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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 光電工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/101532
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor蘇國棟zh_TW
dc.contributor.advisorGuo-Dung Suen
dc.contributor.author黃顗瑄zh_TW
dc.contributor.authorYi-Hsuan Huangen
dc.date.accessioned2026-02-11T16:08:32Z-
dc.date.available2026-02-12-
dc.date.copyright2026-02-11-
dc.date.issued2026-
dc.date.submitted2026-01-29-
dc.identifier.citation[1] C. C. Chang, Y. M. Hsu, T. C. Chen, C. C. Ho, C. Te Chen, and P. T. Chen. A study on the biological detection chip through the use of pdms lens for the reinforcement of fluorescence receiving signal. Optik, 125(7):1846–1852, 2014.
[2] I. De, D. Johri, A. Srivastava, and C. Osburn. Impact of gate workfunction on device performance at the 50 nm technology node. Solid-State Electronics, 44:1077–1080, 2000.
[3] Y. Ding, Y. Gu, Q. Yang, Z. Yang, Y. Huang, Y. Weng, Y. Zhang, and S.-T. Wu. Breaking the in-coupling efficiency limit in waveguide-based ar displays with polarization volume gratings. Light: Science & Applications, 13(1):185, Aug 2024.
[4] J. Du, X. Zhao, J. Su, B. Li, X. Duan, T. Dong, H. Lin, Y. Ren, Y. Miao, and H. H. Radamson. Review of short-wavelength infrared flip-chip bump bonding process technology. Sensors, 25(1), 2025.
[5] P. Elenius and L. Levine. Comparing flip-chip and wire-bond interconnection technologies. Chip Scale Review, 4(6):81–87, 2000.
[6] K. Fan, K. Zheng, J. Lv, B. Zhao, Y. Zhao, Y. Chen, Y. Qin, Q. Wang, W. Wang, and J. Liang. Analysis of size-dependent optoelectronic properties of red algainp micro-leds. Opt. Express, 31(22):36293–36303, Oct 2023.83
[7] M. M. Ferdaus, M. M. Rashid, and M. A. Rahman. Design and fabrication of a simple cost effective spin coater for deposition of thin film. 2014.
[8] E.-L. Hsiang, Z. He, Y. Huang, F. Gou, Y.-F. Lan, and S.-T. Wu. Improving the power efficiency of micro-led displays with optimized led chip sizes. Crystals, 10(6), 2020.
[9] W. Huang, X. Miao, and Z. Liu. Investigations of sidewall passivation using the sol-gel method on the optoelectronic performance for blue ingan micro-leds. Micromachines, 14(3), 2023.
[10] G. A. Koulieris, K. Akşit, M. Stengel, R. K. Mantiuk, K. Mania, and C. Richardt. Near-eye display and tracking technologies for virtual and augmented reality. Computer Graphics Forum, 38(2):493–519, 2019.
[11] G. E. Mustoe. Uranium mineralization of fossil wood. Geosciences, 10(4):133, 2020.
[12] D. E. Newbury. Mistakes encountered during automatic peak identification in low beam energy x-ray microanalysis. Scanning, 29(4):137–151, Jul-Aug 2007.
[13] F. Olivier. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application. J. Lumin., 191:112–116, 2017.
[14] OYaniv Maydar. Flip chip vs. wire bonding technology.
[15] J. Piprek. Experts still divided over cause of GaN-LED efficiency droop.
[16] E. Schubert. Light-Emitting Diodes. Cambridge Univ. Press, Cambridge U.K., 2nd edition, 2006.
[17] E. F. SCHUBERT. Light-Emitting Diodes (2006). E. Fred Schubert, 2006. 84
[18] E. F. Schubert”. ”LIGHT-EMITTING DIODES 2nd edition”. ”Cambridge University Press”, 2006.
[19] SCHUBERT, E. Fred. Light-Emitting Diodes (2006). E. Fred Schubert, 2006.
