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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16881完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林清富(Ching-Fuh Lin) | |
| dc.contributor.author | Chien Lee | en |
| dc.contributor.author | 李謙 | zh_TW |
| dc.date.accessioned | 2021-06-07T23:48:45Z | - |
| dc.date.copyright | 2014-03-09 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-02-14 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16881 | - |
| dc.description.abstract | 在第一個部分中，我成功地利用全溶液製程的方式在c-plane藍寶石基板上成長出高品質且平整的單晶氧化鋅奈米柱陣列，並利用鍍金後以退火溫度900℃退火一小時的製程處理，使氧化鋅種子層的表面形貌平坦化，將其粗糙度rms value從2.3奈米降低到0.46奈米。隨著退火溫度的提高，PL頻譜的氧化鋅主要放光強度增加，缺陷放光降低，而XRD頻譜強度也從43.6K提升至77.8K，且其氧化鋅c軸方向的半高寬(FWHM)可以從0.1531°降低到0.1326°，所以藉由鍍金後以退火溫度900℃退火一小時的製程處理，氧化鋅奈米柱陣列的單晶性、結晶性與準直性都有顯著地增加。
在第二個部分中，我藉由添加不同濃度的氯化鉀溶液來調整水熱法生長氧化鋅奈米柱陣列的成長環境，成功地控制了氧化鋅奈米柱陣列的形貌，包括柱長、柱徑、柱間距與柱密度。統和這些因子，計算出長柱所增加的單位面積填入PTB7:PC71BM等效體積(nm3/nm2)。在有機太陽能電池的應用上，氧化鋅奈米柱有增加主動層有效利用區域的效益，透過控制氧化鋅奈米柱和主動層接觸的單位面積填入的主動層等效體積(nm3/nm2)，以及探討柱間距對於主動層滲入氧化鋅奈米柱的影響，可以大幅增加元件短路電流和轉換效率。對於PTB7:PC71BM倒置結構太陽能電池，最佳的長柱條件為使用KCl添加濃度為25mM來成長氧化鋅奈米柱陣列，可以抑制水平方向的成長速度，讓其長柱能大幅提升有機主動層中載子利用的效率，在旋塗主動層之後，有別於一般倒置結構，氧化鋅從電子傳輸層可以發展為電子傳輸通道，降低了電子電洞對複合的機會，也因此可以更有效的利用太陽光，產生更多的光電流，將使太陽能電池元件短路電流從平面的15.8mA/cm2，又能進一步的提升到16.3mA/cm2，而元件光電轉換效率從7.03%提升到7.46%。值得一提的是，此方法因為是作電子傳輸層的形貌改善，因此和有機主動層內部的形貌控制能夠獨立操作，而對於元件表現的影響也能夠加成。 在第三個部分中，改變成長時間找出最適合的氧化鋅奈米柱陣列長度，從元件各參數的表現來看，可以知道成長時間90分鐘有最佳轉換效率，從7.46%提升到7.95%，其原因是來自於較高的短路電流密度，電流可以從原本的16.3mA/cm2提升到17.6mA/cm2，由於合適的柱長與柱間距讓主動層溶液能完全滲入底部，因此造成短路電流密度上升的結果。在主動層最佳化的結果中，由於較快的轉速使得主動層薄膜更薄，降低了電子電洞對複合的機會，短路電流密度也因此獲得提升，元件效率從7.95％提昇至8.12％。最後在預塗PC71BM的實驗結果中，可以看到其短路電流密度增加至18.1mA/cm2，且填充因子與串並聯電阻都有更好的表現，讓整體效率提升到8.23%，其原因應該跟先旋塗上的PC71BM有關係，藉由多了一層的PC71BM來阻擋電洞，讓電子更容易往氧化鋅奈米柱的方向傳導，而正確的載子傳遞方向在元件表現上即為更多的載子可以被有效的傳遞出來，損耗減少，造成填充因子與短路電流密度上升，進而提升效率。最後，根據第四章對主動層等效滲入體積的分析，可以發現KCl添加濃度在0~25mM的區間內所成長的氧化鋅奈米柱陣列，可能有更適合有機太陽能電池的表面形態，使得整體元件的表現更佳，因此針對不同的KCl添加濃度所成長的氧化鋅奈米柱陣列搭配成長時間90分鐘、主動層轉速1500轉及預塗PC71BM的製程，在KCl添加濃度在25mM的長柱條件下仍有最佳的元件效率，其短路電流密度與填充因子分別為18.0mA/cm2和64.8%並不是最高，但在開路電壓的提升下，讓整體效率提升到8.39%，其原因應該跟先旋塗上的PC71BM有關係，此一步驟可以增加在氧化鋅層上方之PC71BM濃度可以增加施體(Donor)與受體(Acceptor)的垂直相分離，讓此部分實驗的開路電壓(Voc)有明顯的提升。 | zh_TW |
| dc.description.abstract | In the first part, I successfully used the solution process to grow well-aligned and high quality single-crystal ZnO nanorod arrays on c-plane sapphire substrates by Au-layer annealing at 900℃ for one hour. The surface morphology of the ZnO seed layer is planarized, the roughness rms value decreased from 2.3 nm to 0.46 nm. With increasing annealing temperature, the ZnO main peak intensity of PL spectra is increased and the defect peak intensity is decreased. The XRD spectrum intensity also increased from 43.6K to 77.8K and the FWHM can be reduced from 0.1531 ° to 0.1326°. By Au-layer annealing at 900℃ for one hour treatment, crystallinity and alignment of ZnO nanorod arrays have significantly increased.
