny, P. Agarwal, “Amorphous silicon and silicon germanium materials for high-efficiency triple-junction solar cells,” Solar Energy Materials & Solar Cells, vol. 62, pp. 89-95, 2000. [22] J. H. Stathis and S. Zafar, “The negative bias temperature instability in MOS devices: A review,” Microelectronics Reliability, vol. 46, pp. 270-286, 2006. Chapter 4: [1] J. Meier, S. Dubail, R. Fluckiger, D. Fischer, H. Keppner and A. Shah, “Intrinsic microcrystalline silicon (mc-Si:H)- a promising new thin film solar cell material,” in Proceedings of the 1st World Conference on Photovoltaic Energy Conversion (WCPEC’01), pp. 409-412, 1994. [2] B. Yan, G. Yue, Jessica M. Owens, J. Yang and S. Guha, “Light-induced metastability in hydrogenated nanocrystalline silicon solar cells,” Appl. Phys. Lett., vol. 85, pp. 1925-1927, 2004. [3] H. Keppner, J. Meier, P. Torres, D. Fischer and A. Shah, “Microcrystalline silicon and micromorph tandem solar cells,” Appl. Phys. A, vol. 69, pp. 169-177, 1999. [4] D. L. Staebler and C. R. Wronski, “High-Efficiency μc-Si Solar Cells Made by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition,” Prog. Photovolt: Res. Appl., vol. 14, pp. 305-311, 2006. [5] D. L. Staebler and C. R. Wronski, “Reversible conductivity changes in discharge‐produced amorphous Si,” Appl. Phys. Lett., vol. 31, pp. 292–294, 1977. [6] M. Stutzmann, W. B. Jackson, and C. C. Tsai, “Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study,” Phys. Rev. B, vol. 32, pp. 23-47, 1985. [7] C. F. O. Graeff, R. Buhleier, and M. Stutzmann, “Light‐induced annealing of metastable defects in hydrogenated amorphous silicon,” Appl. Phys. Lett., vol. 62, pp. 3001-3003, 1993. [8] D. L. Staebler, R. S. Crandall, and R. Williams, “Stability of n‐i‐p amorphous silicon solar cells,” Appl. Phys. Lett., vol. 39, pp. 733-735, 1981. [9] H. Dersch, J. Stuke, and J. Beichler, “Light‐induced dangling bonds in hydrogenated amorphous silicon,” Appl. Phys. Lett., vol. 38, pp. 456-458, 1981. [10] D. E. Carlson and K. Rajan, “The reversal of light-induced degradation in amorphous silicon solar cells by an electric field,” Appl. Phys. Lett., vol. 70, pp. 2168-2170, 1997. [11] D. E. Carlson and K. Rajan, “Evidence for proton motion in the recovery of light-induced degradation in amorphous silicon solar cells,” J. Appl. Phys., vol. 83, pp. 1726-1729, 1998. [12] B. Yan, G. Yue, J. M. Owens, J. Yang and S. Guha, “Light-induced metastability in hydrogenated nanocrystalline silicon solar cells,” Appl. Phys. Lett., vol. 85, pp. 1925-1927, 2004. [13] S. Olibet, E. Vallat-Sauvain and C. Ballif, “Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds,” Phys. Rev. B, vol. 76, pp. 035326-1- 035326-14, 2007. [14] E. A. Schiff, “Mobility-lifetime estimates in amorphous hydrogenated silicon (a-Si:H),” Philosophical Magazine Letters, vol. 55, no. 2, pp. 87-92, 1987. [15] J. Müller, B. Rech, J. Springer, and M. Vanecek, “TCO and light trapping in silicon thin film solar cells,” Solar Energy, vol. 77, pp. 917-930, 2004. [16] F. A. Rubinelli, R. L. Stolk, A. Sturiale, J. K. Rath and R. E. I. Schropp, “Sensitivity of the dark spectral response of thin film silicon based tandem solar cells on the defective regions in the intrinsic layers,” Journal