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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 莊東漢(Tung-Han Chuang) | |
dc.contributor.author | Chun-Yen Lee | en |
dc.contributor.author | 李俊彥 | zh_TW |
dc.date.accessioned | 2021-06-07T18:07:30Z | - |
dc.date.copyright | 2012-07-26 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-07-21 | |
dc.identifier.citation | [1] G. E. Moore, 'Cramming more components onto integrated circuits,' Proceedings of the IEEE, vol. 86, pp. 82-85, 1998.
[2] K.N.Tu, 'Reliability challenges in 3D IC packaging technology,' Microelectronics Reliability, vol. 51, pp. 517-523, 2011. [3] Intel Corporation, '“Making of a Chip” Illustrations 22nm 3D/Trigate Transistors – Version,' January 2012. [4] H. Iwai, 'Roadmap for 22 nm and beyond,' Microelectronic Engineering, vol. 86, pp. 1520-1528, 2009. [5] A. Klumpp, R. Merkel, P. Ramm, J. Weber, and R. Wieland, 'Vertical system integration by using inter-chip vias and solid-liquid interdiffusion bonding,' Japanese journal of applied physics, vol. 43, pp. L829-830, 2004. [6] A. Klumpp, P. Ramm, and R. Wieland, '3D-integration of silicon devices: A key technology for sophisticated products,' 2010, pp. 1678-1683. [7] L. F. Eastman and U. K. Mishra, 'The toughest transistor yet [GaN transistors],' Spectrum, IEEE, vol. 39, pp. 28-33, 2002. [8] J. Johnson, E. Piner, A. Vescan, R. Therrien, P. Rajagopal, J. Roberts, J. Brown, S. Singhal, and K. Linthicum, '12 W/mm AlGaN-GaN HFETs on silicon substrates,' Electron Device Letters, IEEE, vol. 25, pp. 459-461, 2004. [9] G. Humpston, D. Jacobson, and S. Sangha, 'Diffusion soldering for electronics manufacturing,' Endeavour, vol. 18, pp. 55-60, 1994. [10] M. Quirk and J. Serda, Semiconductor manufacturing technology vol. 3: Prentice Hall New Jersey, 2001. [11] Inc. Applied Materials, 'An Introduction to 3D Packaging,' pp. 1-3, May 2009. [12] K. Sakuma, P. Andry, B. Dang, J. Maria, C. Tsang, C. Patel, S. Wright, B. Webb, E. Sprogis, and S. Kang, '3D chip stacking technology with low-volume lead-free interconnections,' 2007, pp. 627-632. [13] J. U. Knickerbocker, P. Andry, L. Buchwalter, A. Deutsch, R. Horton, K. Jenkins, Y. Kwark, G. McVicker, C. Patel, and R. Polastre, 'Development of next-generation system-on-package (SOP) technology based on silicon carriers with fine-pitch chip interconnection,' IBM Journal of Research and Development, vol. 49, pp. 725-753, 2005. [14] Y. Akasaka, 'Three-dimensional IC trends,' Proceedings of the IEEE, vol. 74, pp. 1703-1714, 1986. [15] H. Kurino, K. Lee, K. Sakuma, T. Nakamura, and M. Koyanagi, 'A new wafer scale chip-on-chip (w-coc) packaging technology using adhesive injection method,' Japanese journal of applied physics, vol. 38, p. 2406, 1999. [16] J. U. Knickerbocker, P. Andry, B. Dang, R. Horton, C. Patel, R. Polastre, K. Sakuma, E. Sprogis, C. Tsang, and B. Webb, '3D silicon integration,' 2008, pp. 538-543. [17] H. Y. Hsiao, C. M. Liu, H. Lin, T. C. Liu, C. L. Lu, Y. S. Huang, C. Chen, and K. Tu, 'Unidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copper,' Science, vol. 336, pp. 1007-1010, 2012. [18] 莊東漢, '擴散軟銲技術在電子封裝之應用,' 電子月刊, vol. 5, pp. 118-125, 1999. [19] S. Bader, W. Gust, and H. Hieber, 'Rapid formation of intermetallic compounds interdiffusion in the Cu---Sn and Ni---Sn systems,' Acta metallurgica et materialia, vol. 43, pp. 329-337, 1995. [20] R. T. DeHoff, Thermodynamics in Materials Science: CRC/Taylor & Francis, 2006. [21] P. Wang, J. S. Kim, and C. C. Lee, 'Fluxless wafer bonding in vacuum using electroplated Sn–Ag layers,' Electronics Packaging Manufacturing, IEEE Transactions on, vol. 30, pp. 155-159, 2007. [22] G. Humpston, D. Jacobson, and S. Sangha, 'Diffusion soldering: a new low temperature process for joining carat gold jewellery,' Gold Bulletin(Switzerland), vol. 26, pp. 90-104, 1993. [23] G. J. Snyder and E. S. Toberer, 'Complex thermoelectric materials,' Nature materials, vol. 7, pp. 105-114, 2008. [24] D. Jacobson and G. Humpston, 'Diffusion soldering,' Soldering & Surface Mount Technology, vol. 4, pp. 27-32, 1992. [25] J. S. Kim, T. Yokozuka, and C. C. Lee, 'Fluxless bonding of silicon to Ag-cladded copper using Sn-based alloys,' Materials Science and Engineering: A, vol. 458, pp. 116-122, 2007. [26] Y. C. Chen, W. W. So, and C. C. Lee, 'A fluxless bonding technology using indium-silver multilayer composites,' Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on, vol. 20, pp. 46-51, 1997. [27] H. H. Hsu, S. Y. Huang, T. C. Chang, and A. T. Wu, 'Nucleation and propagation of voids in microbumps for 3 dimensional integrated circuits,' Applied Physics Letters, vol. 99, pp. 251913-251913-3, 2011. [28] P. A. Baghurst, A. J. McMichael, N. R. Wigg, G. V. Vimpani, E. F. Robertson, R. J. Roberts, and S. L. Tong, 'Environmental exposure to lead and children's intelligence at the age of seven years,' New England journal of medicine, vol. 327, pp. 1279-1284, 1992. [29] H. Y. Lee, S. W. Jang, S. M. Lee, S. J. Lee, and H. K. Baik, 'Lithium storage properties of nanocrystalline Ni3Sn4 alloys prepared by mechanical alloying,' Journal of power sources, vol. 112, pp. 8-12, 2002. [30] D. Kim, J. Kim, G. L. Wang, and C. C. Lee, 'Nucleation and growth of intermetallics and gold clusters on thick tin layers in electroplating process,' Materials Science and Engineering: A, vol. 393, pp. 315-319, 2005. [31] N. Stoloff, C. Liu, and S. Deevi, 'Emerging applications of intermetallics,' Intermetallics, vol. 8, pp. 1313-1320, 2000. [32] C. C. Lee, P. J. Wang, and J. S. Kim, 'Are intermetallics in solder joints really brittle?,' 2007, pp. 648-652. [33] G. Anstis, P. Chantikul, B. R. Lawn, and D. Marshall, 'A critical evaluation of indentation techniques for measuring fracture toughness: I, direct crack measurements,' Journal of the American Ceramic Society, vol. 64, pp. 533-538, 1981. [34] L. Xu and J. H. L. Pang, 'Nano-indentation characterization of Ni–Cu–Sn IMC layer subject to isothermal aging,' Thin solid films, vol. 504, pp. 362-366, 