In the second part, I found a method to effectively control the ZnO nanorod array morphology. The ZnO nanorod arrays morphology parameters, including length, diameter, spacing, and density, were able to be controlled by adding different concentrations of potassium chloride in a growth-promoting solution to create different environments for hydrothermal growth. I also found that the contact area between ZnO nanorod arrays and the active layer could be maximized with this ZnO nanorod arrays morphology control method, and the condition of the active infiltration could be improved. As a result, PTB7:PC71BM low-bandgap solar cells perform high short-circuit current density 16.3mA/cm2, and the device efficiency improved to 7.46%. In the third section, I changed the growth time to find the most suitable ZnO nanorods arrays length. From the performance of each parameter, the best growth time is 90 minutes. Since the appropriate length and density, the active layer can fully infiltrate to the bottom. The conversion efficiency increased from 7.46% to 7.95 % and the short-circuit current density also increased from 16.3mA/cm2 to 17.6mA/cm2. I also optimized the thickness of active layer, and enhanced the PCE of ITO/ZnO NRAs/PTB7:PC71BM/MoO3/Ag to 8.12% successfully. Finally, we pre-coated PC71BM to increase the short-circuit current density to 18.0mA/cm2 and enhanced PCE to 8.39%. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T23:48:45Z (GMT). No. of bitstreams: 1 ntu-103-R00941066-1.pdf: 4430688 bytes, checksum: efeac9f94bfb57a403e3a5e11e575ebc (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 口試審定書 .................................................................................................................. I
致謝 ............................................................................................................................ II 中文摘要 ................................................................................................................... III ABSTRACT ................................................................................................................ V 目錄 ......................................................................................................................... VII 圖目錄 ....................................................................................................................... IX 表目錄 ..................................................................................................................... XII 第一章 緒論 ............................................................................................................... 1 1.1 氧化鋅奈米結構簡介 .................................................................................. 1 1.2 文獻回顧 ...................................................................................................... 3 1.3 研究動機 ...................................................................................................... 6 1.4 論文導覽 ...................................................................................................... 8 第二章 氧化鋅薄膜以及奈米柱的製作流程 ......................................................... 10 2.1 簡介 ............................................................................................................ 10 2.2 氧化鋅薄膜製作與流程 ............................................................................ 13 2.3 氧化鋅奈米柱製作與流程 ........................................................................ 14 2.4 實驗儀器的介紹與架設 ............................................................................ 16 第三章 在藍寶石基板上製作氧化鋅奈米柱陣列及特性分析 ............................. 24 3.1 實驗動機 .................................................................................................... 24 3.2 實驗步驟 .................................................................................................... 25 3.2.1 溶液配置 ......................................................................................... 26 3.2.2 元件製作流程 ................................................................................. 27 3.3 結果與討論 ................................................................................................ 27 3.3.1 氧化鋅薄膜在不同退火條件下對成長氧化鋅奈米柱陣列之影響與觀察 ........................................................................................................... 27 3.3.2 在相同退火時間下退火溫度對氧化鋅奈米柱陣列表面形態改變影響與觀察 ................................................................................................... 29 3.4 結論 ............................................................................................................ 32 第四章 添加氯化鉀來控制氧化鋅奈米柱陣列的形貌並應用於倒製有機太陽能電池 ............................................................................................................................... 