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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17157完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 劉致為(CheeWee Liu) | |
| dc.contributor.author | Wen-Te Yeh | en |
| dc.contributor.author | 葉文德 | zh_TW |
| dc.date.accessioned | 2021-06-07T23:58:52Z | - |
| dc.date.copyright | 2013-08-26 | |
| dc.date.issued | 2013 | |
| dc.date.submitted | 2013-08-16 | |
| dc.identifier.citation | [1] Rozalia Beica, Charles Sharbono, Tom Ritzdorf, “Through Silicon Via Copper
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Tichenor, et al., “10x reduction imaging at 13.4nm,” OSA Proc. 23 89-97 [9] Yen-Chun Fu , et al., IEDM 2008 ,p.432 [10] D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, S. T. Pantelides, A. Dimoulas, G. Mavrou, A. Sotiropoulos, and Y. Panayiotatos, “Total Dose Response of Ge MOS Capacitors With HfO2/Dy2O3 Gate Stacks,” [11] R. Gronheid and M. J. Leeson., “Extreme ultraviolet interference lithography as applied to photoresist studies. ” MEMS MOEMS 8 (2009) 021205 [12] G.F.J. Garlick, J.E. Nicholls and A.M. Ozer ‘Electrons spin resonance of electron irradiated germanium dioxide’ J. Phys. C: Solid State Phys. 4 2230 [13] H. -S. Lan, Y.-T. Chen, Hung-Chih Chang, J.-Y. Lin, William Hsu, W. -C. Chang, and C. W. Liu, 'Electron scattering in Ge metal-oxide-semiconductor field-effect transistors,' [14] D.L. Griscom “Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structure” J. Appl. Phys. [15] M.R. Shaneyfelt, et al., ‘Challenges in Hardening Technologies Using Shallow-Trench Isolation’ IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2584-2591, Dec. 1998. [16] G.U. Youk, et al., ‘Radiation-Enhanced Short Channel Effect due to Multi-Dimensional Influence from charge at Trench Isolation Oxides’ IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1830-1835, Dec. 1999. [17] N. Guofu et al., ‘Total Dose Effects on the Shallow-Trench Isolation Leakage Current Characteristics in a 0.35 um SiGe BiCOMS Technology’ IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1841-1847, Dec. 1999. [18] F. Faccio and G. Cervelli ‘Radiation-Induced Edge Effects in Deep Submicron CMOS Transistors.’ IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2413-2420, Dec. 2005. [19] S.C. Witczak et al., ‘Dose-Rate Sensitivity of Modern n-MOSFETs’ IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2602-2608, Dec. 2005. [20] S.R. Kulkarrni et al., ‘Total Ionizing Dose Effects on Ge pMOSFETs With High-k Gate stack: On/Off Current Ratio’ IEEE Tran. Nucl. Sci., vol.56 no. 4, pp. 1926-1930, Aug. 2009 [21] Bing-Yue Tusi, ‘Effects of EUV Irradiation on Poly-Si SONOS NVM Devices’ IEEE Journals and Magazines., vol.32 no.5 pp.614-616, May 2011 [22] G.F.J. Garlick, J.E. Nicholls and A.M. Ozer ‘Electrons spin resonance of electron irradiated germanium dioxide’ J. Phys. C: Solid State Phys. 4 2230 [23] D.L. Griscom “Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structure” J. Appl. Phys. 58, 2524 (1985). [1] Pak, Jun So, Chunghyun Ryu, and Joungho Kim. 'Electrical characterization of trough silicon via (TSV) depending on structural and material parameters based on 3D full wave simulation.' Electronic Materials and Packaging, 2007. EMAP 2007. International Conference on. IEEE, 2007. [2] Helmy, Ahmed, and Mohammed Ismail. 