of Non-Crystalline Solids, vol. 352, pp. 1876-1879, 2006. [17] J. Löffler, A. Gordijn, R. L. Stolk, H. Li, J. K. Rath and R. E. I. Schropp, “Amorphous and ‘micromorph’ silicon tandem cells with high open-circuit voltage,” Solar Energy Materials & Solar Cells, vol. 87, pp. 251-259, 2005. [18] A. Sturiale, H. T. Li, J. K. Rath, R. E. I. Schropp, and F. A. Rubinelli, “Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations,” J. Appl. Phys., vol. 106, pp. 014502-1-014502-10, 2009. [19] A. Banerjee, J. Yang, T. Glatfelter, K. Hoffman and S. Guha, “Experimental study of p layers in ‘‘tunnel’’ junctions for high efficiency amorphous silicon alloy multijunction solar cells and modules,” Appl. Phys. Lett., vol. 64, pp. 1517-1519, 1994. [20] H.-C. Sun, W.-D. Chen, T. H. Cheng, Y.-J. Yang, C. W. Liu and H.-T. Shih, “Recovery of light induced degradation of micromorph solar cells by reverse bias,” in 218th Meeting of Electrochemical Society, vol. 33, pp. 57-63, 2010. [21] A. Shah, J. Meier, L. Feitknecht, E. Vallat-Sauvain and J. Bailat, “Micromorph (microcrystalline/amorphous silicon) tandem solar cells: status report and future perspectives,” in Proceedings of the 17th EC Photovoltaic Solar Energy Conference, vol. 3, pp. 2823-2829, 2001. Chapter 5: [1] J. I. Pankove and D. E. Carlson, “Electrical and Optical Properties of Hydrogenated Amorphous Silicon,” Ann. Rev. Mater. Sci., vol. 10, pp. 43-63, 1980. [2] K. W. Jansen, S. B. Kadam, and J. F. Groelinger, “The Advantages of Amorphous Silicon Photovoltaic Modules in Grid-Tied Systems,” in IEEE 4th World Conference on Photovoltaic Energy Conversion, vol. 2, pp. 2363-2366, May. 2006. [3] A. Virtuani, D. Pavanello and G. Friesen, “Overview of Temperature Coefficients of Different Thin Film Photovoltaic Technologies,” in 25th European Photovoltaic Solar Energy Conference and Exhibition, pp. 4248 - 4252, 2010. [4] S. Shaari, K. Sopian, N. Amin and M. N. Kassim, “The Temperature Dependence Coefficients of Amorphous Silicon and Crystalline Photovoltaic Modules Using Malaysian Field Test Investigation,” American Journal of Applied Sciences, vol. 6, pp. 586-593, 2009. [5] S. Krauter and A. Preiss, “Performance Comparison of a-Si, μa-Si and c-Si as a Function of Air Mass and Turbidity,” in 25th European Photovoltaic Solar Energy Conference and Exhibition, pp. 3141-3144, 2010. [6] R. Santbergen, R.J.C. van Zolingen, “The absorption factor of crystalline silicon PV cells: A numerical and experimental study,” Solar Energy Materials & Solar Cells, vol. 92, pp. 432-444, 2008. [7] S. Krauter, A. Preiss, “Performance Comparison of a-Si, μA-Si and c-Si as a Function of Air Mass and Turbidity,” 5th World Conference on Photovoltaic Energy Conversion, pp. 3141-3144, 2010. [8] N. H. Reich, W. G. J. H. M. V. Sark, E. A. Alsema, S. Y. Kan, S. Silvester, A. S. H. Van der Heide, R. W. Lof, R. E. I. Schropp, “Weak light performance and spectral response of different solar cell types,” in Proceedings of 20th European photovoltaic solar energy conference, pp. 2120-2123, 2005. [9] B. H. Hassanzadeh, A.C. de Keizer, N. H. Reich, W. G. J. H. M. van Sark, “The Effect of a Varying Solar Spectrum on The Energy Performance of Solar Cells,” in 22nd European