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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李俊興 | zh_TW |
| dc.contributor.advisor | Chun-Hsing Li | en |
| dc.contributor.author | 陳品萱 | zh_TW |
| dc.contributor.author | Pin-Syuan Chen | en |
| dc.date.accessioned | 2026-08-24T16:26:20Z | - |
| dc.date.available | 2026-08-25 | - |
| dc.date.copyright | 2026-08-24 | - |
| dc.date.issued | 2026 | - |
| dc.date.submitted | 2026-08-17 12:13:36 | - |
| dc.identifier.citation | REFERENCE
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Huang, "60-GHz 5-bit Phase Shifter With Integrated VGA Phase-Error Compensation," in IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 3, pp. 1224-1235, March 2013 [6] Dong-Woo Kang, Hui Dong Lee, Chung-Hwan Kim and Songcheol Hong, "Ku-band MMIC phase shifter using a parallel resonator with 0.18-/spl mu/m CMOS technology," in IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 1, pp. 294-301, Jan. 2006 [7] M. Sayginer and G. M. Rebeiz, "A W-Band LNA/Phase Shifter With 5-dB NF and 24-mW Power Consumption in 32-nm CMOS SOI," in IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 4, pp. 1973-1982, April 2018 [8] H. -S. Lee and B. -W. Min, "W-Band CMOS 4-Bit Phase Shifter for High Power and Phase Compression Points," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 62, no. 1, pp. 1-5, Jan. 2015 [9] G. -S. Shin et al., "Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications," in IEEE Microwave and Wireless Components Letters, vol. 26, no. 1, pp. 37-39, Jan. 2016 [10] M. Jung and B. -W. Min, "A Compact Ka-Band 4-bit Phase Shifter With Low Group Delay Deviation," in IEEE Microwave and Wireless Components Letters, vol. 30, no. 4, pp. 414-416, April 2020. [11] F. Golcuk, T. Kanar and G. M. Rebeiz, "A 90 - 100-GHz 4 x 4 SiGe BiCMOS Polarimetric Transmit/Receive Phased Array With Simultaneous Receive-Beams Capabilities," in IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 8, pp. 3099-3114, Aug. 2013 [12] H. Li et al., "W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication," in IEEE Journal of Solid-State Circuits, vol. 57, no. 9, pp. 2685-2701, Sept. 2022 [13] H. Li, J. Chen, D. Hou and W. Hong, "A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 10, pp. 1839-1843, Oct. 2020 [14] B. Wang, H. Gao, M. K. Matters-Kammerer and P. G. M. Baltus, "A 60 GHz 360° Phase Shifter with 2.7° Phase Resolution and 1.4° RMS Phase Error in a 40-nm CMOS Technology," 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Philadelphia, PA, USA, 2018, pp. 144-147 [15] J. S. Park and H. Wang, "A Transformer-Based Poly-Phase Network for Ultra-Broadband Quadrature Signal Generation," in IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 12, pp. 4444-4457, Dec. 2015 [16] R. C. Frye, S. Kapur and R. C. Melville, "A 2-GHz quadrature hybrid implemented in CMOS technology," in IEEE Journal of Solid-State Circuits, vol. 38, no. 3, pp. 550-555, March 2003 [17] T. Wu et al., "A 60-GHz Variable Gain Phase Shifter With 14.8-dB Gain Tuning Range and 6-Bit Phase Resolution Across −25 °C–110 °C," in IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 4, pp. 2371-2385, April 2021 [18] T. -W. Li and H. Wang, "A Millimeter-Wave Fully Integrated Passive Reflection-Type Phase Shifter With Transformer-Based Multi-Resonance Loads for 360° Phase Shifting," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 65, no. 4, pp. 1406-1419, April 2018 [19] M. Elkholy, S. Shakib, J. Dunworth, V. Aparin and K. Entesari, "Low-Loss Highly Linear Integrated Passive Phase Shifters for 5G Front Ends on Bulk CMOS," in IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 10, pp. 4563-4575, Oct. 2018 [20] C. -H. Li, Y. -L. Liu and C. -N. Kuo, "A 0.6-V 0.33-mW 5.5-GHz Receiver Front-End Using Resonator Coupling Technique," in IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 6, pp. 1629-1638, June 2011 [21] C. -H. Li, C. -N. Kuo and M. -C. Kuo, "A 1.2-V 5.2-mW 20–30-GHz Wideband Receiver Front-End in 0.18- μm CMOS," in IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 11, pp. 3502-3512, Nov. 2012 [22] M. Uzunkol and G. M. Rebeiz, "140–220 GHz SPST and SPDT Switches in 45 nm CMOS SOI," in IEEE Microwave and Wireless Components Letters, vol. 22, no. 8, pp. 412-414, Aug. 2012 [23] P. -C. Chiu and C. -H. Li, ”A Ka-Band 0-mW High-Resolution 360° CMOS Phase Shifter Utilizing Multifunctional Inductively-Coupled Resonators for 5G Applications” in Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan [24] H. Jeong, H. D. Lee, B. Park, S. Jang, S. Kong and C. Park, "Three-Stacked CMOS Power Amplifier to Increase Output Power With Stability Enhancement for mm-Wave Beamforming Systems," in IEEE Transactions on Microwave Theory and Techniques, vol. 71, no. 6, pp. 2450-2464, June 2023 [25] S. Li, H. Jia, W. Zheng, G. Feng, Y. Zou and Y. Wang, "A High-Efficiency 28GHz Doherty Power Amplifier with Peak PAE of 37.3% in 40nm CMOS," 2022 IEEE MTT-S International Wireless Symposium (IWS), Harbin, China, 2022 | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/104189 | - |
