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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 呂宗昕 | |
dc.contributor.author | Fu-Shan Chen | en |
dc.contributor.author | 陳富珊 | zh_TW |
dc.date.accessioned | 2021-06-07T17:50:54Z | - |
dc.date.copyright | 2012-11-12 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-11-05 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/15730 | - |
dc.description.abstract | 為了降低電池元件生產成本,使用非真空製程製備太陽電池已成為近年來熱門的研發方向。因此,本研究將以非真空塗佈法製備Cu(In,Ga)Se2光吸收層薄膜。論文中改變前驅溶液之配方,製備含奈米粉體之前驅溶液、含硒離子之前驅溶液以及含鉍離子之前驅溶液,亦利用晶種層進行Cu(In,Ga)Se2薄膜特性之改善。
論文首先選擇化學還原製程於常溫常壓下製備前驅奈米粉體,此技術不須再經過含有還原氣氛下壓燒即可得到具晶相之合金粉體,並將奈米粉體塗佈前驅薄膜搭配硒化法製備緻密之Cu(In,Ga)Se2光吸收層薄膜,文中探討其生成機制,透過奈米粉體之使用有效降低Cu(In,Ga)Se2合成溫度至450度。另外藉由化學還原法亦可直接進行銅銦鎵硒奈米粉體之製備,此技術不須再經過含有硒蒸氣氣氛下壓燒即可得到銅銦鎵硒化合物。再將硒化物粉體經塗佈和煆燒即可得到大粒徑且緻密性良好之Cu(In,Ga)Se2光吸收層薄膜。 為了增加薄膜均勻性,第二部份使用溶液法製作前驅薄膜,並選用亞硒酸做為硒源,藉由亞硒酸之使用,達成硒源與其他元素均勻混合之目的。文中探討以亞硒酸作為硒源合成Cu(In,Ga)Se2光吸收層薄膜之生長機制。另一方面,文中亦針對不同硒源添加方式對Cu(In,Ga)Se2光吸收層薄膜合成之影響進行研究。研究顯示直接使用硒溶液容易生成過厚之硒化鉬,將抑制Cu(In,Ga)Se2相生成和晶粒之生長,導致電池元件特性的下降。使用硒蒸氣作為硒源可以避免過厚之硒化鉬生成且製備出特性良好之Cu(In,Ga)Se2光吸收層薄膜。因此利用硒蒸氣作為硒源可大幅提升Cu(In,Ga)Se2電池元件效率。 為了提升Cu(In,Ga)Se2薄膜之電性,第三部份添加五族元素離子進行Cu(In,Ga)Se2光吸收層薄膜之改質,Cu(In,Ga)Se2合成溫度會由500oC降至450oC, 且隨著五族元素離子濃度的增加,薄膜粒徑亦隨之增加,此乃由於其中間產物具有助熔效應所致。低溫光激發光光譜儀量測顯示一發光峰值,為施子能階與授子能階躍遷所造成,添加五族元素離子會造成施子缺陷量減少,使光激發光發光強度下降,而薄膜載子濃度增加。因此可透過適當Bi3+的添加, Cu(In,Ga)Se2光吸收層薄膜之電性由4.37%提升至6.29%。 為進一步提升Cu(In,Ga)Se2薄膜之電性,論文第四部份選擇In2Se3作為晶種層製備Cu(In,Ga)Se2光吸收層薄膜。In2Se3層具有(006)及(300)之晶面,研究發現隨不同晶面In2Se3層之使用,光吸收層薄膜其(112)晶面對(204/220)晶面之X光繞射相對強度亦隨之改變。可藉由具(006)晶面之晶種層來達成具(112)晶面之Cu(In,Ga)Se2光吸收層薄膜之生長;另外藉由具(300)晶面之晶種層來達成具(204/220)晶面之Cu(In,Ga)Se2光吸收層薄膜之生長。當使用具(112)晶面之Cu(In,Ga)Se2光吸收層薄膜,其電池元件擁有7.00%之轉化效率。 本論文針對不同前驅溶液製備之Cu(In,Ga)Se2薄膜進行結構及電性特性分析,利用前驅溶液所添加成分之改變,改善薄膜型態,提升薄膜結晶性,以及增加薄膜之載子濃度,有效提升電池元件效率,增加Cu(In,Ga)Se2光吸收層薄膜在太陽電池市場之發展潛力。 | zh_TW |
dc.description.abstract | In this work, metal compounds, selenide compounds, selenium-containing solutions, and the bismuth-containing solutions were applied as the precursor pastes to promote the grain growth and improve the electrical properties of the films. The photovoltaic characteristics of the fabricated solar cells were investigated.