[20] T.-C. Wan, P.-H. Tsai, H.-W. Lin, C.-C. Lin, D.-S. Wuu, H. Amano, T.-Y. Seong, and R.-H. Horng. Comparison of chip size effects of thin film gan-based μleds fabricated by plasma etching and ion implantation processing. Applied Surface Science Advances, 27:100776, 2025.
[21] S. Wu. Design,"Fabrication and Testing of Micro-pixel Array Sub-280 Nm Deep Uv Light Emitting Diodes. Diss., University of South Carolina, 2004.
[22] X. Wu, X. Zhu, S. Wang, X. Tang, T. Lang, V. Belyaev, A. Abduev, A. Kazak, C. Lin, Q. Yan, and J. Sun. Bump-fabrication technologies for micro-led display: A review. Materials, 18(8):1783, 2025.
[23] J. Xiong, E.-L. Hsiang, Z. He, T. Zhan, and S.-T. Wu. Augmented reality and virtual reality displays: emerging technologies and future perspectives. Light: Science & Applications, 10(1):216, Oct 2021.
[24] H. Yuge, H. En-Lin, M.-Y. Deng, and S.-T. Wu. Mini-led, micro-led and oled displays: present status and future perspectives. Light: Science Applications, 9, 2020.
[25] T. Zhan, K. Yin, J. Xiong, Z. He, and S.-T. Wu. Augmented reality and virtual reality displays: Perspectives and challenges. iScience, 23(8):101397, 2020
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/101532-
dc.description.abstract擴增實境(AR)是一種將數位元素即時疊加於現實環境中的技術,旨在強化物理世界並提供豐富的互動體驗。AR的核心價值在於透過提供額外的資訊和背景,顯著提升使用者在現實世界中的感知與效率。其應用範圍廣泛,從汽車導航指令的簡化提示,到複雜機械3D模型的現場可視化,跨足日常生活與專業領域。本質上,AR透過彌合數位與實體領域的鴻溝,正在徹底改變我們與世界互動的方式,成為在各行業創造更高效、更身臨其境體驗的關鍵工具。
我開發一款半透明顯示系統架構來解決傳統CMOS晶片背板多採用矽基板而導致不透光的問題,且為達到輕薄化與透明化。為了解決背板不透光的問題且兼具機械強度,我設計了兩種結構:第一是使用深反應離子蝕刻(Deep Reactive Ion Etching, DRIE)技術,並計算出背板元件穿透率70%;這樣能使中央區域保持光學通透,並降低人眼異物感。第二,先在矽基板上面做電路設計以及製程,再去切割成6*6mm和3*3mm的小尺寸矽片。這兩種prototype都會與自行設計並製作的Micro-LED做flip chip bonding,以提升整體光學穿透性。
在這裡,將使用半導體製程技術來完成Micro-LED顯示系統模組。分別設計並製作矽基板以及μ-LED,最後再將矽基板以及μ-LED做flip clip bonding,並證明此架構可以成功的完成 flip chip,並展示出以 μ-LED 在下的部分透明結構,並為此透明顯示器的雛形提供了有價值的參考,初步演示一種新穎的顯示系統模組。得到階段性成功,期待未來可以將此技術拓展至多種 AR/VR應用領域。
zh_TW
dc.description.abstractAugmented Reality (AR) is a technology that overlays digital elements onto the real-world environment in real-time, aiming to enhance the physical world and provide rich interactive experiences. AR's core value lies in significantly improving user perception and efficiency by providing supplementary information and context within the real world. Its applications are extensive, spanning from simplified cues for automotive navigation to the on-site visualization of complex mechanical 3D models, thus bridging everyday life and professional domains. Essentially, AR is revolutionizing how we interact with the world by bridging the gap between the digital and physical realms, making it a critical tool for creating more efficient and immersive experiences across various industries.
