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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林新智 | |
dc.contributor.author | Li-Tien Huang | en |
dc.contributor.author | 黃俐恬 | zh_TW |
dc.date.accessioned | 2021-06-07T17:47:58Z | - |
dc.date.copyright | 2013-07-25 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-05-10 | |
dc.identifier.citation | Reference
[1] R. L. Puurunen, 'Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process,' Journal of Applied Physics, vol. 97, p. 121301, 2005. [2] H. Iwai, 'Roadmap for 22nm and beyond (Invited Paper),' Microelectronic Engineering, vol. 86, pp. 1520-1528, 2009. [3] G. E. Moore, 'Cramming more components onto integrated circuits, Reprinted from Electronics, volume 38, number 8, April 19, 1965, pp.114 ff,' Solid-State Circuits Newsletter, IEEE, vol. 11, pp. 33-35, 2006. [4] C. Zhao, C. Z. Zhao, M. Werner, S. Taylor, and P. R. Chalker, 'Advanced CMOS Gate Stack: Present Research Progress,' ISRN Nanotechnology, vol. 2012, pp. 1-35, 2012. [5] D. A. B. S.H. Lo, Y. Taur, W.I. Wang, Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's, Electron Device Letters, IEEE, 18 (1997) 209-211.Lo, S. H., D. A. Buchanan, Y. Taur, and W. I. Wang, 'Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's,' Electron Device Letters, IEEE, vol. 18, pp. 209-211, 1997. [6] B. V. M. DEPAS, P. W. MERTENS, R. L. VAN MEIRHAEGHE, and M. M. HEYNS, 'Determination of tunnelling parameters in ultra-thin oxide layer poly-Si-SiO2-Si structures,' Solid-State Electronics, vol. 38, pp. 1465-1471, 1995. [7] G. D. Wilk, R. M. Wallace, and J. M. Anthony, 'High-kappa gate dielectrics: Current status and materials properties considerations,' Journal of Applied Physics, vol. 89, pp. 5243-5275, 05/15/ 2001. [8] C.-S. Kang, C. Hag-Ju, C. Rino, K. Young-Hee, K. Chang-Yong, R. Se Jong, et al., 'The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode,' Electron Devices, IEEE Transactions on, vol. 51, pp. 220-227, 2004. [9] K. Kita, K. Kyuno, and A. Toriumi, 'Permittivity increase of yttrium-doped HfO2 through structural phase transformation,' Applied Physics Letters, vol. 86, p. 102906, 2005. [10] H. Momida, T. Hamada, T. Yamamoto, T. Uda, N. Umezawa, T. Chikyow, et al., 'Effects of nitrogen atom doping on dielectric constants of Hf-based gate oxides,' Applied Physics Letters, vol. 88, p. 112903, 2006. [11] G. Pant, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, et al., 'Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics,' Applied Physics Letters, vol. 88, p. 032901, 2006. [12] J. H. Choi, Y. Mao, and J. P. Chang, 'Development of hafnium based high-k materials—A review,' Materials Science and Engineering: R: Reports, vol. 72, pp. 97-136, 2011. [13] H. Jiang, R. I. Gomez-Abal, P. Rinke, and M. Scheffler, 'Electronic band structure of zirconia and hafnia polymorphs from the GW perspective,' Physical Review B, vol. 81, 2010. [14] C. S. K. Hag-Ju Cho, Katsunori Onishi, Sundar Gopalan, Renee Nieh, Rino Choi, and a. J. C. L. Siddarth Krishnan, 'Structural and Electrical Properties of HfO2 with Top Nitrogen Incorporated Layer,' vol. 23, pp. 249-251, 2002. [15] C. S. Kang, H.-J. Cho, K. Onishi, R. Nieh, R. Choi, S. Gopalan, et al., 'Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics,' Applied Physics Letters, vol. 81, p. 2593, 2002. [16] M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, 'Application of HfSiON as a gate dielectric material,' Applied Physics Letters, vol. 80, p. 3183, 2002. [17] G. He, L. D. Zhang, G. H. Li, M. Liu, L. Q. Zhu, S. S. Pan, et al., 'Spectroscopic ellipsometry characterization of nitrogen-incorporated HfO2 gate dielectrics grown by radio-frequency reactive sputtering,' Applied Physics Letters, vol. 86, p. 232901, 2005. [18] M. A. Quevedo-Lopez, M. R. Visokay, J. J. Chambers, M. J. Bevan, A. LiFatou, L. Colombo, et