Cu(In,Ga)Se2 films were successfully prepared from the nanoparticles that were synthesized via the chemical reduction reaction using ethylene glycol as the solvent and NaBH4 as a reducing agent in an ambient atmosphere. The route developed not only reduced the synthesis temperature of the chalcopyrite compounds to 450oC, but also controlled the phases of the formed products. This developed process was also applied for preparing selenide compounds. The presence of selenide species in the precursors enlarged the grains upon heating, and densified the prepared films. In the second section, H2SeO3 was used as an Se source in the starting solution, leading to an improvement in homogeneous mixing in the precursor pastes. H2SeO3 is first decomposed to yield selenium species at elevated temperatures. Subsequently, In2Se3 is formed from selenium and indium species. Finally, In2Se3 reacts with other species to yield Cu(In,Ga)Se2. Furthermore, various routes to incorporate selenium ions were examined. The formation of thick MoSe2 films tended to retard the formation of Cu(In,Ga)Se2 and decrease the grain size of the prepared films. The selenium ion-containing solutions coated on the top layer of Cu(In,Ga)Se2 precursor films would be easily evaporated during the heating process, therefore causing a decrease in the thickness and the porous microstructures of the films. In the third section, the influence of doping with group V ions in the properties of synthesized Cu(In,Ga)Se2 films was investigated. The incorporation of group V ions in Cu(In,Ga)Se2 significantly increased the size of the grains in the obtained films, and decreased the film roughness. The intermediate compound was thought to react with selenium vapor to form selenide compounds, which acted as a flux agent at elevated temperatures. The low-temperature photoluminescence spectra of group V -containing Cu(In,Ga)Se2 films revealed attenuated intensity of the peak that was attributed to the donor-acceptor pair transition following the incorporation of group V ions. The efficiency of solar cells increased from 4.37% to 6.29% as group V-ion doping amount was increased from 0 to1.0 mol%. In the fourth section, In2Se3 films were applied as the seeding layer for synthesizing Cu(In,Ga)Se2 films. Due to the crystalline symmetry, the preferred (112)-oriented Cu(In,Ga)Se2 film was produced using the preferred (006)-oriented In2Se3 seeding layers. On the contrary, the (220/204)-oriented Cu(In,Ga)Se2 films were yielded employing the (300)-oriented In2Se3 seeding layers. Using the (112)-oriented Cu(In,Ga)Se2 films resulted in increasing the conversion efficiency of the device to 7.0%. Well controlling the precursors used in the pastes not only increased the characteristics of the films but also improved the conversion efficiencies of the solar devices. | en |
dc.description.provenance | Made available in DSpace on 2021-06-07T17:50:54Z (GMT). No. of bitstreams: 1 ntu-101-F96524081-1.pdf: 9679929 bytes, checksum: 3f1e9766670151eb1c3718434259089d (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | Chapter 1 Introduction and background
1.1 Preface 1 1.2 Solar Cells 2 1.2.1 Typical Solar Cell Structures 2 1.2.1.1 p-n homojunction cells 3 1.2.1.2 p-i-n homojunction cells 5 1.2.1.3 Heterojunction Cells 5 1.2.2 I-V Characteristics of Solar Cells 6 1.2.3 Absorber materials 8 1.3 Cu(In,Ga)Se2 Solar Cells 9 1.3.1 Material properties 10 1.3.2 Deposition methods 11 1.3.2.1 Co-evaporation process 11 1.3.2.2 Two-step process 12 1.3.2.3 Other deposition process 13 1.3.3 Device preparation and operation 14 1.4 Market perspectives……………………………………………….......16 1.5 Introduction of synthesis techniques 16 1.5.1 Chemical reduction method 16 1.5.2 Doctor blading method 17 1.5.3 Spin coating method 18 1.6 Research objective 18 Chapter 2 Experimental 2.1 Preparation of Cu(In,Ga)Se2 absorber materials………………………..43 2.1.1 Chemical reduction method to prepare the alloy precursor..........43 2.1.2 Chemical reduction method to prepare the selenium-containing precursors............................................................................................44 2.1.3 Doctor blading process......................................................................44 2.1.4 Spin coating method..........................................................................45 2.2 Measurement and characterization............................................................46 2.3 Cell fabrication and characterization………………………………….