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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Chiao-Cheng Yu | en |
dc.contributor.author | 游朝政 | zh_TW |
dc.date.accessioned | 2021-05-12T09:37:53Z | - |
dc.date.available | 2018-08-16 | |
dc.date.available | 2021-05-12T09:37:53Z | - |
dc.date.copyright | 2018-08-16 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-08-14 | |
dc.identifier.citation | [1] Simon M. Sze, Kwok K. Ng,”Physics of Semiconductor Devices “
[2] C. A. Lee, R. A. Logan, R. L. Batdorf, J. J. Kleimack, W. Wiegmann,'Ionization rates of holes and electrons in silicon', Phys. Rev., vol. 137, pp. A761-A773, May 1964. [3]鄧建鴻,”以電腦輔助半導體工藝模擬及器件模擬工具設計砷化銦環繞式閘極奈米線穿隧式場效應電晶體之結構”,2017年7月 [4] Meier, H.T.J., “Design, Characterization and Simulation of Avalanche Photodiodes”, Dissertation, ETH Zurich, Switzerland (2011). [5] S. Forrest, “Performance of InGaAsP photodiodes with dark current limited by diffusion, generation recombination, and tunneling,” IEEE J. Quantum Electron., vol. 17, no. 2, pp. 217–226, Feb. 1981. [6] Sze, S. M. and Gibbons, G., Effect of Junction Curvature on Breakdown Voltage in Semiconductors, Solid State Electron, 9, 1966, pp. 831-845. [7] https://ecee.colorado.edu/~bart/book/book/chapter2/ch2_10.html [8] https://zh.wikipedia.org/wiki [9] https://baike.baidu.com/item [10] 半導體元件物理,李嗣涔,三民書局股份有限公司。 [11] https://ecee.colorado.edu/~bart/book/book/chapter4/ch4_3.htm#fig4_3_5 [12] T. Knežević, T. Suligoj, “Analysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment”, Proc. of the 39th International Convention MIPRO 2016, pp. 34-39, Rijeka, Croatia [13] C. L. F. Ma, M. J. Deen, and L. Tarof, “Characterization and modelling of SAGCM InP/InGaAs avalanche photodiodes for multigigabit optical fiber communications,” in Advances in Imaging and Electron Physics, vol. 99, P. Hawkes, Ed. New York, NY: Academic, 1998, pp. 65–170 [14] B. E. A. Saleh, M. C. Teich, Eds., Fundamentals of Photonics (Wiley, New York, 1991). [15]G. J. van Gurp, P. R. Boudewijn, M. N. C. Kempeners and D. L. A. Tjaden, “Zinc diffusion in n-type indium phosphide” Journal of Applied Physics, Vol. 61, pp. 1846-1855, 1987. [16] Sentaurus Process User Guide, Synopsys, Mountain View, CA, USA, Mar. 2016. [17] T. Cheng-Yu, J. Seiler, and M. Geva, “Modeling of Zn diffusion in InP/InGaAs materials during MOVPE growth,” in Proc. 11th Int. Conf. Indium Phosphide Related Mater., 1999, pp. 245–248. [18] B. Baliga, Fundamentals of Power Semiconductor Devices. New York: Springer Verlag, 2008 [19] http://www.hp1718.com/pddetailthree/product/detail-17367766.html [20] HP 4155A/4156A Semiconductor Parameter Analyzer User's Task Guide [21] T. P. Pearsall, M. A. Pollack. 1985. Semiconductors and Semimetals, Vol. 22. New York: Academic Press [22] http://mropengate.blogspot.com/2015/04/cubic-spline-interpolation.html [23]私下諮詢林浩雄教授 [24] H. Ando, H. Kaaba, M. Ito, and T. Kaneda, “Tunneling current in InGaAs and optimum design for InGaAs/InP avalanche photo-diodes,” Jpn. J. Appl. Phys., vol. 19, no. 6, pp. L277–L280, Jun. 1980. [25] https://www.hamamatsu.com/resources/pdf/ssd/g8931_series_kapd1018e.pdf,本研究參考G8931-04 [26] S. A. Stockman, A. W. Hanson, C. M. Coulomb, M. T. Fresina, J. E. Baker, and G. E. Stillman, J. Electron. Mater. 23, 791 ,1994 [27] K. L Hess, S. W. Zehr, W. H. Chcng, and D. Perrachione, J. Electron. Mater. Hi, 127 (1987) [28] C. X. Shi, D. Grutzmacher, M. Stollenwerk, Q. K. Wang, and K. Heime, IEEE Trans. Electron Devices 39, 1028 ,1992 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/handle/123456789/1387 | - |
dc.description.abstract | 本論文研究雪崩光偵測器(Avalanche photodiode,APD)的結構參數和邊緣區與中心區最大電場比值的關係,研究結構參數對崩潰電壓的影響,得出倍增層與吸收層參雜濃度N_D與倍增層厚度變化不劇烈影響崩潰電壓的範圍,倍增層空間電荷量Qc 介於3.8×10^(-7) (C·cm^(-2))與4.8×10^(-7) (C·cm^(-2))且ND 低於1×10^14(1/cm^3),並且得出曲率半徑最小值越大,越能降低邊緣區與中心區最大電場比值的結果。以Sentaurus TCAD製程模擬軟體模擬鋅在磷化銦中擴散不同時間的濃度分布,並研究其PN接面的曲率半徑計算方式。規劃設計符合特定崩潰電壓與擊穿電壓的結構參數的步驟,並實地設計出一組符合特定規格要求的APD結構參數。量測一APD樣品並分析,列出需要改善的地方。 | zh_TW |