2006. [35] I. Kovacs and G. Voros, 'On the mathematical description of the tensile stress-strain curves of polycrystalline face centered cubic metals,' International journal of plasticity, vol. 12, pp. 35-43, 1996. [36] G. Ghosh, 'Coarsening kinetics of NiSn scallops during interfacial reaction between liquid eutectic solders and Cu/Ni/Pd metallization,' Journal of applied physics, vol. 88, p. 6887, 2000. [37] W. Welch and K. Najafi, 'Nickel-tin transient liquid phase (TLP) wafer bonding for MEMS vacuum packaging,' 2007, pp. 1327-1328. [38] F. Bartels, J. Morris, G. Dalke, and W. Gust, 'Intermetallic phase formation in thin solid-liquid diffusion couples,' Journal of electronic materials, vol. 23, pp. 787-790, 1994. [39] H. O. T.B.Massalski, P.R.Subramanian and L.Kacprzak, 'Binary Alloy Phase Diagrams,' ASM International, 1990. [40] P. J. Wang, J. S. Kim, and C. C. Lee, 'A new bonding technology dealing with large CTE mismatch between large Si chips and Cu substrates,' 2008, pp. 1562-1568. [41] A. Bukaluk, 'AES depth profile studies of interdiffusion in the Ag Cu bilayer and multilayer thin films,' physica status solidi (a), vol. 118, pp. 99-107, 1990. [42] Y. W. Lin and K. L. Lin, 'The early stage dissolution of Ni and the nucleation of Ni–Sn intermetallic compound at the interface during the soldering of Sn–3.5 Ag on a Ni substrate,' Journal of applied physics, vol. 108, p. 063536, 2010. [43] Y. Tseng, M. Yeh, and T. Chuang, 'Interfacial reactions between liquid indium and nickel substrate,' Journal of electronic materials, vol. 28, pp. 105-108, 1999. [44] J. Li, P. Agyakwa, and C. Johnson, 'Kinetics of Ag3Sn growth in Ag–Sn–Ag system during transient liquid phase soldering process,' Acta Materialia, vol. 58, pp. 3429-3443, 2010. [45] V. Simić and Ž. Marinković, 'Room temperature interactions in Ag-metals thin film couples,' Thin solid films, vol. 61, pp. 149-160, 1979. [46] G. White, 'Thermal expansion of reference materials: copper, silica and silicon,' Journal of Physics D: Applied Physics, vol. 6, p. 2070, 1973. [47] R. C. Weast, M. J. Astle, and W. H. Beyer, CRC handbook of chemistry and physics vol. 69: CRC press Boca Raton, FL, 1988. [48] D. Kim and C. C. Lee, 'Fluxless bonding process in air using Sn–Bi–Au design,' Materials Science and Engineering: A, vol. 372, pp. 261-268, 2004. [49] J. S. Kim, T. Yokozuka, and C. C. Lee, 'Fluxless bonding of silicon to copper with high-temperature Ag-Sn joint made at low temperature,' 2006, p. 6 pp. [50] W. W. So and C. C. Lee, 'Fluxless process of fabricating In-Au joints on copper substrates,' Components and Packaging Technologies, IEEE Transactions on, vol. 23, pp. 377-382, 2000. [51] W. W. So, S. Choe, R. Chuang, and C. C. Lee, 'An effective diffusion barrier metallization process on copper,' Thin solid films, vol. 376, pp. 164-169, 2000. [52] N. Bosco and F. Zok, 'Critical interlayer thickness for transient liquid phase bonding in the Cu–Sn system,' Acta Materialia, vol. 52, pp. 2965-2972, 2004. [53] G. Humpston