Photovoltaic Solar Energy Conference, pp. 2652-2658, 2007. [10] K. Sukulal and K. N. Bhat, “Role of lifetime and energy-bandgap narrowing in diffused-junction silicon solar cells,” in IEE Proceedings J. Optoelectronics, vol. 134, pp. 249-258, 1987. [11] Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica, vol. 34, pp. 149-154, 1967. [12] P. R. i Cabarrocas, A. F. i Morral and Y. Poissant, “Growth and optoelectronic properties of polymorphous silicon thin films,” Thin Solid Films, vol. 403-404, pp. 39-46, 2002. [13] S. Tchakarov, P. Roca i Cabarrocas, U. Dutta, P. Chatterjee, and B. Equer, “Experimental study and modeling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon,” J. Appl. Phys., vol. 94, no. 11, pp. 7317-7327, 2003. [14] P. St’ahel, S. Hamma, P. Sládek, P. R. i Cabarrocas, “Metastability studies in silicon thin films: from short range ordered to medium and long range ordered materials,” Journal of Non-Crystalline Solids, vol. 227-230, pp. 276-280, 1998. [15] B. M. Monroy, A. Remolina, M. F. García-Sánchez, A. Ponce, M. Picquart, and G. Santana, “Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD,” Journal of Nanomaterials, vol. 2011, no. 39, pp. 190632-190640, 2011. [16] K. H. Kim, E. V. Johnson, A. Abramov and P. R. i Cabarrocas, “Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells,” EPJ Photovoltaics, vol. 3, pp. 30301, 2012. [17] K. Emery, J. Burdick, Y. Caiyem, D. Dunlavy, H. Field, B. Kroposki, T. Moriarty, L. Ottoson, S. Rummel, T. Strand, and M. W. Wanlass, “Temperature dependence of photovoltaic cells, modules and systems,” in 25th IEEE Photovoltaic Specialists Conference (PVSC), pp. 1275-1278, May. 1996. Chapter 6: [1] S.-Y. Kim, Y. M. Kim, K.-H. Baek, B.-K. Choi, K.-R. Han, K.-H. Park and J.-H. Lee, “Temperature Dependence of Substrate and Drain–Currents in Bulk FinFETs,” IEEE Trans. Electron Devices, vol. 54, no. 5, pp.1259-1264, 2007. [2] M. Shrivastava, M. Agrawal, S. Mahajan, H. Gossner, T. Schulz, D. K. Sharma and V. R. Rao, “Physical Insight Toward Heat Transport and an Improved Electrothermal Modeling Framework for FinFET Architectures,” IEEE Trans. Electron Devices, vol. 59, no. 5, pp.1353-1363, 2012. [3] Y.-K. Choi, D. Ha, E. Snow, J. Bokor and T.-J. King, “Reliability study of CMOS FinFETs,” IEDM Tech. Dig., pp. 7.6.1 -7.6.4, 2003. [4] E. Pop and K. E. Goodson, “Thermal Phenomena in Nanoscale Transistors,” J. Electron. Packag., vol. 128. pp. 102-108, 2006. [5] G. Wachutka, “An Extended Thermodynamic Model for the Simultaneous Simulation of the Thermal and Electrical Behaviour of Semiconductor Devices,” in Proceedings of the 6th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VI), pp. 409–414, 1989. [6] H. B. Callen, Thermodynamics and an Introduction to Thermostatistics, New York: John Wiley & Sons, 2nd ed., 1985. [7] S. C. Choo, “Theory of a Forward-Biased Diffused-Junction P-L-N Rectifier—Part I: Exact Numerical Solutions,” IEEE Transactions on Electron Devices, vol. ED-19, no. 8, pp. 954–966, 1972. [8] N. H. Fletcher, “The High Current Limit for Semiconductor Junction Devices,” in Proceedings of the IRE, vol. 45, no. 6, pp. 862–872, 1957. [9] T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. Mclntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson and M. Bohr, “A 90nm High Volume Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors,” IEDM Tech. Dig., pp. 978-980, 2003. [10] Y.Q. Wu, R.S. Wang, T. Shen, J.J. Gu and P. D. Ye, “First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching,” IEDM Tech. Dig., pp. 13.4.1-13.4.4, 2009. [11] K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C.