al., 'Dopant penetration studies through Hf silicate,' Journal of Applied Physics, vol. 97, p. 043508, 2005. [19] J. F. Kang, H. Y. Yu, C. Ren, M. F. Li, D. S. H. Chan, H. Hu, et al., 'Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering,' Applied Physics Letters, vol. 84, p. 1588, 2004. [20] J. H. Kim, T. J. Park, M. Cho, J. H. Jang, M. Seo, K. D. Na, et al., 'Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection,' Journal of The Electrochemical Society, vol. 156, p. G48, 2009. [21] C. Lee, J. Choi, M. Cho, J. Park, C. S. Hwang, H. J. Kim, et al., 'Nitrogen incorporation engineering and electrical properties of high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate,' Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 22, p. 1838, 2004. [22] M. S. Akbar, N. Moumen, J. Barnett, J. Sim, and J. C. Lee, 'Effect of NH3 surface nitridation temperature on mobility of ultrathin atomic layer deposited HfO2,' Applied Physics Letters, vol. 86, p. 032906, 2005. [23] K. S. Park, K. H. Baek, D. P. Kim, J. C. Woo, L. M. Do, and K. S. No, 'Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics,' Applied Surface Science, vol. 257, pp. 1347-1350, 2010. [24] N.-J. Seong, W.-J. Lee, and S.-G. Yoon, 'Structural and electrical characterizations of ultrathin HfO2 gate dielectrics treated by nitrogen-plasma atmosphere,' Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, p. 312, 2006. [25] R. Puthenkovilakam, M. Sawkar, and J. P. Chang, 'Electrical characteristics of postdeposition annealed HfO2 on silicon,' Applied Physics Letters, vol. 86, p. 202902, 2005. [26] P. D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, and J. G. Ekerdt, 'Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100),' Journal of Applied Physics, vol. 91, p. 4353, 2002. [27] S. Sayan, S. Aravamudhan, B. W. Busch, W. H. Schulte, F. Cosandey, G. D. Wilk, et al., 'Chemical vapor deposition of HfO2 films on Si(100),' Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 20, p. 507, 2002. [28] Y. Hoshino and Y. Kido, 'Dynamic response of target electrons on elastic scattering cross sections for heavy-ion impact on a high-Z atom,' Physical Review A, vol. 68, 2003. [29] A. Mukhopadhyay, J. Sanz, and C. Musgrave, 'First-principles calculations of structural and electronic properties of monoclinic hafnia surfaces,' Physical Review B, vol. 73, pp. 115330-115337, 2006. [30] H. B. Profijt, S. E. Potts, M. C. M. van de Sanden, and W. M. M. Kessels, 'Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges,' Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 29, p. 050801, 2011. [31] J. P. L. Niinistö, J. Niinistö, M. Putkonen, and M. Nieminen, 'Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials,' physica status solidi (a), vol. 201, pp. 1443-1452, 2004. [32] S. M. George, 'Atomic Layer Deposition: An Overview,' Chemical Reviews, vol. 110, pp. 111-131, 2010. [33] A. W. Ott, Klaus, J. W., Johnson, J. M.,George, S. M., 'Al2O3 thin film growth on Si(100) using binary reaction sequence chemistry,' Thin Solid Films, vol. 292, pp. 135-144, 1997. [34] S. B. S. Heil, J. L. van Hemmen, C. J. Hodson, N. Singh, J. H. Klootwijk, F. Roozeboom, et al., 'Deposition of TiN and HfO2 in a commercial 200mm remote plasma atomic layer deposition reactor,' Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 25, p. 1357, 2007. [35] S. B. S. Heil, E. Langereis, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, 'Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition,' Journal of The Electrochemical Society, vol. 153, p. G956, 2006. [36] H. Wang, J.-J. Wang, R. Gordon, J.