請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/10111完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李嗣涔(Si-Chen Lee) | |
| dc.contributor.author | Che-Yu Chang | en |
| dc.contributor.author | 張哲宇 | zh_TW |
| dc.date.accessioned | 2021-05-20T21:02:45Z | - |
| dc.date.available | 2016-08-23 | |
| dc.date.available | 2021-05-20T21:02:45Z | - |
| dc.date.copyright | 2011-08-23 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-08-21 | |
| dc.identifier.citation | [1] S. Raghavan, P. Rotella, A. Stintz, B. Fuchs, S. Krishna, C. Morath, D. A. Cardimona, and S. W. Kennerly, Appl. Phys. Lett. 81,1369 (2002).
[2] H. Kaplan, Photonics Spectra, June, p.104 (1999) [3] K. K. Choi, The Physics of Quantum Well Infrared Photodetectors, World Scientific, River Edge, New Jersey, 1997. [4] A. G. U. Perera, W. Z. Shen, S. G. Matsik, H. C. Liu, M. Buchanan, and W. J. Schaff , Appl. Phys. Lett. 72, 1596 (1998) [5] Amlan Majumdar, K. K. Choi, J. L. Reno, and D. C. Tsui, Appl. Phys. Lett. 83, 5130 (2003) [6] M. Z. Tidrow, Xudong Jiang, Sheng S. Li, and K. Bacher, Appl. Phys. Lett. 74, 1335 (1999) [7] M. Z. Tidrow, J. C. Chiang, S. S. Li, and K. Bacher, Appl. Phys. Lett. 70, 859 (1997) [8] Amlan Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, Appl. Phys. Lett. 82, 686 (2003) [9] Adrienne D. Stiff-Roberts, Journal of Nanophotonics, 3, 031607 (2009) [10] S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, Appl. Phys. Lett. 78, 8 (2001) [11] S. F. Tang, S. Y. Lin, and S. C. Lee, Appl. Phys. Lett. 78, 17 (2001) [12] P.Y. Lai, and S. C. Lee, “Passivation of Quantum Dot Infrared Photodetector with Al2O3 Deposited by Atomic Layer Deposition”, Graduate Institute of Electronics Engineering College of Electrical Engineering & Computer Science, National Taiwan University, Master Thesis [13] H. H. Lin, and S. C. Lee, Appl. Phys. Lett. 47 (8) (1985) [14] Y. H. Wu, J. S. Su, W. C. Hsu, W. Lin, W. C. Liu, M. J. Kao, and R. T. Hsu, Jpn. J. Appl. Phys. Vol. 34 (1995) pp. 5908-5911 [15] S. Fu, T. P. Chen, R. C. Liu, S. Y. Cheng, P. H. Lai, Y. Y. Tsai, C. W. Hung, and W. C. Liu, Journal of The Electrochemical Society, 154 (4) H289-H292 (2007) [16] Igor S. Altman , Physics Letters A 256(1999).122–124 [17] Y. H. Wang, Jung-chi Chiang, and Sheng S. Li, J. Appl. Phys. 76 (4), 15 August (1994) [18] Kim, MD; Noh, SK; Hong, SC, Appl. Phys. Lett. 82,553-555(2003) [19]M.O. Manasreh, Semiconductor quantum wells and superlattices for long-wavelength infrared detectors, Boston : Artech House, c1993 [20] Amlan Majumdar, K. K. Choi, J. L. Reno ,Appl. Phys. Lett. 86, 261110 (2005) [21] G. Ariyawansa, A. G. U. Perera, G. Huang, and P. Bhattacharya, Appl. Phys. Lett. 94, 131109 (2009) [22] Y. H. Wang, Sheng S. Li, and Pin Ho, Appl. Phys. Lett. 62, 93 (1993); [23] P. Bhattacharya,a! X. H. Su, and S. Chakrabarti, Appl. Phys. Lett.86, 191106 (2005) [24] J. Phillips, K. Kamath, and P. Bhattacharya, Appl. Phys. Lett. 72, 2020 (1998). [25] S. Maimon, E. Finkman, and G. Bahir, Appl. Phys. Lett. 73, 2003 (1998). [26] D. Pan, E. Towe, and S. Kennerly, Appl. Phys. Lett. 73, 1937 (1998). [27] J. M. Garcia, J. P. Silveira, and F. Briones, Appl. Phys. Lett. 77, 409 (2000). [28] F. Guffarth, R. Heitz, A. Schliwa, O. Stier, N. N. Ledentsov, A. R. Kovsh, V. M. Ustinov, and D. Bimberg, Phys. Rev. B, 64, 085305 (2001) [29] P. B. Joyce, E. C. Le Ru, T. J. Krzyzewki, G. R. Bell, R. Murray, and T. S. Jones, Phys. Rev. B, 66, 075316 (2002) [30] K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Bohm, G. Trankle, and G. Weimann, J. Phys. (Paris) Colloq. C5-3, 107 (1993). [31] T. Fukui, S. Ando, Y. Kokura, and T. Toriyama, Appl. Phys. Lett. 58, 2018 (1991). [32] Y. Nagamune, S. Tsukamoto, M. Nishioka, and Y. Arakawa, Appl. Phys. Lett. 64, 2495 (1994). [33] M. Grundmann, J. Christen, N. N. Ledentsov, J. Bohrer, D.Bimberg, S.S.Ruvimov, P. Werner, U. Richter, U. Gosele, J. Heydenreich, V. M. Ustinov, A. Yu.Egorov, P. S. Kop’ev, and Zh. I. Alferov, Phys. Rev. Lett. 74, 4043 (1995). [34] P.M. Petroff and S.P.DenBaars , Superlattices and Microstructures. 15,1(1994) [35] D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (J. Wiley & Sons, Chichester, 1999) [36] Gallium Arsenide Materials, Devices, and Circuits, edited by M. J. Howes and D.V. Morgan (1985). [37] Handbook of Instrumental Techniques for Analytical Chemistry, Ch.15, edited by C. P. Sherman Hsu. [38] L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. Le Roux, Appl. Phys. Lett. 47, 1099 (1985). [39] S. Z. Chang, T. C. Chang, and S. C. Lee, Appl. Surf. Sci. 92, 70 (1996). [40] Shiang-Feng Tang, Shih-Yen Lin, and Si-Chen Lee, Appl. Phys. Lett. 78, 2428 (2001). [41] Shih-Yen Lin, Yau-Ren Tsai, and Si-Chen Lee, Appl. Phys. Lett. 78, 2784 (2001). [42] J. D. Phillips, J. Appl. Phys. 91, 4590 (2002). [43] F. Y. Chang, C. C. Wu, and H. H. Lin, Appl. Phys. Lett. 82, 4477 (2003). [44] H. Petterson, L. Baath, N. Carlsson, W. Seifert, and L. Samuelson, Appl. Phys. Lett. 79, 78 (2001). [45] Shih-Yen Lin, Yau-Ren Tsai, and Si-Chen Lee, Appl. Phys. Lett. 83, 752 (2003). [46] Z. Ye, J. C. Campbell, Z. Chen, E. T. Kim, and A. Madhukar, J. Appl. Phys. 92, 7462 (2002). [47] S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S. B. Rafol, and S. W. Kennerly, IEEE Photonics Technol. Lett. 16, 1361 (2004). [48] M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu and M. Hong, “Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3.”, Appl. Phys. Letts. 87 252104 (2005). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/10111 | - |
| dc.description.abstract | 本文的研究目標是提升量子點紅外光偵測器的操作溫度。主要嘗試利用邊緣減薄結構；結合表面原子層沉積氧化鋁層的邊緣減薄結構，減低元件表面漏電流，提高操作溫度。
本文在第一個實驗中，研究了在上電極層、量子點層，兩個不同位置的邊緣減薄結構對元件性能的影響。所採用的邊緣減薄結構厚度約為100~200 nm，寬度約為10 μm。實驗結果發現，邊緣減薄結構並無法有效降低量子點紅外光偵測器的暗電流並提升操作溫度。 本文在第二個實驗中，結合了邊緣減薄結構與表面原子層沉積的氧化鋁層，嘗試提升元件的操作溫度。所沉積的氧化鋁約為10 nm厚。實驗結果發現，結合邊緣減薄結構與表面原子層沉積氧化鋁層仍無法顯著提升量子點紅外光偵測器的操作溫度。但位於量子點層的邊緣減薄結構與表面原子層沉積氧化鋁層結合後，能夠抑制元件的電流，使元件能在更高的電壓下工作。 在本文的實驗中，無法藉由邊緣減薄結構，以及與表面原子層沉積氧化鋁層結合的邊緣減薄結構顯著提升量子點紅外光偵測器的操作溫度。相關研究仍有待進一步的探討。 | zh_TW |
| dc.description.abstract | In this thesis, the edge thinning structure with width of 10 μm and thickness of 100~200 nm and the edge thinning structure combined with surface passivation layer Al2O3 with thickness of 10 nm are adopted on n-i-n InAs/GaAs QDIPs to enhance the operation temperature of n-i-n InAs/GaAs quantum dot infrared photodetectors.
