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???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
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dc.contributor.advisor | 王暉(Huei Wang) | |
dc.contributor.author | Ze-Yu Liao | en |
dc.contributor.author | 廖澤宇 | zh_TW |
dc.date.accessioned | 2021-06-07T18:17:46Z | - |
dc.date.copyright | 2012-03-19 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-02-08 | |
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Rhee, “Wideband and high gain cascode amplifier using metamorphic HEMT for millimeter-wave applications,” IEEE European Microwave Integrated Circuits Conference, pp. 371-374, Sept. 2006. [25] 陳炳佑撰,三、五族電晶體模型與Ka頻段放大器設計,國立台灣大學電機工程研究所碩士論文,2002年。 [26] 黃品澄撰,寬頻微波功率放大器之研究,國立台灣大學電信工程學研究所博士論文,2011年。 [27] R. Anholt, S. Swirhum, “Equivalent-circuit parameter extraction for cold GaAs MESFET’s,” IEEE Trans. Microwave Theory and Tech., vol. 39, no. 7, pp. 1243-1247, July 1991. [28] N. Rorsman, M. Garcia, C. Karlsson, and H. Zirath, “Accurate small-signal modeling of HFET’s for millimeter-wave applications,” IEEE Trans. Microwave Theory and Tech., vol. 44, no. 3, pp. 432-437, March 1996. [29] I. Angelov, H. Zirath, N. Rorsmann, “A new empirical nonlinear model for HEMT and MESFET devices,” IEEE Trans. Microwave Theory and Tech., vol. 40, No. 12, Dec. 1992. [30] I. Angelov, L. Bengtsson, M. Garcia, “Extensions of the Chalmers nonlinear HEMT and MESFET model,” IEEE Trans. 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Streit, “A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator,” IEEE Microwave and Guided Wave Letters, vol. 4, pp. 135-137, May 1994. [37] X. Guan and A. Hajimiri, “A 24-GHz CMOS front-end,” IEEE J. Solid-State Circuits, vol. 39, no. 2, pp. 368-373, Feb. 2004. [38] S. Trotta, H. Knapp, K. Aufinger, T.F. Meister, J. Bock, W. Simburger, A.L. Scholtz, “A Fundamental VCO with integrated output buffer beyond 120 GHz in SiGe bipolar technology,” IEEE MTT-S international Microwave Symposium, pp. 645-648, Jun. 2007. [39] S.T. Nicolson, K.H.K. Yau, K.A. Tang, P. Chevalier, A. Chantre, B. Sautreuil, and S.P. Voinigescu, “Design and scaling of SiGe BiCMOS VCOs above 100 GHz,” IEEE BCTM, pp. 1-4, Oct. 2006. [40] E. Socher and S. Jameson, “Wide tuning range W-band Colpitts VCO in 90 nm CMOS,” Electronics Letters, vol. 47, no. 22, pp. 1227-1229, Oct. 2011. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16499 | - |
dc.description.abstract | 本篇論文探討了兩個低雜訊放大器與一個壓控振盪器之研究,分別包含採用0.18微米互補式金屬氧化物半導體(CMOS)製程的超寬頻(UWB)低雜訊放大器、採用0.15微米高速電子遷移率電晶體(pHEMT)製程的V頻段低雜訊放大器與75 GHz壓控振盪器。
論文第一部份呈現了UWB頻段低雜訊放大器設計,採用0.18微米CMOS製程,電路採用三級電路設計並使用共閘級組態來達到寬頻的輸入阻抗匹配與低雜訊。初始設計電路的量測小信號增益降低起因於許多問題,確認並改善問題之後,重新模擬與量測結果有很好的一致性。重新設計的低雜訊放大器電路改善了小信號增益與雜訊指數,此電路量測到1.9到11 GHz的3-dB 頻寬、最高達到17.7 dB的小信號增益與在UWB頻段3.3至3.8 dB的雜訊指數。 論文第二部份介紹了一個V頻段的低雜訊放大器,採用0.15微米 pHEMT製程,此電路使用兩級的疊接組態設計與GCPW架構來實現,量測的60-GHz小信號增益為22.8 dB,雜訊指數為4.3 dB。論文的第三部份描述了一個75-GHz的疊接壓控振盪器,採用0.15微米 pHEMT製程與GCPW架構,量測的壓控振盪頻率為83.63 至 86.78 GHz,與最高達到5.7 dBm的輸出功率,模擬與量測結果的不一致歸因於穩懋半導體公司的pHEMT製程電晶體模型在高頻不是非常準確性,因此重新萃取電晶體量測數據並且建立Angelov模型,以重新萃取的模型來做電路模擬,結果與量測有相當的一致性。 | zh_TW |
dc.description.abstract | This thesis investigates two low noise amplifiers and one voltage control oscillator, including an ultra-wide band (UWB) low noise amplifier using 0.18-μm complementary metal oxide semiconductor (CMOS) technology, a V-band low noise amplifier and a 75-GHz voltage control oscillator implemented in 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) technology.
