請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/103375完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳敏璋 | zh_TW |
| dc.contributor.advisor | Miin-Jang Chen | en |
| dc.contributor.author | 呂席維 | zh_TW |
| dc.contributor.author | Xi-Wei Lu | en |
| dc.date.accessioned | 2026-08-11T16:14:34Z | - |
| dc.date.available | 2026-08-12 | - |
| dc.date.copyright | 2026-08-11 | - |
| dc.date.issued | 2026 | - |
| dc.date.submitted | 2026-07-22 00:00:00 | - |
| dc.identifier.citation | [1] J. Dubowik. Shape anisotropy of magnetic heterostructures. Phys. Rev. B, 54:1088 1091, Jul 1996.
[2] C.-F.PaiandD.D.Tang. MagnetismandMagneticMaterials,chapter2, pages19–65. John Wiley & Sons, Ltd, 2020. [3] Patrick Bruno. Tight-binding approach to the orbital magnetic moment and mag netocrystalline anisotropy of transition-metal monolayers. Physical Review B, 39(1):865, 1989. [4] T Yang, A Suzuki, T Matsumoto, and R Yamamoto. Perpendicular magnetic anisotropy in cogd/pd multilayered films. physica status solidi (a), 161(1):257–264, 1997. [5] MTJohnson,PJHBloemen,FJADenBroeder,andJJDeVries. Magneticanisotropy in metallic multilayers. Reports on Progress in Physics, 59(11):1409–1458, 1996. [6] CMHurd. Varieties of magnetic order in solids. Contemporary Physics, 23(5):469 493, 1982. [7] AnniCao,XueyingZhang,BertKoopmans,ShouzhongPeng,YuZhang,ZiluWang, Shaohua Yan, Hongxin Yang, and Weisheng Zhao. Tuning the dzyaloshinskii moriya interaction in pt/ co/ mgo heterostructures through the mgo thickness. Nanoscale, 10(25):12062–12067, 2018. [8] Dong-Soo Han, Kyujoon Lee, Jan-Philipp Hanke, Yuriy Mokrousov, Kyoung-Whan Kim, Woosuk Yoo, Youri LW Van Hees, Tae-Wan Kim, Reinoud Lavrijsen, Chun Yeol You, et al. Long-range chiral exchange interaction in synthetic antiferromag nets. Nature materials, 18(7):703–708, 2019. [9] Phunvira Chongthanaphisut, Seul-Ki Bac, Seonghoon Choi, Kyung Jae Lee, Jihoon Chang, SuhoChoi, SanghoonLee, MosesNnaji, XLiu, MDobrowolska, etal. Inter layer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy. Scientific reports, 9(1):4740, 2019. [10] SSP Parkin and D Mauri. Spin engineering: Direct determination of the ruderman kittel-kasuya-yosida far-field range function in ruthenium. Physical Review B, 44(13):7131, 1991. [11] Stuart SP Parkin. Systematic variation of the strength and oscillation period of indirect magnetic exchange coupling through the 3d, 4d, and 5d transition metals. Physical Review Letters, 67(25):3598, 1991. [12] Igor Dzyaloshinsky. A thermodynamic theory of “weak＂ferromagnetism of anti ferromagnetics. Journal of physics and chemistry of solids, 4(4):241–255, 1958. [13] Tôru Moriya. Anisotropic superexchange interaction and weak ferromagnetism. Physical review, 120(1):91, 1960. [14] Albert Fert, Vincent Cros, and Joao Sampaio. Skyrmions on the track. Nature nanotechnology, 8(3):152–156, 2013. [15] Satoru Emori, Uwe Bauer, Sung-Min Ahn, Eduardo Martinez, and Geoffrey SD Beach. Current-driven dynamics of chiral ferromagnetic domain walls. Nature materials, 12(7):611–616, 2013. [16] Stuart Parkin and See-Hun Yang. Memory onthe racetrack. Nature nanotechnology, 10(3):195–198, 2015. [17] A. Belabbes, G. Bihlmayer, F. Bechstedt, S. Blügel, and A. Manchon. Hund’s rule-driven dzyaloshinskii-moriya interaction at 3d−5d interfaces. Phys. Rev. Lett., 117:247202, Dec 2016. [18] Priyamvada Jadaun, Leonard F Register, and