'The CHIP-a design guide for reducing substrate noise coupling in rf applications.' Circuits and Devices Magazine, IEEE 22.5 (2006): 7-21. [3] Cho, Jonghyun, et al. 'Through silicon via (TSV) shielding structures.' Electrical Performance of Electronic Packaging and Systems (EPEPS), 2010 IEEE 19th Conference on. IEEE, 2010. [4] Cho, Jonghyun, et al. 'Modeling and analysis of through-silicon via (TSV) noise coupling and suppression using a guard ring.' Components, Packaging and Manufacturing Technology, IEEE Transactions on 1.2 (2011): 220-233. [5] Kim, Joohee, Jonghyun Cho, and Joungho Kim. 'TSV modeling and noise coupling in 3D IC.' Electronic System-Integration Technology Conference (ESTC), 2010 3rd. IEEE, 2010. [6] Cho, Jonghyun, et al. 'Guard ring effect for through silicon via (TSV) noise coupling reduction.' CPMT Symposium Japan, 2010 IEEE. IEEE, 2010. [1] Pak, Jun So, Chunghyun Ryu, and Joungho Kim. 'Electrical characterization of trough silicon via (TSV) depending on structural and material parameters based on 3D full wave simulation.' Electronic Materials and Packaging, 2007. EMAP 2007. International Conference on. IEEE, 2007. [2] Helmy, Ahmed, and Mohammed Ismail. 'The CHIP-a design guide for reducing substrate noise coupling in rf applications.' Circuits and Devices Magazine, IEEE 22.5 (2006): 7-21. [3] Cho, Jonghyun, et al. 'Through silicon via (TSV) shielding structures.' Electrical Performance of Electronic Packaging and Systems (EPEPS), 2010 IEEE 19th Conference on. IEEE, 2010. [4] Cho, Jonghyun, et al. 'Modeling and analysis of through-silicon via (TSV) noise coupling and suppression using a guard ring.' Components, Packaging and Manufacturing Technology, IEEE Transactions on 1.2 (2011): 220-233. [5] Kim, Joohee, Jonghyun Cho, and Joungho Kim. 'TSV modeling and noise coupling in 3D IC.' Electronic System-Integration Technology Conference (ESTC), 2010 3rd. IEEE, 2010. [6] Cho, Jonghyun, et al. 'Guard ring effect for through silicon via (TSV) noise coupling reduction.' CPMT Symposium Japan, 2010 IEEE. IEEE, 2010. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17157 | - |
| dc.description.abstract | 在本篇論文，我們研究了極紫外光對不同元件的影響，分別為鍺場效電晶體以及銦鎵鋅氧化物薄膜電晶體。在下個世代，極紫外光為微影技術之重要關鍵，而鍺場效電晶體亦可能成為取代矽的半導體。在極紫外光照射後，鍺場效電晶體主要的影響，由於極紫外光對於氧化層與鍺及二氧化鍺介面狀態電荷造成的影響，而產生新的電荷，進而影響整個元件。這些電荷將會造成次臨界擺幅及臨界電壓之改變，甚至電流的變化。這些介面狀態會靠近傳導帶，而造成P型/N型場效電晶體之不同影響。其次，我們使用不同閘極長度之電晶體去分析極紫外光之影響，以及銦鎵鋅氧化物薄膜電晶體去分析對薄膜電晶體的影響程度。
第二部分，為了遵守摩爾定律，我們將單位面積之電晶體數目，ㄖ不斷的縮小，然而，微影技術卻會在22奈米之後，會漸漸遇到物理極限。因此，我們需要更多技術來解決這個問題。其中一種，為三維封裝積體電路，例如矽穿孔技術。矽穿孔用銅來充填，用來連接不同晶片之間訊號的傳遞。我們試著把電磁波以及半導體元件之模擬結合。我們研究矽穿孔技術的電容-電壓曲線以及改變不同結構來探討對訊號傳導之影響。讓其可以適用於半導體工業的運用。 | zh_TW |
| dc.description.abstract | First part of this thesis is investigating the effect of Extreme Ultra Violet (EUV) on high performance Ge MOSFETs for the following considering devices which will be fabricated by Extreme Ultra Violet Lithography (EUVL). The main degradations of MOSFETs are fixed charges in oxide layer and interface state near Ge/GeO2, which will result in the degradation of threshold voltage and sub-threshold swing. The creation of interface state of Ge/GeO2 under EUV irradiation is near conduction band. Therefore, the degradation of n-MOSFETs is much more severer than p-MOSFETs. The numbers of transistor in the circuit and performance would be doubled every eighteen months. And we also use gate length spilt and IGZO TFT to analysis the model. It matches our model in this work.