and D. M. Jacobson, Principles of soldering: ASM International, 2004. [54] H. H. Manko and A. J. Rafanelli, 'Solders and Soldering,' Journal of Electronic Packaging, vol. 124, p. 314, 2002. [55] A. Singh, D. A. Horsley, M. B. Cohn, A. P. Pisano, and R. T. Howe, 'Batch transfer of microstructures using flip-chip solder bump bonding,' 1997, pp. 265-268 vol. 1. [56] Y. T. Cheng, L. Lin, and K. Najafi, 'Localized bonding with PSG or indium solder as intermediate layer,' 1999, pp. 285-289. [57] K. M. Chu, J. S. Lee, H. S. Cho, H. H. Park, and D. Y. Jeon, 'A fluxless flip chip bonding for VCSEL arrays using silver coated indium solder bumps,' 2004, pp. 110-116. [58] X. Liu, R. W. Davis, L. C. Hughes, M. H. Rasmussen, R. Bhat, C. E. Zah, and J. Stradling, 'A study on the reliability of indium solder die bonding of high power semiconductor lasers,' Journal of applied physics, vol. 100, p. 013104, 2006. [59] S. Mathew, M. Osterman, M. Pecht, and F. Dunlevey, 'Evaluation of pure tin plated copper alloy substrates for tin whiskers,' Circuit World, vol. 35, pp. 3-8, 2009. [60] G. T. Galyon and L. Palmer, 'An integrated theory of whisker formation: The physical metallurgy of whisker formation and the role of internal stresses,' Electronics Packaging Manufacturing, IEEE Transactions on, vol. 28, pp. 17-30, 2005. [61] K. N. Tu, J. Suh, A. T. C. Wu, N. Tamura, and C. H. Tung, 'Mechanism and prevention of spontaneous tin whisker growth,' Materials transactions, vol. 46, pp. 2300-2308, 2005. [62] G. T. Galyon, 'Annotated tin whisker bibliography and anthology,' Electronics Packaging Manufacturing, IEEE Transactions on, vol. 28, pp. 94-122, 2005. [63] J. Smetana, 'Theory of Tin Whisker Growth:“The End Game”,' Electronics Packaging Manufacturing, IEEE Transactions on, vol. 30, pp. 11-22, 2007. [64] K. N.Tu, 'Interdiffusion and reaction in bimetallic Cu-Sn thin films,' Acta Metallurgica, vol. 21, pp. 347-354, 1973. [65] G. T. T. Sheng, C. Hu, W. Choi, K. Tu, Y. Bong, and L. Nguyen, 'Tin whiskers studied by focused ion beam imaging and transmission electron microscopy,' Journal of applied physics, vol. 92, p. 64, 2002. [66] K.N. Tu, 'Irreversible processes of spontaneous whisker growth in bimetallic Cu-Sn thin-film reactions,' Physical review B, vol. 49, p. 2030, 1994. [67] M. Dudek and N. Chawla, 'Mechanisms for Sn whisker growth in rare earth-containing Pb-free solders,' Acta Materialia, vol. 57, pp. 4588-4599, 2009. [68] C. Herring and J. K. Galt, 'Elastic and Plastic Properties of Very Small Metal Specimens,' Physical Review, vol. 85, pp. 1060-1061, 1952. [69] A. P. Levitt, Whisker technology: John Wiley & Sons, 1970. [70] G. Sines, 'Filamentary Crystals grown from the Solid Metal,' Journal of the Physical Society op Japan, vol. 15, 1960. [71] E. Schmid and W. Boas, Plasticity of crystals with special reference to metals: FA Hughes, 1950. [72] E. Schmid, W. Boas, and F. Rawlins, 'Kristallplastizitaet,' The Journal of Physical Chemistry, vol. 39, pp. 1248-1248, 