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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電子工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/101190
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dc.contributor.advisor黃俊郎zh_TW
dc.contributor.advisorJiun-Lang Huangen
dc.contributor.author謝承恩zh_TW
dc.contributor.authorCheng-En Hsiehen
dc.date.accessioned2025-12-31T16:15:51Z-
dc.date.available2026-01-01-
dc.date.copyright2025-12-31-
dc.date.issued2025-
dc.date.submitted2025-12-01-
dc.identifier.citation[1] D. Medhat, M. Dessouky and D. Khalil, "Electrostatic Discharge Physical Verification of 2.5D/3D Integrated Circuits," 2020 21st International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA, 2020, pp. 383-388
[2] D. H. Jung et al., "Modeling and analysis of defects in through silicon via channel for non-invasive fault isolation," 2015 International 3D Systems Integration Conference (3DIC), Sendai, Japan, 2015, pp. TS8.29.1-TS8.29.4
[3] S. S. Salvi and A. Jain, "A Review of Recent Research on Heat Transfer in Three Dimensional Integrated Circuits (3-D ICs)," in IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 11, no. 5, pp. 802-821, May 2021
[4] C. Hao and X. Yong, "A TSV Test Method for Resistive Open Fault and Leakage Fault Coexisting," in IEEE Access, vol. 9, pp. 19469-19478, 2021
[5] N. Georgoulopoulos and A. Hatzopoulos, "Effectiveness evaluation of the TSV fault detection method using ring oscillators," 2017 6th International Conference on Modern Circuits and Systems Technologies (MOCAST), Thessaloniki, Greece, 2017, pp. 1-4
[6] C. Jin, N. Wang, X. Xu and H. Sun, "Built-in-self-test 3-D ring oscillator for stacked 3DIC," 2014 IEEE International Symposium on Radio-Frequency Integration Technology, Hefei, China, 2014, pp. 1-3
[7] Y. Yu, Z. Yang and K. Xu, "A Post-Bond TSVs Test Solution for Leakage Fault," 2019 IEEE International Test Conference in Asia (ITC-Asia), Tokyo, Japan, 2019, pp. 127-132
[8] E. J. Marinissen, J. Verbree and M. Konijnenburg, "A structured and scalable test access architecture for TSV-based 3D stacked ICs," 2010 28th VLSI Test Symposium (VTS), Santa Cruz, CA, USA, 2010, pp. 269-274
[9] F. Ye and K. Chakrabarty, "TSV open defects in 3D integrated circuits: Characterization, test, and optimal spare allocation," DAC Design Automation Conference 2012, San Francisco, CA, USA, 2012, pp. 1024-1030
[10] S. -Y. Huang, J. -Y. Lee, K. -H. Tsai and W. -T. Cheng, "Pulse-Vanishing Test for Interposers Wires in 2.5-D IC," in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 33, no. 8, pp. 1258-1268, Aug. 2014
[11] H. Jun, S. Nam, H. Jin, J. -C. Lee, Y. J. Park and J. J. Lee, "High-Bandwidth Memory (HBM) Test Challenges and Solutions," in IEEE Design & Test, vol. 34, no. 1, pp. 16-25, Feb. 2017
[12] Y. Lee, D. Han, S. Lee and S. Kang, "Novel Error-Tolerant Voltage-Divider-Based Through-Silicon-Via Test Architecture," in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 42, no. 1, pp. 308-321, Jan. 2023
[13] J. Mok, H. Lim and S. Kang, "Enhanced Postbond Test Architecture for Bridge Defects Between the TSVs," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 29, no. 6, pp. 1164-1177, June 2021
[14] Y. -w. Lee, H. Lim and S. Kang, "Grouping-Based TSV Test Architecture for Resistive Open and Bridge Defects in 3-D-ICs," in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 36, no. 10, pp. 1759-1763, Oct. 2017
[15] H. Sung, K. Cho, K. Yoon and S. Kang, "A Delay Test Architecture for TSV With Resistive Open Defects in 3-D Stacked Memories," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 22, no. 11, pp. 2380-2387, Nov. 2014
[16] Y. -w. Lee, J. Kim, I. Choi and S. Kang, "A TSV test structure for simultaneously detecting resistive open and bridge defects in 3D-ICs," 2016 International SoC Design Conference (ISOCC), Jeju, Korea (South), 2016, pp. 129-130