-H. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks , R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad#, L. Pipes, M. Prince, P. Ranade, T. Reynolds, J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, K. Zawadzki, “A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging,” IEDM Tech. Dig., pp. 247-250, 2007. [12] X. Huang, W.-C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi, K. Asano, V. Subramanian, T.-J. King, J. Bokor and C. Hu, “Sub 50-nm FinFET: PMOS,” IEDM Tech. Dig., pp. 67-70, 1999. [13] C.-H. Jan, U. Bhattacharya, R. Brain, S .- J. Choi, G. Curello, G. Gupta, W. Hafez, M. Jang, M. Kang, K. Komeyli, T. Leo, N. Nidhi, L. Pan, J. Park, K. Phoa, A. Rahman, C. Staus, H. Tashiro, C. Tsai, P. Vandervoorn, L. Yang, J.-Y. Yeh, P. Bai, “A 22nm SoC Platform Technology Featuring 3-D Tri-Gate and High-k/Metal Gate, Optimized for Ultra Low Power, High Performance and High Density SoC Applications,” IEDM Tech. Dig., pp. 3.1.1-3.1.4, 2012. [14] C. Auth, C. Allen, A. Blattner, D. Bergstrom, M. Brazier, M. Bost, M. Buehler, V. Chikarmane, T. Ghani, T. Glassman, R. Grover, W. Han, D. Hanken, M. Hattendorf, P. Hentges, R. Heussner, J. Hicks, D. Ingerly, P. Jain, S. Jaloviar, R. James, D. Jones, J. Jopling, S. Joshi, C. Kenyon, H. Liu, R. McFadden, B. McIntyre, J. Neirynck, C. Parker, L. Pipes, I. Post, S. Pradhan, M. Prince, S. Ramey, T. Reynolds, J. Roesler, J. Sandford, J. Seiple, P. Smith, C. Thomas, D. Towner, T. Troeger, C. Weber, P. Yashar, K. Zawadzki, K. Mistry, “A 22nm High Performance and Low-Power CMOS Technology Featuring Fully-Depleted Tri-Gate Transistors, Self-Aligned Contacts and High Density MIM Capacitors,” VLSI Symp. Tech., pp. 131-132, 2012. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17381 | - |
dc.description.abstract | 本文主要係進行複晶矽薄膜電晶體、非晶矽太陽能電池及矽鰭式場效電晶體之可靠度研究與分析。對於金屬氧化物半導體場效電晶體及薄膜電晶體來說,為了確保元件的穩定性及確定其生命週期,直流偏壓溫度不穩定性的分析已成為一個重要的可靠度研究。當施加負偏壓於P型薄膜電晶體時,因表面的施體缺陷造成臨界電壓往負偏壓方向移動。若在進行負偏壓溫度不穩定性的量測時有存在著延遲時間的影響,則會低估或是高估實際臨界電壓的移動量。在本文中將研究複晶矽薄膜電晶體的不同直流偏壓溫度不穩定性量測方式。並提出一改良後的量測方式以同時萃取出臨界電壓移動量及載子移動率的減少量。
本文的第二部份將探討非晶矽太陽能電池的可靠度。近年光伏產業積極發展薄膜太陽能電池以期降低生產成本。在眾多薄膜太陽能技術中,以非晶矽太陽能電池發展最成熟。但非晶矽太陽能電池在光照後會因更多斷鍵的產生而劣化。而此光致劣化可以經由在特定溫度下施加負偏壓來回復其部份效率。本文的第三章及第四章主要係研究光致劣化後的非晶矽基太陽能電池於施加負偏壓後的效率回復。實驗結果顯示效率回復比例與施加偏壓的電場大小呈正相關,並發現在非晶矽/微晶矽疊層電晶體上僅需要較小的負偏壓就可以回復其光致劣化效應。在本文的第五章也同時探討了不同非晶矽基太陽能電池的溫度係數。 本文的最後一個主題係研究矽鰭式場效電晶體的電性及熱效應分析。為了遵循摩爾定律,當互補式金屬氧化物半導體技術持續微縮到22奈米以下,傳統電晶體將達到其根本性的限制。而為了更有效的控制電晶體特性及降低短通道效應,像鰭式場效電晶體這樣的全空乏多閘極元件便被提出。而元件在操作時會產生熱,對於晶片的可靠度及壽命有著非常大的影響,且當元件尺寸持續微縮時,此類奈米尺寸元件的熱效應研究變得更加重要而需要考慮其影響。塊狀基板矽鰭式場效電晶體在高溫時的電特性與傳統電晶體相同,其汲極電流會隨著溫度上升而下降。而多根鰭的矽鰭式場效電晶體也會因散熱路徑較單根少而使元件溫度較高。但多鰭的鰭式場效電晶體溫度可藉由改變連線的組成材料而大幅降低。 | zh_TW |
dc.description.abstract | In this dissertation, three reliability topics are investigated on polycrystalline silicon thin-film transistors, amorphous silicon solar cells and silicon FinFETs.