-S. b. M. Lehn, H. Li, D. Hong, et al., 'Atomic Layer Deposition of Lanthanum-Based Ternary Oxides,' Electrochemical and Solid-State Letters, vol. 12, p. G13, 2009. [37] E. Sun, F. H. Su, Y. T. Shih, H. L. Tsai, C. H. Chen, M. K. Wu, et al., 'An efficient Si light-emitting diode based on an n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure,' Nanotechnology, vol. 20, p. 445202, Nov 4 2009. [38] T. J. Park, J. H. Kim, J. H. Jang, K. D. Na, C. S. Hwang, and J. H. Yoo, 'Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations,' Journal of Applied Physics, vol. 104, p. 054101, 2008. [39] P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, and R. M. Wallace, 'Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100),' Journal of Applied Physics, vol. 101, p. 114108, 2007. [40] J. Lu, J. Aarik, J. Sundqvist, K. Kukli, A. Hårsta, and J. O. Carlsson, 'Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate,' Journal of Crystal Growth, vol. 273, pp. 510-514, 2005. [41] D. A. Muller and G. D. Wilk, 'Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics,' Applied Physics Letters, vol. 79, p. 4195, 2001. [42] S. Ferrari and G. Scarel, 'Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100),' Journal of Applied Physics, vol. 96, p. 144, 2004. [43] N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, et al., 'First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics,' Applied Physics Letters, vol. 86, p. 143507, 2005. [44] S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, et al., 'Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire,' Applied Physics Letters, vol. 75, p. 3947, 1999. [45] M. Hori, H. Kondo, and M. Hiramatsu, 'Radical-controlled plasma processing for nanofabrication,' Journal of Physics D: Applied Physics, vol. 44, p. 174027, 2011. [46] J. H. S. E. Cartier, and D. A. Buchanan, 'Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen,' Applied Physics Letters, vol. 63, pp. 1510-1512, 1993. [47] A. Arranz, 'Synthesis of hafnium nitride films by 0.5–5 keV nitrogen implantation of metallic Hf: an X-ray photoelectron spectroscopy and factor analysis study,' Surface Science, vol. 563, pp. 1-12, 2004. [48] C. C. P. Jessica Torres, Stephen J. Bransfield, and D. Howard Fairbrother, 'Low-Temperature Oxidation of Nitrided Iron Surfaces,' J. Phys. Chem. B, vol. 107, pp. 5558-5567, 2003. [49] U. Michael Quast, Peter Mayr, Heinz-Rolf Stock, Harry Podlesak,Bernhard Wielage, 'In situ and ex situ examination of plasma-assisted nitriding of aluminium alloys,' pp. 238-249, 2001. [50] M.-H. Lin, C.-K. Lan, C.-C. Chen, and J.-Y. Wu, 'Electrical properties of HfO2/La2O3 gate dielectrics on Ge with ultrathin nitride interfacial layer formed by in situ N2/H2/Ar radical pretreatment,' Applied Physics Letters, vol. 99, p. 182105, 2011. [51] J. R. A. Sokolowska, P. Beer, L. Maldzinski, J. Tacikowski, J. Baszkiewicz,, 'Nitrogen transport mechanisms in low temperature ion nitriding,' Surface and Coatings Technology pp. 1040-1045, 2001. [52] A. Garscadden and R. Nagpal, 'Non-equilibrium electronic and vibrational kinetics in H2 -N2 and H2 discharges,' Plasma Sources Science and Technology, vol. 4, p. 268, 1995. [53] S. Taktak, I. Gunes, S. Ulker, and Y. Yalcin, 'Effect of N2+H2 gas mixtures in plasma nitriding on tribological properties of duplex surface treated steels,' Materials Characterization, vol. 59, pp. 1784-1791, 2008. [54] M. Tamaki, Y. Tomii, and N. Yamamoto, 'The role of hydrogen in plasma nitriding: Hydrogen behavior in the titanium nitride layer,' Plasmas & Ions, vol. 3, pp. 33-39, 2000. [55] R. M. F. G. B. Alers, Y. H. Wong, B. Dennis, A. Pinczuk, G. Redinbo, R. Urdahl, E. Ong, and Z. Hasan, 'Nitrogen plasma annealing for low temperature Ta2O5 films,' Applied Physics Letters, vol. 72, pp. 1308-1310, 1998. [56] P. W. Peacock and J. Robertson, 'Behavior of hydrogen in high dielectric constant oxide gate insulators,' Applied Physics Letters, vol. 83, p. 2025, 2003. [57] E.