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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 劉致為(Chee-Wee Liu) | |
| dc.contributor.author | Tzu-Yu Chang | en |
| dc.contributor.author | 張子佑 | zh_TW |
| dc.date.accessioned | 2021-06-07T18:01:29Z | - |
| dc.date.copyright | 2012-08-15 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-04 | |
| dc.identifier.citation | [1] Soline Richard, Frederic Aniel, and Guy Fishman, ' Energy-band structure of Ge, Si, and GaAs: A thirty-band k p method, ' Physical Review B, 70, 235204, 2004
[2] W. C. Dash, and R. Newman, ' Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77 K and 300 K, ' Physical Review, 99, 1151, 1955 [3] G. G. Macfarlane, and V. Roberts, ' Infrared Absorption of Germanium near the Lattice Edge, ' Physical Review, 97, 1714, 1955 [4] S. C. Jain, and D. J. Roulston, ' A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1-x strained layers, ' Solid-State Electronics, 34, 453, 1991 [5] L. Vina and M. Cardona, ' Optical properties of pure and ultraheavily doped germanium: Theory and experiment, ' Physical Review B, 34, 2586, 1986 [6] Paul W. Loscutoff, and Stacey F. Bent, ' Reactivity of the germanium surface: chemical passivation and functionalization, ' Annual Review of Physical Chemistry, 57, 467, 2006 [7] Hsin-Chiao Luan, Desmond R. Lim, Kevin K. Lee, Kevin M. Chen, Jessica G. Sandland, Kazumi Wada, and Lionel C. Kimerling, ' High-quality Ge epilayers on Si with low threading-dislocation densities, ' Applied Physics Letters, 75, 2909, 1999 [8] Yuji Yamamoto, Peter Zaumseil, Tzanimir Arguirov, Martin Kittler, Bernd Tillack, ' Low treading dislocation density Ge deposited on Si (100) using RPCVD, ' Solid-State Electronics, 60, 2, 2011 [9] V. Terzieva, L. Souriau, M. Caymax, D. P. Brunco, A. Moussa, S. Van Elshocht, R. Loo, F. Clemente, A Satta, and Marc Meuris, ' Benefits and side effects on high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates, ' Thin Solid Films, 517, 172, 2008 [10] C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, ' Comprehensive study of the Raman shifts of strained silicon and germanium , ' Journal of Applied Physics, 105, 083537, 2009 [11] T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, ' Strained-enhanced photoluminescence from Ge direct transition, ' Applied Physics Letters, 96, 211108, 2010 [12] C.W. Liu, T.-H. Cheng, Y.-Y. Chen, S.-R. Jan, C.-Y. Chen, S.T. Chan, Y,-H. Nien, Y. Yamamoto, B. Tillack, ' Direct and indirect radiative recombination from Ge,' Thin Solid Films, 520, 3249,2012 [13] M. H. Liao, T. H. Cheng, and C. W. Liu, ' Infrared emission from Ge metal-insulator-semiconductor tunneling diodes, ' Applied Physics Letters, 89, 261913, 2006 [14] Szu-Lin Cheng, Gary Shambat, Jesse Liu, Hyun-Yong Yu, Krishna Saraswat, Theodore I. Kamins, Jelena Vuckovic, and Yoshio Nishi, ' Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon, ' Applied Physics Letters, 98, 211101, 2011 [15] Jifeng Liu, Xiaochen Sun, Rodolfo Camacho-Aguilera, Lionel C. Kimerling, and Jurden Michel, ' Ge-on-Si laser operating at room temperature, ' Optics Letters, 35, 679, 2010 [16] Rodolfo E. Camacho-Aguilera, Yan Cai, Neil Patel, Jonathan T. Bessette, Marco Romagnoli, Lionel C. Kimerling, and Jurden Michel, ' An electrically pumped germanium laser, ' Optics Express, 20, 11316, 2012 [17] Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel, ' Direct gap photoluminescence of n-type tensile-strained Ge-on-Si, ' Applied Physics Letters, 95, 011911, 2009 [18] M. El Kurdi, T. Kociniewski, T. P. Ngo, J. Boulmer, D. Debarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, ' Enhanced photoluminescence of heavily n-doped germanium, ' Applied Physics Letters, 94, 191107, 2009 [19] Szu-Lin Cheng, Jesse Lu, Gary Shambat, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, and Yoshio Nishi, ' Room temperature 1.6 um electroluminescence from Ge light emitting diode on Si substrate, ' Optics Express, 17, 10019, 2009 [20] Shiyu Sun, Yun Sun, Zhi Liu, Dong-Ick Lee, Samuel Peterson, and Piero Pianetta, ' Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions, ' Applied Physics Letters, 88, 021903, 2006 [21] Ernest W. Valyocsik, ' Germanium oxidation in nitric acid, ' Journal of the Electrochemical Society, 114, 176, 1967 [22] I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, ' 30% external quantum efficiency from surface textured, thin film light-emitting diodes, ' Applied Physics Letters, 63, 2174, 1993 [23] Reiner Windisch, Barun Dutta, Maarten Kuijk, Alexander Knobloch, Stefan Meinlschmidt, Stefan Schoberth, Peter Kiesel, Gustaaf Borghs, Gottfried H. Dohler, and Paul Heremans, ' 40% Efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography, ' IEEE Transactions on Electron Devices, 47, 1492, 