dc.description.abstract | This research studies the relation between the structure parameters of Avalanche photodiode(APD) and the ratio of maximum electric field in the edge and central region.In addition, the effects of variation of structure parameters on breakdown voltage are studied and get the range where the variation of doping concentration of absorption layer and multiplication layer and thickness of multiplication layer doesn’t drastically change the breakdown voltage: doping concentration of absorption layer and multiplication layer N_D lower than 1×10^14(1/cm^3)and space charge of charge layer ranging from 3.8×10^(-7) (C·cm^(-2) ) to 4.8×10^(-7) (C·cm^(-2)). This research also concludes that the larger the minimum of radius of curvature is,the smaller the ratio of maximum electric field in the edge and central region is.Zinc diffusion in InP is simulated using Sentaurus TCAD and the doping profile has been gotten.The method to calculate the radius of curvature of the PN junction of the doping profile has been studied.The steps of designing doping and thickness of every layer of an APD are summarized and are demonstrated in an example.The APD sample of the department is measured and analyzed.Disadvantages of the sample have been proposed. | en |
dc.description.provenance | Made available in DSpace on 2021-05-12T09:37:53Z (GMT). No. of bitstreams: 1 ntu-107-R05941063-1.pdf: 1986895 bytes, checksum: 82afa3ee31642997421712fa4ef2fcae (MD5) Previous issue date: 2018 | en |
dc.description.tableofcontents | 誌 謝......................................................................Ⅰ
中文摘要......................................................................Ⅱ 英文摘要......................................................................Ⅲ 目 錄......................................................................Ⅳ 圖 目 錄......................................................................Ⅵ 表 目 錄......................................................................Ⅷ 第一章 緒論................................................................. 1 第一節 研究背景.........................................................1 第二節 研究動機.........................................................2 第三節 研究目的.........................................................2 第四節 論文架構.........................................................2 第二章 文獻探討..............................................................3 第一節 名詞解釋........................... .............................3 第二節 光偵測器理論背景.................................................5 第三章 光偵測器結構參數與最大電場和崩潰電壓之關係.......................18 第一節 結構參數與邊緣區及中心區最大電場之關係......................... 18 第二節 d、Q_c和N_D的變化對V_bd與V_pt之影響.................................22 第四章 以TCAD模擬鋅在磷化銦中的擴散........................................37 第一節 曲率半徑最小值r_0對電場比值的影響.................................37 第二節 使用軟體 Sentaurus TCAD..........................................38 第三節 軟體使用物理模型.................................................38 第四節 曲率半徑最小值r_0的計算方法.......................................40 第五章 光偵測器的設計........................................................45 第一節 光偵測器的設計步驟...............................................45 第二節 光偵測器的設計實例...............................................47 第三節 TCAD模擬結果.................................................48 第六章 樣品量測結果與分析...................................................53 第一節 樣品簡介........................................................53 第二節 量測儀器........................................................54 第三節 順偏壓與反偏壓量測結果..........................................56 第四節 電容電壓特性....................................................58 第七章 結論.......................... ......................................60 參考文獻.....................................................................61 | |
dc.language.iso | zh-TW | |
dc.title | 雪崩光偵測器結構設計 | zh_TW |
dc.title | Structure design of Avalanche photodiode | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 羅俊傑,毛明華,金宇中 | |
dc.subject.keyword | 雪崩光偵測器,崩潰電壓,擊穿電壓,參雜濃度與厚度設計,Sentaurus TCAD模擬, | zh_TW |
dc.subject.keyword | Avalanche photodiode(APD),breakdown voltage,punchthrough voltage,doping and thickness design,Sentaurus TCAD simulation, | en |
dc.relation.page | 61 | |
dc.identifier.doi | 10.6342/NTU201803147 | |
dc.rights.note | 同意授權(全球公開) | |
dc.date.accepted | 2018-08-14 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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