…47 Chapter 3 Chemical reduction-derived Cu(In,Ga)Se2 films: Phase characterization and formation mechanism 3.1 Introduction 50 3.2 Results and Discussion ..52 3.2.1 Effects of reduction conditions on the formation of obtained nanoparticles ….…………...………………………………………52 3.2.2 Effects of selenization temperatures on the characteristics of CuInSe2 films from the Cu-In alloy particles……………………55 3.2.3 Preparation of Cu(In,Ga)Se2 films from the reduced particles that contain gallium species …………………………………..………..58 3.2.4 Effects of selenization temperatures on the characteristics of Cu(In,Ga)Se2 films employing the selenium-containing particles…………………………………………………………….60 3.3 Conclusions 64 Chapter 4 Incorporation of selenium species into solution-based Cu(In,Ga)Se2 films: Phase characterization and the formation mechanism 4.1 Introduction 83 4.2 Results and Discussion 84 4.2.1 Phase characteristics and microstructures of CuInSe2 films…....84 4.2.2 Phase characteristics and microstructures of Cu(In,Ga)Se2 films………………………………………………………………...87 4.2.3 Rieltveld refinement and Raman spectra of Cu(In,Ga)Se2 films..89 4.2.4 Phase characteristics and microstructures of Cu(In,Ga)Se2 films…………..…………………………………………………….91 4.2.5 In-depth characteristic of Cu(In,Ga)Se2 films……………………92 4.2.6 Photovoltaic properties of Cu(In,Ga)Se2 films…………………...94 4.3 Conclusions 96 Chapter 5 Optimization of solution-processed Cu(In,Ga)Se2 films through doping 5.1 Introduction 115 5.2 Results and discussion 117 5.2.1 Phase characteristics of Cu(In,Ga)Se2 films doped with bismuth ions...................................................................................................117 5.2.2 Microstructures of Cu(In,Ga)Se2 films doped with bismuth ions………………………………………………………………...118 5.2.3 Photoluminescence and electrical properties of Cu(In,Ga)Se2 films doped with bismuth ions……………………….………………...119 5.2.4 Photovoltaic properties of Cu(In,Ga)Se2 solar cells …………....121 5.2.5 Phase characteristics of Cu(In,Ga)Se2 films codoped with sodium and bismuth ions……..……………………………………….......122 5.2.6 Microstructures of Cu(In,Ga)Se2 films codoped with sodium and bismuth ions……………………………………………….……...123 5.2.7 Electrical properties of Cu(In,Ga)Se2 films codoped with sodium and bismuth ions………………………………..………………...124 5.3 Conclusions 128 Chapter 6 Influence of In2Se3 seeding layer in the characteristics of Cu(In,Ga)Se2 prepared via the solution-based synthesis 6.1 Introduction ....148 6.2 Results and discussion 149 6.2.1 Phase characteristics of In2Se3 seeding layers………………......149 6.2.2 Phase characteristics and microstructures of Cu(In,Ga)Se2 films using In2Se3 seeding layers……………….……………………...150 6.2.3 Electrical properties of Cu(In,Ga)Se2 films using In2Se3 seeding layers……………………………………………………………....152 6.2.4 Photovoltaic property of Cu(In,Ga)Se2 solar cells with the incorporation of bismuth ions and the use of In2Se3 seeding layers………………………………………………………………154 6.3 Conclusions 156 Chapter 7 Summary ……….….166 Reference................................................................................174 Publication List ………………………………184 List of Figures Figure 1.1 Schematic diagram of a simple convention solar cell…..……...20 Figure 1.2 Solar cell structures of (a) the p-n junction cell, (b) the p-i-n homojunction cell, (c) the heterojunction cell, (d) the Schottky-barrier-type cell, (e) the semiconductor-electrolyte cell, (f) the heterojunction cell without built-in electric filed, and (g) the dye-semiconductor cell (the case of Ru-based dye)………………………………………………………….