2000 [24] James W. Fleming, ' Dispersion in GeO2-SiO2 glasses,' Applied Optics, 23, 4486, 1984 [25] S. R. Jan, C. Y. Chen, C. H. Lee, S. T. Chan, K. L. Peng, C. W. Liu, Y. Yamamoto, and B. Tillack, ' Influence of defects and interface on radiative transition of Ge, ' Applied Physics Letters, 98, 141105, 2011 [26] Y. P. Varshni, ' Temperature dependence of the energy gap in semiconductors, ' Physica, 34, 149, 1967 [27] C. W. Liu, M. H. Lee, Miin-Jang Chen, I. C. Lin, and Ching-Fuh Lin, ' Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes, ' Applied Physics Letters, 76, 1516, 2000 [28] C.W. Liu, M. H. Lee, Miin-Jang Chen, Ching-Fuh Lin, and M. Y. Chern, ' Roughness-Enhanced Electroluminescence from Metal Oxide Silicon Tunneling Diodes, ' IEEE Electron Device Letters, 21, 601, 2000 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16113 | - |
| dc.description.abstract | 本論文探討硝酸與鍺反應後，使得光激發光顯著增強的機制。
在本文中，我們針對可能增強放光的機制做了研究，並提出三種可能的機制：表面反射減少使得吸光增加、表面鈍化以及因表面結構的生成使得出光效率增加等。經由能量散射光譜儀分析的結果，表面結構裡的元素組成為鍺和氧，其比例約為一比二。與文獻資料相比，我們認為表面的結構應由二氧化鍺所組成。 由於在矽晶圓上以磊晶成長的鍺的光激發光非常微弱，我們也利用泡硝酸的方式使得表面成長結構，實驗的結果顯示樣本經由硝酸處理後，光激發光也有明顯的增強。 在本文的第三章，我們把硝酸應用在金屬-絕緣體-半導體的發光二極體上，發現經由表面的粗化，使得出光效率增加，電激發光也有顯著的增強。 | zh_TW |
| dc.description.abstract | We have demonstrated that the intensity of the photoluminescence from germanium can be enhanced by more than 10 times after HNO3 treatment. The mechanisms for the enhancement include lower reflectance of the surface, surface passivation and the formation of the surface structure that reduces the effect of the total internal reflection.
The elemental composition determined by the EDX shows that ratio of the germanium and oxygen is 1:2 for the surface structure grown on the germanium substrate after HNO3 treatment. Compared to the literature, it is supposed that the structure is composed of GeO2. The technique of the HNO3 treatment on the germanium substrates is also applied on the epitaxial Ge-on-Si substrate and the metal-insulator-semiconductor light-emitting diodes. The results show that the luminescence can be enhanced as well. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T18:01:29Z (GMT). No. of bitstreams: 1 ntu-101-R99943074-1.pdf: 3839574 bytes, checksum: 5859b3a29876d8cdec8f65f965e89a99 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vi LIST OF TABLES viii Chapter 1 Introduction 1 1.1 Introduction 1 Chapter 2 Enhancement of Photoluminescence from Germanium by Nitric Acid 4 2.1 Introduction 4 2.2 Experiment on Bulk Germanium 5 2.2.1 Surface treatment 5 2.2.2 HNO3 Treatment on the Germanium Substrate 8 2.2.3 Samples with Different Immersing Time in HNO3 11 2.2.4 Surface Study using Scanning Electron Microscope (SEM) 12 2.2.5 Study of the Formation of the Micro-hemispheres 15 2.3 Experiment on Epitaxial Germanium on Silicon 17 2.3.1 The Sample of Epitaxial Germanium on Silicon 17 2.3.2 The Reabsorption Effect of Germanium 18 2.3.3 PL Spectra of Epitaxial Ge-on-Si After HNO3 Treatment 20 2.4 Summary 24 Chapter 3 Simulation of the Enhancement of Light Emission from Germanium After HNO3 Treatment 26 3.1 Introduction 26 3.2 Simulation of the Enhancement of the PL Intensity for Bulk Germanium 26 3.2.1 The Reduction of Total Internal Reflection by Surface Structure on Ge After HNO3 Treatment 26 3.2.2 The Change of the Shape of the PL spectra After HNO3 Treatment 28 3.2.3 The Relation of SRV and the Ratio of Luminescence from Direct and Indirect Transition 29 3.2.4 Model for the PL Enhancement After HNO3 Treatment 33 3.3 Summary 41 Chapter 4 Enhancement of the Light Output from Metal-Insulator-Semiconductor LEDs 43 4.1 Introduction 43 4.2 Device Fabrication 43 4.3 I-V curve and Electroluminescence from MIS LEDs 45 4.3.1 I-V curves of MIS LEDs 45 4.3.2 Electroluminescence from MIS LEDs 47 4.3.3 Enhanced EL Intensity from MIS LED After HNO3 Treatment 48 4.4 Summary 51 Chapter 5 Summary and Future Work 52 5.1 Summary 52 5.2 Future Work 53 REFERENCE 54 | |
| dc.language.iso | en | |
| dc.subject | 金屬-絕緣體-半導體的發光二極體 | zh_TW |
| dc.subject | 硝酸處理 | zh_TW |
| dc.subject | 增強放光 | zh_TW |
| dc.subject | Ge-based MIS LEDs | en |
| dc.subject | HNO3 treatment | en |
| dc.subject | enhancement of PL intensity | en |
| dc.title | 硝酸應用於鍺放光增強機制之研究 | zh_TW |
| dc.title | Study of the Enhancement of Light Emission from Germanium by Nitric Acid | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林中一(Chung-Yi Lin),郭宇軒(Yu-Hsuan Kuo),林楚軒(Chu-Hsuan Lin) | |
| dc.subject.keyword | 硝酸處理,增強放光,金屬-絕緣體-半導體的發光二極體, | zh_TW |
| dc.subject.keyword | HNO3 treatment,enhancement of PL intensity,Ge-based MIS LEDs, | en |
| dc.relation.page | 58 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2012-08-06 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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