Sanjay K Banerjee. The microscopic origin of dmi in magnetic bilayers and prediction of giant dmi in new bilayers. npj Computational Materials, 6(1):88, 2020. [19] Elena Y. Vedmedenko, Patricia Riego, Jon Ander Arregi, and Andreas Berger. In terlayer dzyaloshinskii-moriya interactions. Phys. Rev. Lett., 122:257202, Jun 2019. [20] Amalio Fernández-Pacheco, Elena Vedmedenko, Fanny Ummelen, Rhodri Mansell, Dorothée Petit, and Russell P Cowburn. Symmetry-breaking interlayer dzyaloshinskii–moriya interactions in synthetic antiferromagnets. Nature materials, 18(7):679–684, 2019. [21] Can Onur Avci, Charles-Henri Lambert, Giacomo Sala, and Pietro Gambardella. Chiral coupling between magnetic layers with orthogonal magnetization. Phys. Rev. Lett., 127:167202, Oct 2021. [22] Shixuan Liang, Ruyi Chen, Qirui Cui, Yongjian Zhou, Feng Pan, Hongxin Yang, and Cheng Song. Ruderman–kittel–kasuya–yosida-type interlayer dzyaloshinskii moriya interaction in synthetic magnets. Nano Letters, 23(18):8690–8696, 2023. [23] EMREDemiroglu, Kaan Hancioglu, Ilhan Yavuz, Can Onur Avci, and Caner Deger. Oscillatory behavior of interlayer dzyaloshinskii-moriya interaction by spacer thick ness variation. Physical Review B, 109(14):144422, 2024. [24] Yu-Hao Huang, Xi-Wei Lu, Jui-Hsu Han, Chih-Chen Peng, and Chi-Feng Pai. Experimental confirmation of ruderman-kittel-kasuya-yosida-type interlayer dzyaloshinskii-moriya interaction across ru spacers. Physical Review Materials, 9(5):L051401, 2025. [25] Xupeng Zhao and Jianhua Zhao. Interlayer dzyaloshinskii-moriya interaction in spintronics. npj Spintronics, 3(1):25, 2025. [26] J.C. Slonczewski. Current-driven excitation of magnetic multilayers. Journal of Magnetism and Magnetic Materials, 159(1):L1–L7, 1996. [27] LucBerger. Emission of spin waves by a magnetic multilayer traversed by a current. Physical Review B, 54(13):9353, 1996. [28] Ioan Mihai Miron, Kevin Garello, Gilles Gaudin, Pierre-Jean Zermatten, Marius V Costache, Stéphane Auffret, Sébastien Bandiera, Bernard Rodmacq, Alain Schuhl, and Pietro Gambardella. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection. Nature, 476(7359):189–193, 2011. [29] Luqiao Liu, Chi-Feng Pai, Y Li, HW Tseng, DC Ralph, and RA Buhrman. Spin torque switching with the giant spin hall effect of tantalum. Science, 336(6081):555 558, 2012. [30] Chi-Feng Pai, Luqiao Liu, Y Li, HW Tseng, DC Ralph, and RA Buhrman. Spin transfer torque devices utilizing the giant spin hall effect oftungsten. AppliedPhysics Letters, 101(12), 2012. [31] C.-F. Pai andD.D.Tang. SpinCurrentandSpinDynamics, chapter6, pages105–149. John Wiley & Sons, Ltd, 2020. [32] VD Nguyen, S Rao, K Wostyn, and S Couet. Recent progress in spin-orbit torque magnetic random-access memory. npj Spintronics, 2(1):48, 2024. [33] Shunsuke Fukami, T Anekawa, C Zhang, and H Ohno. A spin–orbit torque switch ing scheme with collinear magnetic easy axis and current configuration. nature nanotechnology, 11(7):621–625, 2016. [34] Chi-Feng Pai, Maxwell Mann, Aik Jun Tan, and Geoffrey SD Beach. Determi nation of spin torque efficiencies in heterostructures with perpendicular magnetic anisotropy. Physical Review B, 93(14):144409, 2016. [35] Guoqiang Yu, Pramey Upadhyaya, Yabin Fan, Juan G Alzate, Wanjun Jiang, Kin L Wong, So Takei, Scott A Bender, Li-Te Chang, Ying Jiang, et al. Switching of per pendicular magnetization by spin–orbit torques in