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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 劉致為(Chee Wee Liu) | |
| dc.contributor.author | Meng-Han Tsai | en |
| dc.contributor.author | 蔡孟翰 | zh_TW |
| dc.date.accessioned | 2021-06-07T18:02:29Z | - |
| dc.date.copyright | 2012-08-10 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-03 | |
| dc.identifier.citation | Chapter1
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Brende, “19.4%-EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS”, 26th European Photovoltaic Solar Energy Conference and Exhibition [7] Jiun-Hong Lai, Ajay Upadhyaya, Rishi Ramanathan, Arnab Das, Keith Tate, Vijaykumar Upadhyaya, Aditya Kapoor, Chai-Wei Chen, Ajeet Rohatgi, “LARGE AREA 19.6% EFFICIENT REAR PASSIVATED SILICON SOLRAR CELLS WITH LOCAL AL BSF AND SCREEN-PRINTED CONTACTS”, 37th PVSC 2011, 001929 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16139 | - |
| dc.description.abstract | 由於矽晶太陽能電池的穩定性以及高轉換效率，使矽晶太陽能電池在太陽能產業上佔了極大部分，雖然此技術在量產上的結構已經發展的很完整，但是在高轉換效率的技術上能存在許多的挑戰。
本論文中，N型單晶矽基板太陽能電池的製程是利用離子佈值技術來製作射極(硼)以及背面電場(磷)。利用合適的退火條件，可以活化離子佈值中摻雜離子並且修復離子佈植所造成的損傷。本論文的研究以爐管退火為主。除此之外，因為表面鈍化對太陽能電池的開路電壓有很大的影響，為了提高太陽能電池的轉換效率，表面鈍化是個很重要的因素。因此本論文首先對表面鈍化的機制與特色做分析，並且運用不同材料設計表面鈍化層，進而利用準穩態光導量測法分析不同鈍化層的鈍化品質。在本論文分析的材料中，以氮化矽搭配氧化鋁(SiNx/Al2O3)製成的的雙層結構可以提供最佳的鈍化品質。藉由此雙層結構出色的鈍化能力，本論文中最高的效率可超過18% | zh_TW |
| dc.description.abstract | Wafer based solar cell accounts for the production of a large part in photovoltaic industry due to its stability and high efficiency. Although the technology of wafer based solar cell has been well-developed for conventional structure, there are still numerous new challenges existing for the high efficiency solar cell.
In this thesis, the fabrication process of n-type crystalline silicon solar cell is demonstrated by using ion implantation to form the boron (p+) emitter and phosphorous (n+) back surface field. By means of appropriate annealing, the implanted dopants could be activated, and the damage caused by the implantation can be repaired. Moreover, surface passivation plays an important role in promoting the efficiency of cells due to its strong dependence of open circuit voltage (Voc). Therefore, the mechanism and characteristic of surface passivation were introduced in this work. Then, different passivation layers were designed and analyzed by quasi-steady-state photoconductance and photoluminescence (QSSPC) measurement. In this work, the SiNx/Al2O3 stack layers could provide the best passivation quality. And with the excellent passivation of SiNx/Al2O3 stack layers, efficiency more than 18% is shown in this work. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T18:02:29Z (GMT). No. of bitstreams: 1 ntu-101-R99943061-1.pdf: 2272134 bytes, checksum: 308f8e477ea90eda74d1d54d1b6b5f50 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 致謝 I
摘要 III Abstract IV Contents V List of Figures VI List of Tables VIII .Chapter 1 Introduction 1 .1.1 Background and Motivation 1 .1.2 Organization 3 .Chapter 2 Fabrication of n-type crystalline Si solar cell with PECVD SiNx passivation 6 .2.1 Introduction 6 .2.2 Silicon nitride deposited by means of PECVD 8 .2.3 Optimization of PECVD deposition parameter for surface passivation 10 .2.4 The optical properties of SiNx films and the fabrication of n-type crystalline solar cell with SiNx passivation 23 .2.5 The fabrication of n-type crystalline silicon solar cell with SiO2/SiNx passivation 33 .2.6 Summary 39 .Chapter 3 Titanium Dioxide passivation layer and optimization of n-type crystalline solar cell 43 .3.1 Introduction 43 .3.2 Investigation of various surface passivation schemes and Formation 44 .3.3 The optimization of n-type crystalline solar cells 58 .3.4 Summary 64 .Chapter 4 SiNx/Al2O3 passivation stack layers and the fabrication of n-type crystalline Si solar cells with front and rear passivation 66 .4.1 Introduction 66 .4.2 Fabrication of n-type crystalline Si solar cell with Al2O3 passivation 67 .4.3 Fabrication of n-type crystalline silicon solar cell with Al2O3 passivation and rear passivation 77 .4.4 Summary 86 .Chapter 5 Summary and Future Work 88 .5.1 Summary 88 .5.2 Future works 89 | |
| dc.language.iso | zh-TW | |
| dc.subject | n型矽基 | zh_TW |
| dc.subject | 鈍化 | zh_TW |
| dc.subject | 氮化矽 | zh_TW |
| dc.subject | 電漿加強化學氣相沉積 | zh_TW |
| dc.subject | passivation | en |
| dc.subject | n-type silicon based | en |
| dc.subject | PECVD | en |
| dc.subject | silicon nitride | en |
| dc.title | 表面鈍化層之分析與應用於N型矽基板太陽能電池 | zh_TW |
| dc.title | Surface Passivation on N-type Silicon Solar Cells | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林中一(Chung-Yi Lin),林楚軒(Chu-Hsuan Lin),郭宇軒(Yu-Hsuan Kuo) | |
| dc.subject.keyword | n型矽基,鈍化,氮化矽,電漿加強化學氣相沉積, | zh_TW |
| dc.subject.keyword | n-type silicon based,passivation,silicon nitride,PECVD, | en |
| dc.relation.page | 89 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2012-08-03 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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