In the first experiment, edge thinning structure with different depths on QDIPs is investigated. It is found that edge thinning structure at top contact layer and quantum dot layer both can’t significantly reduce the dark current and enhance the operation temperature of QDIPs in this experiment. In the second experiment, the combination of edge thinning structure and surface passivation layer Al2O3 is investigated. It is found that the combination of edge thinning structure and surface passivation layer Al2O3 can’t significantly reduce the dark current and enhance the operation temperature of QDIPs in this experiment. However, the combination of edge thinning structure at quantum dot layer and surface passivation layer Al2O3 can reduce the current by 2 orders of magnitude so the device can work at higher bias voltage. In summary, the edge thinning structure and that combined with surface passivation layer Al2O3 haven’t enhanced the operation temperature of QDIPs. It may require more advanced investigation. | en |
| dc.description.provenance | Made available in DSpace on 2021-05-20T21:02:45Z (GMT). No. of bitstreams: 1 ntu-100-R98943076-1.pdf: 1861231 bytes, checksum: 4f5b65e203befd89737b206c1a4f3c1c (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 誌謝 I
摘要 II Abstract III Chapter 1 Introduction 1 1.1 Introduction to Quantum Dot Infrared Photodetetors 1 1.2 Methods to Improve Operation Temperature 2 1.2.1 AlGaAs Blocking Layer 2 1.2.2 Surface Passivation 3 1.3 Edge Thinning Structure 3 1.4 Motivation and Outline 5 Chapter 2 The Fundamentals of Infrared Detectors and Experiments 6 2.1 Theory 6 2.1.1 Thermal Radiation 6 2.1.2 Infrared Detectors 7 2.1.3 Quantum Dot Infrared Photodetectors 10 2.2 Process Flow 13 2.2.1 Fabrication Processes 13 2.2.2 H3PO4-H2O2-H2O Etching Solution 18 2.2.3 Lift-off Process 21 2.3 Measurement Systems 21 2.3.1 Current-Voltage Measurement 22 2.3.2 Introduction of FTIR 22 2.3.3 Relative Spectral Response 26 2.3.4 Absolute Responsivity 28 2.3.5 Specific Detectivity 31 2.4 Edge Thinning Introduction 32 2.5 Atomic Layer Deposition Mechanism and the transmission of Al2O3 in the infrared spectrum 34 Chapter 3 Edge Thinning Structure with Different Depths on QDIPs 38 3.1 The Effect of Edge Thinning Structure with Different Depths on IV Characteristics of QDIPs 39 3.1.1 Sample Preparation 39 3.1.2 Results and Discussion 41 3.2 The Effect of Edge Thinning Structure with Different Depths on photo-response of QDIPs 46 3.2.1 Sample Preparation 46 3.2.2 Results and Discussion 46 Chapter 4 The Combination of Edge Thinning Structure and Surface Passivation Layer on the Performance of QDIPs 50 4.1 Sample Preparation 51 4.2 Results and Discussion 54 Chapter 5 Conclusions 69 Bibliography 70 | |
| dc.language.iso | en | |
| dc.title | 利用邊緣減薄結構提升量子點紅外光偵測器操作溫度之研究 | zh_TW |
| dc.title | Enhancement of Operation Temperature of Quantum Dot Infrared Photodetectors by Edge Thinning Structure | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 孫台平(Tai-Ping Sun),管傑雄(Chieh-Hsiung Kuan),林浩雄(Hao-Hsiung Lin) | |
| dc.subject.keyword | 量子點紅外光偵測器,邊緣減薄,操作溫度, | zh_TW |
| dc.subject.keyword | QDIPs,Edge Thinning,Operation Temperature, | en |
| dc.relation.page | 74 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2011-08-21 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-100-1.pdf | 1.82 MB | Adobe PDF | 檢視/開啟 |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。