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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳敏璋 | |
dc.contributor.author | Hsing-Chao Chen | en |
dc.contributor.author | 陳星兆 | zh_TW |
dc.date.accessioned | 2021-05-20T21:51:44Z | - |
dc.date.available | 2015-07-30 | |
dc.date.available | 2021-05-20T21:51:44Z | - |
dc.date.copyright | 2010-07-30 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-07-28 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/10707 | - |
dc.description.abstract | 本論文研究使用原子層沉積技術所成長之氧化鋅磊晶薄膜其晶體結構、光激發光以及電激發光之性質。以原子層沉積技術所成長之氧化鋅薄膜在高溫退火後其結晶方向為高度c-軸取向,且於穿透式電子顯微鏡(TEM)的觀察下並無明顯的貫穿式差排(threading dislocation)出現。而其發光性質良好,自發輻射(spontaneous emission)之主要發光波長為378nm的紫外光,缺陷發光強度約為紫外光強度之千分之一。光激發受激輻射(optically-pumped stimulated emission)之起始值(threshold)為33.3kW/cm2,且此起始值隨著鋁原子摻雜濃度的升高而逐漸降低,此現象可歸因於random lasing之產生,而此random lasing現象的發生及來源可藉由兩種不同摻雜模式之鋁摻雜氧化鋅薄膜其所表現出不同的光學性質來佐證。
為研究其電激發光之性質,本研究將氧化鋅磊晶薄膜以原子層沉積技術成長於p型氮化鎵上以製作n-ZnO/p-GaN異質接面發光二極體(LED)。此發光二極體於順向偏壓下發出391nm之紫外光及425nm之藍光,其中391nm之紫外光為氧化鋅薄膜所產生,而425nm之藍光則源自於p型氮化鎵。另外本研究亦發現,若於此發光二極體背面鍍上金屬反射層,則氧化鋅薄膜所發之紫外光隨著電流的上升而呈現出非線性上升的現象,可歸因為amplified spontaneous emission的發生。 另一方面,將此n-ZnO/p-GaN異質接面發光二極體操作在逆向偏壓時可觀察到白光的產生。此白光為波長分別為430nm的藍光與550nm的黃光混合而成,其於色域圖上之座標為(0.31,0.36)與理想之白光座標(0.33,0.33)十分接近。另外若於氧化鋅薄膜中摻雜鋁原子,可在此n-ZnO/p-GaN異質接面發光二極體於逆向偏壓操作下觀察到波長範圍為370nm-396nm之紫外光,此紫外光是由p型氮化鎵所產生,其發光波長隨著空乏區電場強度的增加而紅位移,其成因為excitonic Franz-Keldysh所導致。 由上述結果可以得知,以原子層沉積技術所成長之氧化鋅磊晶薄膜具有良好的晶體品質及光學性質,可以應用於下一世代的高效率發光元件。 | zh_TW |
dc.description.abstract | High-quality ZnO epilayers were grown on the (0002) sapphire substrate by atomic layer deposition (ALD) and treated by post-deposition thermal annealing. The highly c-axis orientated, well crystallized ZnO epilayers and dominant ultraviolet (UV) near-band-edge emission with negligible defect-related bands were manifested by the X-ray diffraction pattern, transmission electron microscopy images and photoluminescence measurement. A low-threshold (33.3 kW/cm2) optically-pumped stimulated emission was observed in the ZnO epilayers. It was found that the threshold gradually decreased with the increase in the Al doping concentration in the ZnO films. The onset of random lasing was proposed to be the reason of the reduction in the threshold of stimulated emission.
The high-quality ZnO epilayers were grown by ALD on the p-type GaN and treated by rapid thermal annealing to form the n-ZnO/p-GaN heterojunction light-emitting diodes (LEDs). The LEDs exhibited a competition between the electroluminescnce (EL) from the n-ZnO (λ=391 nm) and p-GaN (λ=425 nm). On the other hand, the effect of external feedback on the UV EL from n-ZnO/p-GaN heterojunction LEDs was also studied. The super-linear increase in the UV EL intensity from ZnO with the injection current was observed, attributed to the occurrence of amplified spontaneous emisson in the ZnO epilayer. White-light EL from the n-ZnO/p-GaN hetrojunction LEDs operated at reverse breakdown bias was also reported. The EL spectrum was composed of the blue light at 430 nm and broad yellow band around 550 nm. The chromaticity coordinate of the EL spectrum was estimated to be (0.31,0.36), very close to (0.33,0.33) of the standard white light. Significant ultraviolet (UV) electroluminescence (EL) coupled with a red shift from n-ZnO/p-GaN hetrojunction LEDs diodes was observed under the reverse breakdown bias. The reverse breakdown is attributed to the type II band alignment with large band offsets between n-ZnO and p-GaN heterojunction, which facilitates electron tunneling from the valence band in p-GaN to the conduction band in n-ZnO.Theoretical calculations were carried out to fit the EL spectra, indicating that the excitonic Franz-Keldysh effect under a large electric field in the depletion region of p-GaN is responsible for the red shift in the UV EL spectra. The crystal structures and optical properties of ZnO epilayers and the n-ZnO/p-GaN hetrojunction LEDs grown by ALD were studied in this thesis. The results indicate that the ALD technique is a very promising approach to the growth of high-quality ZnO epilayers for the next-generation UV photonic devices. | en |