33 4.1 太陽能電池簡介 ........................................................................................ 33 4.1.1 太陽能電池工作原理 ..................................................................... 33 4.1.2 太陽能電池各項參數表現定義 ..................................................... 35 4.2 有機高分子太陽能電池 ............................................................................ 37 4.2.1 有機高分子太陽能電池工作機制 ................................................. 37 4.2.2 有機高分子太陽能電池結構演進 ................................................. 38 4.2.3 有機高分子太陽能電池材料 ......................................................... 40 4.2.4 有機高分子太陽能電池主動層結構發展....................................... 43 4.3 低能隙高分子材料PTB7介紹 ................................................................... 45 4.4 實驗動機 .................................................................................................... 46 4.5 實驗步驟 .................................................................................................... 46 4.5.1 溶液配置 ......................................................................................... 47 4.5.2 元件製作流程 ................................................................................. 48 4.6 結果與討論 ................................................................................................ 50 4.6.1 不同濃度的氯化鉀溶液對氧化鋅奈米柱陣列形貌之影響與觀察 ............................................................................................................... 50 4.6.2 製作倒置有機太陽能電池之元件表現 ......................................... 54 4.6.3 量化分析氧化鋅奈米柱形貌對於元件的影響............................... 59 4.7 結論 ............................................................................................................ 60 第五章 氧化鋅奈米柱陣列優化後在元件上的應用 ............................................. 62 5.1 實驗動機 .................................................................................................... 62 5.2 實驗步驟 .................................................................................................... 62 5.2.1 溶液配置 ......................................................................................... 63 5.2.2 元件製作流程 ................................................................................. 64 5.3 結果與討論 ................................................................................................ 67 5.3.1 相同氯化鉀添加濃度不同成長時間之氧化鋅奈米柱陣列形貌... 67 5.3.2 製作成倒置有機太陽能電池之元件表現 ..................................... 68 5.3.3 主動層轉速最佳化提升效率 ......................................................... 75 5.3.4 預塗PC71BM提升主動層的垂直向分離 ....................................... 77 5.3.5 結合上述製程針對不同KCl濃度進行分析.................................... 80 5.4 結論 ............................................................................................................ 83 第六章 結論與未來展望 ......................................................................................... 84 6.1 結論 ............................................................................................................ 84 6.2 未來展望 .................................................................................................... 86 參考文獻 ................................................................................................................... 89 | |
| dc.language.iso | zh-TW | |
| dc.subject | 形貌控制 | zh_TW |
| dc.subject | 溶液製程 | zh_TW |
| dc.subject | 鍍金退火製程 | zh_TW |
| dc.subject | 氧化鋅奈米柱 | zh_TW |
| dc.subject | 高分子太陽能電池 | zh_TW |
| dc.subject | 倒置結構 | zh_TW |
| dc.subject | 低能隙材料 | zh_TW |
| dc.subject | 氯化鉀 | zh_TW |
| dc.subject | 主動層滲入 | zh_TW |
| dc.subject | 載子傳輸 | zh_TW |
| dc.subject | potassium chloride | en |
| dc.subject | morphology control | en |
| dc.subject | carrier transport | en |
| dc.subject | active layer infiltrate | en |
| dc.subject | solution process | en |
| dc.subject | Au-layer annealing | en |
| dc.subject | ZnO nanorods | en |
| dc.subject | polymer solar cells | en |
| dc.subject | inverted structure | en |
| dc.subject | low-bandgap | en |
| dc.title | 不同形貌的氧化鋅奈米結構應用於光電元件之研究 | zh_TW |
| dc.title | Applications of Zinc Oxide Nanostructure with Different Morphology for Optoelectronic Devices | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳奕君(I-Chun Cheng),黃鼎偉(Ding-Wei Huang),吳肇欣(Chao-Hsin Wu) | |
| dc.subject.keyword | 溶液製程,鍍金退火製程,氧化鋅奈米柱,高分子太陽能電池,倒置結構,低能隙材料,氯化鉀,形貌控制,主動層滲入,載子傳輸, | zh_TW |
| dc.subject.keyword | solution process,Au-layer annealing,ZnO nanorods,polymer solar cells,inverted structure,low-bandgap,potassium chloride,morphology control,active layer infiltrate,carrier transport, | en |
| dc.relation.page | 96 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2014-02-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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| ntu-103-1.pdf 未授權公開取用 | 4.33 MB | Adobe PDF |
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