the absence of external magnetic fields. Nature nanotechnology, 9(7):548–554, 2014. [36] Chen-Yu Hu, Wei-De Chen, Yan-Ting Liu, Chao-Chung Huang, and Chi-Feng Pai. The central role of tilted anisotropy for field-free spin–orbit torque switching of per pendicular magnetization. NPG Asia Materials, 16(1):1, 2024. [37] Yu-Hao Huang, Chao-Chung Huang, Wei-Bang Liao, Tian-Yue Chen, and Chi-Feng Pai. Growth-dependent interlayer chiral exchange and field-free switching. Physical Review Applied, 18(3):034046, 2022. [38] Tzu-ChuanHsin, Chun-YiLin, Po-ChuanWang, ChunYang, andChi-FengPai. All electrical control of spin synapses for neuromorphic computing: Bridging multi state memory with quantization for efficient neural networks. Advanced Science, 12(22):2417735, 2025. [39] Lei Wang, Xuesong Zhou, Runzi Hao, and Tai Min. Low-energy picosecond mag netic switching for synthetic ferrimagnetic free layer utilizing the electric-field-tuned rkky effect. IEEE Transactions on Magnetics, 57(8):1–7, 2021. [40] Keito Kobayashi, Keisuke Hayakawa, Junta Igarashi, William A Borders, Shun Kanai, Hideo Ohno, and Shunsuke Fukami. External-field-robust stochastic mag netic tunnel junctions using a free layer with synthetic antiferromagnetic coupling. Physical Review Applied, 18(5):054085, 2022. [41] Jaehun Cho and June-Seo Kim. Introduction of rkky-pmtj-based ultrafast magnetic sensor architecture and magnetic multilayer optimization. Sensors, 25(21), 2025. [42] Hongxin Yang, Jinghua Liang, and Qirui Cui. First-principles calculations for dzyaloshinskii–moriya interaction. Nature Reviews Physics, 5(1):43–61, 2023. [43] Michaela Kuepferling, Arianna Casiraghi, Gabriel Soares, Gianfranco Durin, Felipe Garcia-Sanchez, LiuChen, ChristianHBack, ChristopherHMarrows, SilviaTacchi, and Giovanni Carlotti. Measuring interfacial dzyaloshinskii-moriya interaction in ultrathin magnetic films. Reviews of Modern Physics, 95(1):015003, 2023. [44] Tim Matthies, Levente Rózsa, László Szunyogh, Roland Wiesendanger, and Elena Y Vedmedenko. Interlayer and interfacial dzyaloshinskii-moriya interac tion in magnetic trilayers: First-principles calculations. Physical Review Research, 6(4):043158, 2024. [45] Hao Wu, John Nance, Seyed Armin Razavi, David Lujan, Bingqian Dai, Yuxiang Liu, HaoranHe,BaoshanCui,DiWu,KinWong,etal. Chiralsymmetrybreakingfor deterministic switching of perpendicular magnetization by spin–orbit torque. Nano letters, 21(1):515–521, 2020. [46] Yu-Hao Huang, Jui-Hsu Han, Wei-Bang Liao, Chen-Yu Hu, Yan-Ting Liu, and Chi Feng Pai. Tailoring interlayer chiral exchange by azimuthal symmetry engineering. Nano Letters, 24(2):649–656, 2024. [47] Zhiqiang Cao, Shaoxin Li, Yuanhao Pan, Junbiao Zhao, Shucheng Ye, Xuey ing Zhang, and Weisheng Zhao. Characterization of magnetic thin films and spintronic devices using magneto-optic kerr microscopy. Advanced Devices & Instrumentation, 5:0060, 2024. [48] Hongming Weng, Xi Dai, and Zhong Fang. From anomalous hall effect to the quan tum anomalous hall effect. arXiv preprint arXiv:1509.05507, 2015. [49] Seok Jin Yun, Kyung-Jin Lee, and Sang Ho Lim. Critical switching current den sity induced by spin hall effect in magnetic structures with first-and second-order perpendicular magnetic anisotropy. Scientific reports, 7(1):15314, 2017. [50] Aleksandr Kurenkov, Samik DuttaGupta, Chaoliang Zhang, Shunsuke Fukami, Yoshihiko Horio, and Hideo Ohno. Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spin–orbit torque switching. Advanced Materials, 31(23):1900636, 2019. [51] Jing Zhou, Tieyang Zhao, Xinyu Shu, Liang Liu, Weinan Lin, Shaohai Chen, Shu Shi, Xiaobing Yan, Xiaogang Liu, and Jingsheng Chen. Spin–orbit torque induced domain nucleation for neuromorphic computing. Advanced Materials, 33(36):2103672, 2021. [52] Jon Ander Arregi, Patricia Riego, Andreas Berger, and Elena Y Vedmedenko. Large interlayer dzyaloshinskii-moriya interactions across ag-layers. Communications, 14(1):6927, 2023. Nature [53] Guocai Wang, Lei Guo, Hua Su, Huaiwu Zhang, and Xiaoli Tang. Asymmet ric magnetization switching and all-electric field-free programmable spin logic en abled by the interlayer dzyaloshinskii–moriya interaction. ACS Applied Materials &Interfaces, 17(18):27478–27486, 2025. [54] Xi-Wei Lu and Chi-Feng Pai. Direct linking of interfacial and interlayer chiral ex change coupling observed through interface tuning. Applied Physics Letters, 127(8), 2025. [55] Monika Arora, René Hübner, Dieter Süss, Bret Heinrich, and Erol Girt. Origin of perpendicular magnetic anisotropy in co/ni multilayers. Physical Review B, 96(2):024401, 2017. [56] HongxinYang,AndréThiaville, Stanislas Rohart, Albert Fert, and Mairbek Chshiev. Anatomy of dzyaloshinskii-moriya interaction at co/pt interfaces. Physical review letters, 115(26):267210, 2015. [57] Qihan Zhang, Jinghua Liang, Kaiqi Bi, Le Zhao, He Bai, Qirui Cui, Heng-An Zhou, HaoBai, Hongmei Feng, Wenjie Song, et al. Quantifying the dzyaloshinskii-moriya interaction induced by the bulk magnetic asymmetry. Physical Review Letters, 128(16):167202, 2022. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/103375 | - |
| dc.description.abstract | 近年來，自旋電子學的相關研究，已經慢慢從線性的磁性行為延伸到非線性的作用。其中，尤其是層間Dzyaloshinskii–Moriyainteraction (IL-DMI)，因為其在鐵磁層間控制長距離手性耦合的能力而備受矚目。然而，這種作用一直缺少了微觀尺度下的解釋，特別是與已經有較完整研究歷史的InterfacialDMI(IF-DMI)相比。釐清IL-DMI與IF-DMI之間的關係對於控制對手性磁矩排列來說是至關重要的。
為此，我們藉由改變T型結構中由鈷,鎳與鉑組成的垂直排列(PMA)鐵磁層排列方式，展示了明確的IL-DMI極性反轉現象。這個磁性的極性反轉的過程是從鈷金屬主導轉變成鎳金屬主導。更透過控制與鉑接觸的金屬，來判斷這個 IL-DMI 的極性轉換是源自於鐵磁層與鉑的界面效應，而非鐵磁層厚度變化導致。 再者，我們也透過方正的無場翻轉，來驗證這個翻轉的極性是真的跟著IL-DMI 的機制走的。接著我們利用非常薄的鈷介入磁性薄膜與鉑金屬的中間層，發現了極為顯著的翻轉電流密度下降，從4.45×107A/cm2下降到1.39×107A/cm2。這些發現不僅凸顯了界面材料組合在調控磁性多層膜手性耦合中的重要性，並透過界面驅動的IL-DMI線性調控，展示一條通往低功耗自旋軌道力矩元件的可行途徑。 | zh_TW |
| dc.description.abstract | In recent years, spintronics research has evolved from collinear to noncollinear magnetism, stimulating growing interest in the interlayer Dzyaloshinskii–Moriya interaction (IL-DMI) as a mechanism for long-range chiral coupling between magnetic layers. Despite its importance, the microscopic origin remains unclear, particularly regarding the extensively studied interfacial DMI (IF-DMI). Establishing whether these two forms share a common physical origin is crucial for the unified control of chiral spin textures in engineered heterostructures.