| dc.description.abstract | 本論文所沿用之開關式相移器架構,加上中和式功率放大器達成無條件穩定,並且利用差動式拜倫以較低損耗的方式分開訊號並且分別以兩路相位陣列發射訊號。隨著5G毫米波通訊技術的快速發展,為滿足高速率、低延遲與大容量的無線傳輸需求,相控陣列天線(phased array)已成為實現波束賦形(beamforming)與空間多工的關鍵技術。在此架構中,相位控制器與功率放大器的整合設計直接影響整體系統的效能、功耗與硬體複雜度。使用開關式相移器的優勢就是可以利用較簡易的操作方式實現相移器的功能,其優點在架構簡介可以看到其方均根相位差以及增益表現優異之外,另一方面,為了克服毫米波下高路徑損耗的挑戰,功率放大器的設計需同時兼顧高增益與低功耗。將功率放大器與相位移器緊密整合,可降低路徑插損並減少匹配電路帶來的面積與能耗開銷,對高整合度相控陣列晶片特別重要。因此,在每個天線路徑中整合雙路相位移器與功率放大器,不僅能提供精確、可調的相位控制能力,亦有助於提升系統效能與陣列可擴展性。此方向的研究已成為實現高解析度波束控制與節能相控陣列晶片設計的重要策略 | zh_TW |
| dc.description.abstract | This work adopts a switch-type phase-shifter (STPS) architecture and pairs it with a neutralized power amplifier (PA) to achieve unconditional stability. A differential balun is used to split the signal with low loss and to feed two phased-array transmit paths. As 5G mmWave communications technology advance, the demand for high data rates, low latency, and large capacity has made phased-array antennas a key technology for beamforming. In this architecture, the co-design and integration of the phase-control network and the PA directly impact overall performance, power consumption, and hardware complexity.
The switch-based phase shifter offers simple control and, in our design, achieves low RMS phase error while maintaining competitive overall gain when combined with the power amplifier (PA). To overcome the high path loss in mmWave links, the PA must provide high gain and high output power while maintaining high efficiency. Integrating the first driver-amplifier (DA) with a transformer-based phase shifter (TFPS) reduces insertion loss and matching-network (MN) area—a key advantage for highly integrated phased-array chips. Consequently, integrating a phase shifter and a PA in each path not only enables accurate, tunable phase control but also improves system performance and array scalability. This approach is an effective strategy for achieving high-resolution phase control and energy-efficient phased-array ICs. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2026-08-24T16:26:20Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2026-08-24T16:26:20Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vi LIST OF TABLES viii Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 1 1.3 Thesis Organization 3 Chapter 2 A 28-GHz 360° Phase-Tunable Power Amplifier for Phased-Array Applications 4 2.1 Proposed mm-wave phased-array transmitter front-end architecture 4 2.2 Switched-type Phase Shifter 7 2.2.1 Theory and design of STPS 7 2.2.2 STPS Simulation Results 12 2.3 Transformer-type Phase Shifter 14 2.3.1 General Considerations 14 2.3.2 STPS Design and Simulation Results 15 2.4 Neutralized Differential Power Amplifier 18 2.4.1 General Considerations 18 2.4.2 Neutralized Differential PA/DA Design 18 2.4.3 Inter-stage Matching 21 2.4.4 Single-path Transmitter Stability Verification and Simulation Results 21 2.5 Overall Circuit Simulation Results 25 2.5.1 Input Balun Design 25 2.6 Layout 27 Chapter 3 Measurement Results 30 Chapter 4 Conclusion and Future Work 31 4.1 Conclusion 31 4.2 Future Work 32 REFERENCE 34 | - |
| dc.language.iso | en | - |
| dc.subject | 5G | - |
| dc.subject | 毫米波 | - |
| dc.subject | 互補式金屬氧化物半導體製程 | - |
| dc.subject | 開關式相移器 | - |
| dc.subject | 中和式功率放大器 | - |
| dc.subject | 360 度可調相移 | - |
| dc.subject | CMOS process | - |
| dc.subject | 5G | - |
| dc.subject | switch-based phase shifter | - |
| dc.subject | neutralized power amplifier | - |
| dc.subject | 360° tunable phase shifter | - |
| dc.subject | millimeter-wave (mmWave) | - |
| dc.title | 28-GHz 360°相位可調功率放大器 | zh_TW |
| dc.title | 28-GHz 360° Phase-Tunable Power Amplifier | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 114-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 吳宗澤;劉怡君 | zh_TW |
| dc.contributor.oralexamcommittee | Zong-Ze Wu;Yi-Jun Liu | en |
| dc.subject.keyword | 5G; 毫米波; 互補式金屬氧化物半導體製程; 開關式相移器; 中和式功率放大器; 360 度可調相移 | zh_TW |
| dc.subject.keyword | CMOS process; 5G; switch-based phase shifter; neutralized power amplifier; 360° tunable phase shifter; millimeter-wave (mmWave) | en |
| dc.relation.page | 37 | - |
| dc.identifier.doi | 10.6342/NTU202603519 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2026-08-19 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 電信工程學研究所 | - |
| dc.date.embargo-lift | 2026-08-25 | - |
| 顯示於系所單位: | 電信工程學研究所 | |
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| ntu-114-2.pdf | 3.14 MB | Adobe PDF | 檢視/開啟 |
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