Static bias temperature instability has becomes a crucial reliability issue to accurately ensure the device stability and lifetime for metal-oxide-semiconductor field-effect transistors (MOSFETs) and thin-film transistors (TFTs). For NBTI of p-channel poly-Si TFTs, the negative threshold voltage is mainly attributed to the generation of donor type interface traps. However, the threshold voltage shift will be under- or overestimate if the measurement methods have delay time. In this dissertation, different measurement methods of negative bias temperature instability on poly-Si TFTs are investigated. An improved method is proposed to simultaneously extract the threshold voltage shift (ΔVT) and mobility degradation. For the second part of this dissertation, the reliability of amorphous silicon based solar cells will be discussed. Recent years, the global photovoltaic industries actively invested the development of the thin film solar cells to reduce production cost. Among these thin film technologies, the most developed is amorphous silicon solar cells. However, the amorphous silicon based solar cells degrades after light soaking due to the generation of more silicon dangling bonds. Fortunately, the light-induced degradation can be partially recovered by applying reverse bias at moderate temperature. In Chapter 3 and Chapter 4, reverse bias recovery of light-induced degraded amorphous silicon based solar cells are investigated. The experimental results show that efficiency recovery increases with the field strength. And a surprisingly low bias voltage is found for recovery on micromorph solar cells. In Chapter 5, the temperature coefficient of amorphous silicon based solar cells are also investigated. In the last part of this dissertation, the electrical characteristics and thermal effect of silicon FinFETs are investigated. As CMOS technology scales down to 22nm, traditional planar transistor architectures have reached a fundamental limit to continue the Moore’s law. The fully-depleted multi-gate device such as FinFET has been proposed to improve transistor electrostatics, offering better performance at lower supply voltages and significantly reduced short channel effects. The transistors generate heat when operating, and have a significant impact on the chip’s reliability and long term longevity. Besides, as the channel dimensions continue to shrink, the heating effect of these nano-dimension devices also become critical and should be considered. The electrical characteristics of bulk FinFET shows the same behavior with planar structure at high temperature. The on-current decreases with increasing temperature after subtracting the threshold voltage shift. Multi-fin FinFET shows higher lattice temperature than 1-fin FinFET due to less heat transfer path. The maximum lattice temperatures of multi-fin FinFETs can be reduced by changing the constituted materials of interconnect. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T00:09:49Z (GMT). No. of bitstreams: 1 ntu-102-F95943129-1.pdf: 2363656 bytes, checksum: 22783ef0a65a0b23b112d4c398e6930b (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | Publication List (Hung-Chang Sun) i