dc.description.provenance | Made available in DSpace on 2021-05-20T21:51:44Z (GMT). No. of bitstreams: 1 ntu-99-F94527061-1.pdf: 8860275 bytes, checksum: 8f31aa4ae4528846a5b75f6fd936705b (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | Chapter 1 1
Introduction 1 1.1 Motivation 1 1.2 Outline of this thesis 2 1.3 Characteristics of ZnO 4 1.4 Franz-Keldysh Effect 8 Reference 12 Chapter 2 15 Structure of ZnO epilayer grown by atomic layer deposition on the sapphire substrate 15 2.1 Introduction 15 2.2 Sample preparation 16 2.3 Experimental procedure 17 2.4 Results and Discussion 17 2.4.1 X-ray diffraction 17 2.4.2 Cross-sectional TEM 19 2.4.3 High resolution TEM 19 2.4.4 Optical property 21 2.5 Summary 23 Reference 24 Chapter 3 27 Stimulated Emission in ZnO and ZnO:Al Thin Films Grown by Atomic Layer Deposition 27 3.1 Introduction 27 3.2 Stimulated emission in undoped ZnO thin film 28 3.2.1 Sample preparation 28 3.2.2 Experiment procedure 29 3.2.3 Crystal quality 29 3.2.4 Stimulated emission 31 3.2.5 Al2O3 surface passivation 33 3.2.6 Gain spectrum 35 3.2.7 Al doping effect 36 3.3 Reduction in stimulated emission threshold of ZnO:Al 38 3.3.1 Sample preparation 38 3.3.2 Crystal quality 38 3.3.3 Reduction of the stimulated emission 39 3.4 Random lasing in heavily doped 6% ZnO:Al thin film 44 3.4.1 Sample configuration 44 3.4.2 Crystal quality 44 3.4.3 Stimulated emission with random lasing 45 3.4.4 Examining of random lasing 49 3.5 Summary 49 Chapter 4 53 Ultraviolet Electroluminescence of n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Forward Bias 53 4.1 Introduction 53 4.2 UV electroluminescence of n-ZnO/p-GaN heterojunction LED 54 4.2.1 Sample preparation 54 4.2.2 Experimental setup and procedure 55 4.2.3 Crystal quality of the ZnO film on p-GaN 56 4.2.4 Optical property of n-ZnO and p-GaN 61 4.2.5 Electroluminescence 62 4.2.6 Interfacial layer 63 4.2.7 Confirm the interfacial layer by C-V method 66 4.2.8 Competition mechanism 69 4.3 Electroluminescence of n-ZnO/p-GaN heterojunction LED with aluminum back reflector 71 4.3.1 Sample preparation 71 4.3.2 Electroluminescence 71 4.3.3 Super-linearly growth of EL intensity 73 4.4 Summary 76 Appendix 4A: four-level laser system 78 Reference 80 Chapter 5 83 White Light and Avalanche UV Electroluminescence of n-ZnO /p-GaN Hetrojunction Light-Emitting Diodes at Reverse Breakdown Bias 83 5.1 Introduction 83 5.2 White-light Electroluminescence 84 5.2.1 Sample preparation 84 5.2.2 Current vs. Voltage (I-V) characteristics 86 5.2.3 Optical and crystal quality 87 5.2.4 White light electroluminescence 88 5.2.5 Discussion 88 5.2.6 White light in CIE chromaticity coordinate 94 5.3 Excitonic Franz-Keldysh effect in ultraviolet electro- luminescence from n-ZnO:Al/p-GaN:Mg heterojunction light-emitting diodes operated at reverse breakdown bias 94 5.3.1 Sample preparation 94 5.3.2 Current vs. Voltage (I-V) characteristics 96 5.3.3 Photoluminescence of n-ZnO:Al and the p-GaN films 98 5.3.4 Breakdown electroluminescence 98 5.3.5 Discussion 101 5.4 Summary 104 Appendix 5A 106 Appendix 5B 113 Reference 117 Chapter 6 120 Conclusion 120 | |
dc.language.iso | en | |
dc.title | 利用原子氣相沉積技術成長氧化鋅磊晶薄膜與 n型氧化鋅/ p型氮化鎵異質介面發光二極體之研究 | zh_TW |
dc.title | Characteristics of ZnO epilayers and n-ZnO/p-GaN hetrojunction light-emitting diodes grown by atomic layer deposition | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 林浩雄,楊哲人,林瑞明,何志浩,陳建彰 | |
dc.subject.keyword | 原子層沉積,氧化鋅,貫穿式差排,受激輻射,發光二極體,紅位移, | zh_TW |
dc.subject.keyword | ALD,ZnO,threading dislocation,stimulated emission,light emitting diode,red-shift., | en |
dc.relation.page | 123 | |
dc.rights.note | 同意授權(全球公開) | |
dc.date.accepted | 2010-07-30 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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