1935. [73] R. Doremus, Growth and perfection of crystals: proceedings: Wiley, 1958. [74] N. F. URUTA, 'Growth Mechanism of Proper Tin—Whisker' 1969. [75] K. Chen and G. D. Wilcox, 'Observations of the spontaneous growth of tin whiskers on tin-manganese alloy electrodeposits,' Physical review letters, vol. 94, p. 66104, 2005. [76] C. Liu, C. Chen, and K.N. Tu, 'Electromigration in Sn–Pb solder strips as a function of alloy composition,' Journal of applied physics, vol. 88, p. 5703, 2000. [77] M. Dudek, R. Sidhu, and N. Chawla, 'Novel rare-earth-containing lead-free solders with enhanced ductility,' JOM Journal of the Minerals, Metals and Materials Society, vol. 58, pp. 57-62, 2006. [78] T. H. Chuang and C. C. Jain, 'Morphology of the Tin Whiskers on the Surface of a Sn-3Ag-0.5 Cu-0.5 Nd Alloy,' Metallurgical and Materials Transactions A, vol. 42, pp. 684-691, 2011. [79] T.H. Chuang, H.J. Lin, and C.C. Chi, 'Rapid growth of tin whiskers on the surface of Sn–6.6 Lu alloy,' Scripta materialia, vol. 56, pp. 45-48, 2007. [80] T. H. Chuang, 'Rapid whisker growth on the surface of Sn–3Ag–0.5 Cu–1.0 Ce solder joints,' Scripta materialia, vol. 55, pp. 983-986, 2006. [81] T. H. Chuang and S. F. Yen, 'Abnormal growth of tin whiskers in a Sn3Ag0.5 Cu0. 5Ce solder ball grid array package,' Journal of electronic materials, vol. 35, pp. 1621-1627, 2006. [82] T.H. Chuang, C.C. Chi, and H.J. Lin, 'Formation of whiskers and hillocks on the surface of Sn-6.6 RE alloys,' Metallurgical and Materials Transactions A, vol. 39, pp. 604-612, 2008. [83] A. Mayadas and M. Shatzkes, 'Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces,' Physical review B, vol. 1, p. 1382, 1970. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16269 | - |
dc.description.abstract | 近年來為了滿足人類在生活上的各式需求,電子產品的功能日益複雜化,使得半導體的製程技術不斷地精進,電晶體的尺寸也因此不斷的縮小。隨著電晶體的尺寸不斷的縮小,微影技術的發展將趨於困難,此外,量子效應也會越趨顯著。有鑑於此,透過3D-IC 技術晶片的堆疊,讓不同功能的積體電路整合在一起,是一個大有可為且前瞻性的方法。然而,3D-IC 技術的可靠度問題是值得關心與評估的。
本研究即是針對3D-IC 技術晶片的堆疊接合介面的研究,來提供3D-IC 技術在可靠度上面的參考。本研究分為兩部份:第一部份為利用固液擴散接合的方法來針對晶片堆疊接合界面所產生的孔洞,利用銀的介金屬來填補另一介金屬所產生的孔洞,使得可靠度大幅度的提升。第二部份為利用銦做為矽晶片堆疊的中間層,使得極低溫接合成為可能。 本研究的第一部分結果顯示利用銀的介金屬化合物,可有效的填補其他金屬的介金屬化合物因其扇貝狀的結構所導致的孔洞,使得接點強度大幅度的上升。本研究的第二部份結果顯示利用銦做為矽晶片堆疊的中間層,雖然可在極低的溫度完成矽晶片的堆疊,但其所引發的銦鬚問題卻會產生矽晶片中的電路短路,其生長的速率隨著溫度升高而變快,生長的長度、寬度和數目隨著時間而變長、變寬和變多。 | zh_TW |
dc.description.abstract | In order to fulfill every demand in life for human beings in these years, the functions of electronic products have been complicated day by day such that the manufacture technology of semiconductor is improved at every moment and the size of transistor is become smaller and smaller. Owing to transistor is smaller and smaller, developing photolithography technology has become more difficult ever since. In addition, quantum phenomenon is conspicuous when the size of transistor is small enough. Due to these several reasons, 3D-IC technology for chip stacking to integrate chips with different function is promising and foresighted way to overcome these difficulties as mentioned above.