Second part, to follow Moore’s law, we scaled down the transistor in the past, but the lithography technology beyond 22nm node may suffer from bottleneck. There are some technologies as solutions to the problems, one is three dimension structure likes FinFET, and another is three dimension package likes TSVs. TSVs may be filled with metal to connect the signal. We promote the model from Sentaurus simulation results and combine EM wave simulation results to make sure TSV behavior in the real case. We do the capacitor-voltage curve and depletion calculation for preparing loss mechanism. We also adjust different kinds of the TSV conditions and enhance the full model of TSVs, such as guard ring width/ depth, input voltage, and load impedance. To sum up, we want to let the TSVs designed in IC circuit in the industry. The model should be right. This is our work. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T23:58:52Z (GMT). No. of bitstreams: 1 ntu-102-R00941080-1.pdf: 2791863 bytes, checksum: 6219ef087e6ed231d08b22c1761d70b8 (MD5) Previous issue date: 2013 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
誌謝 ii 中文摘要 iii ABSTRACT iv CONTENTS v LIST OF FIGURES vii LIST OF TABLES ix Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Organization 3 1.3 Reference 4 Chapter 2 Analysis of Extreme Ultra Violet effect on Ge MOSFETs 5 2.1 Introduction 5 2.1.1 Motivation 6 2.2 Device fabrication and experimental setup 7 2.2.1 Fabrication of n/p type MOSFETs 7 2.2.2 EUV Irradiation setup and conditions 8 2.2.3 Measurement setup 11 2.3 Effects of Extreme Ultra Violet on p / n type MOSFETs 15 2.3.1 Radiation Impact on Germanium MOSFETs 15 2.3.2 Radiation Impact with Split Gate Length 22 2.4 Effects of Extreme Ultra Violet on IGZO TFT 23 2.5 Summary and Conclusions 27 2.6 Reference 29 Chapter 3 Analytical Model of Through Silicon Vias (TSVs) 32 3.1 Introduction 32 3.1.1 The development of 3DICs 32 3.1.2 3DIC processes 33 3.2 Simulation Structures 36 3.2.1 Analytical Model for TSVs 36 3.2.2 Simulation Structure 39 3.3 Results 41 3.4 Summary and Conclusion 45 3.5 References 46 Chapter 4 Noise Coupling Characteristics of Through Silicon Vias (TSVs) 49 4.1 Introduction 49 4.1.1 Introduction to TSV Insertion Loss 49 4.2 Simulation Results 49 4.2.1 Delay Behavior of TSVs 49 4.2.2 Insertion Loss of TSVs 52 4.3 Summary and Conclusions 62 4.4 References 63 Chapter 5 Summary and Conclusion 64 5.1 Contributions of This Work 64 5.2 Future work 65 | |
| dc.language.iso | en | |
| dc.subject | 矽穿孔模型建立 | zh_TW |
| dc.subject | 極紫外光 | zh_TW |
| dc.subject | 極紫外光穩定度 | zh_TW |
| dc.subject | 矽穿孔電性參數 | zh_TW |
| dc.subject | TSV electrical parameter | en |
| dc.subject | TSV loss mechanism | en |
| dc.subject | EUV | en |
| dc.subject | EUV stability | en |
| dc.title | 極紫外光對鍺場效電晶體及薄膜電晶體的影響分析與矽穿孔技術之模型建立 | zh_TW |
| dc.title | Analysis of effect of EUV on Ge MOSFET and IGZO TFT and Modeling of Through Silicon Vias | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 101-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林鴻志,張守進,張廖貴術 | |
| dc.subject.keyword | 極紫外光,極紫外光穩定度,矽穿孔電性參數,矽穿孔模型建立, | zh_TW |
| dc.subject.keyword | EUV,EUV stability,TSV electrical parameter,TSV loss mechanism, | en |
| dc.relation.page | 65 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2013-08-17 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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