Here, we demonstrate a clear polarity reversal of IL-DMI by tuning the ferromagnetic composition of the perpendicularly magnetized layer in a type-T structure consisting of Co/Ni and Pt. The polarity reversal coincides with a transition from a Co-dominated to a Ni-dominated interface. Control experiments further reveal that the IL-DMI direction is governed solely by the identity of the ferromagnetic layer directly interfaced with the Pt spacer, and is largely independent of the total ferromagnetic thickness. Furthermore, robust field-free switching is achieved, with the switching polarity directly determined by the IL-DMI sign. By engineering the interfacial configuration through ultrathin Co insertion, we achieve a substantial reduction in the switching current density, with JSOT decreasing from 4.45 × 107 A/cm2 to 1.39 × 107 A/cm2. These results establish interfacial composition as a key tuning parameter for chiral coupling in spintronic multilayers and provide a practical pathway toward energy-efficient spin–orbit torque devices enabled by interface-driven control of IL-DMI. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2026-08-11T16:14:34Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2026-08-11T16:14:34Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | Contents
Verification Letter from the Oral Examination Committee ......................i Acknowledgements .............................................................ii 摘要 .........................................................................iii Abstract .....................................................................iv Contents .....................................................................vi List of Figures ..............................................................ix List of Tables ...............................................................xv Chapter 1 Introduction .......................................................1 1.1 Magnetic Anisotropy ......................................................1 1.1.1 Shape Anisotropy .......................................................2 1.1.2 Magnetocrystalline Anisotropy (MCA) ....................................2 1.1.3 Perpendicular Magnetic Anisotropy ......................................4 1.2 Exchange Interaction .....................................................6 1.2.1 Ruderman–Kittel–Kasuya–Yosida (RKKY) Interaction ....................7 1.2.2 Dzyaloshinskii–Moriya Interaction (DMI) ...............................9 1.2.3 Interlayer DMI (IL-DMI) ...............................................11 1.3 Spin Dynamics ...........................................................13 1.3.1 Landau–Lifshitz–Gilbert (LLG) Equation ..............................13 1.3.2 From Spin-Transfer Torque (STT) to Spin–Orbit Torque (SOT)............14 1.4 Magnetoresistive Random-Access Memory (MRAM) ............................16 1.4.1 Types of SOT-MRAM .....................................................18 1.4.2 Field-Free Switching Approaches for Type-z SOT-MRAM ...................20 1.5 Motivation ..............................................................22 Chapter 2 Sample Fabrication ................................................24 2.1 Thin-Film Deposition ....................................................24 2.1.1 Magnetron Sputtering ..................................................24 2.1.2 Wedge Deposition ......................................................26 2.2 Hall-Bar Device Preparation ............................................ 