中文摘要 vi ABSTRACT viii CONTENTS xi LIST OF FIGURES xv LIST OF TABLES xxii Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Organization of the Dissertation 3 Chapter 2 Negative Bias Temperature Instability of P-Channel Poly-Si TFTs 8 2.1 Introduction 8 2.2 Introduction of Negative Bias Temperature Instability 9 2.2.1 Theoretical Power Law Exponent 13 2.3 Experiment Setup 20 2.3.1 Device Fabrication Process 20 2.3.2 Experiments of Negative Bias Temperature Instability on TFT 21 2.4 Recovery Effect of Measurement 23 2.5 Measurement Methods of Bias Temperature Instability 24 2.5.1 Traditional Measurement Method 24 2.5.2 ID,lin Measurement Method 25 2.5.3 Improved On-The-Fly (OTF) Measurement Method 29 2.6 Comparison of Different Measurement Techniques 32 2.7 Summary 36 Reference 37 Chapter 3 Degradation and Recovery of a-Si Based Solar Cells 41 3.1 Introduction 41 3.2 Light-Induced Degradation of a-Si Based Solar Cells 43 3.2.1 Structure of Single-Junction a-Si Solar Cell 43 3.2.2 Degradation Mechanism 44 3.2.3 Light-Induced Degradation of a-Si Solar Cells 47 3.2.4 Light-Induced Degradation of a-SiGe Solar Cells 48 3.3 Recovery of a-Si Based Solar Cells 49 3.3.1 Recovery Mechanism 49 3.3.2 Recovery of a-Si Solar Cells 51 3.3.3 Recovery of a-SiGe Solar Cells 52 3.4 Summary 55 Reference 56 Chapter 4 Voltage Bias Recovery of Light-Induced Degraded Micromorph Solar Cells 60 4.1 Introduction 60 4.2 Experiment Setup 61 4.3 Light-induced Degradation and Reverse Bias Recovery of Micromorph Solar Cells 62 4.3.1 Device Structure of Micromorph Solar Cell 63 4.3.2 Light-Induced Degradation of Micromorph Solar Cells 64 4.3.3 Recovery of Micromorph Solar Cells 65 4.3.4 The Low Voc of Micromorph Solar Cells 68 4.4 Comparison of Degraded Micromorph and a-Si Solar Cells with Reverse Bias 71 4.4.1 EQE and J-V Characteristics Analysis 71 4.4.2 Recovery Results for Various Reverse Voltages 73 4.4.3 Electric Field Simulation and SIMS Profile 74 4.4.4 Summary 76 4.5 Summary 77 Reference 78 Chapter 5 Temperature Coefficient Analysis of the Thin-Film Solar Cells 82 5.1 Introduction 82 5.2 Temperature Coefficient of a-Si Based Solar Cells 83 5.3 Comparison of Single-Junction a-Si, pm-Si and Tandem pm-Si/μc-Si Solar Cells 87 5.3.1 The Property of pm-Si 87 5.4 Summary 95 Reference 96 Chapter 6 Thermal Effect Simulation of Si FinFET 100 6.1 Introduction 100 6.2 Physics model 101 6.2.1 Transport Equation 101 6.2.2 Quantization Model 103 6.2.3 Mobility Model 103 6.3 Electrical Characteristics Simulation of Bulk Si FinFET with Interconnect 109 6.3.1 Introduction of FinFET 109 6.3.2 Electrical Characteristics Analysis of Bulk Si FinFET 112 6.4 Thermal Simulation of Bulk Si FinFET 116 6.4.1 Boundary Condition 116 6.4.2 Thermal Simulation 117 6.5 Summary 120 Reference 121 Chapter 7 Conclusion and Future Work 125 7.1 Conclusion 125 7.2 Future Work 129 | |
dc.language.iso | en | |
dc.title | 可靠度研究:複晶矽薄膜電晶體、非晶矽太陽能電池及矽鰭式場效電晶體 | zh_TW |
dc.title | Reliability Study:Polycrystalline Silicon Thin Film Transistor, Amorphous Silicon Solar Cell and Silicon FinFET | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 林鴻志,江雨龍,胡振國,陳敏璋,林中一 | |
dc.subject.keyword | 複晶矽薄膜電晶體,非晶矽太陽能電池,負偏壓溫度不穩定性,光致劣化,鰭式場效電晶體,熱效應, | zh_TW |
dc.subject.keyword | poly-Si TFTs,a-Si solar cells,negative bias temperature instability (NBTI),light-induced degradation,FinFETs,thermal effect, | en |
dc.relation.page | 129 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2013-08-08 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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