….....21 Figure 1.3 Schematic diagram of a p-n junction solar cell…..………….....22 Figure 1.4 Equilibrium conditions in a p-n junction solar cell. (a) Energy bands, (b) electric field, and (c) charge density………………..23 Figure 1.5 Band diagram of a p-i-n solar cell……………………………....24 Figure 1.6 Band diagrams of the typical heterojunction solar cell consisting of a window layer of a wide-gap n-type semiconductor (A) and an absorber of a p-type semiconductor (B)…………………….25 Figure 1.7 Equivalent circuit of a solar cell in an ideal case (full lines) and with non-ideal components (dotted lines)……………………....26 Figure 1.8 I-V characteristics of an ideal solar cell in the dark and under illumination………………………………………………………27 Figure 1.9 Current-voltage characteristic of an ideal solar cell (a) and the power produced from the solar device (b)……………………...28 Figure 1.10 Effects of (a) the series resistance and (b) the shunt resistance on the I-V characteristics of a solar cell……………………...…29 Figure 1.11 Absorption coefficients for an amorphous silicon-hydrogen (a-Si:H), a nanocrystalline silicon (nC-Si), a poly(3-hexylthiophene): phenyl buckball butyric acid methyl ester mixture (P3HT: PCBM), CdTe, and copper indium gallium selenide (Cu(In,Ga)Se2) films…………………………...30 Figure 1.12 Dependence of the potential Jsc on the log of the thickness for the materials of Fig. 1.11. EQE=1 is assumed………………….31 Figure 1.13 Band gaps and lattice constants of the chalcopyrite…………32 Figure 1.14 Unit cell of the chalcopyrite structure………………………...33 Figure 1.15 Pseudo-binary phase diagram along the tie line between Cu2Se and In2Se3.......................................................................................34 Figure 1.16 Electronic levels of intrinsic defects in CuInSe2……………...35 Figure 1.17 Schematic view of the deposition of Cu(In,Ga)Se2 films via the co-evaporation process………………………………………......36 Figure 1.18 Schematic view of the deposition of Cu(In,Ga)Se2 films via the two-step process….………………………………………………37 Figure 1.19 Schematic view of a typical Cu(In,Ga)Se2 solar cell................38 Figure 1.20 Band diagram of a ZnO/CdS/Cu(In,Ga)Se2 structure.............39 Figure 1.21 Production and capacity of Cu(In,Ga)Se2 thin film solar cell (2006-2015)……………………………………………………….40 Figure 1.22 Schematic diagram of a doctor blading method (a) and the film thickness controlled by the gap between the substrate and the blade (b)…………………………………………………………..41 Figure 1.23 Main outline of the thesis………………………………………42 Figure 2.1 Scanning electron micrographs of (a) CdS films, (b) i-ZnO films, and (c) ITO films for the fabrication of the solar devices……..48 Figure 2.2 Schematic view of the fabricated Cu(In,Ga)Se2 solar cells…....49 Figure 3.1 X-ray diffraction patterns of Cu-In alloy powders via the chemical reduction reaction with the molar ratios of NaBH4 to metal ions (Cu+ and In3+ ions) equal to (a) 1: 1, (b) 5: 1, (c) 10: 1, and (d) 20: 1. The inset refers the plot of the ratios versus the XRD intensities of the resultants……………..……………....…67 Figure 3.2 X-ray diffraction patterns of Cu-In alloy powders via the chemical reduction reaction with the concentrations of metal ions equal to (a) 0.001 M, (b) 0.005 M, (c) 0.01 M, and (d) 0.015 M. The inset refers the plot of the concentrations versus the XRD intensities of the resultants………………………………..68 Figure 3.3 Transmission electron micrographs of Cu-In alloy powders via the chemical reduction reaction with the concentrations equal to (a) 0.001 M, and (b) 0.005 M, (c) 0.01 M, and (d) 0.015 M.…...69 Figure 3.4 X-ray diffraction patterns of the obtained CuInSe2 films selenized at (a) 300 oC, (b) 350 oC, (c) 400 oC, (d) 450 oC, (e) 500 oC, and (f) 550oC for 30 min……………………..……………....70 Figure 3.5 Raman spectra of the obtained CuInSe2 films selenized at (a) 300 oC, (b) 350 oC, (c) 400 oC, (d) 450 oC, (e) 500oC for 30 min. The inset refers the magnified view of the Raman spectra in the range of 200 to 400 cm-1…...