-C. Lee, 'Nitrogen-induced interface defects in Si oxynitride,' Physical Review B, vol. 77, pp. 104108-4, 2008. [58] R. I. Hegde and D. H. Triyoso, 'Sub-9 Å equivalent oxide thickness scaling using hafnium zirconate dielectric with tantalum carbide gate,' Journal of Applied Physics, vol. 104, p. 094110, 2008. [59] W. J. Maeng and H. Kim, 'Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics,' Applied Physics Letters, vol. 91, p. 092901, 2007. [60] J. Chastain (Ed.), 'Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corporation, Minnesota,' 1992. [61] H. Momida, T. Hamada, and T. Ohno, 'First-Principles Study of Dielectric Properties of Amorphous High-k Materials,' Japanese Journal of Applied Physics, vol. 46, pp. 3255-3260, 2007. [62] D. Fischer and A. Kersch, 'The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles,' Applied Physics Letters, vol. 92, p. 012908, 2008. [63] M. Y. Ho, H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, P. M. Voyles, et al., 'Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition,' Journal of Applied Physics, vol. 93, p. 1477, 2003. [64] D. A. Neumayer and E. Cartier, 'Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition,' Journal of Applied Physics, vol. 90, p. 1801, 2001. [65] K. Tomida, K. Kita, and A. Toriumi, 'Dielectric constant enhancement due to Si incorporation into HfO2,' Applied Physics Letters, vol. 89, p. 142902, 2006. [66] T. J. Park, J. H. Kim, J. H. Jang, K. D. Na, C. S. Hwang, and J. H. Yoo, 'Influence of Phase Separation on Electrical Properties of ALD Hf–Silicate Films with Various Si Concentrations,' Electrochemical and Solid-State Letters, vol. 11, p. H121, 2008. [67] H. T. K. Choi, H. Harris and S. Gangopadhyay, L. Xie and M. White, 'Initial growth of interfacial oxide during deposition of HfO2 on silicon ' vol. 85, pp. 215-217, 2004. [68] J. Kim and K. Yong, 'Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor deposition,' Journal of Applied Physics, vol. 100, p. 044106, 2006. [69] H. Kato, T. Nango, T. Miyagawa, T. Katagiri, K. S. Seol, and Y. Ohki, 'Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films,' Journal of Applied Physics, vol. 92, p. 1106, 2002. [70] R. L. Opila, G. D. Wilk, M. A. Alam, R. B. van Dover, and B. W. Busch, 'Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge,' Applied Physics Letters, vol. 81, p. 1788, 2002. [71] S. P. Murarka, C. C. Chang, 'Thermal oxidation of hafnium silicide films on silicon ' Applied Physics Letters, vol. 37, pp. 639-641, 1980. [72] B. H. Lee, L. Kang, R. Nieh, W.-J. Qi, and J. C. Lee, 'Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing,' Applied Physics Letters, vol. 76, p. 1926, 2000. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/15563 | - |
dc.description.abstract | 本論文研究利用遠程電漿輔助原子氣相沉積(Remote Plasma Atomic Layer Deposition,簡稱RP-ALD)技術成長二氧化鉿(HfO2)薄膜作為閘極介電層。針對二氧化鉿(HfO2)閘極介電層,施以不同處理條件,例如電漿瓦數、不同種類含氮的氣氛,以及阻障層(buffer layer),研究其材料結構的改變,並製作金屬/絕緣層/半導體的電容元件結構探討其電容值、閘極漏電流與其他相關之電性。首先,研究結果發現,對於物理厚度為10 nm的HfO2閘極介電層,經過NH3電漿氣氛處理之後,在電漿瓦數為300W時,可以獲得厚度約為0.3nm的超薄介面層(interfacial layer)、等效介電係數(Keff)約為20.9、漏電流密度為9×10-6A/cm2,以及等效氧化層厚度(Capacitance Equivalent Thickness, CET)為1.9nm;另一方面,經由N2氣氛處理的HfO2閘極介電層,其介面層厚度則高達1.5 nm。此研究結果顯示,經由含H氣氛的氮化處理程序,對於HfO2閘極介電層的電特性有顯著之提升。其次,對於物理厚度為 6 nm的HfO2薄膜,利用原位(in-situ) NH3電漿處理可以有效將CET由2.1nm降低至1.6nm,漏電流密度則由1.5x10-3A/cm2降至6×10-4A/cm2,並且能有效抑制介面厚度的生成。最後,本研究利用RP-ALD技術在HfO2與矽基板之間成長二氧化矽(SiO2)薄膜作為之阻障層,可促進HfO2結晶相的形成,其CET可由2.1 nm降低至1.4 nm,Keff(~由12提高至17),而漏電流密度可以由1.5x10-3 A/cm2有效抑制至4×10-4A/cm2。 | zh_TW |