27 2.2.1 Photolithography ......................................................27 2.2.2 Preparation Flow ......................................................28 Chapter 3 Measurement Techniques ............................................30 3.1 Structural Characterization .............................................30 3.1.1 X-Ray Diffraction (XRD) ...............................................30 3.2 Magnetic Characterization ...............................................31 3.2.1 Magneto-Optical Kerr Effect (MOKE) ....................................31 3.3 Electrical Transport Measurements .......................................33 3.3.1 Anomalous Hall Effect (AHE) ...........................................33 3.3.2 Loop-Shift Measurement ................................................34 3.3.3 Field-Free Switching ..................................................36 3.3.4 Multistate Switching Controlled by Pulse Number .......................38 Chapter 4 Results and Discussion ............................................40 4.1 Structure Tuning ........................................................40 4.1.1 Tilted (111) Texture Induced by Wedge Deposition of the Pt Layer ......43 4.1.2 Magnetic Uniformity of the Reference Sample ...........................44 4.1.3 Magnetic Properties of Interface-Engineered Structures ................46 4.2 Detection of IL-DMI .....................................................48 4.2.1 Quantitative Extraction of IL-DMI via Loop-Shift Measurements .........49 4.2.2 Thickness-Dependent IL-DMI in Interface-Engineered Structures .........51 4.2.3 Brief Conclusion ......................................................54 4.3 Field-Free Switching in IL-DMI Systems ..................................55 4.3.1 Angle-Dependent Field-Free Switching ..................................56 4.3.2 Ni-Thickness Dependence of the Switching Current Density ..............58 4.3.3 Intermediate Co-Thickness Dependence of the Switching Current Density 59 4.3.4 Thermally Activated Switching Behavior in IL-DMI Systems...............61 Chapter 5 Conclusion ....................................................... 63 References ..................................................................65 | - |
| dc.language.iso | en | - |
| dc.subject | 自旋電子學 | - |
| dc.subject | 反對稱作用 | - |
| dc.subject | 自旋軌道力矩 | - |
| dc.subject | 無外加磁場電流翻轉 | - |
| dc.subject | Spintronic | - |
| dc.subject | Dzyaloshinskii–MoriyaInteractions(DMI) | - |
| dc.subject | Spin-orbit torque | - |
| dc.subject | Current induced field-free switching | - |
| dc.title | 透過界面工程探討並實現界面與層間反對稱交互作用的連結與線性調控 | zh_TW |
| dc.title | Direct Linking and Linear Control of Interfacial and Interlayer Dzyaloshinskii–Moriya Interactions via Interface Engineering | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 114-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.coadvisor | 白奇峰 | zh_TW |
| dc.contributor.coadvisor | Chi-Feng Pai | en |
| dc.contributor.oralexamcommittee | 黃斯衍;曲丹茹 | zh_TW |
| dc.contributor.oralexamcommittee | Ssu-Yen Huang;Dan-Ru Qu | en |
| dc.subject.keyword | 自旋電子學; 反對稱作用; 自旋軌道力矩; 無外加磁場電流翻轉 | zh_TW |
| dc.subject.keyword | Spintronic; Dzyaloshinskii–MoriyaInteractions(DMI); Spin-orbit torque; Current induced field-free switching | en |
| dc.relation.page | 72 | - |
| dc.identifier.doi | 10.6342/NTU202601850 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2026-07-23 | - |
| dc.contributor.author-college | 重點科技研究學院 | - |
| dc.contributor.author-dept | 元件材料與異質整合學位學程 | - |
| dc.date.embargo-lift | 2026-08-12 | - |
| 顯示於系所單位： | 元件材料與異質整合學位學程 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-114-2.pdf | 4.85 MB | Adobe PDF | 檢視/開啟 |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。