The design of ultra-wideband low noise amplifiers using CMOS 0.18-μm technology is presented in the first part of this thesis. The circuit adopts three stage designs with common gate configuration as first stage to match wide band input impedance and low noise figure. The measured small signal gain of first design decreases due to several problems. Trouble-shooting procedure is presented and the re-simulation shows good consistence with measured data. The redesigned low noise amplifier improves the small signal gain and noise figure. The measured 3-dB bandwidth is from 1.9 to 11 GHz with 17.7-dB highest small signal gain and a 3.3 to 3.8-dB noise figure from 3.1 to 10.6 GHz. The second part of this thesis introduces a V-band low noise amplifier in 0.15-μm low noise pHEMT technology. This circuit is realized using two-stage cascode designs with grounded coplanar waveguide (GCPW) structure. The measured small signal gain is 22.8 dB at 60 GHz with 4.3-dB noise figure. The third part of this thesis describes a 75-GHz cascode voltage control oscillator in 0.15-μm low noise pHEMT technology with GCPW structure. The measured voltage control oscillation frequency is from 83.63 to 86.78 GHz with a maximum output power reached 5.7 dBm. The simulation and measurement are inconsistence due to the pHEMT device model provided by WIN is not very accurate at high frequency. Therefore, the Angelov model is established from the re-extractions of the measured device data, and the S-parameters and output power of the LNA and VCO circuits simulated using Angelov model show good consistence with measured data of both designs. | en |
dc.description.provenance | Made available in DSpace on 2021-06-07T18:17:46Z (GMT). No. of bitstreams: 1 ntu-101-R98942014-1.pdf: 5543923 bytes, checksum: 7286fca40576b0ab6408e8e90d4408e3 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS v LIST OF FIGURES viii LIST OF TABLES xx Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 2 1.3 Contribution 6 1.4 Thesis Organization 8 Chapter 2 Design of An UWB Common Gate Low Noise Amplifier in 0.18-μm CMOS Process 10 2.1 UWB Low noise Amplifier Circuit Design 11 2.1.1 Device Selection 11 2.1.2 Design of Low Noise Consideration 16 2.1.3 Design of Broadband Inter-stage Match 23 2.1.4 Simulated Results 28 2.2 Experimental Results 34 2.3 Troubleshooting 38 2.3.1 Metal Conductivity 38 2.3.2 Re-simulation of the Capacitor and Resistor 39 2.3.3 The Parasitic Effects of the Metal Lines near Transistor 40 2.3.4 Re-simulation Results versus Experimental Results 43 2.4 Redesign of UWB Low noise Amplifier Circuit 45 2.4.1 Circuit Design 45 2.4.2 Simulation Results 49 2.5 Experimental Results 55 2.6 Summary 59 Chapter 3 A V-Band Low Noise Amplifier with 24.3 dB Small Signal Gain using 0.15-μm GaAs pHEMT Process 61 3.1 V-band Low Noise Amplifier Circuit Design 62 3.1.1 Device Selection 62 3.1.2 Circuit Design 67 3.1.3 Simulation Results 72 3.2 Experimental Results 76 3.3 Discussions 80 3.4 Summary 96 Chapter 4 A 75-GHz Cascode GCPW Voltage Control Oscillator in 0.15-μm GaAs pHEMT Process 98 4.1 75-GHz Cascode GCPW Voltage Control Oscillator Circuit Design 98 4.1.1 Circuit Design 98 4.1.2 Simulation Results 105 4.2 Experimental Results 108 4.3 Discussions 111 4.4 Summary 117 Chapter 5 Conclusion 119 REFERENCE 121 | |
dc.language.iso | en | |
dc.title | 微波與毫米波低雜訊放大器及壓控振盪器之研究 | zh_TW |
dc.title | Research of Microwave/Millimeter-wave Low Noise Amplifiers and Voltage Control Oscillator | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃天偉(Tian-Wei Huang),林坤佑(Kun-You Lin),蔡政翰(Jeng-Han Tsai),章朝盛(Chau-Ching Chiong) | |
dc.subject.keyword | 低雜訊放大器,超寬頻,壓控振盪器,V頻段,高速電子遷移率電晶體, | zh_TW |
dc.subject.keyword | Low Noise Amplifier,Ultra-wideband,Voltage control oscillator,V-band,pseudomorphic high electron mobility transistor, | en |
dc.relation.page | 126 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2012-02-08 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
Appears in Collections: | 電信工程學研究所 |
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