……………………………………..71 Figure 3.6 Scanning electron micrographs of the obtained CuInSe2 films selenized at (a) 300 oC, (b) 350 oC, (c) 400 oC, (d) 450 oC, (e) 500 oC, and (f) 550oC for 30 min……………..………………………72 Figure 3.7 X-ray diffraction patterns of the obtained powders containing gallium via the chemical reduction reaction (a), and Cu(In,Ga)Se2 films selenized at 500oC for 30 min (b). The inset refers the (112) peak of CuInSe2 and Cu(In,Ga)Se2……….......73 Figure 3.8 Plot of the relation between selenization temperatures and the XRD intensities of the prepared Cu(In,Ga)Se2 films……….….74 Figure 3.9 Grazing incident X-ray diffraction patterns of the prepared Cu(In,Ga)Se2 films selenized at 450oC…………………...……..75 Figure 3.10 J-V curve of the prepared Cu(In,Ga)Se2 solar cells selenized at 450oC……………………………………………………………...76 Figure 3.11 X-ray diffraction patterns of (a) the obtained nanopowders via the chemical reduction and the obtained films heated at (b) 400oC, (c) 450oC, (d) 500oC, and (e) 550oC in a reducing atmosphere…………………………………………………...…...77 Figure 3.12 (a) Transmission electron micrograph of the nanopowders via the chemical reduction, scanning electron micrographs of the obtained films heated at (a) 400oC,(b) 450oC, (c) 500oC, and (d) 550oC in a reducing atmosphere………………………………...78 Figure 3.13 Atomic force micrographs for the obtained film after heating at (a) 400oC, (b) 450oC, (c) 500oC, and (d) 550oC in a reducing atmosphere………………………………………………………..79 Figure 3.14 Observed (×) and calculated (solid line) X-ray diffraction pattern of the 550oC-heated Cu(In,Ga)Se2 films. The inset refers coordination environment of the Se atoms in Cu(In,Ga)Se2…..80 Figure 3.15 Absorbance spectra of the prepared films heated at 500oC and 550oC. The inset plots Raman spectrum of the 550oC-heated Cu(In,Ga)Se2 films……………………………………………….81 Figure 3.16 Current-voltage characteristic of the fabricated Cu(In,Ga)Se2 solar cells heated at 550oC for 0.5 h in a reducing atmosphere..82 Figure 4.1 X-ray diffraction patterns of the prepared films employing H2SeO3 as an Se source after heating at (a) 250oC, (b) 350oC, (c) 450oC, and (d) 550oC......................................................................99 Figure 4.2 Scanning electron micrographs of the prepared films employing H2SeO3 as an Se source after heating at (a) 250oC, (b) 350oC, (c) 450oC, and (d) 550oC………………………………………100 Figure 4.3 X-ray diffraction patterns of the prepared films prepared with the molar ratios of the metal ions (Cu+ and In3+) to H2SeO3 at (a) 1:1, (b) 1:2, (c) 1:5, and the 550oC-heated films prepared with the molar ratios of the metal ions (Cu+ and In3+) to H2SeO3 at (d) 1:1, (e) 1:2, (f) 1:5……………………………………………..………101 Figure 4.4 X-ray diffraction patterns of Cu(In,Ga)Se2 films employing H2SeO3 as an Se source at heating rates of (a) 7 oC/min, (b) 4 oC/min, and (c) 1oC/min. The inset shows the relations between the diffraction peak intensity of the major peaks for Cu(In,Ga)Se2 and In2O3 phases....................................................102 Figure 4.5 Scanning electron micrographs of Cu(In,Ga)Se2 films employing H2SeO3 as an Se source via heating rates at (a) 7 oC/min, (c) 4 oC/min, and (e) 1oC/min. The inset refers the cross-sectional micrograph of the corresponding films……....103 Figure 4.6 SIMS profiles of copper, indium, gallium, and selenium species of the prepared films employing H2SeO3 as an Se source…..104 Figure 4.7 Rietlveld refinements of the prepared films employing H2SeO3 as an Se source after heating at 350oC in the reducing atmosphere………………………………………...