This research is primarily focus upon the bonding interfaces of chip stacking in 3D-IC technology to provide better performance in reliability issues. This research is divided into two parts. The first part is to use silver-contained intermetallic compounds to eliminate voids via solid-liquid interdiffusion bonding technique for chips stacking and hence the reliability is improved drastically. The second part is to use indium as interlayer for silicon chip stacking such that extremely low temperature bonding turns into possibility. The results of this research in first part indicated that the use of silver-contained intermetallic compounds is an effective way to fill up the voids which are created due to scallop shape of other metal-contained intermetallic compounds. Thus, the strength of the bonding is increased dramatically. The results of this research in second part indicated that the silicon chips can be bonded by using indium as interlayer at extremely low temperature. It will induce indium whisker to short circuits in silicon chip, however. Also, the growth velocity of indium whisker is faster, longer, wider and the number of indium whisker is increased as the working temperature of silicon chip is increased. | en |
dc.description.provenance | Made available in DSpace on 2021-06-07T18:07:30Z (GMT). No. of bitstreams: 1 ntu-101-R99527061-1.pdf: 5529865 bytes, checksum: a132faf011fa3a835f106791c0228ec7 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 口試委員審定書 I
致謝……… II 摘要……… III Abstract….. IV 目錄……… VI 圖目錄…… IX 表目錄…… XIII 第一章 3D-IC簡介 1 1.1. 研究動機 1 1.2. 半導體製程技術介紹 5 1.2.1. 晶片製造技術介紹 5 1.2.2. 3D-IC 封裝技術介紹 15 第二章 利用固液擴散接合使得銀的介金屬化合物填補Ni-Sn和Ni-In系統中扇貝狀介金屬化合物所造成的界面孔洞 19 2.1. 文獻回顧 19 2.1.1. 固液擴散接合簡介 19 2.1.2. 介金屬性質文獻探討 24 2.1.3. 界面反應文獻探討 29 2.1.4. 接點性質文獻探討 34 2.1.5. 製程文獻探討 37 2.2. 實驗方法 38 2.2.1. Si/Ni/Sn Sn/Ni/Si固液擴散接合 44 2.2.2. Si/Ni/Ag Sn/Ni/Si 固液擴散接合(單邊結構) 46 2.2.3. Si/Ni/Sn/Ag Sn/Ni/Si 固液擴散接合(對稱結構) 48 2.2.4. Si/Ni/In In/Ni/Si 固液擴散接合 51 2.2.5. Si/Ni/In/Ag In/Ni/Si 固液擴散接合(對稱結構) 53 2.3. 實驗結果與討論 55 2.3.1. Si/Ni/Sn Sn/Ni/Si固液擴散接合 55 2.3.2. Si/Ni/Ag Sn/Ni/Si 固液擴散接合(單邊結構) 57 2.3.3. Si/Ni/Sn/Ag Sn/Ni/Si 固液擴散接合(對稱結構) 59 2.3.4. Si/Ni/In In/Ni/Si 固液擴散接合 63 2.3.5. Si/Ni/In/Ag In/Ni/Si 固液擴散接合(對稱結構) 65 2.3.6. Si/Ni/Sn Sn/Ni/Si 和 Si/Ni/Sn/Ag(薄層) Sn/Ni/Si 接點強度比較...68 67 第三章 70 利用銦做為矽晶片堆疊的中間層其所引發的銦鬚行為探討 70 3.1. 文獻回顧 70 3.1.1. 銦焊接材料文獻回顧 70 3.1.2. 錫鬚文獻回顧 72 3.1.3. 添加稀土元素對焊錫性質的影響 76 3.2. 實驗方法 78 3.2.1. 矽晶片堆疊接合後放置室溫經過7天,銦鬚的行為探討 78 3.2.2. 矽晶片堆疊接合後放置室溫,50oC,75oC,100oC時間3小時、16小時、48小時,銦鬚的行為探討 81 3.3. 實驗結果與討論 84 3.3.1. 矽晶片堆疊接合後放置室溫經過7天,銦鬚的行為探討 84 3.3.2. 矽晶片堆疊接合後放置室溫3小時、16小時、48小時,銦鬚的行為探討............ 87 3.3.3. 銦凸塊銦鬚行為觀察 93 第四章 總結 95 第五章 參考文獻 96 | |
dc.language.iso | zh-TW | |
dc.title | 3D-IC 封裝鎳/銦及鎳/錫凸塊接合界面研究 | zh_TW |
dc.title | Study on the Bonding Interfaces of Ni/In and Ni/Sn Bumps in 3D-IC Packages | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林招松(Chao-Sung Lin),王彰盟(Jim Wang),張道智(Tao-Chih Chang) | |
dc.subject.keyword | 固液擴散接合,三維積體電路封裝, | zh_TW |
dc.subject.keyword | solid-liquid interdiffusion bonding,3D-IC packages, | en |
dc.relation.page | 101 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2012-07-23 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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