[17] K. Kim and M. -j. Park, "Present and Future, Challenges of High Bandwith Memory (HBM)," 2024 IEEE International Memory Workshop (IMW), Seoul, Korea, Republic of, 2024
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/101190-
dc.description.abstract隨著三維積體電路(3D-IC)與高頻寬記憶體(HBM)系統日益複雜,針對矽穿孔(TSV)之製程缺陷的測試已成為不可或缺的一環。因此,對這些缺陷進行可靠的偵測與診斷,對於確保系統良率與效能至關重要。本研究基於環形振盪器之 DFT 架構,設計了兩種應用於晶片間TSV測試的測試流程。其一為定位流程,用於辨識故障TSV以支援後續修復;其二為診斷流程,進一步區分不同的故障類型。為支援上述流程,我們定義了對應的DFT操作模式,使測試電路能夠配置為不同模式。此外,本研究亦提出相應的定位演算法與診斷演算法,用於分析測試結果。整體方法能有效偵測、精確定位並區分多達兩個TSV缺陷,進一步提升3D-IC晶片間互連測試的可靠性。zh_TW
dc.description.abstractAs three-dimensional integrated circuits (3D-ICs) and high-bandwidth memory (HBM) systems continue to grow in complexity, testing for process defects induced faults in through-silicon vias (TSVs) has become critical. Reliable detection and diagnosis of these defects are therefore essential to ensure system yield and performance. In this work, we build upon a ring-oscillation-based DFT architecture and propose two test flows for inter-die TSV testing. The fault-locating flow identifies faulty TSVs to enable subsequent repair, while the diagnosis flow further distinguishes among different fault types. To support these flows, we define DFT operation modes that allow configuration of the test structure. In addition, we propose dedicated fault-locating and diagnosis algorithms to analyze the oscillation test results. The proposed methodology enables effective detection, precise fault-locating, and fault-type differentiation of up to two faulty TSVs, enhancing the reliability of inter-die interconnect testing in 3D-ICs.en
dc.description.provenanceSubmitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-12-31T16:15:51Z
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dc.description.provenanceMade available in DSpace on 2025-12-31T16:15:51Z (GMT). No. of bitstreams: 0en
dc.description.tableofcontents致謝 i
摘要 ii
Abstract iii
Contents iv
List of Figures vi
List of Tables ix
Chapter 1 Introduction 1
1.1 Overview of 2.5D and 3D-IC 1
1.2 Inter-Die Interconnect Testing 2
1.3 Related Works 3
1.3.1 RO-Based Test Approaches 3
1.3.2 Non-Oscillation Test Approaches 7
1.4 Motivation 10
1.5 Contribution 10
1.6 Organization of Thesis 11
Chapter 2 Preliminaries 12
2.1 TSV Interconnect and Multi-Die DRAM Stacking 12
2.2 Fault Models: Open, Short-to-Substrate, Bridge 13
2.3 Oscillation-Based DFT Architecture for 2D TSV Arrays 14
Chapter 3 Proposed Methodology 18
3.1 DFT Operation Modes 18
3.1.1 Horizontal Modes (All / Odd / Even) 19
3.1.2 Vertical Modes (All / Odd / Even) 24
3.1.3 Diagonal Modes (All / Odd / Even) 26
3.2 Grouping of TSVs 29
3.3 Proposed Test Flow 34
3.4 Fault-locating & Diagnosis Algorithm 37
Chapter 4 Experimental Results 43
4.1 Experiment: Ring Oscillator Sensitivity 43
4.1.1 Experimental Setup 43
4.1.2 Sensitivity Analysis 44
Chapter 5 Conclusion and Future Work 48
5.1 Conclusion 48
5.2 Future Work 49
References 51
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dc.language.isoen-
dc.subject三維積體電路-
dc.subject互連測試-
dc.subject環形震盪器-
dc.subject開路-
dc.subject接地短路-
dc.subject橋接故障-
dc.subject3D-IC-
dc.subjectInterconnect Testing-
dc.subjectRing Oscillator-
dc.subjectOpen-
dc.subjectShort to Substrate-
dc.subjectBridge Fault-
dc.title基於振盪測試結構的晶片間互連缺陷之偵測與診斷zh_TW
dc.titleDetection and Diagnosis of Inter-Die Interconnect Defects on an Oscillation-Based Test Structureen
dc.typeThesis-
dc.date.schoolyear114-1-
dc.description.degree碩士-
dc.contributor.oralexamcommittee李進福;彭中靖;張益興zh_TW
dc.contributor.oralexamcommitteeJin-Fu Li;Chung-Ching Peng;Yi-Shing Changen
dc.subject.keyword三維積體電路,互連測試環形震盪器開路接地短路橋接故障zh_TW
dc.subject.keyword3D-IC,Interconnect TestingRing OscillatorOpenShort to SubstrateBridge Faulten
dc.relation.page53-
dc.identifier.doi10.6342/NTU202504740-
dc.rights.note未授權-
dc.date.accepted2025-12-01-
dc.contributor.author-college電機資訊學院-
dc.contributor.author-dept電子工程學研究所-
dc.date.embargo-liftN/A-
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