…………..105 Figure 4.8 Raman spectra of prepared films employing H2SeO3 as an Se source after heating at 350oC in the reducing atmosphere. The inset shows the A1 modes of CuInSe2 and Cu(In,Ga)Se2 film……………………………………………………………...106 Figure 4.9 Schematic diagrams of the precursor films hated at 550oC for 30 min in a reducing atmosphers containing selenium vapor (sample A) and hated at 550oC for 30 min in a reducing atmosphers (sample B, sample C, and sample D)…………...107 Figure 4.10 X-ray diffraction patterns of (a) sample A, (b) sample B, (c) sample C, and (d) sample D…………………………………..108 Figure 4.11 Scanning electron micrographs of (a) sample A, (b) sample B, (c) sample C, and (d) sample D……………………………….109 Figure 4.12 SIMS profiles of element Cu, In, Ga, Se, and Mo of (a) sample A, (b) sample B, (c) sample C, and (d) sample D……………110 Figure 4.13 Grazing incident X-ray diffraction patterns of (a) sample A, (b) sample B, (c) sample C, and (d) sample D…………………...111 Figure 4.14 Relation between Mo phase in the obtained films and the incident angles of X-ray beams……………………………….112 Figure 4.15 Relation between MoSe2 phase in the obtained films and the incident angles of X-ray beams……………………………….113 Figure 4.16 Current-voltage characteristics of thefabricated solar cells with ((a) sample A, (b) sample B, (c) sample C, and (d) sample D as the absorber layers………………………………………114 Figure 5.1 X-ray diffraction patterns of Cu(In,Ga)Se2 films (a) without bismuth ions and added with (b) 0.5 mol% , (c) 1.0 mol%, and (d) 1.5 mol% bismuth ions upon heating at 500oC for 30 min……………………………………………………………...134 Figure 5.2 X-ray diffraction patterns of Cu(In,Ga)Se2 films without bismuth ions quenched at varied temperatures.……………..135 Figure 5.3 X-ray diffraction patterns of Cu(In,Ga)Se2 films added with 1.0 mol% bismuth ions quenched at varied temperatures……...136 Figure 5.4 Scanning electron micrographs of of Cu(In,Ga)Se2 films (a) without bismuth ions and added with (b) 0.5 mol% , (c) 1.0 mol%, and (d) 1.5 mol% bismuth ions upon heating at 500oC for 30 min. The inset refers the cross-section micrographs of the corresponding films.............................................................137 Figure 5.5 Atomic force micrographs of Cu(In,Ga)Se2 films added (a) without bismuth ions and added with (b) 0.5 mol% , (c) 1.0 mol%, and (d) 1.5 mol% bismuth ions upon heating at 500oC for 30 min......................................................................................138 Figure 5.6 (a) Temperature dependence of PL spectra of Cu(In,Ga)Se2 films (a) without bismuth ions and (b) added with 1.0 mol% bismuth ions at 10 K......................................................................139 Figure 5.7 Plot of carrier concentration (Np) and resistivity (ρ) of Cu(In,Ga)Se2 films added with various bismuth contents…….140 Figure 5.8 Solar cell parameters of Cu(In,Ga)Se2 films added with various bismuth contents upon heating at 500oC for 30 min.….............141 Figure 5.9 Current-voltage characteristics of 500oC-selenized Cu(In,Ga)Se2 films added with 1.0 mol% bismuth ions…………………..…...142 Figure 5.10 X-ray diffraction patterns of Cu(In,Ga)Se2 films doped with (a) absence of dopants, (b) sodium ions, (c) bismuth ions, and (d) sodium ions and bismuth ions upon heating at 500oC for 30 min. Inset refers relation between the ratio of I(112)/I(220/204) and the sample name.…………………..……………………………….....143 Figure 5.11 Scanning electron micrographs of Cu(In,Ga)Se2 films doped with (a) absence of dopants, (b) sodium ions, (c) bismuth ions, and (d) sodium ions and bismuth ions upon heating at 500oC for 30 min. Inset images refer the atomic force micrographs of the corresponding films.………..………………………………….....144 Figure 5.12 Current-voltage characteristics of Cu(In,Ga)Se2 films doped with (a) absence of dopants, (b) sodium ions, (c) bismuth ions, and (d) sodium ions and bismuth ions upon heating at 500oC for 30 min...................................................................................................145 Figure 5.13 (a) versus V for the shunt conductance (G), and (b) versus for the determination of the series resistance (Rs).………………………………………………..…...146 Figure 5.13 (a) Temperature dependence of PL spectra for Cu(In,Ga)Se2 films doped with sodium and bismuth ions, and (b) low temperature PL spectra for Cu(In,Ga)Se2 films at 10K……….147 Figure 6.1 X-ray diffraction patterns of the seeding layers (a) heated at 200oC in air and selenized at (b) 300oC, (c) 400oC, and (d) 500oC in a reducing atmosphere containing Se vapor.