dc.description.abstract | Hafnium oxide (HfO2) gate dielectrics were prepared by the Remote Plasma Atomic Layer Deposition (RP-ALD) technique. The effects of the HfO2 gate dielectrics treated by the different processing conditions, including the radio-frequency (RF) plasma power, different nitrogen-containing atmospheres, as well as the insertion of barrier layer (buffer layer), were investigated. The first part of this thesis reports that significant increase of effective dielectric constant (keff), decrease of capacitance equivalent thickness (CET), reduction in leakage current density, and suppression of the interfacial layer (IL) thickness were observed with an increase of the RF power in the remote NH3 plasma treatment. An ultrathin interfacial layer (~0.3 nm), a high keff (20.9), a low leakage current density (9×10-6A/cm2), and a low CET (1.9 nm) in the nitrided HfO2 film were accomplished. Next, the characteristics of HfO2 gate dielectrics treated by a variety of post-deposition nitridation processes, including remote N2, N2/H2, and NH3 plasma, were investigated. The nitrogen content in the HfO2 thin film treated by remote hydrogen-containing plasma is higher than that treated only by remote nitrogen plasma, indicating that the participation of hydrogen in the nitridation process plays a critical role to improve the electrical properties of HfO2 gate dielectrics. Then the properties of HfO2 gate dielectrics treated by the nitrogen incorporation with different nitridation configurations, including bottom, in-situ, and top nitridation, are reported. The result demonstrates that significant increase of keff, decrease of CET, reduction in leakage current density, and suppression of the IL thickness were observed by the in-situ remote NH3 plasma treatment, with achievement of a low CET (1.6 nm), a high keff (~14.2), and a low leakage current density (6.7×10-4A/cm2). Finally, a SiO2 buffer layer grown by RP-ALD was inserted between HfO2 and the Si substrate to improve the electrical properties of the gate dielectrics. The tetragonal phase in HfO2 and the silicate in the interfacial layer were observed, which results in the increase of the k-value and reduce the gate leakage current. A low CET of 1.4 nm, a high keff of ~17, and a low leakage current density of 4×10-4A/cm2 were achieved in the Pt/HfO2/ALD-SiO2/Si structure. | en |
dc.description.provenance | Made available in DSpace on 2021-06-07T17:47:58Z (GMT). No. of bitstreams: 1 ntu-102-D95527011-1.pdf: 1628718 bytes, checksum: d21bce620e4ef886fdc7c7a422af333a (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | Abstract V
List of Tables XIII Chapter 1 Introduction 1 1.1 Introduction for Device Scaling 1 1.2 Motivation for High-k Dielectric 2 1.3 High- k dielectric material—HfO2 3 1.4 Nitrogen Engineering 4 1.5 Brief of Atomic Layer Deposition Process 5 1.6 Outline of the thesis 11 Chapter 2 Improvement in Electrical Characteristics of HfO2 Gate Dielectrics Treated by Remote NH3 Plasma 14 2.1 Motivation 14 2.2 Experiments 14 2.3 Results and discussion 15 2.4 Conclusion 27 Chapter 3 Effects of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments 29 3.1 Motivation 29 3.2 Experiments 29 3.3 Results and discussion 30 3.4 Conclusions 40 Chapter 4 Nitrogen Engineering of HfO2 Treated by Remote NH3 Plasma 42 4.1 Motivation 42 4.2 Experiments 42 4.3 Results and discussion 43 4.4 Conclusions 51 Chapter 5 Reduction of capacitance equivalent thickness on HfO2/Si capacitors by adding an atomic-layer-deposited SiO2 buffer layer 53 5.1 Motivation 53 5.2 Experiments 54 5.3 Results and discussion 54 5.4 Conclusions 64 Chapter 6 Summary 65 Reference 68 | |
dc.language.iso | en | |
dc.title | 利用遠程電漿輔助原子氣相沉積技術成長二氧化鉿之氮化與介面工程 | zh_TW |
dc.title | Nitrogen and Interface Engineering of HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 博士 | |
dc.contributor.coadvisor | 陳敏璋 | |
dc.contributor.oralexamcommittee | 李敏鴻,廖洺漢,鄭鴻祥,邱正杰,王錦焜 | |
dc.subject.keyword | 遠程電漿輔助原子層沉積技術,二氧化鉿,氮化處理, | zh_TW |
dc.subject.keyword | remote plasma atomic layer deposition,hafnium dioxide (HfO2),nitridation process, | en |
dc.relation.page | 74 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2013-05-10 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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