In response to the opaqueness issue inherent in traditional CMOS chip backplanes, which primarily utilize silicon substrates, I developed a semi-transparent display system architecture aimed at achieving both thinness and transparency. To overcome the backplane's opacity while maintaining mechanical strength, I designed two distinct structures. The first approach employs Deep Reactive Ion Etching (DRIE) technology, calculating the backplane component's transparency to be 70%. This design ensures the central area remains optically transmissive and reduces the foreign body sensation perceived by the human eye. The second approach involves fabricating the circuit design onto a full silicon substrate first, which is then diced into small slices measuring 6*6mm and 3*3mm. Both prototypes will undergo flip-chip bonding with a self-designed and fabricated Micro-LED to enhance overall optical transparency.
Herein, semiconductor fabrication technology is utilized to complete the Micro-LED display system module. This involves separately designing and fabricating the silicon substrate and the μ-LED, followed by their final flip-chip bonding. We successfully demonstrate the feasibility of this flip-chip architecture and present the semi-transparent structure with the μ-LED array positioned on the bottom. This achievement offers a valuable reference for the prototype of such a transparent display and preliminarily demonstrates a novel display system module. Having achieved this staged success, we anticipate expanding this technology into various AR/VR application fields in the future.
en
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dc.description.tableofcontents致謝 i
摘要 iii
Abstract v
目次 vii
圖次 xi
表次 xv
第一章 Introduction 1
1.1 Augmented Reality Displays . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Representative AR System Architectures . . . . . . . . . . . . . . . . . 3
1.3 Microdisplays for AR Applications . . . . . . . . . . . . . . . . . . . . 4
1.4 IC Packaging Technology . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.5 Bump selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.6 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
第二章 Basic Theory 11
2.1 The basic principle of Light Emitting Diodes . . . . . . . . . . . . . 11
2.2 LED I-V Curve Characteristic . . . . . . . . . . . . . . . . . . . . . 13
2.3 LED L-I Curve Characteristic . . . . . . . . . . . . . . . . . . . . . 16
2.4 LED E-L Curve Characteristic . . . . . . . . . . . . . . . . . . . . . 18
第三章 Fabrication Technology 21
3.1 Cleaning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.2 Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.2.1 Dehydration Bake . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.2.2 PR Spin Coat . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.2.3 Soft Bake . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.2.4 Exposure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.2.5 Post-exposure Bake . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.2.6 Develop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.2.7 Hard Bake . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3 Spin Coater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.4 MA6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.5 PECVD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.6 Electron beam evaporation (E-Gun) . . . . . . . . . . . . . . . . . . 27
3.7 Lift off Process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.8 Rapid Thermal Annealing . . . . . . . . . . . . . . . . . . . . . . . 29
3.9 Etching Process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.9.1 Reactive Ion Etching (RIE) . . . . . . . . . . . . . . . . . . . . . . 31
3.9.2 ICP-RIE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.9.3 DRIE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.9.4 WET ETCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.10 Flip-chip bonding . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.10.1 Surface Profiler (α-step) . . . . . . . . . . . . . . . . . . . . . . . . 35