……………......159 Figure 6.2 X-ray diffraction patterns of Cu(In,Ga)Se2 films using the seeding layers (a) heated at 200oC in air and selenized at (b) 300oC, (c) 400oC, and (d) 500oC in a reducing atmosphere containing Se vapor. The inset refers the relation between the intensity ratio of the (112) peak to the (220/204) peak and the seeding layers that were selenized at varied temperatures……160 Figure 6.3 Grazing incident X-ray diffraction patterns of Cu(In,Ga)Se2 films using the seeding layers (a) heated at 200oC in air and selenized at (b) 300oC, (c) 400oC, and (d) 500oC in a reducing atmosphere containing Se vapor as the incident angles were set to 7o. The inset refers the relation between the intensity ratio of the (112) peak to the (220/204) peak and the seeding layers that were selenized at varied temperatures..................................................161 Figure 6.4 Scanning electron micrographs of Cu(In,Ga)Se2 films using the seeding layers (a) heated at 200oC in air and selenized at (b) 300oC, (c) 400oC, and (d) 500oC in a reducing atmosphere containing Se vapor. The insets refer the cross-section micrographs of the corresponding films......................................162 Figure 6.5 Plot of carrier concentration (Np) and resistivity (ρ) of Cu(In,Ga)Se¬2 films using the seeding layers that were selenized at varied temperatures………………………………..163 Figure 6.6 Current-voltage characteristics of the fabricated Cu(In,Ga)Se2 solar cells using the seeding layers (a) heated at 200oC in air and selenized at (b) 300oC, (c) 400oC, and (d) 500oC in a reducing atmosphere containing Se vapor.………………………………..164 Figure 6.7 Current-voltage characteristics of Cu(In,Ga)Se2 solar cells under illumination: (a) J versus V, (b) dJ/dV versus V for the shunt conductance, (c) R versus J curve for the series resistance and the diode ideality factor, and (d) (J+Jsc-GV) versus (V-RsJ) for the determination of the reverse saturation current (J0).................................................................................163 Figure 7.1 Summary of the main conclusions in the thesis.……………...173 List of Tables Table 3.1 Crystal structural data and lattice parameters of Cu(In,Ga)Se2 films………………………………………………………………...66 Table 4.1 Photovoltaic properties of Cu(In,Ga)Se2 solar cells with various incorporation of selenium.…..........................................................98 Table 5.1 Solar cell parameters of Cu(In,Ga)Se2 films (a) without bismuth ions and added with (b) 0.5 mol% , (c) 1.0 mol%, and (d) 1.5 mol% bismuth ions upon heating at 500oC for 30 min………..130 Table 5.2 Sample names for Cu(In,Ga)Se2 films added with varied dopants……………………………………………………………131 Table 5.3 Solar cell and diode parameters of Cu(In,Ga)Se2 films……….132 Table 5.4 Electrical properties of Cu(In,Ga)Se2 films……………………133 Table 6.1 Solar cell parameters of Cu(In,Ga)Se2 films employing the seeding layers (a) without selenization and selenized at (b) 300oC, (c) 400oC, and (d) 500oC……………………………………...….157 Table 6.2 Solar cell and diode parameters of Cu(In,Ga)Se2 films.……....158 Table 7.1 Summary of the controlled factors and the efficiencies of the fabricated solar cells………..…………………………………....171 Table 7.2 Comparison of the solution coating for Cu(In,Ga)Se2 films that are produced by different research groups…………………….172 | |
dc.language.iso | en | |
dc.title | 硒化銅銦鎵薄膜太陽電池之光吸收層薄膜製備及特性分析 | zh_TW |
dc.title | Preparation and Characterization of Copper Indium Gallium Diselenide Films Used in the Absorber Layers of Thin-Film Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 黃恆盛,吳紀聖,陳啟東,徐振哲 | |
dc.subject.keyword | 硒化銅銦鎵,薄膜太陽電池,光吸收層薄膜, | zh_TW |
dc.subject.keyword | Cu(In,Ga)Se2,Thin-film solar cells,Absorber layers, | en |
dc.relation.page | 186 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2012-11-05 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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