3.10.2 Ellipsometer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.10.3 Laser Confocal Microscopy (LCM) . . . . . . . . . . . . . . . . . . 38
3.10.4 Energy Dispersive Spectrometer (EDS) . . . . . . . . . . . . . . . 38
3.10.5 Scanning Electron Microscope (SEM) . . . . . . . . . . . . . . . . 40
第四章 Experimental Methods 43
4.1 Experimental Design . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
4.1.1 Fabrication of Through-Etched Silicon Substrate . . . . . . . . . . . 43
4.1.2 Silicon Substrate Diced for Bonding . . . . . . . . . . . . . . . . . 44
4.2 Process Flow of μ-LED . . . . . . . . . . . . . . . . . . . . . . . . . . 46
4.2.1 MESA Structure Definition and P-Type Electrode Fabrication . . . 46
4.2.2 N-Type Electrode, Annealing, and Passivation . . . . . . . . . . . . 47
4.2.3 Via Opening and Flip-Chip Bonding . . . . . . . . . . . . . . . . . 48
4.2.4 N-Type Electrode, Annealing, and Passivation . . . . . . . . . . . . 48
第五章 Results and Discussion 51
5.1 Challenges in Transparent Display Fabrication . . . . . . . . . . . . . . 51
5.1.1 Substrate Selection and Troubleshooting . . . . . . . . . . . . . . . 51
5.1.2 Exposure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
5.1.3 Metal Deposition . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
5.1.4 Etching Challenges . . . . . . . . . . . . . . . . . . . . . . . . . . 54
5.1.5 Flip-Chip Bonding Issues . . . . . . . . . . . . . . . . . . . . . . . 55
5.2 Size dependent property (20,40,60,80,100μm) . . . . . . . . . . . . . . 56
5.3 25μm array property . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
5.4 Size dependent property (10,20,30,40μm) . . . . . . . . . . . . . . . . 62
5.4.1 Current Density-Voltage (J-V) Characteristics . . . . . . . . . . . . 62
5.4.2 Size Effects in LED Spectral and Efficiency Characteristics Analysis 64
5.4.3 Analysis of Optical Spectra with Varying Current Density and Com-ponent Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
5.4.4 Current Density Dependence and Luminous Output Scaling . . . . . 67
5.4.5 Wavelength Stability and Blue Shift Analysis . . . . . . . . . . . . 68
5.4.6 Impact of Sidewall Defects on Intensity . . . . . . . . . . . . . . . 70
5.5 Pre-Bonding Electrical Characteristics . . . . . . . . . . . . . . . . . . 71
5.5.1 Fabrication and Electro-Optical Characteristics of Micro-LED Com-ponents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
5.5.2 Optical Preparation and Processing Strategy of the Transmissive Sil-icon Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
5.6 Post-Bonding Electrical Characteristics . . . . . . . . . . . . . . . . . 72
5.6.1 Initial Verification of Bonding . . . . . . . . . . . . . . . . . . . . 72
5.6.2 Challenges Encountered in Flip-Chip Integration . . . . . . . . . . 73
5.6.3 Re-optimization of Bonding Parameters and Final Verification . . . 74
5.6.4 Impact of Flip-Chip Bonding on Electrical Performance . . . . . . . 75
5.6.5 Analysis of High Series Resistance Factors . . . . . . . . . . . . . . 76
5.6.6 Strategies for Performance Optimization . . . . . . . . . . . . . . . 76
第六章 Conclusion 81
參考文獻 83
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dc.language.isoen-
dc.subject氮化鎵-
dc.subject透明顯示器-
dc.subject覆晶接合-
dc.subject微型發光二極體-
dc.subject近眼顯示器-
dc.subjectGallium Nitride-
dc.subjectTransparent Display-
dc.subjectFlip-chip bonding-
dc.subjectMicro-LEDs-
dc.subjectNear-Eye Display (NED)-
dc.title以覆晶微型 LED 封裝製程研製透明微顯示器zh_TW
dc.titleDeveloping a Transparent Micro Display by Flip-Chip Micro-LED Packagingen
dc.typeThesis-
dc.date.schoolyear114-1-
dc.description.degree碩士-
dc.contributor.oralexamcommittee蔡睿哲;張子璿zh_TW
dc.contributor.oralexamcommitteeJui-che Tsai;Tzu-Hsuan Changen
dc.subject.keyword氮化鎵,透明顯示器覆晶接合微型發光二極體近眼顯示器zh_TW
dc.subject.keywordGallium Nitride,Transparent DisplayFlip-chip bondingMicro-LEDsNear-Eye Display (NED)en
dc.relation.page85-
dc.identifier.doi10.6342/NTU202600430-
dc.rights.note未授權-
dc.date.accepted2026-02-02-
dc.contributor.author-college電機資訊學院-
dc.contributor.author-dept光電工程學研究所-
dc.date.embargo-liftN/A-
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